UNISONIC TECHNOLOGIES CO., LTD UTM2513 Power MOSFET N-CHANNEL ENHANCEMENT MODE FEATURES * RDS(ON) = 10.5mΩ(typ.) @VGS = 10 V * RDS(ON) = 16mΩ(typ.) @VGS = 4.5 V * Low capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified SYMBOL 2.Drain Lead-free: UTM2513L Halogen-free: UTM2513G 1.Gate 3.Source ORDERING INFORMATION Normal UTM2513-TN3-R UTM2513-TN3-T Ordering Number Lead Free Plating UTM2513L-TN3-R UTM2513L-TN3-T Halogen Free UTM2513G-TN3-R UTM2513G-TN3-T www.unisonic.com.tw Copyright © 2008 Unisonic Technologies Co., Ltd Package TO-252 TO-252 Pin Assignment 1 2 3 G D S G D S Packing Tape Reel Tube 1 of 4 QW-R502-228.A UTM2513 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 25 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current ID 40 A Pulsed Drain Current IDM 90 A Power Dissipation PD 50 W Junction Temperature TJ 150 °C Storage Temperature TSTG -55 ~ +150 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width limited by TJ(MAX) ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise noted) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current ON CHARACTERISTICS Gate Threshold Voltage Drain-Source On-State Resistance(Note) SYMBOL TEST CONDITIONS BVDSS IDSS IGSS VGS=0V, IDS=250µA VDS=24V, VGS=0V VDS=0V, VGS=±20V 25 VGS(TH) VDS=VGS, IDS=250µA VGS=10V, IDS=12A VGS=4.5V, IDS=10A 1.30 RDS(ON) DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS=15V, VGS=0V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Turn-ON Delay Time (Note) tD(ON) Turn-ON Rise Time tR IDS=1A, VDD=15V, RG=3Ω, Turn-OFF Delay Time tD(OFF) Turn-OFF Fall Time tF Total Gate Charge (Note) QG VDS=15V, VGS=10V, IDS=10A Gate-Source Charge QGS Gate-Drain Charge QGD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage(Note) VSD ISD=10A, VGS=0V Note: Pulse width ≤300us, duty cycle ≤2% UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 1 ±100 1.80 10.5 16 2.50 13 23 1560 345 245 V µA nA V mΩ pF pF pF 30 60 272 168 28 3.6 8.4 35 67 285 172 38 ns ns ns ns nC nC nC 0.9 1.3 V 2 of 4 QW-R502-228.A UTM2513 TYPICAL CHARACTERISTICS Drain Current, ID (A) Power MOSFET UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 4 QW-R502-228.A UTM2513 Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R502-228.A