2SD1691L

UNISONIC TECHNOLOGIES CO., LTD
2SD1691
NPN SILICON TRANSISTOR
LOW COLLECTOR
SATURATION VOLTAGE
LARGE CURRENT

1
1
TO-220F1
TO-220
FEATURES
*High Power Dissipation
*Complementary to 2SB1151
1
1
TO-252
TO-251
1
1
TO-126

ORDERING INFORMATION
Ordering Number
Lead Free Plating
Halogen Free
2SD1691L-x-TA3-T
2SD1691G-x-TA3-T
2SD1691L-x-TF1-T
2SD1691G-x-TF1-T
2SD1691L-x-TM3-T
2SD1691G-x-TM3-T
2SD1691L-x-TN3-T
2SD1691G-x-TN3-T
2SD1691L-x-T60-K
2SD1691G-x-T60-K
2SD1691L-x-T6C-K
2SD1691G-x-T6C-K
Note: Pin Assignment: B: Base C: Collector E: Emitter

TO-126C
Package
TO-220
TO-220F1
TO-251
TO-252
TO-126
TO-126C
Pin Assignment
1
2
3
B
C
E
B
C
E
B
C
E
B
C
E
E
C
B
E
C
B
Packing
Tube
Tube
Tube
Tape Reel
Bulk
Bulk
MARKING
TO-220 / TO-220F1 / TO-251 / TO-252
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
TO-126 / TO-126C
1 of 4
QW-R204-015.E
2SD1691

NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATING
UNIT
Collector-Base Voltage
VCBO
60
V
Collector-Emitter Voltage
VCEO
60
V
Emitter-Base Voltage
VEBO
7
V
5
DC
IC
A
Collector Current
Pulse (PW≦10ms,Duty Cycle≦50%)
ICP
8
Base Current
IB
1
A
TO-220F1
23
TO-220
54
Collector Power Dissipation (Tc=25°C)
PC
W
TO-251/TO-252
36
TO-126/ TO-126C
20
Junction Temperature
TJ
150
°C
Storage Temperature Range
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Turn On Time
Switching Time
Storage Time
SYMBOL
ICBO
IEBO
hFE1
hFE2
hFE3
VCE(SAT) (Note)
VBE(SAT) (Note)
TEST CONDITIONS
VCB=50V,IE=0
VEB=7V, IC=0
VCE=1V, IC =0.1A
VCE=1V, IC =2A
VCE=2V, IC =5A
IC=2A, IB=0.2A
IC=2A, IB=0.2A
20μsec
TON
IB1
5Ω
IB1
TSTG
IB2
Fall Time
OUTPUT
INPUT
TF
IB1=-IB2=0.2A
DUTY CYCLE≦1%
Ω
IB2
Vcc=10V
MIN
TYP
60
160
50
MAX
10
10
UNIT
μA
μA
400
0.1
0.9
0.3
1.2
0.2
1
1.1
2.5
0.2
1
V
V
μs
Note: Pulse test: PW≦50μS, Duty Cycle≦2% Pulse

CLASSIFICATION OF hFE2
RANK
RANGE
O
160-320
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Y
200-400
2 of 4
QW-R204-015.E
2SD1691

NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 4
QW-R204-015.E
2SD1691
NPN SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 4
QW-R204-015.E