UTC-IC 2SD1664L-X-AB3-R

UNISONIC TECHNOLOGIES CO., LTD
2SD1664
NPN SILICON TRANSISTOR
MEDIUM POWER
NPN TRANSISTOR
„
DESCRIPTION
The UTC 2SD1664 is an epitaxial planar type NPN silicon
transistor.
„
FEATURES
1
*Low VCE(SAT): VCE (SAT)= 0.15V(Typ.)
(IC/IB= 500mA/50mA)
* Complement the 2SB1132.
SOT-89
Lead-free:
2SD1664L
Halogen-free:2SD1664G
„
ORDERING INFORMATION
Normal
2SD1664-x-AB3-R
Ordering Number
Lead Free Plating
2SD1664L-x-AB3-R
Halogen Free
2SD1664G-x-AB3-R
www.unisonic.com.tw
Copyright © 2009 Unisonic Technologies Co., Ltd
Package
SOT-89
Pin Assignment
1
2
3
B
C
E
Packing
Tape Reel
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QW-R208-025.C
2SD1664
„
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C )
PARAMETER
SYMBOL
RATING
UNIT
Collector-Base Voltage
VCBO
40
V
Collector-Emitter Voltage
VCEO
32
V
Emitter-Base Voltage
VEBO
5
V
Collector Current
DC
1
A
IC
Collector Current (Duty=1/2, PW=20ms)
Pulse
2
A
Collector Power Dissipation
PC
0.5
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector Base Breakdown Voltage
BVCBO IC= 50μA
Collector Emitter Breakdown Voltage
BVCEO IC= 1mA
Emitter Base Breakdown Voltage
BVEBO IE=50μA
Collector Cut-Off Current
ICBO
VCB=20V
Emitter Cut-Off Current
IEBO
VEB= 4V
DC Current Gain
hFE
VCE= 3V, Ic= 100mA
Collector-Emitter Saturation Voltage
VCE(SAT) IC/IB=500mA /50mA
Transition Frequency
fT
VCE=5V, IE=-50mA, f=100MHz
Output Capacitance
Cob
VCB= 10V, IE= 0A, f=1MHz
„
MIN
40
32
5
TYP
82
0.15
150
15
MAX
0.5
0.5
390
0.4
UNIT
V
V
V
μA
μA
V
MHz
pF
CLASSIFICATION OF hFE
RANK
RANGE
P
82-180
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Q
120-270
R
180-390
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2SD1664
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
„
500
Grounded Emitter Propagation Characteristics
500
20
Ta=25°C
Ta= 55°C
10
5
2000
1.0mA
200
0.5mA
100
0.2 0.4 0.6 0.8 1.0 1.2
Base-Emitter Voltage, VBE(V)
1.4 1.6
DC Current Gain vs.Collector Current (I)
2.0
DC Current Gain vs.Collector Current (II)
VcE= 3V
DC Current Gain, hFE
DC Current Gain, hFE
0.4
0.8
1.2
1.6
Collector-Emitter Voltage, VCE(V)
1000
500
200
VcE= 3V
100
500
200
Ta=100°C
Ta=25°C
100
VcE= 1V
50
Ta= -55°C
50
1
5 10 20
50 100 200 500 1000
Collector Current, IC(mA)
2
1
Collector-Emitter Saturation Voltage vs.
Collector Current (I)
Ta=25°C
0.2
0.1
IC/IB=50
0.05
IC/IB=20
IC/IB=10
0.02
2
5
10 20
50 100 200
Collector Current, IC(mA)
500 1000
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2
5 10 20
50 100 200 500 1000
Collector Current, IC(mA)
Collector-Emitter Saturation Voltage vs.
Collector Current (II)
Collector Saturation Voltage:VCE(SAT) ( V)
Collector Saturation Voltage, VCE(SAT) ( V)
IB =0mA
2000
1000
0.01
1
Ta=25°C
0
0
Ta=25°C
0.5
1.5mA
300
2
1
0
2.0mA
3.0mA
3.5mA
4.0mA
400
Collector Current, IC(mA)
Collector Current, IC(mA)
Ta=100°C
100
50
2.5mA
4.5
mA
VCE =6V
200
Grounded Emitter Output Characteristics
IC/ IB=10
0.5
0.2
0.1
Ta=100°C
0.05
Ta=-40°C
Ta=25°C
0.02
0.01
1
2
5
10 20
50 100 200
Collector Current, IC(mA)
500 1000
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NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS(Cont.)
„
Collector Output Capacitance vs.CollectorBase Voltage
Gain Bandwidth Product vs. Emitter Current
100
Ta=25°C
Collector Output Capacitance, COB (pF)
Transition Frequency, fT(MHz)
VCE =5V
200
100
50
20
-1
Ta=25°C
f=1MHz
IB=0A
50
20
10
5
-2
-5
-10
-20
-50
-100
0.5
1000
2
=
PW
10
*
ms
PW
s*
DC
0.2
m
00
=1
Collector Current, Ic (A)
1
0.5
0.1
0.05
Ta=25°C
0.02 *Single pulse
0.01
0.1 0.2
0.5
1
2
5
2
5
10
20
Transient Thermal Resistance
Safe Operation Area
Transient Thermal Resistance, RTH (°C/W)
5
1
Collector to Base Voltage, VCB(V)
Emitter Current, IE (mA)
10
20
50
Collector-Emitter Voltage, VCE(V)
Ta=25°C
100
10
1
0.1
0.001
0.01
0.1
1
10
100
1000
Time, t(s)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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