STMICROELECTRONICS STQ1HNK60R-AP

STD1NK60 - STD1NK60-1
STQ1HNK60R
N-CHANNEL 600V - 8Ω - 1A DPAK / IPAK / TO-92
SuperMESH™Power MOSFET
TYPE
STD1NK60
STD1NK60-1
STQ1HNK60R
■
■
■
■
■
VDSS
RDS(on)
ID
Pw
600 V
600 V
600 V
< 8.5 Ω
< 8.5 Ω
< 8.5 Ω
1A
1A
0.4 A
30 W
30 W
3W
TYPICAL RDS(on) = 8 Ω
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
GATE CHARGE MINIMIZED
NEW HIGH VOLTAGE BENCHMARK
DESCRIPTION
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing
on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the
most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.
3
3
2
1
1
IPAK
TO-92 (Ammopack)
DPAK
TO-92
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
SWITCH MODE LOW POWER SUPPLIES
(SMPS)
■ LOW POWER, LOW COST CFL (COMPACT
FLUORESCENT LAMPS)
■ LOW POWER BATTERY CHARGERS
■
ORDERING INFORMATION
SALES TYPE
MARKING
PACKAGE
PACKAGING
STD1NK60T4
D1NK60
DPAK
TAPE & REEL
STD1NK60-1
D1NK60
IPAK
TUBE
STQ1HNK60R
1HNK60R
TO-92
BULK
STQ1HNK60R-AP
1HNK60R
TO-92
AMMOPAK
June 2003
1/13
STD1NK60 - STD1NK60-1 - STQ1HNK60R
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
STD1NK60
STD1NK60-1
VDS
VDGR
VGS
Unit
STQ1HNK60R
Drain-source Voltage (VGS = 0)
600
V
Drain-gate Voltage (RGS = 20 kΩ)
600
V
Gate- source Voltage
± 30
V
ID
Drain Current (continuous) at TC = 25°C
1.0
0.4
A
ID
Drain Current (continuous) at TC = 100°C
IDM ()
PTOT
0.63
0.25
A
Drain Current (pulsed)
4
1.6
A
Total Dissipation at TC = 25°C
30
3
W
0.025
W/°C
Derating Factor
dv/dt (1)
Tj
Tstg
0.24
Peak Diode Recovery voltage slope
Operating Junction Temperature
Storage Temperature
3
V/ns
-55 to 150
°C
( ) Pulse width limited by safe operating area
(1) ISD ≤1.0A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
THERMAL DATA
DPAK / IPAK
TO-92
Rthj-case
Thermal Resistance Junction-case Max
4.16
Rthj-amb
Thermal Resistance Junction-ambient Max
100
120
°C/W
40
°C/W
275
260
°C
Rthj-lead
Tl
°C/W
Thermal Resistance Junction-lead Max
Maximum Lead Temperature For Soldering
Purpose
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
DPAK / IPAK
2/13
Unit
TO-92
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
1
A
EAS
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
25
mJ
STD1NK60 - STD1NK60-1 - STQ1HNK60R
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
Symbol
Parameter
Test Conditions
Drain-source
Breakdown Voltage
ID = 1 mA, VGS = 0
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 30V
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250µA
RDS(on)
Static Drain-source On
Resistance
VGS = 10V, ID = 0.5 A
V(BR)DSS
Min.
Typ.
Max.
600
2.25
Unit
V
1
50
µA
µA
±100
nA
3
3.7
V
8
8.5
Ω
Typ.
Max.
Unit
DYNAMIC
Symbol
gfs (1)
Ciss
Coss
Crss
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
Min.
VDS > ID(on) x RDS(on)max,
ID = 0.5 A
VDS = 25V, f = 1 MHz, VGS = 0
1
S
156
23.5
3.8
pF
pF
pF
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 300 V, ID = 0.5 A
RG = 4.7Ω VGS = 10 V
(Resistive Load see, Figure 3)
6.5
5
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 480V, ID = 1.0 A,
VGS = 10V, RG = 4.7Ω
7
1.1
3.4
10
nC
nC
nC
Typ.
Max.
Unit
ns
ns
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
td(off)
tf
Turn-off Delay Time
Fall Time
VDD = 300 V, ID = 0.5 A
RG = 4.7Ω VGS = 10 V
(Resistive Load see, Figure 3)
19
25
ns
ns
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
VDD = 480V, ID = 1.0 A,
RG = 4.7Ω, VGS = 10V
(Inductive Load see, Figure 5)
24
25
44
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
ISDM (2)
Source-drain Current
Source-drain Current (pulsed)
VSD (1)
Forward On Voltage
ISD = 1.0 A, VGS = 0
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 1.0 A, di/dt = 100A/µs
VDD = 25V, Tj = 150°C
(see test circuit, Figure 5)
trr
Qrr
IRRM
Min.
Typ.
229
377
3.3
Max.
Unit
1
4
A
A
1.6
V
ns
µC
A
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3/13
STD1NK60 - STD1NK60-1 - STQ1HNK60R
Safe Operating Area For DPAK/IPAK
Thermal Impedance For DPAK/IPAK
Safe Operating Area For TO-92
Thermal Impedance For TO-92
Output Characteristics
Transfer Characteristics
4/13
STD1NK60 - STD1NK60-1 - STQ1HNK60R
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
Normalized Gate Threshold Voltage vs Temp.
Normalized On Resistance vs Temperature
5/13
STD1NK60 - STD1NK60-1 - STQ1HNK60R
Source-drain Diode Forward Characteristics
Normalized BVDSS vs Temperature
Max Id Current vs Tc
Maximum Avalanche Energy vs Temperature
6/13
STD1NK60 - STD1NK60-1 - STQ1HNK60R
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuit For
Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
7/13
STD1NK60 - STD1NK60-1 - STQ1HNK60R
TO-251 (IPAK) MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
A
2.2
2.4
0.086
0.094
A1
0.9
1.1
0.035
0.043
A3
0.7
1.3
0.027
0.051
B
0.64
0.9
0.025
0.031
B2
5.2
5.4
0.204
0.212
B3
0.85
B5
0.033
0.3
0.012
B6
0.95
0.037
C
0.45
0.6
0.017
C2
0.48
0.6
0.019
0.023
0.023
D
6
6.2
0.236
0.244
E
6.4
6.6
0.252
0.260
G
4.4
4.6
0.173
0.181
H
15.9
16.3
0.626
0.641
L
9
9.4
0.354
0.370
L1
0.8
1.2
0.031
L2
0.8
0.047
1
0.031
0.039
A1
C2
A3
A
C
H
B
B6
=
1
=
2
G
=
=
=
E
B2
=
3
B5
L
D
B3
L2
L1
0068771-E
8/13
STD1NK60 - STD1NK60-1 - STQ1HNK60R
TO-252 (DPAK) MECHANICAL DATA
mm
DIM.
MIN.
TYP.
inch
MAX.
MIN.
TYP.
MAX.
A
2.20
2.40
0.087
0.094
A1
0.90
1.10
0.035
0.043
A2
0.03
0.23
0.001
0.009
B
0.64
0.90
0.025
0.035
B2
5.20
5.40
0.204
0.213
C
0.45
0.60
0.018
0.024
C2
0.48
0.60
0.019
0.024
D
6.00
6.20
0.236
0.244
E
6.40
6.60
0.252
0.260
G
4.40
4.60
0.173
0.181
H
9.35
10.10
0.368
0.398
L2
L4
V2
0.8
0.60
0
o
0.031
1.00
8
o
0.024
0
o
0.039
0o
P032P_B
9/13
STD1NK60 - STD1NK60-1 - STQ1HNK60R
TO-92 MECHANICAL DATA
mm.
inch
DIM.
MAX.
MIN.
A
4.32
MIN.
4.95
0.170
0.194
TYP.
MAX.
b
0.36
0.51
0.014
0.020
D
4.45
4.95
0.175
0.194
E
3.30
3.94
0.130
0.155
e
2.41
2.67
0.094
0.105
e1
1.14
1.40
0.044
0.055
L
12.70
15.49
0.50
0.610
R
2.16
2.41
0.085
0.094
S1
0.92
1.52
0.036
0.060
W
0.41
0.56
0.016
0.022
V
10/13
TYP
5°
5°
STD1NK60 - STD1NK60-1 - STQ1HNK60R
DPAK FOOTPRINT
TUBE SHIPMENT (no suffix)*
All dimensions
are in millimeters
All dimensions are in millimeters
TAPE AND REEL SHIPMENT (suffix ”T4”)*
REEL MECHANICAL DATA
DIM.
mm
MIN.
A
DIM.
mm
inch
MIN.
MAX.
A0
6.8
7
0.267 0.275
B0
10.4
10.6
0.409 0.417
12.1
0.476
B1
1.6
MIN.
D
1.5
1.5
E
1.65
1.85
0.065 0.073
F
7.4
7.6
0.291 0.299
B
1.5
C
12.8
D
20.2
G
16.4
N
50
2.55
2.75
0.100 0.108
3.9
4.1
0.153 0.161
P1
7.9
8.1
0.311 0.319
P2
1.9
2.1
0.075 0.082
16.3
1.574
0.618
40
0.059
13.2
0.504 0.520
0.795
18.4
0.645 0.724
1.968
22.4
0.881
BASE QTY
BULK QTY
2500
2500
0.059 0.063
K0
15.7
MAX.
12.992
0.059
P0
R
MIN.
MAX.
D1
W
MAX.
330
T
TAPE MECHANICAL DATA
inch
0.641
* on sales type
11/13
STD1NK60 - STD1NK60-1 - STQ1HNK60R
TO-92 AMMOPACK
DIM.
mm.
MIN.
TYP
A1
inch
MAX.
MIN.
TYP.
4.8
MAX.
0.19
T
3.8
0.15
T1
1.6
0.06
T2
2.3
d
0.458
P0
12.5
P2
F1, F2
0.09
0.505
0.018
0.02
12.7
12.9
0.49
0.5
0.51
5.65
6.35
7.05
0.22
0.25
0.27
2.44
2.54
2.94
0.09
0.1
0.11
delta H
-2
2
-0.08
W
17.5
18
19
0.69
0.71
0.74
W0
5.7
6
6.3
0.22
0.23
0.24
W1
8.5
9
9.25
0.33
0.35
0.36
W2
0.5
H
18.5
H0
15.5
16
H1
D0
0.02
20.5
0.72
16.5
0.61
0.80
0.63
25
3.8
4
4.2
0.65
0.98
0.15
0.157
0.16
t
0.9
0.035
L
11
0.43
l1
3
delta P
-1
12/13
0.08
0.11
1
-0.04
0.04
STD1NK60 - STD1NK60-1 - STQ1HNK60R
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
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© 2003 STMicroelectronics - Printed in Italy - All Rights Reserved
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13/13