FDP5500_F085 N-Channel UltraFET Power MOSFET 55V, 80A, 7mΩ Features Applications Typ rDS(on) = 5.1mΩ at VGS = 10V, ID = 80A DC Linear Mode Control Typ Qg(10) = 114nC at VGS = 10V Solenoid and Motor Control Simulation Models Switching Regulators -Temperature Compensated PSPICE and SABERTM Models Automotive Systems Peak Current vs Pulse Width Curve UIS Rating Curve Qualified to AEC Q101 RoHS Compliant Package Symbol D DRAIN (FLANGE) SOURCE DRAIN GATE G TO-220AB S ©2009 Fairchild Semiconductor Corporation FDP5500_F085 Rev. A 1 www.fairchildsemi.com FDP5500_F085 N-Channel UltraFET Power MOSFET April 2009 Symbol Drain to Source Voltage VDSS Parameter VDGR Drain to Gate Voltage (RGS = 20kΩ) VGS Gate to Source Voltage ID EAS PD Ratings 55 (Note 1) (Note 1) Drain Current Continuous (TC < 135oC, VGS = 10V) Units V 55 V ±20 V 80 Pulsed A See Figure 4 Single Pulse Avalanche Energy (Note 2) 860 mJ Power Dissipation 375 W Derate above 25oC 2.5 W/oC TJ, TSTG Operating and Storage Temperature -55 to + 175 TL Max. Lead Temp. for Soldering (at 1.6mm from case for 10sec) 300 Tpkg Max. Package Temp. for Soldering (Package Body for 10sec) 260 o C Thermal Characteristics RθJC Thermal Resistance Junction to Case 0.4 oC/W RθJA Thermal Resistance Junction to Ambient TO-220AB, 1in2 copper pad area 62 o C/W Package Marking and Ordering Information Device Marking FDP5500 Device FDP5500_F085 Package TO-220AB Reel Size Tube Tape Width N/A Quantity 50 units Electrical Characteristics TC = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units V Off Characteristics BVDSS Drain to Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current ID = 250µA, VGS = 0V 55 - - VDS = 50V, VGS = 0V - - 1 VDS = 45V - - 250 VGS = ±20V - - ±100 TC = 150oC µA nA On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250µA 2 2.8 4 V rDS(on) Drain to Source On Resistance ID = 80A, VGS= 10V - 5.1 7 mΩ VDS = 25V, VGS = 0V, f = 1MHz - 3565 - pF - 1310 - pF - 395 - pF - 207 269 nC - 114 148 nC - 6.6 8.6 nC - 17.2 - nC - 52 - nC Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg(TOT) Total Gate Charge at 20V VGS = 0 to 20V Qg(10) Total Gate Charge at 10V VGS = 0 to 10V Qg(TH) Threshold Gate Charge VGS = 0 to 2V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller“ Charge FDP5500_F085 Rev. A 2 VDD = 30V ID = 80A RL = 0.4Ω Ig = 1.0mA www.fairchildsemi.com FDP5500_F085 N-Channel UltraFET Power MOSFET MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Switching Characteristics ton Turn-On Time - - 75 ns td(on) Turn-On Delay Time - 12 - ns tr Rise Time td(off) Turn-Off Delay Time tf Fall Time toff Turn-Off Time VDD = 30V, ID = 80A, RL = 0.4Ω, VGS = 10V, RGS = 2.5Ω - 34 - ns - 37 - ns - 23 - ns - - 96 ns - 0.9 1.25 V - 58 75 ns - 71 92 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD = 80A IF = 80A, dISD/dt = 100A/µs Notes: 1: Starting TJ = 25oC to175oC. 2: Starting TJ = 25oC, L = 0.42mH, IAS = 64A This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. FDP5500_F085 Rev. A 3 www.fairchildsemi.com FDP5500_F085 N-Channel UltraFET Power MOSFET Electrical Characteristics TC = 25oC unless otherwise noted VGS = 10V 1.0 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER 160 1.2 0.8 0.6 0.4 0.2 0.0 0 25 50 75 100 125 150 TC, CASE TEMPERATURE(oC) 120 80 40 0 25 175 CURRENT LIMITED BY PACKAGE 50 75 100 125 150 175 TC, CASE TEMPERATURE(oC) Figure 2. Maximum Continuous Drain Current vs Case Temperature Figure 1. Normalized Power Dissipation vs Case Temperature NORMALIZED THERMAL IMPEDANCE, ZθJC 2 1 DUTY CYCLE - DESCENDING ORDER D = 0.50 0.20 0.10 0.05 0.02 0.01 0.1 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TC 0.01 -5 10 SINGLE PULSE -4 10 -3 -2 -1 10 10 10 t, RECTANGULAR PULSE DURATION(s) 1 10 Figure 3. Normalized Maximum Transient Thermal Impedance 10000 IDM, PEAK CURRENT (A) VGS = 10V TC = 25oC TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 1000 175 - TC I = I2 150 100 SINGLE PULSE 10 -5 10 -4 10 -3 -2 -1 10 10 10 t, RECTANGULAR PULSE DURATION(s) 1 10 Figure 4. Peak Current Capability FDP5500_F085 Rev. A 4 www.fairchildsemi.com FDP5500_F085 N-Channel UltraFET Power MOSFET Typical Characteristics 1000 100us 100 1ms 10 LIMITED BY PACKAGE 10ms DC 1 0.1 IAS, AVALANCHE CURRENT (A) ID, DRAIN CURRENT (A) 1000 OPERATION IN THIS SINGLE PULSE TJ = MAX RATED AREA MAY BE LIMITED BY rDS(on) T = 25oC C 1 10 100 VDS, DRAIN TO SOURCE VOLTAGE (V) If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R ≠ 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] 100 STARTING TJ = 25oC 10 STARTING TJ = 150oC 1 0.01 200 0.1 1 10 100 1000 5000 tAV, TIME IN AVALANCHE (ms) NOTE: Refer to Fairchild Application Notes AN7514 and AN7515 Figure 5. Forward Bias Safe Operating Area 160 160 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) Figure 6. Unclamped Inductive Switching Capability VDD = 5V 120 80 TJ = 175oC 40 TJ = -55oC VGS = 6V 120 VGS = 5.5V 80 VGS = 5V 40 TJ = 25oC 0 0 1 2 3 4 5 6 VGS, GATE TO SOURCE VOLTAGE (V) VGS = 4.5V 0 7 Figure 7. Transfer Characteristics NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID = 80A PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 30 20 TJ = 175oC 10 TJ = 25oC 0 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 9. Drain to Source On-Resistance Variation vs Gate to Source Voltage FDP5500_F085 Rev. A 0 1 2 3 4 VDS, DRAIN TO SOURCE VOLTAGE (V) 5 Figure 8. Saturation Characteristics 40 rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ) PULSE DURATION = 80µs VGS = 10V DUTY CYCLE = 0.5% MAX 2.2 2.0 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 1.8 1.6 1.4 1.2 1.0 0.8 0.6 -80 ID = 80A VGS = 10V -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 200 Figure 10. Normalized Drain to Source On Resistance vs Junction Temperature 5 www.fairchildsemi.com FDP5500_F085 N-Channel UltraFET Power MOSFET Typical Characteristics 1.15 NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE 1.2 NORMALIZED GATE THRESHOLD VOLTAGE VGS = VDS ID = 250µA 1.0 0.8 0.6 0.4 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 200 1000 Coss Crss 80 Figure 13. Capacitance vs Drain to Source Voltage FDP5500_F085 Rev. A 0.95 0.90 0.85 -80 VGS, GATE TO SOURCE VOLTAGE(V) CAPACITANCE (pF) Ciss 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 1.00 -40 0 40 80 120 160 200 Figure 12. Normalized Drain to Source Breakdown Voltage vs Junction Temperature 10000 100 0.1 1.05 TJ, JUNCTION TEMPERATURE (oC) Figure 11. Normalized Gate Threshold Voltage vs Junction Temperature f = 1MHz VGS = 0V ID = 1mA 1.10 10 ID = 80A 8 VDD = 20V 6 VDD = 30V VDD = 40V 4 2 0 0 20 40 60 80 100 Qg, GATE CHARGE(nC) 120 140 Figure 14. Gate Charge vs Gate to Source Voltage 6 www.fairchildsemi.com FDP5500_F085 N-Channel UltraFET Power MOSFET Typical Characteristics tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I40 FDP5500_F085 Rev. A 7 www.fairchildsemi.com FDP5500_F085 N-Channel UltraFET Power MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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