FAIRCHILD FDMS86200

FDMS86200
N-Channel Power Trench® MOSFET
150 V, 49 A, 18 mΩ
Features
General Description
„ Max rDS(on) = 18 mΩ at VGS = 10 V, ID = 9.6 A
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench® process that has
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.
„ Max rDS(on) = 21 mΩ at VGS = 6 V, ID = 8.8 A
„ Advanced Package and Silicon combination for low rDS(on)
and high efficiency
„ MSL1 robust package design
Application
„ 100% UIL tested
„ DC-DC Conversion
„ RoHS Compliant
Bottom
Top
Pin 1
S
D
D
D
S
S
G
D
S
D
S
D
S
D
G
D
Power 56
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
Drain to Source Voltage
Parameter
VGS
Gate to Source Voltage
Drain Current -Continuous
TC = 25 °C
-Continuous
TA = 25 °C
ID
TJ, TSTG
±20
V
(Note 1a)
9.6
A
100
Single Pulse Avalanche Energy
PD
Units
V
49
-Pulsed
EAS
Ratings
150
(Note 3)
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
220
104
(Note 1a)
Operating and Storage Junction Temperature Range
2.5
-55 to +150
mJ
W
°C
Thermal Characteristics
RθJC
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
1.2
(Note 1a)
50
°C/W
Package Marking and Ordering Information
Device Marking
FDMS86200
Device
FDMS86200
©2012 Fairchild Semiconductor Corporation
FDMS86200 Rev.C3
Package
Power 56
1
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
www.fairchildsemi.com
FDMS86200 N-Channel Power Trench® MOSFET
November 2012
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250 μA, VGS = 0 V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID = 250 μA, referenced to 25 °C
IDSS
Zero Gate Voltage Drain Current
VDS = 120 V, VGS = 0 V
1
μA
IGSS
Gate to Source Leakage Current
VGS = ±20 V, VDS = 0 V
100
nA
4.0
V
150
V
110
mV/°C
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 μA
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250 μA, referenced to 25 °C
-10
VGS = 10 V, ID = 9.6 A
15
rDS(on)
Static Drain to Source On Resistance
VGS = 6 V, ID = 8.8 A
17
21
VGS = 10 V, ID = 9.6 A, TJ = 125 °C
28
34
VDD = 10 V, ID = 9.6 A
33
gFS
Forward Transconductance
2.0
2.5
mV/°C
18
mΩ
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
VDS = 75 V, VGS = 0 V,
f = 1 MHz
2041
2715
pF
203
270
pF
10
16
pF
1.2
3
Ω
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Qg(TOT)
VDD = 75 V, ID = 9.6 A,
VGS = 10 V, RGEN = 6 Ω
Total Gate Charge
VGS = 0 V to 10 V
Total Gate Charge
VGS = 0 V to 5 V
Qgs
Total Gate Charge
Qgd
Gate to Drain “Miller” Charge
VDD = 75 V
ID = 9.6 A
13
23
ns
7.9
16
ns
27
44
ns
5.8
12
ns
33
46
nC
18
26
nC
7.9
nC
7.7
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 2 A
(Note 2)
0.69
1.2
VGS = 0 V, IS = 9.6 A
(Note 2)
0.77
1.3
76
120
ns
113
181
nC
IF = 9.6 A, di/dt = 100 A/μs
V
NOTES:
1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
b.125 °C/W when mounted on
a minimum pad of 2 oz copper
a. 50 °C/W when mounted on
a 1 in2 pad of 2 oz copper
SS
SF
DS
DF
G
SS
SF
DS
DF
G
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 %.
3. EAS of 220 mJ is based on starting TJ = 25 °C, L = 1 mH, IAS = 21 A, VDD = 150 V, VGS = 10 V. 100% test at L = 0.1 mH, IAS = 46 A.
FDMS86200 Rev.C3
2
www.fairchildsemi.com
FDMS86200 N-Channel Power Trench® MOSFET
Electrical Characteristics TJ = 25 °C unless otherwise noted
VGS = 10 V
VGS = 5 V
VGS = 6 V
ID, DRAIN CURRENT (A)
80
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
60
40
4
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
100
VGS = 4.5 V
20
VGS = 4 V
VGS = 4 V
3
VGS = 4.5 V
VGS = 5 V
2
VGS = 6 V
1
0
0
0
1
2
3
4
0
5
20
40
Figure 1. On-Region Characteristics
100
50
rDS(on), DRAIN TO
ID = 9.6 A
VGS = 10 V
1.6
1.2
0.8
0.4
-75
-50
-25
0
25
50
75
SOURCE ON-RESISTANCE (mΩ)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
80
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
2.4
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
40
ID = 9.6 A
30
TJ = 125 oC
20
TJ = 25 oC
10
100 125 150
2
TJ, JUNCTION TEMPERATURE (oC)
4
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On- Resistance
vs Junction Temperature
Figure 4. On-Resistance vs Gate to
Source Voltage
100
100
IS, REVERSE DRAIN CURRENT (A)
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
80
ID, DRAIN CURRENT (A)
60
ID, DRAIN CURRENT (A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
2.0
VGS = 10 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VDS = 5 V
60
TJ = 150
oC
40
TJ = 25 oC
20
TJ = -55 oC
0
2
3
4
5
VGS = 0 V
10
TJ = 150 oC
1
TJ = 25 oC
0.1
0.01
TJ = -55 oC
0.001
0.0
6
0.2
0.4
0.6
0.8
1.0
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
FDMS86200 Rev.C3
3
1.2
www.fairchildsemi.com
FDMS86200 N-Channel Power Trench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
5000
ID = 9.6 A
VDD = 75 V
8
VDD = 50 V
CAPACITANCE (pF)
VGS, GATE TO SOURCE VOLTAGE (V)
10
VDD = 100 V
6
4
Ciss
1000
Coss
100
2
f = 1 MHz
VGS = 0 V
10
0
5
10
15
20
25
30
35
1
Figure 7. Gate Charge Characteristics
100
Figure 8. Capacitance vs Drain
to Source Voltage
60
ID, DRAIN CURRENT (A)
100
IAS, AVALANCHE CURRENT (A)
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
TJ = 25 oC
10
TJ = 100 oC
45
VGS = 10 V
Limited by Package
30
VGS = 6 V
15
TJ = 125 oC
o
RθJC = 1.2 C/W
1
0.001
0.01
0.1
1
10
0
25
50
50
150
1000
P(PK), PEAK TRANSIENT POWER (W)
10
1 ms
1
10 ms
THIS AREA IS
LIMITED BY rDS(on)
100 ms
1s
SINGLE PULSE
TJ = MAX RATED
0.01
10 s
DC
RθJA = 125 oC/W
TA = 25 oC
0.1
1
10
100
VGS = 10 V
1000
SINGLE PULSE
RθJA = 125 oC/W
TA = 25 oC
100
10
1
0.5
-3
10
-2
10
-1
10
1
10
100
1000
t, PULSE WIDTH (sec)
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
FDMS86200 Rev.C3
125
Figure 10. Maximum Continuous Drain
Current vs Case Temperature
300
100
0.001
0.01
100
o
Figure 9. Unclamped Inductive
Switching Capability
0.1
75
Tc, CASE TEMPERATURE ( C)
tAV, TIME IN AVALANCHE (ms)
ID, DRAIN CURRENT (A)
Crss
5
0.1
0
Figure 12. Single Pulse Maximum
Power Dissipation
4
www.fairchildsemi.com
FDMS86200 N-Channel Power Trench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
2
NORMALIZED THERMAL
IMPEDANCE, ZθJA
1
0.1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
0.01
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
SINGLE PULSE
o
RθJA = 125 C/W
0.001
-3
10
-2
10
-1
10
1
10
100
1000
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Transient Thermal Response Curve
FDMS86200 Rev.C3
5
www.fairchildsemi.com
FDMS86200 N-Channel Power Trench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
FDMS86200 N-Channel Power Trench® MOSFET
Dimensional Outline and Pad Layout
FDMS86200 Rev.C3
6
www.fairchildsemi.com
tm
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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THEREIN, WHICH COVERS THESE PRODUCTS.
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As used here in:
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and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2.
A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
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effectiveness.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I61
FDMS86200 Rev.C3
7
www.fairchildsemi.com
FDMS86200 N-Channel Power Trench® MOSFET
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