UNISONIC TECHNOLOGIES CO., LTD 4N40 Preliminary Power MOSFET 4A, 400V N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 4N40 is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 4N40 is universally applied in electronic lamp ballast based on half bridge topology and high efficient switched mode power supply. TO-220 1 TO-220F FEATURES * High switching speed * RDS(ON)=1.5Ω @ VGS=10V * 100% avalanche tested SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Note: Ordering Number Lead Free Halogen Free 4N40L-TA3-T 4N40G-TA3-T 4N40L-TF3-T 4N40G-TF3-T Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd Package TO-220 TO-220F 1 G G Pin Assignment 2 3 D S D S Packing Tube Tube 1 of 3 QW-R502-550.b 4N40 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 400 V Gate-Source Voltage VGSS ±30 V Continuous (TC=25°C) ID 4 A Drain Current 8 A Pulsed (Note 1) IDM Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 V/ns TO-220 60 W Power Dissipation TO-220F 27 W PD TO-220 0.48 W/°C Derate above 25°C TO-220F 0.22 W/°C Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL θJA TO-220 TO-220F θJC RATINGS 62.5 2.08 4.5 UNIT °C/W °C/W ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=0V 400 Drain-Source Leakage Current IDSS VDS=400V, VGS=0V Forward VGS=+30V, VDS=0V Gate- Source Leakage Current IGSS Reverse VGS=-30V, VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA 2.0 Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=4A 1.2 DYNAMIC PARAMETERS Input Capacitance CISS Output Capacitance COSS VGS=0V, VDS=25V, f=1.0MHz Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Turn-ON Delay Time tD(ON) 12 VDD=200V, ID=4A, RG=25Ω Rise Time tR 42 Turn-OFF Delay Time tD(OFF) (Note 2, 3) 130 Fall-Time tF 62 SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD IS=2A, VGS=0V Body Diode Reverse Recovery Time trr IS=4A, VGS=0V, dIF/dt=100A/µs(Note 2) 800 Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2% 3. Essentially independent of operating temperature UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MAX UNIT V 1 µA +100 nA -100 nA 4.0 1.5 V Ω 750 150 100 pF pF pF 45 60 200 100 ns ns ns ns 1.4 V ns 2 of 3 QW-R502-550.b 4N40 Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R502-550.b