MJD31/31C NPN Epitaxial Silicon Transistor Features • • • • • General Purpose Amplifier Low Speed Switching Applications Load Formed for Surface Mount Application (No Suffix) Straight Lead (I-PAK, “- I” Suffix) Electrically Similar to Popular TIP31 and TIP31C D-PAK 1 1.Base Absolute Maximum Ratings VCEO 2.Collector I-PAK 3.Emitter Ta = 25°C unless otherwise noted Symbol VCBO 1 Value Units Collector-Base Voltage : MJD31 : MJD31C Parameter 40 100 V V Collector-Emitter Voltage : MJD31 : MJD31C 40 100 V V 5 V VEBO Emitter-Base Voltage IC Collector Current (DC) 3 A ICP Collector Current (Pulse) 1 A IB Base Current 1 A PC Collector Dissipation (TC = 25°C) 15 W Collector Dissipation (Ta = 25°C) 1.56 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 65 to 150 °C Ordering Information Part Number Marking Package Packing Method MJD31CTF MJD31C D-PAK Tape & Reel MJD31CITU MJD31C-I I-PAK Tube © 2012 Fairchild Semiconductor Corporation MJD31/31C Rev. A4 Remarks www.fairchildsemi.com 1 MJD31/31C — NPN Epitaxial Silicon Transistor February 2012 Ta = 25°C unless otherwise noted Symbol Parameter VCEO(sus) * Collector-Emitter Sustaining Voltage : MJD31 : MJD31C IC = 30mA, IB = 0 IC = 30mA, IB = 0 Collector Cut-off Current : MJD31 : MJD31C VCE = 40V, IB = 0 VCE = 60V, IB = 0 50 50 μA μA Collector Cut-off Current : MJD31 : MJD31C VCE = 40V, VBE = 0 VCE = 100V, VBE = 0 20 20 μA μA 1 mA ICEO ICES Test Condition IEBO Emitter Cut-off Current VBE = 5V, IC = 0 hFE * DC Current Gain VCE = 4V, IC = 1A VCE = 4V, IC = 3A Min. Max. 40 100 25 10 Units V V 50 VCE(sat) * Collector-Emitter Saturation Voltage IC = 3A, IB = 375mA 1.2 V VBE(on) * Base-Emitter On Voltage VCE = 4A, IC = 3A 1.8 V Current Gain Bandwidth Product VCE = 10V, IC = 500mA fT 3 MHz * Pulse Test: PW≤300μs, Duty Cycle≤2% © 2012 Fairchild Semiconductor Corporation MJD31/31C Rev. A4 www.fairchildsemi.com 2 MJD31/31C — NPN Epitaxial Silicon Transistor Electrical Characteristics VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 1000 hFE, DC CURRENT GAIN VCE = 2V 100 10 1 0.01 0.1 1 10 IC = 10 IB 1 VBE(sat) 0.1 VCE(sat) 0.01 1E-3 10 0.01 IC[A], COLLECTOR CURRENT 0.1 1 10 IC[A], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 1000 tR, tD [μs], TURN ON TIME Cob[pF], CAPACITANCE tC = 10.IB 100 10 1 tR, VCC=30V tR, VCC=10V 0.1 tD, VBE(off)=2V 1 0.1 1 10 100 0.01 0.1 VCB[V], COLLECTOR BASE VOLTAGE 1 10 IC[A], COLLECTOR CURRENT Figure 3. Collector Capacitance Figure 4. Turn On Time 10 tF, VCC=30V tF, VCC(off)=10V 0.1 0.01 0.1 1 DC 0.1 0.01 10 1 10 100 1000 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT Figure 5. Turn Off Time Figure 6. Safe Operating © 2012 Fairchild Semiconductor Corporation MJD31/31C Rev. A4 1 MJD31C 1 IC(max) MJD31 tSTG s 0μ 10 s 0μ 50 IC[A], COLLECTOR CURRENT ICP(max) s 1m tF,tSTG[μs], TURN OFF TIME tC = 10.IB www.fairchildsemi.com 3 MJD31/31C — NPN Epitaxial Silicon Transistor Typical Performance Characteristics MJD31/31C — NPN Epitaxial Silicon Transistor Typical Performance Characteristics (Continued) PC[W], POWER DISSIPATION 20 15 10 5 0 0 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 7. Power Derating © 2012 Fairchild Semiconductor Corporation MJD31/31C Rev. A4 www.fairchildsemi.com 4 MJD31/31C — NPN Epitaxial Silicon Transistor Physical Dimensions D-PAK Dimensions in Millimeters © 2012 Fairchild Semiconductor Corporation MJD31/31C Rev. A4 www.fairchildsemi.com 5 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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