STD1NK60 - STD1NK60-1 STQ1HNK60R N-CHANNEL 600V - 8Ω - 1A DPAK / IPAK / TO-92 SuperMESH™Power MOSFET TYPE STD1NK60 STD1NK60-1 STQ1HNK60R ■ ■ ■ ■ ■ VDSS RDS(on) ID Pw 600 V 600 V 600 V < 8.5 Ω < 8.5 Ω < 8.5 Ω 1A 1A 0.4 A 30 W 30 W 3W TYPICAL RDS(on) = 8 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED NEW HIGH VOLTAGE BENCHMARK DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. 3 3 2 1 1 IPAK TO-92 (Ammopack) DPAK TO-92 INTERNAL SCHEMATIC DIAGRAM APPLICATIONS SWITCH MODE LOW POWER SUPPLIES (SMPS) ■ LOW POWER, LOW COST CFL (COMPACT FLUORESCENT LAMPS) ■ LOW POWER BATTERY CHARGERS ■ ORDERING INFORMATION SALES TYPE MARKING PACKAGE PACKAGING STD1NK60T4 D1NK60 DPAK TAPE & REEL STD1NK60-1 D1NK60 IPAK TUBE STQ1HNK60R 1HNK60R TO-92 BULK STQ1HNK60R-AP 1HNK60R TO-92 AMMOPAK June 2003 1/13 STD1NK60 - STD1NK60-1 - STQ1HNK60R ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value STD1NK60 STD1NK60-1 VDS VDGR VGS Unit STQ1HNK60R Drain-source Voltage (VGS = 0) 600 V Drain-gate Voltage (RGS = 20 kΩ) 600 V Gate- source Voltage ± 30 V ID Drain Current (continuous) at TC = 25°C 1.0 0.4 A ID Drain Current (continuous) at TC = 100°C IDM () PTOT 0.63 0.25 A Drain Current (pulsed) 4 1.6 A Total Dissipation at TC = 25°C 30 3 W 0.025 W/°C Derating Factor dv/dt (1) Tj Tstg 0.24 Peak Diode Recovery voltage slope Operating Junction Temperature Storage Temperature 3 V/ns -55 to 150 °C ( ) Pulse width limited by safe operating area (1) ISD ≤1.0A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. THERMAL DATA DPAK / IPAK TO-92 Rthj-case Thermal Resistance Junction-case Max 4.16 Rthj-amb Thermal Resistance Junction-ambient Max 100 120 °C/W 40 °C/W 275 260 °C Rthj-lead Tl °C/W Thermal Resistance Junction-lead Max Maximum Lead Temperature For Soldering Purpose AVALANCHE CHARACTERISTICS Symbol Parameter Max Value DPAK / IPAK 2/13 Unit TO-92 IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) 1 A EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 25 mJ STD1NK60 - STD1NK60-1 - STQ1HNK60R ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) ON/OFF Symbol Parameter Test Conditions Drain-source Breakdown Voltage ID = 1 mA, VGS = 0 IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating, TC = 125 °C IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 30V VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA RDS(on) Static Drain-source On Resistance VGS = 10V, ID = 0.5 A V(BR)DSS Min. Typ. Max. 600 2.25 Unit V 1 50 µA µA ±100 nA 3 3.7 V 8 8.5 Ω Typ. Max. Unit DYNAMIC Symbol gfs (1) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions Min. VDS > ID(on) x RDS(on)max, ID = 0.5 A VDS = 25V, f = 1 MHz, VGS = 0 1 S 156 23.5 3.8 pF pF pF SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time VDD = 300 V, ID = 0.5 A RG = 4.7Ω VGS = 10 V (Resistive Load see, Figure 3) 6.5 5 Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 480V, ID = 1.0 A, VGS = 10V, RG = 4.7Ω 7 1.1 3.4 10 nC nC nC Typ. Max. Unit ns ns SWITCHING OFF Symbol Parameter Test Conditions Min. td(off) tf Turn-off Delay Time Fall Time VDD = 300 V, ID = 0.5 A RG = 4.7Ω VGS = 10 V (Resistive Load see, Figure 3) 19 25 ns ns tr(Voff) tf tc Off-voltage Rise Time Fall Time Cross-over Time VDD = 480V, ID = 1.0 A, RG = 4.7Ω, VGS = 10V (Inductive Load see, Figure 5) 24 25 44 ns ns ns SOURCE DRAIN DIODE Symbol Parameter Test Conditions ISD ISDM (2) Source-drain Current Source-drain Current (pulsed) VSD (1) Forward On Voltage ISD = 1.0 A, VGS = 0 Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 1.0 A, di/dt = 100A/µs VDD = 25V, Tj = 150°C (see test circuit, Figure 5) trr Qrr IRRM Min. Typ. 229 377 3.3 Max. Unit 1 4 A A 1.6 V ns µC A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3/13 STD1NK60 - STD1NK60-1 - STQ1HNK60R Safe Operating Area For DPAK/IPAK Thermal Impedance For DPAK/IPAK Safe Operating Area For TO-92 Thermal Impedance For TO-92 Output Characteristics Transfer Characteristics 4/13 STD1NK60 - STD1NK60-1 - STQ1HNK60R Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations Normalized Gate Threshold Voltage vs Temp. Normalized On Resistance vs Temperature 5/13 STD1NK60 - STD1NK60-1 - STQ1HNK60R Source-drain Diode Forward Characteristics Normalized BVDSS vs Temperature Max Id Current vs Tc Maximum Avalanche Energy vs Temperature 6/13 STD1NK60 - STD1NK60-1 - STQ1HNK60R Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 7/13 STD1NK60 - STD1NK60-1 - STQ1HNK60R TO-251 (IPAK) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 2.2 2.4 0.086 0.094 A1 0.9 1.1 0.035 0.043 A3 0.7 1.3 0.027 0.051 B 0.64 0.9 0.025 0.031 B2 5.2 5.4 0.204 0.212 B3 0.85 B5 0.033 0.3 0.012 B6 0.95 0.037 C 0.45 0.6 0.017 C2 0.48 0.6 0.019 0.023 0.023 D 6 6.2 0.236 0.244 E 6.4 6.6 0.252 0.260 G 4.4 4.6 0.173 0.181 H 15.9 16.3 0.626 0.641 L 9 9.4 0.354 0.370 L1 0.8 1.2 0.031 L2 0.8 0.047 1 0.031 0.039 A1 C2 A3 A C H B B6 = 1 = 2 G = = = E B2 = 3 B5 L D B3 L2 L1 0068771-E 8/13 STD1NK60 - STD1NK60-1 - STQ1HNK60R TO-252 (DPAK) MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 2.20 2.40 0.087 0.094 A1 0.90 1.10 0.035 0.043 A2 0.03 0.23 0.001 0.009 B 0.64 0.90 0.025 0.035 B2 5.20 5.40 0.204 0.213 C 0.45 0.60 0.018 0.024 C2 0.48 0.60 0.019 0.024 D 6.00 6.20 0.236 0.244 E 6.40 6.60 0.252 0.260 G 4.40 4.60 0.173 0.181 H 9.35 10.10 0.368 0.398 L2 L4 V2 0.8 0.60 0 o 0.031 1.00 8 o 0.024 0 o 0.039 0o P032P_B 9/13 STD1NK60 - STD1NK60-1 - STQ1HNK60R TO-92 MECHANICAL DATA mm. inch DIM. MAX. MIN. A 4.32 MIN. 4.95 0.170 0.194 TYP. MAX. b 0.36 0.51 0.014 0.020 D 4.45 4.95 0.175 0.194 E 3.30 3.94 0.130 0.155 e 2.41 2.67 0.094 0.105 e1 1.14 1.40 0.044 0.055 L 12.70 15.49 0.50 0.610 R 2.16 2.41 0.085 0.094 S1 0.92 1.52 0.036 0.060 W 0.41 0.56 0.016 0.022 V 10/13 TYP 5° 5° STD1NK60 - STD1NK60-1 - STQ1HNK60R DPAK FOOTPRINT TUBE SHIPMENT (no suffix)* All dimensions are in millimeters All dimensions are in millimeters TAPE AND REEL SHIPMENT (suffix ”T4”)* REEL MECHANICAL DATA DIM. mm MIN. A DIM. mm inch MIN. MAX. A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 12.1 0.476 B1 1.6 MIN. D 1.5 1.5 E 1.65 1.85 0.065 0.073 F 7.4 7.6 0.291 0.299 B 1.5 C 12.8 D 20.2 G 16.4 N 50 2.55 2.75 0.100 0.108 3.9 4.1 0.153 0.161 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 0.075 0.082 16.3 1.574 0.618 40 0.059 13.2 0.504 0.520 0.795 18.4 0.645 0.724 1.968 22.4 0.881 BASE QTY BULK QTY 2500 2500 0.059 0.063 K0 15.7 MAX. 12.992 0.059 P0 R MIN. MAX. D1 W MAX. 330 T TAPE MECHANICAL DATA inch 0.641 * on sales type 11/13 STD1NK60 - STD1NK60-1 - STQ1HNK60R TO-92 AMMOPACK DIM. mm. MIN. TYP A1 inch MAX. MIN. TYP. 4.8 MAX. 0.19 T 3.8 0.15 T1 1.6 0.06 T2 2.3 d 0.458 P0 12.5 P2 F1, F2 0.09 0.505 0.018 0.02 12.7 12.9 0.49 0.5 0.51 5.65 6.35 7.05 0.22 0.25 0.27 2.44 2.54 2.94 0.09 0.1 0.11 delta H -2 2 -0.08 W 17.5 18 19 0.69 0.71 0.74 W0 5.7 6 6.3 0.22 0.23 0.24 W1 8.5 9 9.25 0.33 0.35 0.36 W2 0.5 H 18.5 H0 15.5 16 H1 D0 0.02 20.5 0.72 16.5 0.61 0.80 0.63 25 3.8 4 4.2 0.65 0.98 0.15 0.157 0.16 t 0.9 0.035 L 11 0.43 l1 3 delta P -1 12/13 0.08 0.11 1 -0.04 0.04 STD1NK60 - STD1NK60-1 - STQ1HNK60R Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. © The ST logo is a registered trademark of STMicroelectronics © 2003 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. © http://www.st.com 13/13