FDMS86200 N-Channel Power Trench® MOSFET 150 V, 49 A, 18 mΩ Features General Description Max rDS(on) = 18 mΩ at VGS = 10 V, ID = 9.6 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Max rDS(on) = 21 mΩ at VGS = 6 V, ID = 8.8 A Advanced Package and Silicon combination for low rDS(on) and high efficiency MSL1 robust package design Application 100% UIL tested DC-DC Conversion RoHS Compliant Bottom Top Pin 1 S D D D S S G D S D S D S D G D Power 56 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous TC = 25 °C -Continuous TA = 25 °C ID TJ, TSTG ±20 V (Note 1a) 9.6 A 100 Single Pulse Avalanche Energy PD Units V 49 -Pulsed EAS Ratings 150 (Note 3) Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C 220 104 (Note 1a) Operating and Storage Junction Temperature Range 2.5 -55 to +150 mJ W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient 1.2 (Note 1a) 50 °C/W Package Marking and Ordering Information Device Marking FDMS86200 Device FDMS86200 ©2012 Fairchild Semiconductor Corporation FDMS86200 Rev.C3 Package Power 56 1 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units www.fairchildsemi.com FDMS86200 N-Channel Power Trench® MOSFET November 2012 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 120 V, VGS = 0 V 1 μA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V 100 nA 4.0 V 150 V 110 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C -10 VGS = 10 V, ID = 9.6 A 15 rDS(on) Static Drain to Source On Resistance VGS = 6 V, ID = 8.8 A 17 21 VGS = 10 V, ID = 9.6 A, TJ = 125 °C 28 34 VDD = 10 V, ID = 9.6 A 33 gFS Forward Transconductance 2.0 2.5 mV/°C 18 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 75 V, VGS = 0 V, f = 1 MHz 2041 2715 pF 203 270 pF 10 16 pF 1.2 3 Ω Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg(TOT) VDD = 75 V, ID = 9.6 A, VGS = 10 V, RGEN = 6 Ω Total Gate Charge VGS = 0 V to 10 V Total Gate Charge VGS = 0 V to 5 V Qgs Total Gate Charge Qgd Gate to Drain “Miller” Charge VDD = 75 V ID = 9.6 A 13 23 ns 7.9 16 ns 27 44 ns 5.8 12 ns 33 46 nC 18 26 nC 7.9 nC 7.7 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 2 A (Note 2) 0.69 1.2 VGS = 0 V, IS = 9.6 A (Note 2) 0.77 1.3 76 120 ns 113 181 nC IF = 9.6 A, di/dt = 100 A/μs V NOTES: 1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. b.125 °C/W when mounted on a minimum pad of 2 oz copper a. 50 °C/W when mounted on a 1 in2 pad of 2 oz copper SS SF DS DF G SS SF DS DF G 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 %. 3. EAS of 220 mJ is based on starting TJ = 25 °C, L = 1 mH, IAS = 21 A, VDD = 150 V, VGS = 10 V. 100% test at L = 0.1 mH, IAS = 46 A. FDMS86200 Rev.C3 2 www.fairchildsemi.com FDMS86200 N-Channel Power Trench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted VGS = 10 V VGS = 5 V VGS = 6 V ID, DRAIN CURRENT (A) 80 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 60 40 4 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 100 VGS = 4.5 V 20 VGS = 4 V VGS = 4 V 3 VGS = 4.5 V VGS = 5 V 2 VGS = 6 V 1 0 0 0 1 2 3 4 0 5 20 40 Figure 1. On-Region Characteristics 100 50 rDS(on), DRAIN TO ID = 9.6 A VGS = 10 V 1.6 1.2 0.8 0.4 -75 -50 -25 0 25 50 75 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 80 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 2.4 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 40 ID = 9.6 A 30 TJ = 125 oC 20 TJ = 25 oC 10 100 125 150 2 TJ, JUNCTION TEMPERATURE (oC) 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On- Resistance vs Junction Temperature Figure 4. On-Resistance vs Gate to Source Voltage 100 100 IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 80 ID, DRAIN CURRENT (A) 60 ID, DRAIN CURRENT (A) VDS, DRAIN TO SOURCE VOLTAGE (V) 2.0 VGS = 10 V PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX VDS = 5 V 60 TJ = 150 oC 40 TJ = 25 oC 20 TJ = -55 oC 0 2 3 4 5 VGS = 0 V 10 TJ = 150 oC 1 TJ = 25 oC 0.1 0.01 TJ = -55 oC 0.001 0.0 6 0.2 0.4 0.6 0.8 1.0 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current FDMS86200 Rev.C3 3 1.2 www.fairchildsemi.com FDMS86200 N-Channel Power Trench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 5000 ID = 9.6 A VDD = 75 V 8 VDD = 50 V CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 VDD = 100 V 6 4 Ciss 1000 Coss 100 2 f = 1 MHz VGS = 0 V 10 0 5 10 15 20 25 30 35 1 Figure 7. Gate Charge Characteristics 100 Figure 8. Capacitance vs Drain to Source Voltage 60 ID, DRAIN CURRENT (A) 100 IAS, AVALANCHE CURRENT (A) 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) TJ = 25 oC 10 TJ = 100 oC 45 VGS = 10 V Limited by Package 30 VGS = 6 V 15 TJ = 125 oC o RθJC = 1.2 C/W 1 0.001 0.01 0.1 1 10 0 25 50 50 150 1000 P(PK), PEAK TRANSIENT POWER (W) 10 1 ms 1 10 ms THIS AREA IS LIMITED BY rDS(on) 100 ms 1s SINGLE PULSE TJ = MAX RATED 0.01 10 s DC RθJA = 125 oC/W TA = 25 oC 0.1 1 10 100 VGS = 10 V 1000 SINGLE PULSE RθJA = 125 oC/W TA = 25 oC 100 10 1 0.5 -3 10 -2 10 -1 10 1 10 100 1000 t, PULSE WIDTH (sec) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area FDMS86200 Rev.C3 125 Figure 10. Maximum Continuous Drain Current vs Case Temperature 300 100 0.001 0.01 100 o Figure 9. Unclamped Inductive Switching Capability 0.1 75 Tc, CASE TEMPERATURE ( C) tAV, TIME IN AVALANCHE (ms) ID, DRAIN CURRENT (A) Crss 5 0.1 0 Figure 12. Single Pulse Maximum Power Dissipation 4 www.fairchildsemi.com FDMS86200 N-Channel Power Trench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.01 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE o RθJA = 125 C/W 0.001 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Transient Thermal Response Curve FDMS86200 Rev.C3 5 www.fairchildsemi.com FDMS86200 N-Channel Power Trench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted FDMS86200 N-Channel Power Trench® MOSFET Dimensional Outline and Pad Layout FDMS86200 Rev.C3 6 www.fairchildsemi.com tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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I61 FDMS86200 Rev.C3 7 www.fairchildsemi.com FDMS86200 N-Channel Power Trench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 2Cool™ PowerTrench® The Power Franchise® F-PFS™ ® AccuPower™ PowerXS™ FRFET® AX-CAP™* Global Power ResourceSM Programmable Active Droop™ ® ® BitSiC Green Bridge™ QFET TinyBoost™ Green FPS™ Build it Now™ QS™ TinyBuck™ Green FPS™ e-Series™ CorePLUS™ Quiet Series™ TinyCalc™ Gmax™ CorePOWER™ RapidConfigure™ TinyLogic® GTO™ CROSSVOLT™ ™ TINYOPTO™ IntelliMAX™ CTL™ TinyPower™ ISOPLANAR™ Saving our world, 1mW/W/kW at a time™ Current Transfer Logic™ TinyPWM™ Marking Small Speakers Sound Louder SignalWise™ DEUXPEED® TinyWire™ and Better™ SmartMax™ Dual Cool™ TranSiC® MegaBuck™ SMART START™ EcoSPARK® TriFault Detect™ EfficentMax™ MICROCOUPLER™ Solutions for Your Success™ TRUECURRENT®* ESBC™ MicroFET™ SPM® μSerDes™ STEALTH™ MicroPak™ ® MicroPak2™ SuperFET® ® SuperSOT™-3 MillerDrive™ Fairchild UHC® SuperSOT™-6 MotionMax™ Fairchild Semiconductor® Ultra FRFET™ SuperSOT™-8 Motion-SPM™ FACT Quiet Series™ UniFET™ SupreMOS® mWSaver™ FACT® VCX™ OptoHiT™ SyncFET™ FAST® ® VisualMax™ Sync-Lock™ OPTOLOGIC FastvCore™ ® VoltagePlus™ ®* OPTOPLANAR FETBench™ XS™ FlashWriter® * ® FPS™