FAIRCHILD BC559BTA

BC556/557/558/559/560
PNP Epitaxial Silicon Transistor
Features
• Switching and Amplifier
• High Voltage: BC556, VCEO = -65V
• Low Noise: BC559, BC560
• Complement to BC546 ... BC 550
TO-92
1
1. Collector 2. Base 3. Emitter
Absolute Maximum Ratings
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ
TSTG
Parameter
Collector-Base Voltage
: BC556
: BC557/560
: BC558/559
Collector-Emitter Voltage
: BC556
: BC557/560
: BC558/559
Emitter-Base Voltage
Collector Current (DC)
Collector Power Dissipation
Junction Temperature
Storage Temperature
Electrical Characteristics
Symbol
ICBO
hFE
VCE(sat)
Ta = 25°C unless otherwise noted
Value
Units
-80
-50
-30
V
V
V
-65
-45
-30
-5
-100
500
150
-65 ~ 150
V
V
V
V
mA
mW
C
C
Ta = 25C unless otherwise noted
Parameter
Test Condition
VBE(sat)
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Collector-Base Saturation Voltage
VBE(on)
Base-Emitter On Voltage
fT
Current Gain Bandwidth Product
Cob
NF
Output Capacitance
Noise Figure : BC556/557/558
: BC559/560
: BC559
: BC560
VCB= -30V, IE=0
VCE= -5V, IC=2mA
IC= -10mA, IB= -0.5mA
IC= -100mA, IB= -5mA
IC= -10mA, IB= -0.5mA
IC= -100mA, IB= -5mA
VCE= -5V, IC= -2mA
VCE= -5V, IC= -10mA
VCE= -5V, IC= -10mA,
f=10MHz
VCB= -10V, IE=0, f=1MHz
VCE= -5V, IC= -200A
f=1KHz, RG=2K
VCE= -5V, IC= -200A
RG=2Kf=30~15000MHz
Min.
Typ.
110
-600
-90
-250
-700
-900
-660
Max.
Units
-15
800
-300
-650
nA
-750
-800
150
2
1
1.2
1.2
6
10
4
4
2
mV
mV
mV
mV
mV
mV
MHz
pF
dB
dB
dB
dB
hFE Classification
Classification
hFE
A
110 ~ 220
B
200 ~ 450
© 2012 Fairchild Semiconductor Corporation
BC556/557/558/559/560 Rev. B0
C
420 ~ 800
www.fairchildsemi.com
1
BC556/557/558/559/560 — PNP Epitaxial Silicon Transistor
October 2012
1000
-50
IB = -400A
VCE = -5V
IB = -350A
-40
IB = -300A
-35
hFE, DC CURRENT GAIN
IC[mA], COLLECTOR CURRENT
-45
IB = -250A
-30
IB = -200A
-25
-20
IB = -150A
-15
IB = -100A
-10
100
10
IB = -50A
-5
1
-0.1
-0
-2
-4
-6
-8
-10
-12
-14
-16
-18
-20
-1
VCE[V], COLLECTOR-EMITTER VOLTAGE
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
-100
IC[mA], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
-100
-10
VBE(sat)
-1
VCE = -5V
IC[mA], COLLECTOR CURRENT
IC = -10 IB
-0.1
VCE(sat)
-10
-1
-0.1
-0.01
-0.1
-1
-10
-0.2
-100
-0.4
f=1MHz
IE = 0
1
-1
-10
-100
-1.0
-1.2
1000
VCE = -5V
100
10
-1
-10
IC[mA], COLLECTOR CURRENT
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 5. Collector Output Capacitance
Figure 6. Current Gain Bandwidth Product
© 2012 Fairchild Semiconductor Corporation
BC556/557/558/559/560 Rev. B0
-0.8
Figure 4. Base-Emitter On Voltage
fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
10
-0.6
VBE[V], BASE-EMITTER VOLTAGE
IC[mA], COLLECTOR CURRENT
Cob(pF), CAPACITANCE
-10
www.fairchildsemi.com
2
BC556/557/558/559/560 — PNP Epitaxial Silicon Transistor
Typical Performance Characteristics
BC556/557/558/559/560 — PNP Epitaxial Silicon Transistor
Physical Dimensions
TO-92
D
Dimensions in Millimeters
© 2012 Fairchild Semiconductor Corporation
BC556/557/558/559/560 Rev. B0
www.fairchildsemi.com
3
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Product Status
Advance Information
Formative / In Design
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
Definition
Datasheet contains the design specifications for product development. Specifications may change
in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
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The datasheet is for reference information only.
Rev. I62
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