STD2NB25 ® N - CHANNEL 250V - 1.7Ω - 2A - IPAK/DPAK PowerMESH MOSFET TYPE V DSS R DS(on) ID STD2NB25 250 V <2Ω 2A ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 1.7 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED FOR SMD DPAK VERSION CONTACT SALES OFFICE 3 3 2 1 DESCRIPTION Using the latest high voltage MESH OVERLAY process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. 1 IPAK TO-251 (Suffix "-1") DPAK TO-252 (Suffix "T4") INTERNAL SCHEMATIC DIAGRAM APPLICATIONS SWITCH MODE POWER SUPPLIES (SMPS) ■ DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ■ ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR V GS Parameter Drain-source Voltage (V GS = 0) 250 V V 2 A 1.25 A ID Drain Current (continuous) at T c = 100 C Drain Current (pulsed) Total Dissipation at T c = 25 o C Derating Factor Tstg Tj V ± 20 o dv/dt( 1 ) 250 Gate-source Voltage Drain Current (continuous) at T c = 25 o C P tot Unit Drain- gate Voltage (R GS = 20 kΩ) ID I DM (•) Value Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature (•) Pulse width limited by safe operating area October 1998 8 A 40 W 0.32 W/ o C 6 V/ns -65 to 150 o C 150 o C ( 1) ISD ≤2A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX 1/9 STD2NB25 THERMAL DATA R thj-case Rthj-amb R thc-sink Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose o 3.12 100 1.5 275 C/W oC/W o C/W o C Max Value Unit 2 A 50 mJ AVALANCHE CHARACTERISTICS Symbol Parameter IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max) E AS Single Pulse Avalanche Energy (starting T j = 25 o C, I D = I AR , V DD = 50 V) ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbol V (BR)DSS Parameter Drain-source Breakdown Voltage Test Conditions I D = 250 µA V GS = 0 I DSS Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating IGSS Gate-body Leakage Current (V DS = 0) Min. Typ. Max. 250 Unit V T c = 125 o C V GS = ± 20 V 1 10 µA µA ± 100 nA Max. Unit ON (∗) Symbol Parameter Test Conditions V GS(th) Gate Threshold Voltage V DS = V GS I D = 250 µA R DS(on) Static Drain-source On Resistance I D =1 A I D(on) V GS = 10V Min. 2 On State Drain Current V DS > I D(on) x R DS(on)max V GS = 10 V Typ. 3 4 V 1.7 2 Ω 2 A DYNAMIC Symbol g fs (∗) C iss C oss C rss 2/9 Parameter Test Conditions Forward Transconductance V DS > I D(on) x R DS(on)max Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS = 25 V f = 1 MHz ID = 1 A V GS = 0 Min. Typ. 0.5 1.6 185 45 5 Max. Unit S 250 60 7 pF pF pF STD2NB25 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test Conditions t d(on) tr Turn-on Time Rise Time V DD = 125 V ID = 1 A R G = 4.7 Ω V GS = 10 V (see test circuit, figure 3) Qg Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge V DD = 200 V Min. I D =2 A V GS = 10 V Typ. Max. Unit 5 7 7 10 ns ns 10.3 3.7 2.3 16 nC nC nC Typ. Max. Unit 11 13 18 15 18 24 ns ns ns Typ. Max. Unit 2 8 A A 1.5 V SWITCHING OFF Symbol tr(Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions Min. V DD = 200 V I D = 2 A R G = 4.7 Ω VGS = 10 V (see test circuit, figure 5) SOURCE DRAIN DIODE Symbol Parameter Test Conditions ISD I SDM (•) Source-drain Current Source-drain Current (pulsed) V SD (∗) Forward On Voltage I SD = 2 A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 2 A di/dt = 100 A/µs V DD = 50 V T j = 150 o C (see test circuit, figure 5) t rr Q rr I RRM Min. V GS = 0 120 ns 300 nC 5 A (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area Safe Operating Area Thermal Impedance 3/9 STD2NB25 Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/9 STD2NB25 Normalized Gate Threshold Voltage vs Temperature Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics 5/9 STD2NB25 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/9 STD2NB25 TO-251 (IPAK) MECHANICAL DATA mm DIM. MIN. inch MAX. MIN. A 2.2 TYP. 2.4 0.086 0.094 A1 0.9 1.1 0.035 0.043 A3 0.7 1.3 0.027 0.051 B 0.64 0.9 0.025 0.031 B2 5.2 5.4 0.204 0.212 B3 TYP. MAX. 0.85 B5 0.033 0.3 0.012 B6 0.95 0.037 C 0.45 0.6 0.017 0.023 C2 0.48 0.6 0.019 0.023 D 6 6.2 0.236 0.244 E 6.4 6.6 0.252 0.260 G 4.4 4.6 0.173 0.181 H 15.9 16.3 0.626 0.641 L 9 9.4 0.354 0.370 L1 0.8 1.2 0.031 L2 0.8 0.047 1 0.031 0.039 A1 C2 A3 A C H B B6 = 1 = 2 G = = = E B2 = 3 B5 L D B3 L2 L1 0068771-E 7/9 STD2NB25 TO-252 (DPAK) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 2.2 2.4 0.086 0.094 A1 0.9 1.1 0.035 0.043 A2 0.03 0.23 0.001 0.009 B 0.64 0.9 0.025 0.035 B2 5.2 5.4 0.204 0.212 C 0.45 0.6 0.017 0.023 C2 0.48 0.6 0.019 0.023 D 6 6.2 0.236 0.244 E 6.4 6.6 0.252 0.260 G 4.4 4.6 0.173 0.181 H 9.35 10.1 0.368 0.397 L2 0.8 L4 0.031 0.6 1 0.023 0.039 A1 C2 A H A2 C DETAIL "A" L2 D = 1 = G 2 = = = E = B2 3 B DETAIL "A" L4 0068772-B 8/9 STD2NB25 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. 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