Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UT2321
Power MOSFET
P-CHANNEL ENHANCEMENT
MODE FIELD EFFECT
TRANSISTOR

DESCRIPTION
The UT2321 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with low gate
voltages. This device is suitable for use as a load switch or in PWM
applications.

FEATURES
* RDS(ON) < 55mΩ @ VGS=-4.5V, ID=-2.4A
* RDS(ON) < 80mΩ @ VGS=-2.5V, ID=-2.0A
* Low capacitance
* Low gate charge
* Fast switching capability
* Avalanche energy specified

SYMBOL
3.Drain
2.Gate
1.Source

ORDERING INFORMATION
Ordering Number
Note:

UT2321G-AE3-R
Pin Assignment: G: Gate
D: Drain
Package
SOT-23
Pin Assignment
1
2
3
S
G
D
Packing
Tape Reel
S: Source
MARKING
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
1 of 4
QW-R502-249.F
UT2321

Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
-20
V
Gate-Source Voltage
VGSS
±12
V
Continuous Drain Current (Note 2)
ID
-3.8
A
Pulsed Drain Current (Note 2)
IDM
-15.2
A
Power Dissipation (Note 3)
PD
1.25
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by TJ(MAX)
3. Surface mounted on 1 in 2 copper pad of FR4 board.

THERMAL DATA
PARAMETER
Junction to Ambient

SYMBOL
θJA
RATINGS
100
UNIT
°C/W
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Forward
Gate-Source Leakage Current
Reverse
ON CHARACTERISTICS(Note)
Gate-Threshold Voltage
Static Drain-Source On-Resistance
SYMBOL
BVDSS
IDSS
IGSS
VGS(TH)
RDS(ON)
TEST CONDITIONS
VGS=0V, ID=-250µA
VDS=-16V, VGS=0V
VGS=12V, VDS=0V
VGS=-12V, VDS=0V
-20
VDS=VGS, ID=-250µA
VGS=-4.5V, ID=-2.4A
VGS=-2.5V, ID=-2.0A
-0.4
DYNAMIC PARAMETERS
Input Capacitance
CISS
VDS=-10 V, VGS =0V, f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge
QG
VDS=-10V, VGS=-4.5V, ID=-2.4A
Gate-Source Charge
QGS
Gate-Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
Turn-ON Rise Time
tR
VDD=-10V, ID=-1A, VGS=-4.5V,
RGEN=6 Ω
Turn-OFF Delay Time
tD(OFF)
Turn-OFF Fall-Time
tF
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Diode Forward Voltage(Note)
VSD
VGS=0V, IS =-0.42A
Maximum Body-Diode Continuous
IS
Current
Note: Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
TYP
45
65
MAX UNIT
-1
100
-100
V
µA
nA
nA
-1.0
55
80
V
mΩ
mΩ
1500
270
185
14.8
2.8
4.4
13
8
65
29
pF
pF
pF
19
24
24
256
72
nC
nC
nC
ns
ns
ns
ns
-1.2
V
-0.42
A
2 of 4
QW-R502-249.F
UT2321
TYPICAL CHARACTERISTICS
Drain Current, ID (A)

Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 4
QW-R502-249.F
UT2321
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 4
QW-R502-249.F