FJP5555 NPN Silicon Transistor Features • • • • High Voltage Switch Mode Application Fast Speed Switching Wide Safe Operating Area Suitable for Electronic Ballast Application TO-220 1 1.Base Absolute Maximum Ratings Symbol 2.Collector 3.Emitter TA=25°C unless otherwise noted Parameter Value Units VCBO Collector-Base Voltage 1050 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 14 V IC Collector Current (DC) 5 A ICP Collector Current (Pulse) 10 A PC Collector Dissipation 75 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 to +150 °C Electrical Characteristics Symbol TA=25°C unless otherwise noted Parameter Conditions Min. Typ. Max. Units BVCBO Collector-Base Voltage IC=500μA, IE=0 1050 V BVCEO Collector-Emitter Voltage IC=5mA, IB=0 400 V BVEBO Emitter-Base Voltage IE=500μA, IC=0 14 V *DC Current Gain VCE=5V, IC=10mA VCE=3V, IC=0.8A 10 20 hFE VCE(sat) VBE(sat) Base-Emitter Saturation Voltage IC=3.5A, IB=1.0A Output Capacitance VCB=10V, f=1MHz tON Turn On Time tSTG Storage Time Fall Time tON Turn On Time tSTG Storage Time tF EAS 0.5 1.5 Collector-Emitter Saturation Voltage IC=1A, IB=0.2A IC=3.5A, IB=1.0A Cob tF 40 Fall Time Avalanche Energy 1.2 45 VCC=125V, IC=0.5A IB1=45mA, IB2=0.5A RL=250Ω VCC=250V, IC=2.5A IB1=0.5A, IB2=1.0A RL=100Ω L= 2mH 6 V V V pF 1.0 μs 1.2 μs 0.3 μs 2.0 μs 2.5 μs 0.3 μs mJ * Pulse Test: Pulse Width≤300μs, Duty Cycle≤2% © 2009 Fairchild Semiconductor Corporation FJP5555 Rev. B0 www.fairchildsemi.com 1 FJP5555 — NPN Silicon Transistor January 2010 5.0 100 o Ta = 75 C 4.5 VCE = 5V o IC [A], COLLECTOR CURRENT Ta = 125 C 4.0 hFE, DC CURRENT GAIN IB = 600mA 3.5 3.0 IB = 200mA 2.5 2.0 IB = 100mA 1.5 1.0 o Ta = 25 C o Ta = - 25 C 10 0.5 0.0 0 1 2 3 4 5 6 7 8 1 1E-3 9 0.01 VCE [V], COLLECTOR-EMITTER VOLTAGE 0.1 1 10 IC [A], COLLECTOR CURRENT Figure 1. Static Characteristics Figure 2. DC Current Gain 10 10 o Ta = 125 C o Ta = 75 C 1 o Ta = - 25 C o Ta = 25 C 0.1 0.01 0.01 0.1 1 IC = 5 IB VBE(sat) [V], SATURATION VOLTAGE VCE(sat) [V], SATURATION VOLTAGE IC = 5 IB o 1 o Ta = - 25 C o Ta = 125 C o Ta = 75 C 0.1 0.01 0.01 10 Ta = 25 C 0.1 1 Figure 3. Saturation Voltage Figure 4. Saturation Voltage tSTG & tF [us], SWITCHING TIME tSTG & tF [us], SWITCHING TIME 1 tSTG 0.1 tF VCC=125V tSTG 1 tF 0.1 VCC=250V IB1=45mA, IB2=0.5A 0.01 0.1 IB1=0.5A, IB2=1.0A 0.01 0.1 1 IC [A], COLLECTOR CURRENT 1 10 IC [A], COLLECTOR CURRENT Figure 5. Resistive Load Switching Figure 6. Resistive Load Switching © 2009 Fairchild Semiconductor Corporation FJP5555 Rev. B0 10 IC [A], COLLECTOR CURRENT IC [A], COLLECTOR CURRENT www.fairchildsemi.com 2 FJP5555 — NPN Silicon Transistor Typical Characteristics (Continued) 100 PC[W], POWER DISSIPATION IC [A], COLLECTOR CURRENT 90 10 VCC=50V, L=1mH 80 70 60 50 40 30 20 10 IB1=3A, RB2=0 0 1 10 100 0 1000 VCE [V], COLLECTOR-EMITTER VOLTAGE 25 50 75 100 125 150 175 o Tc[ C], CASE TEMPERATURE Figure 7. Reverse Biased Safe Operating Area Figure 8. Power Derating IC[A], COLLECTOR CURRENT 100 ICP(max) 10 100ms 10ms DC IC(max) 1 0.1 o Tc=25 C Single Pulse 0.01 1 10 100 1000 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 9. Forward Biased Safe Operating Area © 2009 Fairchild Semiconductor Corporation FJP5555 Rev. B0 www.fairchildsemi.com 3 FJP5555 — NPN Silicon Transistor Typical Characteristics FJP5555 — NPN Silicon Transistor Physical Dimensions TO-220 Dimensions in Millimeters © 2009 Fairchild Semiconductor Corporation FJP5555 Rev. 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Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I41 © 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com