FAIRCHILD KSC1173

KSC1173
KSC1173
Low Frequency Power Amplifier
Power Regulator
• Collector Current : IC=3A
• Collector Dissipation : PC=10W (TC=25°C)
• Complement to KSA473
TO-220
1
1.Base
2.Collector
3.Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
BVCBO
Parameter
Collector-Base Voltage
Value
30
Units
V
BVCEO
Collector-Emitter Voltage
30
V
BVEBO
Emitter-Base Voltage
5
V
IC
Collector Current
3
A
PC
Collector Dissipation (TC=25°C)
10
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
- 55 ~ 150
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
BVCBO
Parameter
Collector-Base Breakdown Voltage
Test Condition
IC = 500µA, IE = 0
Min.
30
BVCEO
Collector-Emitter Breakdown Voltage
IC = 10mA IB = 0
30
BVEBO
Emitter-Base Breakdown Voltage
IE = -1mA, IC = 0
5
Typ.
Max.
Units
V
V
ICBO
Collector Cut-off Current
VCB = 20V, IE = 0
1.0
µA
IEBO
Emitter Cut-off Current
VEB = 5V, IC = 0
1.0
µA
hFE1
hFE2
DC Current Gain
VCE = 2V, IC = 0.5A
VCE = 2V, IC = 2.5A
70
25
240
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 2A, IB = 0.2A
0.3
0.8
V
VBE(on)
Base-Emitter ON Voltage
VCE = 2V, IC = 0.5A
0.75
1.0
V
fT
Current Gain Base Width Product
VCE = 2V, IC = 0.5A
100
MHz
Cob
Output Capacitance
VCB = 10V, IE =0,
f = 1MHz
35
pF
hFE Classification
Classification
O
Y
hFE1
70 ~ 140
120 ~ 240
©2000 Fairchild Semiconductor International
Rev. A, February 2000
KSC1173
Typical Characteristics
4.5
1000
VCE = 2V
IC[A], COLLECTOR CURRENT
4.0
hFE, DC CURRENT GAIN
3.5
IB = 40mA IB = 30mA
3.0
IB = 20mA
2.5
IB = 15mA
2.0
IB = 10mA
1.5
IB = 8mA
1.0
100
IB = 5mA
0.5
IB = 3mA
0.0
0.0
0.8
1.6
2.4
3.2
4.0
4.8
5.6
6.4
10
0.01
7.2
0.1
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
Figure 2. DC current Gain
10
4.5
VCE=2V
IC = 10 IB
1
IC(A), COLLECTOR CURRENT
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
1
V BE(sat)
0.1
VCE (sat)
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.01
0.01
0.1
0.0
0.0
1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
VBE(V), BASE-EMITTER VOLTAGE
IC[A], COLLECTOR CURRENT
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter On Voltage
100
10
IE=0
f=1MHz
Cob[pF], CAPACITANCE
IC[A], COLLECTOR CURRENT
IC MAX(Pulse)
10
10
VCB [V], COLLECTOR-BASE VOLTAGE
Figure 5. Collector Output Capacitance
©2000 Fairchild Semiconductor International
100
1ms
*50ms
Thermal
limitation
Tc=25℃
1
S/B Limitation
*Single Pulse
0.1
1
*10ms
IC MAX(DC)
1
10
100
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 6. Safe Operating Area
Rev. A, February 2000
KSC1173
Typical Characteristics (Continued)
16
PD[W], POWER DISSIPATION
14
12
10
8
6
4
2
0
0
25
50
75
100
125
150
175
o
TC[ C], CASE TEMPERATURE
Figure 7. Power Derating
©2000 Fairchild Semiconductor International
Rev. A, February 2000
KSC1173
Package Demensions
TO-220
4.50 ±0.20
2.80 ±0.10
(3.00)
+0.10
1.30 –0.05
18.95MAX.
(3.70)
ø3.60 ±0.10
15.90 ±0.20
1.30 ±0.10
(8.70)
(1.46)
9.20 ±0.20
(1.70)
9.90 ±0.20
1.52 ±0.10
0.80 ±0.10
2.54TYP
[2.54 ±0.20]
10.08 ±0.30
(1.00)
13.08 ±0.20
)
(45°
1.27 ±0.10
+0.10
0.50 –0.05
2.40 ±0.20
2.54TYP
[2.54 ±0.20]
10.00 ±0.20
Dimensions in Millimeters
©2000 Fairchild Semiconductor International
Rev. A, February 2000
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
E2CMOS™
FACT™
FACT Quiet Series™
FAST®
FASTr™
GTO™
HiSeC™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench®
QFET™
QS™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
VCX™
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PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
INTERNATIONAL.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2000 Fairchild Semiconductor International
Rev. E