_ RURD620CCS9A_F085 August 2011 Data Sheet 6A, 200V Ultrafast Dual Diodes Features The RURD620CCS9A_F085 are ultrafast dual diodes with soft recovery characteristics (trr < 25ns). They have low forward voltage drop and are silicon nitride passivated ion-implanted epitaxial planar construction. • Operating Temperature . . . . . . . . . . . . . . . . . . . . . . 175oC These devices are intended for use as freewheeling/clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications. Their low stored charge and ultrafast soft recovery minimize ringing and electrical noise in many power switching circuits, thus reducing power loss in the switching transistors. • Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . . . <25ns • Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V • Avalanche Energy Rated • Planar Construction • Qualified to AEC Q101 • RoHS Compliant Applications • Switching Power Supplies • Power Switching Circuits Ordering Information PART NUMBER RURD620CCS9A_F085 • General Purpose PACKAGE BRAND TO-252AA UR620C Packaging NOTE: When ordering, use the entire part number. Add the suffix, 9A, to obtain the TO-252 variant in tape and reel, i.e., RURD620CCS9A. JEDEC TO-251AA ANODE 1 CATHODE ANODE 2 CATHODE (FLANGE) Symbol K JEDEC TO-252AA A1 A2 CATHODE (FLANGE) ANODE 2 ANODE 1 Absolute Maximum Ratings (Per Leg) TC = 25oC Unless Otherwise Specified RURD620CCS9A_F085 UNITS Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRRM 200 V Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRWM 200 V DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VR 200 V Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IF(AV) TC = 160oC 6 A Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFRM Square Wave, 20kHz 12 A Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM Halfwave, 1 phase, 60Hz 60 A Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD 45 W Avalanche Energy (See Figures 10 and 11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAVL 10 mJ Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TSTG,TJ -65 to 175 oC ©2011 Fairchild Semiconductor Corporation RURD620CCS9A_F085 Rev. C1 RURD620CCS9A_F085 Electrical Specifications (Per Leg) TC = 25oC, Unless Otherwise Specified SYMBOL TEST CONDITION MIN TYP MAX UNITS IF = 6A - - 1.0 V IF = 6A, TC = 150oC - - 0.83 V VR = 200V - - 100 µA VR = 200V, TC = 150oC - - 500 µA IF = 1A, dIF/dt = 200A/µs - - 25 ns IF = 6A, dIF/dt = 200A/µs - - 30 ns ta IF = 6A, dIF/dt = 200A/µs - 13 - ns tb IF = 6A, dIF/dt = 200A/µs - 6.5 - ns QRR IF = 6A, dIF/dt = 200A/µs - 20 - nC VR = 10V, IF = 0A - 30 - pf - - 3.5 oC/W VF IR trr CJ RθJC DEFINITIONS VF = Instantaneous forward voltage (pw = 300µs, D = 2%). IR = Instantaneous reverse current. trr = Reverse recovery time (See Figure 9), summation of ta + tb. ta = Time to reach peak reverse current (See Figure 9). tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 9). QRR = Reverse recovery charge. CJ = Junction Capacitance. RθJC = Thermal resistance junction to case. pw = Pulse width. D = Duty cycle. Typical Performance Curves 100 IR , REVERSE CURRENT (µA) IF , FORWARD CURRENT (A) 30 10 175oC 100oC 25oC 1 0.5 0 0.25 0.5 0.75 1 1.25 1.5 VF , FORWARD VOLTAGE (V) FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE ©2011 Fairchild Semiconductor Corporation 175oC 10 100oC 1 0.1 0.01 0.001 25oC 0 50 100 150 200 VR , REVERSE VOLTAGE (V) FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE RURD620CCS9A_F085 Rev. C1 RURD620CCS9A_F085 Typical Performance Curves (Continued) 40 20 TC = 100oC, dIF/dt = 200A/µs 16 t, RECOVERY TIMES (ns) t, RECOVERY TIMES (ns) trr ta 12 8 tb 4 32 trr 24 ta 16 tb 8 TC = 25oC, dIF/dt = 200A/µs 0 0.5 0 0.5 6 1 1 I F , FORWARD CURRENT (A) FIGURE 3. trr, ta AND tb CURVES vs FORWARD CURRENT FIGURE 4. trr , ta AND tb CURVES vs FORWARD CURRENT IF(AV), AVERAGE FORWARD CURRENT (A) 60 TC = 175oC, dIF/dt = 200A/µs t, RECOVERY TIMES (ns) 50 trr 40 ta 30 20 tb 10 0 0.5 6 I F, FORWARD CURRENT (A) 1 6 6 5 DC 4 SQUARE WAVE 3 2 1 0 150 160 155 165 170 175 TC , CASE TEMPERATURE (oC) I F, FORWARD CURRENT (A) FIGURE 5. trr, ta AND tb CURVES vs FORWARD CURRENT FIGURE 6. CURRENT DERATING CURVE CJ , JUNCTION CAPACITANCE (pF) 50 40 30 20 10 0 0 50 100 150 200 VR , REVERSE VOLTAGE (V) FIGURE 7. JUNCTION CAPACITANCE vs REVERSE VOLTAGE ©2011 Fairchild Semiconductor Corporation RURD620CCS9A_F085 Rev. C1 RURD620CCS9A_F085 Test Circuits and Waveforms VGE AMPLITUDE AND RG CONTROL dIF/dt t1 AND t2 CONTROL IF L DUT CURRENT SENSE RG IF + VGE - IGBT t1 VDD dIF trr dt ta tb 0 0.25 IRM t2 IRM FIGURE 8. trr TEST CIRCUIT FIGURE 9. trr WAVEFORMS AND DEFINITIONS I = 1A L = 20mH R < 0.1Ω EAVL = 1/2LI2 [VR(AVL) /(VR(AVL) - VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) VAVL L CURRENT SENSE R + VDD IL IL I V Q1 VDD DUT t0 FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT ©2011 Fairchild Semiconductor Corporation t1 t2 t FIGURE 11. AVALANCHE CURRENT AND VOLTAGE WAVEFORMS RURD620CCS9A_F085 Rev. C1 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. PDP SPM™ FlashWriter® * 2Cool™ The Power Franchise® The Right Technology for Your Success™ FPS™ Power-SPM™ AccuPower™ ® F-PFS™ PowerTrench® Auto-SPM™ ® PowerXS™ FRFET AX-CAP™* ® SM Global Power Resource Programmable Active Droop™ BitSiC TinyBoost™ Build it Now™ Green FPS™ QFET® TinyBuck™ CorePLUS™ Green FPS™ e-Series™ QS™ TinyCalc™ CorePOWER™ Gmax™ Quiet Series™ TinyLogic® CROSSVOLT™ GTO™ RapidConfigure™ TINYOPTO™ CTL™ IntelliMAX™ ™ TinyPower™ Current Transfer Logic™ ISOPLANAR™ TinyPWM™ Saving our world, 1mW/W/kW at a time™ DEUXPEED® MegaBuck™ TinyWire™ Dual Cool™ SignalWise™ MICROCOUPLER™ TranSiC® EcoSPARK® SmartMax™ MicroFET™ TriFault Detect™ EfficentMax™ SMART START™ MicroPak™ TRUECURRENT®* ESBC™ SPM® MicroPak2™ μSerDes™ STEALTH™ MillerDrive™ ® SuperFET® MotionMax™ SuperSOT™-3 Motion-SPM™ Fairchild® UHC® SuperSOT™-6 mWSaver™ Fairchild Semiconductor® Ultra FRFET™ SuperSOT™-8 OptiHiT™ FACT Quiet Series™ UniFET™ SupreMOS® OPTOLOGIC® FACT® VCX™ OPTOPLANAR® SyncFET™ FAST® ® VisualMax™ Sync-Lock™ FastvCore™ XS™ ®* FETBench™ tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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