FAIRCHILD FCB20N60F_12

FCB20N60F_F085
600V N-Channe MOSFET
D
D
600V, 20A, 190mΩ
Features
G
„ Typ rDS(on) = 171mΩ at VGS = 10V, ID = 20A
„ Typ Qg(tot) = 78nC at VGS = 10V, ID = 20A
G
„ UIS Capability
TO-263AB
FDB SERIES
S
„ RoHS Compliant
„ Qualified to AEC Q101
S
For current package drawing, please refer to the Fairchild website at www.fairchildsemi.com/packaging
Description
SuperFETTM is, Fairchild’s proprietary, new generation of high
voltage MOSFET family that is utilizing an advanced charge
balance mechanism for outstanding low on-resistance and
lower gate charge performance.
This advanced technology has been tailored to minimize
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate and higher avalanche energy.
Consequently, SuperFET is very suitable for various AC/DC
power conversion in switching mode operation for system
miniaturization and higher efficiency.
MOSFET Maximum Ratings TJ = 25°C unless otherwise noted
Symbol
VDSS
Drain to Source Voltage
VGS
ID
EAS
PD
Parameter
Gate to Source Voltage
Drain Current - Continuous (VGS=10) (Note 1)
TC = 25°C
Pulsed Drain Current
Single Pulse Avalanche Energy
Ratings
600
Units
V
±30
V
20
A
See Figure4
A
(Note 2)
217.8
mJ
Power Dissipation
405
W
Derate above 25oC
2.7
W/oC
TJ, TSTG Operating and Storage Temperature
o
-55 to + 150
C
Thermal Characteristics
RθJC
Thermal Resistance Junction to Case
0.37
RθJA
Maximum Thermal Resistance Junction to Ambient
(Note 3)
43
o
C/W
oC/W
Package Marking and Ordering Information
Device Marking
FCB20N60F
Device
FCB20N60F_F085
Package
TO-263AB
Reel Size
330mm
Tape Width
24mm
Quantity
800 units
Notes:
1: Current is limited by bondwire configuration.
2: Starting TJ = 25°C, L = 10mH, IAS = 6.6A, VDD = 100V during inductor charging and VDD = 0V during time in avalanche
3: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder
mounting surface of the drain pins. RθJC is guaranteed by design while RθJAis determined by the user's board design. The maximum rating
presented here is based on mounting on a 1 in2 pad of 2oz copper.
©2012 Fairchild Semiconductor Corporation
FCB20N60F_F085 Rev. C1
1
www.fairchildsemi.com
FCB20N60F_F085 N-Channel Power Trench® MOSFET
March
2012
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
IDSS
Drain to Source Leakage Current
IGSS
Gate to Source Leakage Current
ID = 250μA, VGS = 0V
VDS = 600V,
VGS = 0V
600
-
-
V
-
-
-
-
10
500
μA
-
-
±100
nA
3.0
4.29
5.0
V
-
171
195
mΩ
-
444
511
mΩ
TJ = 25oC
TJ = 150oC(Note 4)
VGS = ±30V
On Characteristics
VGS(th)
rDS(on)
Gate to Source Threshold Voltage
Drain to Source On Resistance
VGS = VDS, ID = 250μA
ID = 20A,
VGS= 10V
TJ = 25oC
TJ = 150oC(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
f = 1MHz
Qg(ToT)
Total Gate Charge
VGS = 0 to 10V
Qg(th)
Threshold Gate Charge
VGS = 0 to 2V
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller“ Charge
VDS = 25V, VGS = 0V,
f = 1MHz
VDD = 300V
ID = 20A
-
2305
-
pF
-
1310
-
pF
-
105
-
pF
-
0.95
-
Ω
-
78
102
nC
-
6.6
8.6
nC
-
13.8
-
nC
-
41.5
-
nC
Switching Characteristics
ton
Turn-On Time
-
-
176
ns
td(on)
Turn-On Delay Time
-
43
-
ns
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
toff
-
66
-
ns
-
211
-
ns
Fall Time
-
42
-
ns
Turn-Off Time
-
-
403
ns
VDD = 300V, ID = 20A,
VGS = 10V, RGS = 25Ω
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Voltage
ISD = 20A, VGS = 0V
-
-
1.4
V
Trr
Reverse Recovery Time
-
163
-
ns
Qrr
Reverse Recovery Charge
IF = 20A, VDD = 480V
dISD/dt = 100A/μs
-
1285
-
nC
Notes:
4: The maximum value is specified by design at TJ = 150°C. Product is not tested to this condition in production.
FCB20N60F_F085 Rev. C1
2
www.fairchildsemi.com
FCB20N60F_F085 N-Channel Power Trench® MOSFET
Electrical Characteristics TJ = 25°C unless otherwise noted
30
1.0
I D, DRAIN CURRENT (A)
POWER DISSIPATION MULTIPLIER
1.2
0.8
0.6
0.4
0.2
0.0
0
25
50
75
100
125
150
TC, CASE TEMPERATURE(oC)
CURRENT LIMITED
BY PACKAGE
25
20
VGS = 10V
15
10
5
0
175
25
50
75
100
125
150
TC, CASE TEMPERATURE(oC)
175
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
Figure 1. Normalized Power Dissipation vs Case
Temperature
NORMALIZED THERMAL
IMPEDANCE, ZθJC
DUTY CYCLE - DESCENDING ORDER
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
0.1
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TC
SINGLE PULSE
0.01
-5
10
-4
10
-3
-2
-1
0
10
10
10
t, RECTANGULAR PULSE DURATION(s)
1
10
10
Figure 3. Normalized Maximum Transient Thermal Impedance
VGS = 10V
TC = 25oC
FOR TEMPERATURES
I DM, PEAK CURRENT (A)
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
175 - TC
I = I2
150
SINGLE PULSE
10
-5
10
-4
10
-3
-2
-1
10
10
10
t, RECTANGULAR PULSE DURATION(s)
0
10
1
10
Figure 4. Peak Current Capability
FCB20N60F_F085 Rev. C1
3
www.fairchildsemi.com
FCB20N60F_F085 N-Channel Power Trench® MOSFET
Typical Characteristics
100
10
1
LIMITED BY
PACKAGE
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(on)
0.01
1
1ms
SINGLE PULSE
TJ = MAX RATED
TC = 25oC
4
6
8
V GS , GATE TO SOURCE VOLTAGE (V)
VGS = 0 V
TJ = 175 oC
10
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Figure 8. Forward Diode Characteristics
100
I D, DRAIN CURRENT (A)
15V Top
10V
8V
7V
6.5V
6V
5.5V Bottom
10
6V
5.5V
80μs PULSE WIDTH
Tj=175C
1
0.1
1
1
10
V DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 9. Saturation Characteristics
VGS
15V Top
10V
8V
7V
6.5V
6V
5.5V Bottom
10
80μs PULSE WIDTH
Tj=25C
FCB20N60F_F085 Rev. C1
0.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
VGS
0.1
T J = 25 oC
10
0.001
0.0
Figure 7. Transfer Characteristics
I D, DRAIN CURRENT (A)
100
IS, REVERSE DRAIN CURRENT (A)
ID , DRAIN CURRENT (A)
TJ = 25oC
100
10
Figure 6. Unclamped Inductive Switching
Capability
T J = -55oC
2
1
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
TJ = 175oC
1
0.1
1000
PULSE DURATION = 80μ s
DUTY CYCLE = 0.5% MAX
VDD = 20V
10
0.01
tAV, TIME IN AVALANCHE (ms)
Figure 5. Forward Bias Safe Operating Area
100
STARTING TJ = 150oC
1
1E-3
10ms
DC
10
100
V DS, DRAIN TO SOURCE VOLTAGE (V)
STARTING TJ = 25oC
10
100us
0.1
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R ≠ 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
I AS, AVALANCHE CURRENT (A)
ID, DRAIN CURRENT (A)
100
1
10
V DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 10. Saturation Characteristics
4
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FCB20N60F_F085 N-Channel Power Trench® MOSFET
Typical Characteristics
ID = 20A
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
rDS(on) , DRAIN TO SOURCE
ON-RESISTANCE (mΩ)
1000
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
800
TJ = 175oC
600
400
TJ = 25o C
200
0
5
6
7
8
9
VGS, GATE TO SOURCE VOLTAGE (V)
2.0
1.6
1.2
ID = 20A
VGS = 10V
0.8
0.6
-80
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE(oC)
200
ID = 1mA
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
NORMALIZED GATE
THRESHOLD VOLTAGE
2.4
1.2
VGS = VDS
ID = 250μ A
1.0
1.1
0.8
1.0
0.6
0.9
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE(oC)
0.8
-80
200
10000
Ciss
1000
Coss
100
10
f = 1MHz
VGS = 0V
Crss
1
10
V DS, DRAIN TO SOURCE VOLTAGE (V)
40
Figure 15. Capacitance vs Drain to Source
Voltage
FCB20N60F_F085 Rev. C1
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE (oC)
200
Figure 14. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
V GS, GATE TO SOURCE VOLTAGE(V)
Figure 13. Normalized Gate Threshold Voltage vs
Temperature
CAPACITANCE (pF)
2.8
Figure 12. Normalized Rdson vs Junction
Temperature
1.2
1
0.1
PULSE DURATION = 80μ s
DUTY CYCLE = 0.5% MAX
3.2
10
Figure 11. Rdson vs Gate Voltage
0.4
-80
3.6
10
ID = 20A
V DD = 240V
8
VDD = 300V
6
VDD = 360V
4
2
0
0
20
40
60
Q g, GATE CHARGE(nC)
80
Figure 16. Gate Charge vs Gate to Source
Voltage
5
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FCB20N60F_F085 N-Channel Power Trench® MOSFET
Typical Characteristics
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Definition of Terms
Datasheet Identification
Product Status
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Definition
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I61
FCB20N60F_F085 Rev. C1
6
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