WG1N60 N-CHANNEL 600V - 8Ω - 1A DPAK / IPAK / TO-92 Power MOSFET ■ ■ ■ ■ ■ TYPICAL RDS(on) = 8 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED NEW HIGH VOLTAGE BENCHMARK 3 3 2 1 1 IPAK APPLICATIONS SWITCH MODE LOW POWER SUPPLIES (SMPS) ■ LOW POWER, LOW COST CFL (COMPACT FLUORESCENT LAMPS) ■ LOW POWER BATTERY CHARGERS ■ TO-92 (Ammopack) DPAK TO-92 INTERNAL SCHEMATIC DIAGRAM TYPE WG1N60B WG1N60D WG1N60R VDSS RDS(on) ID Pw 600 V 600 V 600 V < 8.5 Ω < 8.5 Ω < 8.5 Ω 1A 1A 0.4 A 30 W 30 W 3W ORDERING INFORMATION SALES TYPE MARKING PACKAGE PACKAGING WG1N60B 1N60 DPAK TAPE WG1N60D 1N60 IPAK TUBE WG1N60R 1N60 TO-92 BULK 1/7 WG1N60B - WG1N60D - WG1N60R ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value WG1N60B WG1N60D VDS VDGR VGS Unit WG1N60R Drain-source Voltage (VGS = 0) 600 V Drain-gate Voltage (RGS = 20 kΩ) 600 V Gate- source Voltage ± 30 V ID Drain Current (continuous) at TC = 25°C 1.0 0.4 A ID Drain Current (continuous) at TC = 100°C IDM () PTOT 0.63 0.45 A Drain Current (pulsed) 4 2.5 A Total Dissipation at TC = 25°C 30 8 W 0.025 W/°C Derating Factor dv/dt (1) Tj Tstg 0.24 Peak Diode Recovery voltage slope Operating Junction Temperature Storage Temperature 3 V/ns -55 to 150 °C ( ) Pulse width limited by safe operating area (1) ISD ≤1.0A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. THERMAL DATA DPAK / IPAK TO-92 Rthj-case Thermal Resistance Junction-case Max 4.16 Rthj-amb Thermal Resistance Junction-ambient Max 100 120 °C/W 40 °C/W 275 260 °C Rthj-lead Tl °C/W Thermal Resistance Junction-lead Max Maximum Lead Temperature For Soldering Purpose AVALANCHE CHARACTERISTICS Symbol Parameter Max Value DPAK / IPAK Unit TO-92 IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) 1 A EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 25 mJ 2/7 WG1N60B - WG1N60D - WG1N60R ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) ON/OFF Symbol Parameter Test Conditions Drain-source Breakdown Voltage ID = 1 mA, VGS = 0 IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating, TC = 125 °C IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 30V VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA RDS(on) Static Drain-source On Resistance VGS = 10V, ID = 0.5 A V(BR)DSS Min. Typ. Max. 600 2.25 Unit V 1 50 µA µA ±100 nA 3 3.7 V 8 8.5 Ω Typ. Max. Unit DYNAMIC Symbol gfs (1) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions Min. VDS > ID(on) x RDS(on)max, ID = 0.5 A VDS = 25V, f = 1 MHz, VGS = 0 1 S 156 23.5 3.8 pF pF pF SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time VDD = 300 V, ID = 0.5 A RG = 4.7Ω VGS = 10 V (Resistive Load see, Figure 3) 6.5 5 Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 480V, ID = 1.0 A, VGS = 10V, RG = 4.7Ω 7 1.1 3.4 10 nC nC nC Typ. Max. Unit ns ns SWITCHING OFF Symbol Parameter Test Conditions Min. td(off) tf Turn-off Delay Time Fall Time VDD = 300 V, ID = 0.5 A RG = 4.7Ω VGS = 10 V (Resistive Load see, Figure 3) 19 25 ns ns tr(Voff) tf tc Off-voltage Rise Time Fall Time Cross-over Time VDD = 480V, ID = 1.0 A, RG = 4.7Ω, VGS = 10V (Inductive Load see, Figure 5) 24 25 44 ns ns ns SOURCE DRAIN DIODE Symbol Parameter Test Conditions ISD ISDM (2) Source-drain Current Source-drain Current (pulsed) VSD (1) Forward On Voltage ISD = 1.0 A, VGS = 0 Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 1.0 A, di/dt = 100A/µs VDD = 25V, Tj = 150°C (see test circuit, Figure 5) trr Qrr IRRM Min. Typ. 229 377 3.3 Max. Unit 1 4 A A 1.6 V ns µC A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3/7 WG1N60B - WG1N60D - WG1N60R Safe Operating Area For DPAK/IPAK Thermal Impedance For DPAK/IPAK Safe Operating Area For TO-92 Thermal Impedance For TO-92 Output Characteristics Transfer Characteristics 4/7 WG1N60B - WG1N60D - WG1N60R Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations Normalized Gate Threshold Voltage vs Temp. Normalized On Resistance vs Temperature 5/7 WG1N60B - WG1N60D - WG1N60R Source-drain Diode Forward Characteristics Normalized BVDSS vs Temperature Max Id Current vs Tc Maximum Avalanche Energy vs Temperature 6/7 WG1N60B - WG1N60D - WG1N60R Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 7/7