UTC-IC UF740

UNISONIC TECHNOLOGIES CO., LTD
UF740
MOSFET
10A, 400V, 0.55 OHM,
N-CHANNEL POWER MOSFET
1
DESCRIPTION
TO-220
The UF740 power MOSFET is designed for high voltage, high
speed power switching applications such as switching power
supplies, switching adaptors etc.
FEATURES
1
* 10A, 400V, RDS(ON)(0.55Ω)
* Single Pulse Avalanche Energy Rated
* Rugged - SOA is Power Dissipation Limited
* Fast Switching
TO-220F
*Pb-free plating product number: UF740L
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Order Number
Package
Normal
Lead Free Plating
UF740-TA3-T
UF740L-TA3-T
TO-220
UF740-TF3-T
UF740L-TF3-T
TO-220F
Note: Pin Assignment: G: GATE D: DRAIN S: SOURCE
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tube
Tube
UF740L-TA3-T
(1)Packing Type
(2)Package Type
(3)Lead Plating
www.unisonic.com.tw
Copyright © 2005 Unisonic Technologies Co., Ltd
(1) T: Tube
(2) TA3: TO-220, TF3: TO-220F
(3) L: Lead Free Plating, Blank: Pb/Sn
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QW-R502-078,A
UF740
MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25℃, Unless Otherwise Specified)
PARAMETER
Drain to Source Voltage (TJ =25℃~125℃)
Drain to Gate Voltage (RGS = 20kΩ) (TJ =25℃~125℃)
Gate to Source Voltage
Continuous
TC = 100℃
Drain Current
Pulsed
SYMBOL
VDS
VDGR
VGS
ID
ID
IDM
Maximum Power Dissipation
Derating above 25℃
PD
RATINGS
400
400
±20
10
6.3
40
125
UNIT
V
V
V
A
A
A
W
1.0
W/℃
Single Pulse Avalanche Energy Rating
520
mJ
EAS
(VDD=50V, starting TJ =25℃, L=9.1µH, RG=25Ω, peak IAS = 10A)
Operating Temperature Range
TOPR
-55 ~ +150
℃
Storage Temperature Range
TSTG
-55 ~ +150
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Thermal Resistance Junction-Ambient
Thermal Resistance Junction-Case
SYMBOL
θJA
θJc
RATINGS
62.5
1.0
UNIT
℃/W
ELECTRICAL CHARACTERISTICS (TC =25℃, Unless Otherwise Specified.)
PARAMETER
Drain to Source Breakdown
Voltage
Gate to Threshold Voltage
On-State Drain Current (Note 1)
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance
(Note 1)
Forward Transconductance
(Note 1)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain “Miller” Charge
Input Capacitance
Output Capacitance
Reverse - Transfer Capacitance
SYMBOL TEST CONDITIONS
BVDSS
VGS = 0V, ID = 250µA
VGS(THR) VGS = VDS, ID = 250µA
ID(ON)
VDS >ID(ON) x RDS(ON)MAX, VGS =10V
VDS = Rated BVDSS, VGS = 0V
IDSS
VDS=0.8 x Rated BVDSS, VGS=0V,TJ=125℃
IGSS
VGS = ±20V
RDS(ON)
VGS = 10V, ID = 5.2A
gFS
VDS ≥ 50V, ID = 5.2A
tDLY(ON)
tR
tDLY(OFF)
tF
QG(TOT)
QGS
QGD
CISS
COSS
CRSS
VDD = 200V, ID ≈ 10A,
RGS = 9.1Ω, RL = 20Ω, VGS = 10V
MOSFET Switching Times are Essentially
Independent of Operating Temperature
VGS = 10V, ID = 10A
VDS = 0.8 x Rated BVDSS
IG(REF) = 1.5mA
Gate Charge is Essentially Independent of
Operating Temperature
VGS = 0V, VDS =25V, f = 1.0MHz
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN TYP MAX UNIT
400
V
2.0
10
5.8
4.0
25
250
±500
V
A
µA
µA
nA
0.47 0.55
Ω
8.9
S
15
25
52
25
21
41
75
36
ns
ns
ns
ns
41
63
nC
6.5
nC
23
nC
1250
300
80
pF
pF
pF
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QW-R502-078,A
UF740
MOSFET
ELECTRICAL CHARACTERISTICS(Cont.)
SOURCE TO DRAIN DIODE SPECIFICATIONS
Source to Drain Diode Voltage
TJ = 25℃, ISD = 10A, VGS = 0V
VSD
(Note 1)
Modified MOSFET
Continuous Source to Drain
IS
Symbol Showing
Current
the Integral
Pulse Source to Drain Current
Reverse P-N
(Note 2)
Junction Diode
G
ISM
D
S
TJ = 25℃, ISD = 10A, dISD/dt = 100A/µs
Reverse Recovery Time
tRR
TJ = 25℃, ISD = 10A, dISD/dt = 100A/µs
Reverse Recovery Charge
QRR
NOTES:
1. Pulse Test: Pulse width ≤ 300µs, Duty Cycle≤2%.
2. Repetitive rating: Pulse width limited by maximum junction temperature.
3. VDD = 50V, starting TJ = 25℃, L = 3.37mH, RG = 25Ω, peak IAS = 10A.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
170
1.6
390
4.5
2.0
V
10
A
40
A
790
8.2
ns
µC
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QW-R502-078,A
UF740
MOSFET
TEST CIRCUITS AND WAVEFORMS
VDS
BVDSS
L
RG
VDS
VDD
IAS
VDD
D.U.T.
0
0.01Ω
tp
tAV
IAS
Figure 1A. Unclamped Energy Test Circuit
Figure 1B. Unclamped Energy Waveforms
VDS
90%
RL
10%
0
RG
90%
VDD
VGS
D.U.T.
VGS
50%
10%
0
tD(ON)
50%
PULSE WIDTH
tR
t D(OFF) t F
t OFF
tON
Figure 2B. Resistive Switching Waveforms
Figure 2A. Switching Time Test Circuit
VDS
(ISOLATED
SUPPLY)
CURRENT
REGULATOR
12V
BATTERY
VDD
SAME TYPE
AS DUT
50kΩ
Q G(TOT)
QGS
0.3µF
0.2µF
Q GD
VGS
D
VDS
DUT
G
0
IG(REF)
IG CURRENT
SAMPLING
RESISTOR
S
IG(REF)
I D CURRENT
SAMPLING
RESISTOR
Figure 3A. Gate Charge Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
0
0
Figure 3B. Gate Charge Waveforms
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QW-R502-078,A
UF740
MOSFET
TYPICAL PERFORMANCE CUVES (Unless Otherwise Specified)
Output Characteristics
Forward Bias Safe Operating Area
100
15
1ms
OPERATION IN THIS
1
REGION IS LIMITED BY
RDS(ON)
TC=25℃
TJ=MAX RATED
SINGLE PULSE
15
1
10ms
DC
10
102
VGS = 5.5V
9
VGS = 5.0V
6
VGS = 4.5V
3
0
103
0
80
40
120
Saturation Characteristics
Transfer Characteristics
VGS=10V
100
VGS=6.0V
VGS=5.5V
9
VGS=5.0V
6
VGS=4.5V
3
4
2
6
8
10
200
160
Drain to Source Voltage, VDS (V)
VGS=4.0V
PULSE DURATION=80μS
DUTY CYCLE = 0.5% MAX
VDS≥50V
10
0.1
T J = 25℃
T J = 150℃
1
2
0
4
8
6
10
Drain to Source Voltage, VDS (V)
Gate to Source Voltage, VSD (V)
Normalized Drain to Source Breakdown Voltage vs. Junction
Temperature
Capacitance vs. Drain to Source Voltage
1.25
2500
I D=250μA
1.15
Capacitance, C (pF)
Normalized Drain to Source
Breakdown Voltage
12
Drain to Source Voltage, VDS (V)
PULSE DURATION=80μS
DUTY CYCLE = 0.5% MAX
0
PULSE DURATION=80μS
DUTY CYCLE = 0.5% MAX
VGS = 10V
VGS = 6.0V
VGS = 4.0V
12
0
Drain Current, I D (A)
10
0.1
Drain Current, ID (A)
100μs
Drain to Source Current, IDS (ON) (A)
Drain Current, I D (A)
10μs
1.05
0.95
0.85
0.75
-60 -40 -20
0
20 40 60 80
100120 140 160
Junction Temperature, T J (℃)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
VGS=0V, f=1MHz
CISS=CGS+C GD
CRSS=CGD
COSS≈C DS+CGD
2000
1500
CISS
1000
CRSS
500
0
1
2
5
COSS
10
2
5
102
2
5
103
Drain to Source Voltage, VDS (V)
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QW-R502-078,A
UF740
MOSFET
TYPICAL PERFORMANCE CUVES (Cont.)
Source to Drain Diode Voltage
Transconduce vs. Drain Current
100
PULSE DURATION=80μS
DUTY CYCLE = 0.5% MAX
Source to Drain Current, ISD (A)
Transconductance, g FS (S)
15
12
T J = 25℃
9
TJ = 150℃
6
3
0
0
4
8
12
16
PULSE DURATION=80μS
DUTY CYCLE = 0.5% MAX
10
T J = 150℃
TJ = 25℃
1.0
0.1
20
0
0.3
20
Pulse Duration=80μs
Duty Cycle = 0.5% Max
3
VGS =10V
2
VGS=20V
1
0
25
10
20
30
Drain Current, I D (A)
1.2
1.5
Gate to Source Voltage vs. Gate Charge
Gate to Source Voltage, VGS (V)
Drain to Source on Resistance, R DS (ON) (Ω)
Drain to Source on Resistance vs. Voltage and Drain
Current
4
0.9
Source to Drain Voltage, VSD (V)
Drain Current, ID (A)
5
0.6
40
50
I D=10A
16
VDS=80V
12
VDS=200V
8
VDS=320V
4
0
0
12
36
24
Gate Charge, Q G (nC)
48
60
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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