ISL9R3060G2, ISL9R3060P2 30A, 600V Stealth™ Diode General Description Features • Soft Recovery . . . . . . . . . . . . . . . . . . . . . . . . tb / ta > 1.2 The ISL9R3060G2 and ISL9R3060P2 are Stealth™ diodes optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current (IRRM) and exceptionally soft recovery under typical operating conditions. This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low IRRM and short ta phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. Consider using the Stealth™ diode with an SMPS IGBT to provide the most efficient and highest power density design at lower cost. Formerly developmental type TA49411. • Fast Recovery . . . . . . . . . . . . . . . . . . . . . . . . . trr < 35ns • Operating Temperature . . . . . . . . . . . . . . . . . . . . 175oC • Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . 600V • Avalanche Energy Rated Applications • Switch Mode Power Supplies • Hard Switched PFC Boost Diode • UPS Free Wheeling Diode • Motor Drive FWD • SMPS FWD • Snubber Diode Package Symbol CATHODE (FLANGE) JEDEC STYLE 2 LEAD TO-247 JEDEC TO-220AC ANODE K CATHODE CATHODE (BOTTOM SIDE METAL) A CATHODE ANODE Device Maximum Ratings TC= 25°C unless otherwise noted Symbol VRRM Parameter Peak Repetitive Reverse Voltage Ratings 600 Units V Working Peak Reverse Voltage 600 V DC Blocking Voltage 600 V IF(AV) Average Rectified Forward Current 30 A IFRM Repetitive Peak Surge Current (20kHz Square Wave) 70 A IFSM Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz) 325 A Power Dissipation 200 W Avalanche Energy (1A, 40mH) 20 mJ -55 to 175 °C 300 260 °C °C VRWM VR PD EAVL TJ, TSTG TL TPKG Operating and Storage Temperature Range Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s Package Body for 10s, See Techbrief TB334 CAUTION: Stresses above those listed in “Device Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. ©2011 Fairchild Semiconductor Corporation ISL9R3060G2, ISL9R3060P2 Rev. C4 ISL9R3060G2, ISL9R3060P2 May 2011 Device Marking R3060G2 Device ISL9R3060G2 Package TO-247 Tape Width - Quantity - R3060P2 ISL9R3060P2 TO-220AC - - Electrical Characteristics TC = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off State Characteristics IR Instantaneous Reverse Current TC = 25°C - - 100 µA TC = 125°C - - 1.0 mA TC = 25°C - 2.1 2.4 V TC = 125°C - 1.7 2.1 V VR = 10V, IF = 0A - 120 - pF IF = 1A, dIF/dt = 100A/µs, VR = 30V - 27 35 ns IF = 30A, dIF/dt = 100A/µs, VR = 30V - 36 45 ns IF = 30A, dIF/dt = 200A/µs, VR = 390V, TC = 25°C - 36 - ns VR = 600V On State Characteristics VF Instantaneous Forward Voltage IF = 30A Dynamic Characteristics CJ Junction Capacitance Switching Characteristics trr trr Reverse Recovery Time Reverse Recovery Time IRRM Maximum Reverse Recovery Current QRR Reverse Recovery Charge trr Reverse Recovery Time S Softness Factor (tb/ta) IRRM Maximum Reverse Recovery Current QRR Reverse Recovery Charge trr Reverse Recovery Time S Softness Factor (tb/ta) IRRM Maximum Reverse Recovery Current QRR Reverse Recovery Charge dIM/dt IF = 30A, dIF/dt = 200A/µs, VR = 390V, TC = 125°C IF = 30A, dIF/dt = 1000A/µs, VR = 390V, TC = 125°C Maximum di/dt during tb - 2.9 - A - 55 - nC - 110 - ns - 1.9 - - 6 - A - 450 - nC ns - 60 - - 1.25 - - 21 - A 730 - nC 800 - A/µs Thermal Characteristics RθJC Thermal Resistance Junction to Case - - 0.75 °C/W RθJA Thermal Resistance Junction to Ambient TO-247 - - 30 °C/W RθJA Thermal Resistance Junction to Ambient TO-220 - - 62 °C/W ©2011 Fairchild Semiconductor Corporation ISL9R3060G2, ISL9R3060P2 Rev. C4 ISL9R3060G2, ISL9R3060P2 Package Marking and Ordering Information 60 5000 175oC 175oC 1000 25oC 150oC IR, REVERSE CURRENT (µA) IF, FORWARD CURRENT (A) 50 40 125oC 30 20 100oC 10 0 0 0.5 1.0 1.5 2.0 2.5 150oC 125oC 100 100oC 75oC 10 1 25oC 0.1 100 3.0 200 VF, FORWARD VOLTAGE (V) Figure 1. Forward Current vs Forward Voltage 100 100 t, RECOVERY TIMES (ns) t, RECOVERY TIMES (ns) 600 VR = 390V, TJ = 125°C 70 60 50 40 30 20 tb AT IF = 60A, 30A, 15A 80 60 40 20 10 ta AT dIF/dt = 200A/µs, 500A/µs, 800A/µs 0 10 20 30 40 50 ta AT IF = 60A, 30A, 15A 0 200 60 400 600 800 1000 1200 1400 dIF /dt, CURRENT RATE OF CHANGE (A/µs) IF, FORWARD CURRENT (A) Figure 3. ta and tb Curves vs Forward Current 20 VR = 390V, TJ = 125°C dIF/dt = 800A/µs 18 16 14 dIF/dt = 500A/µs 12 10 8 dIF/dt = 200A/µs 6 0 10 20 30 40 50 60 IF, FORWARD CURRENT (A) Figure 5. Maximum Reverse Recovery Current vs Forward Current ©2011 Fairchild Semiconductor Corporation 1600 Figure 4. ta and tb Curves vs dIF/dt IRRM , MAX REVERSE RECOVERY CURRENT (A) IRRM , MAX REVERSE RECOVERY CURRENT (A) 500 120 VR = 390V, TJ = 125°C 80 4 400 Figure 2. Reverse Current vs Reverse Voltage 90 tb AT dIF/dt = 200A/µs, 500A/µs, 800A/µs 0 300 VR , REVERSE VOLTAGE (V) 30 IF = 60A VR = 390V, TJ = 125°C 25 IF = 30A IF = 15A 20 15 10 5 0 200 400 600 800 1000 1200 1400 1600 dIF /dt, CURRENT RATE OF CHANGE (A/µs) Figure 6. Maximum Reverse Recovery Current vs dIF/dt ISL9R3060G2, ISL9R3060P2 Rev. C4 ISL9R3060G2, ISL9R3060P2 Typical Performance Curves 1200 VR = 390V, TJ = 125°C IF = 60A QRR, REVERSE RECOVERY CHARGE (nC) S, REVERSE RECOVERY SOFTNESS FACTOR 2.5 IF = 30A 2.0 1.5 IF = 15A 1.0 0.5 200 400 600 800 1000 1200 1400 VR = 390V, TJ = 125°C 1000 IF = 30A 800 600 IF = 15A 400 200 200 1600 Figure 7. Reverse Recovery Softness Factor vs dIF/dt 600 1000 1200 1400 1600 90 Average Forward Current, I F(AV) (A) 800 600 400 200 0 0.1 1 10 100 75 60 45 30 15 0 25 50 VR , REVERSE VOLTAGE (V) 1.0 75 100 125 150 175 Case temperature, T C (o C ) Figure 9. Junction Capacitance vs Reverse Voltage THERMAL IMPEDANCE 800 Figure 8. Reverse Recovery Charge vs dIF/dt 1000 CJ , JUNCTION CAPACITANCE (pF) 400 dIF /dt, CURRENT RATE OF CHANGE (A/µs) dIF/dt, CURRENT RATE OF CHANGE (A/µs) ZθJA, NORMALIZED IF = 60A Figure 10. Forward Current Derating Curve DUTY CYCLE - DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.1 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 SINGLE PULSE 0.01 10-5 10-4 PEAK TJ = PDM x ZθJA x RθJA + TA 10-3 10-2 10-1 t, RECTANGULAR PULSE DURATION (s) 100 101 Figure 11. Normalized Maximum Transient Thermal Impedance ©2011 Fairchild Semiconductor Corporation ISL9R3060G2, ISL9R3060P2 Rev. C3 ISL9R3060G2, ISL9R3060P2 Typical Performance Curves (Continued) VGE AMPLITUDE AND RG CONTROL dIF/dt t1 AND t2 CONTROL IF L IF DUT RG CURRENT SENSE dIF trr dt ta tb 0 + 0.25 IRM VDD VGE - MOSFET t1 IRM t2 Figure 11. trr Test Circuit Figure 12. trr Waveforms and Definitions I = 1A L = 40mH R < 0.1Ω VDD = 50V EAVL = 1/2LI2 [VR(AVL) /(VR(AVL) - VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) L CURRENT SENSE VAVL R + VDD Q1 VDD DUT IL t0 Figure 13. Avalanche Energy Test Circuit ©2011 Fairchild Semiconductor Corporation IL I V t1 t2 t Figure 14. Avalanche Current and Voltage Waveforms ISL9R3060G2, ISL9R3060P2 Rev. C4 ISL9R3060G2, ISL9R3060P2 Test Circuit and Waveforms tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I54 ©2011 Fairchild Semiconductor Corporation ISL9R3060G2, ISL9R3060P2 Rev. 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