UNISONIC TECHNOLOGIES CO., LTD UT3406 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UT3406 uses advanced trench technology to provide excellent RDS(ON), low gate charge and can be operated at low gate voltages. This device is perfect fit for use as a load switch or in PWM applications. FEATURES * VDS (V) = 30V * ID = 3.6A (VGS = 10V) * RDS(ON) <65mΩ (VGS = 10V) * RDS(ON) <105mΩ (VGS = 4.5V) * Halogen Free SYMBOL ORDERING INFORMATION Ordering Number Package UT3406G-AE3-R SOT-23 Pin Assignment 1 2 3 S G D Packing Tape Reel MARKING 346G www.unisonic.com.tw Copyright © 2009 Unisonic Technologies Co., Ltd 1 of 3 QW-R502-336.a UT3406 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 Continuous Drain Current (Ta=25°C) ID 3.6 A Pulsed Drain Current (Note 2) IDM 15 A Power Dissipation (Ta=25°C) PD 1.4 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width limited by TJ(MAX) THERMAL DATA PARAMETER SYMBOL θJA Junction to Ambient MIN TYP 100 MAX 125 UNIT °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current ON CHARACTERISTICS Gate Threshold Voltage On State Drain Current Static Drain-Source On-Resistance SYMBOL TEST CONDITIONS BVDSS IDSS IGSS VGS=0 V, ID=250 µA VDS=24 V,VGS=0 V VGS=±20 V, VDS=0 V 30 VGS(TH) ID(ON) VD S= VGS, ID=250 µA VGS =10 V, VDS =5 V VGS=10 V, ID=3.6 A VGS=4.5 V, ID=2.8 A 1 15 RDS(ON) DYNAMIC PARAMETERS Input Capacitance CISS VDS=15V, VGS=0 V, f=1MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Turn-ON Delay Time tD(ON) VGS=10V,VDS=15V, RL=2.2Ω, Turn-ON Rise Time tR RGEN=3Ω Turn-OFF Delay Time tD(OFF) Turn-OFF Fall-Time tF Total Gate Charge QG VGS=10 V, VDS=15 V, ID=3.6A Gate Source Charge QGS Gate Drain Charge QGD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD IS=1 A Maximum Body-Diode Continuous Current IS Body Diode Reverse Recovery Time tRR IF=3.6A, dI/dt=100A/μs Body Diode Reverse Recovery Charge QRR Note: Surface mounted on 1 in2 copper pad of FR4 board UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 1 100 1.9 3 50 75 65 105 288 57 39 375 4.6 1.9 20.1 2.6 6.5 1.2 1.6 0.79 10.2 3.5 8.5 1 2.5 14 V µA nA V A mΩ mΩ pF pF pF ns ns ns ns nC nC nC V A ns nC 2 of 3 QW-R502-336.a UT3406 Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R502-336.a