UNISONIC TECHNOLOGIES CO., LTD UT30P03 Preliminary Power MOSFET P-CHANNEL ENHANCEMENT MODE FEATURES * RDS(ON) = 40mΩ @VGS =-10 V * Low Capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified 1 SYMBOL 2.Drain TO-252 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free UT30P03L-TN3-R UT30P03G-TN3-R www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd Package TO-252 1 G Pin Assignment 2 3 D S Packing Tape Reel 1 of 3 QW-R502-335.b UT30P03 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current ID -26 A Power Dissipation PD 50 W Junction Temperature TJ +175 °C Storage Temperature TSTG -55 ~ +175 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL θJA θJC RATINGS 50 3 UNIT °C/W °C/W ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V, ID =-250 μA Drain-Source Leakage Current IDSS VDS=-30V, VGS=0V Gate-Source Leakage Current IGSS VGS=±20V, VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=-250 μA Static Drain-Source On-State Resistance VGS=-10V, ID =-10A RDS(ON) (Note) VGS=-4.5V, ID =-10A DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS =-25V, VGS=0V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) VDS =-15V, ID=1A, RL = 15Ω, Turn-On Rise Time tR VGS=-10V, RG=3.3Ω Turn-Off Delay Time tD(OFF) Turn-Off Fall Time tF Total Gate Charge QG VDS= -24V, ID= -30A, VGS= -4.5V Gate-Source Charge QGS Gate-Drain Charge QGD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD VGS = 0V, IS =-10A Maximum Continuous Drain-Source Diode IS Forward Current Note: Pulse Test: Pulse width≤300μs, Duty cycle≤2% UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT -30 -1 30 40 -1 ±100 V μA nA -3 40 60 V mΩ mΩ 700 130 120 pF pF pF 25 50 380 180 100 15 10 ns ns ns ns nC nC nC -1.2 V -26 A 2 of 3 QW-R502-335.b UT30P03 Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R502-335.b