UNISONIC TECHNOLOGIES CO., LTD UMBF170 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION 3 The UMBF170 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. 2 FEATURES SOT-23-3 (JEDEC TO-236) * RDS(ON)<5Ω@VGS=10V * RDS(ON)<5.3Ω@VGS=4.5V * Low Reverse Transfer Capacitance ( CRSS = typical 7.5 pF ) * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness 1 SYMBOL 3.Drain 2.Gate 1.Source ORDERING INFORMATION Ordering Number Package UMBF170G-AE2-R SOT-23-3 1 S Pin Assignment 2 G 3 D Packing Tape Reel MARKING www.unisonic.com.tw Copyright © 2010 Unisonic Technologies Co., Ltd 1 of 4 QW-R502-291.b UMBF170 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 60 V Drain-Gate Voltage (RG=25kΩ) VDGS 60 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (VGS=10V) ID 300 mA Peak Drain Current (tP≦10µs) IDM 1.2 A Power Dissipation PD 0.83 W ℃ Junction Temperature TJ +150 ℃ Storage Temperature TSTG -65 ~ +150 Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER Junction-to-Ambient SYMBOL θJA RATINGS 350 UNIT K/W ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise noted) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage SYMBOL BVDSS Drain-Source Leakage Current IDSS Gate-Source Leakage Current ON CHARACTERISTICS Gate Threshold Voltage IGSS Static Drain-Source On-Resistance VGS(TH) RDS(ON) TEST CONDITIONS MIN TYP MAX UNIT VGS=0 V, ID=10µA VDS=48V, VGS=0V VDS=25V, VGS=0V VGS= ±15V, VDS=0V 60 75 0.01 1.0 5 500 10 100 V µA nA nA VDS=VGS, ID=1mA VGS=10V, ID=300mA VGS=4.5V, ID=75mA VDS=10V, ID=200mA 1 2 2.8 3.8 300 V 5 5.3 25 18 7.5 40 30 10 pF pF pF 3 12 10 15 ns ns 0.85 1.5 300 1.2 V mA A ns nC Forward Transconductance gFS DYNAMIC PARAMETERS Input Capacitance CISS VDS=10 V, VGS=0 V, f=1MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Turn-ON Delay Time tD(ON) VDD=50V, VGS=10V, RGS=50Ω RG=50Ω, RD=250Ω Turn-OFF Delay Time tD(OFF) SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Diode Forward Voltage VSD IS =300mA, VGS=0V Maximum Body-Diode Continuous Current IS pulsed; tP≦10µs Peak Source (Diode Forward) Current ISM Body Diode Reverse Recovery Time tRR IS=300mA, dI/dt=-100A/μs, V Body Diode Reverse Recovery Charge QRR GS=0V, VDS=25V 100 30 30 Ω mS UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 2 QW-R502-291.b