Features • No External Components Except PIN Diode • Supply-voltage Range: 2.7V to 5.5V • High Sensitivity Due to Automatic Sensitivity Adaption (AGC) and Automatic Strong Signal Adaption (ATC) Automatic Supply Voltage Adaptation High Immunity against Disturbances from Daylight and Lamps Small Size and Innovative Pad Layout Available for Carrier Frequencies between 33 kHz to 40 kHz and 56 kHz; Adjusted by Zener Diode Fusing ±2.5% • TTL and CMOS Compatible • • • • Applications • Home Entertainment Applications • Home Appliances • Remote Control Equipment Low-voltage IR Receiver ASSP ATA2526 1. Description The IC ATA2526 is a complete IR receiver for data communication that has been developed and optimized for use in carrier-frequency-modulated transmission applications. The IC combines small size with high sensitivity suppression of noise as caused by daylight and lamps. An innovative and patented pad layout offers unique flexibility for IR receiver module assembly. The ATA2526 is available with standard frequencies (33, 36, 37, 38, 40, 56 kHz) and 3 different noise suppression regulation types (standard, lamp, short burst), thus covering the requirements of different high-volume remote control solutions (please refer to selection guide available for ATA2525/ATA2526). The ATA2526 operates in a supply voltage range of 2.7V to 5.5V. The function of the ATA2526 can be described using the block diagram of Figure 1-1 on page 2. The input stage has two main functions. First it provides a suitable bias voltage for the PIN diode. Secondly the pulsed photo-current signals are transformed into a voltage by a special circuit which is optimized for low noise applications. After amplification by a Controlled Gain Amplifier (CGA) the signals have to pass a tuned integrated narrow bandpass filter with a center frequency f0 which is equivalent to the chosen carrier frequency of the input signal. The demodulator is used first to convert the input burst signal to a digital envelope output pulse and to evaluate the signal information quality, i.e., unwanted pulses will be suppressed at the output pin. This is done by means of an integrated dynamic feedback circuit which varies the gain as a function of the present environmental conditions (ambient light, modulated lamps etc.). Other features can be used to adapt the device to the individual application to ensure best transmission quality. 4905E–AUTO–09/09 Figure 1-1. Block Diagram VS IN Input Oscillator CGA and filter OUT Demodulator Microcontroller AGC/ATC and digital control Carrier frequency f0 ATA2526 Modulated IR signal min 6 or 10 pulses 2 GND ATA2526 4905E–AUTO–09/09 ATA2526 2. Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Parameter Symbol Value Unit Supply voltage VS –0.3 to +6 V Supply current IS 3 mA VIN –0.3 to VS V Input voltage Input DC current at VS = 5V IIN 0.75 mA Output voltage VO –0.3 to VS V Output current IO 10 mA Operating temperature Tamb –25 to +85 °C Storage temperature Tstg –40 to +125 °C Power dissipation at Tamb = 25°C Ptot 30 mW Symbol Value Unit RthJA 110 K/W 3. Thermal Resistance Parameters Junction ambient TSSOP8 4. Electrical Characteristics, 3-V Operation Tamb = –25°C to +85°C, VS = 2.7V to 3.3V unless otherwise specified. No. 1 Parameters Pin Symbol Min. Typ. Max. Unit Type* 1 VS 2.7 3.0 3.3 V C 1 IS 0.7 0.9 1.3 mA B kΩ A 250 mV B VS V B mA B µA C µA B Supply 1.1 Supply-voltage range 1.2 Supply current 2 Test Conditions IIN =0 Output 2.1 Internal pull-up resistor Tamb = 25°C See Figure 6-10 on page 10 1, 3 RPU 2.2 Output voltage low R2 = 1.4 kΩ See Figure 6-10 on page 10 3, 6 VOL 2.3 Output voltage high 3, 1 VOH 2.4 Output current clamping R2 = 0 See Figure 6-10 on page 10 3, 6 IOCL VIN = 0 See Figure 6-10 on page 10 5 IIN_DCMAX 5 IIN_DCMAX 3 40 VS – 0.25 8 Input 3.1 Input DC current 3.2 Input DC current VIN = 0; VS = 3V See Figure 6-3 on page 7 Tamb = 25°C –150 –350 *) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter Notes: 1. BER = bit error rate; e.g., BER = 5% means that with P = 20 at the input pin 19...21 pulses can appear at the pin OUT 2. After transformation of input current into voltage 3 4905E–AUTO–09/09 4. Electrical Characteristics, 3-V Operation (Continued) Tamb = –25°C to +85°C, VS = 2.7V to 3.3V unless otherwise specified. No. 3.3 3.4 3.5 4 Parameters Test Conditions Minimum detection Test signal: threshold current See Figure 6-9 on page 10 See Figure 6-1 on page 7 VS = 3V Tamb= 25°C, IIN_DC=1 µA Minimum detection square pp threshold current with AC burst N = 16 current disturbance f = f0; tPER = 10 ms IIN_AC100 = Figure 6-8 on page 9 3 µA at 100 Hz BER = 50(1) Maximum detection threshold current with VIN > 0V Test signal: See Figure 6-9 on page 10 VS = 3V, Tamb = 25°C IIN_DC = 1 µA square pp burst N = 16 f = f0; tPER = 10 ms Figure 6-8 on page 9 BER = 5%(1) Pin Symbol 3 IEemin 3 IEemin 3 IEemax Min. Typ. Max. Unit Type* –800 pA B –1600 pA C µA D –200 Controlled Amplifier and Filter 4.1 Maximum value of variable gain (CGA) VS = 3V, Tamb = 25°C GVARMAX 50 dB D 4.2 Minimum value of variable VS = 3V, Tamb = 25°C gain (CGA) GVARMIN –6 dB D 4.3 Total internal amplification(2) VS = 3V, Tamb = 25°C GMAX 72 dB D 4.4 Center frequency fusing accuracy of bandpass VS = 3V, Tamb = 25°C f03V_FUSE –2.5 f0 +2.5 % A 4.5 Overall accuracy center frequency of bandpass f03V –5.5 f0 +3.5 % C 4.6 Overall accuracy center frequency of bandpass Tamb = 0 to 70°C f03V –4.5 f0 +3.0 % C 4.7 BPF bandwidth –3 dB; f0 = 38 kHz; See Figure 6-7 on page 9 kHz C B 3.8 *) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter Notes: 1. BER = bit error rate; e.g., BER = 5% means that with P = 20 at the input pin 19...21 pulses can appear at the pin OUT 2. After transformation of input current into voltage 4 ATA2526 4905E–AUTO–09/09 ATA2526 5. Electrical Characteristics, 5-V Operation Tamb = –25°C to +85°C, VS = 4.5V to 5.5V unless otherwise specified. No. 5 Parameters Pin Symbol Min. Typ. Max. Unit Type* 1 VS 4.5 5.0 1 IS 0.9 1.2 5.5 V C 1.6 mA B kΩ A 250 mV B VS V B mA B µA C Supply 5.1 Supply-voltage range 5.2 Supply current 6 Test Conditions IIN =0 Output 6.1 Internal pull-up resistor Tamb = 25°C See Figure 6-10 on page 10 1, 3 RPU 6.2 Output voltage low R2 = 2.4 kΩ See Figure 6-10 on page 10 3, 6 VOL 6.3 Output voltage high 3, 1 VOH 6.4 Output current clamping R2 = 0 See Figure 6-10 on page 10 3, 6 IOCL VIN = 0 See Figure 6-10 on page 10 5 IIN_DCMAX 5 IIN_DCMAX –700 µA B 3 IEemin –1000 pA B 3 IEemin –2500 pA C 3 IEemax µA D 7 Input DC current 7.2 Input DC current VIN = 0; VS = 5V See Figure 6-4 on page 8 Tamb = 25°C 7.4 7.5 VS – 0.25 8 Input 7.1 7.3 40 Minimum detection Test signal: threshold current See Figure 6-9 on page See Figure 6-2 on page 7 10 VS = 5V Tamb = 25°C Minimum detection IIN_DC = 1 µA threshold current with AC square pp current disturbance burst N = 16 IIN_AC100 = 3 µA at f = f0; tPER = 10 ms 100 Hz Figure 6-8 on page 9 BER = 50(1) Maximum detection threshold current with VIN > 0V Test signal: See Figure 6-9 on page 10 VS = 5V, Tamb = 25°C IIN_DC = 1 µA square pp burst N = 16 f = f0; tPER = 10 ms Figure 6-8 on page 9 BER = 5%(1) –400 –500 *) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter Notes: 1. BER = bit error rate; e.g., BER = 5% means that with P = 20 at the input pin 19...21 pulses can appear at the pin OUT 2. After transformation of input current into voltage 5 4905E–AUTO–09/09 5. Electrical Characteristics, 5-V Operation (Continued) Tamb = –25°C to +85°C, VS = 4.5V to 5.5V unless otherwise specified. No. 8 Parameters Test Conditions Pin Symbol Min. Typ. Max. Unit Type* Controlled Amplifier and Filter 8.1 Maximum value of variable gain (CGA) VS = 5V, Tamb = 25°C GVARMAX 50 dB D 8.2 Minimum value of variable VS = 5V, Tamb = 25°C gain (CGA) GVARMIN –6 dB D 8.3 Total internal amplification(2) VS = 5V, Tamb = 25°C GMAX 72 dB D 8.4 Resulting center frequency fusing accuracy f0 fused at VS = 3V VS = 5V, Tamb = 25°C f05V f03V-FUSE + 0.5 % C *) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter Notes: 1. BER = bit error rate; e.g., BER = 5% means that with P = 20 at the input pin 19...21 pulses can appear at the pin OUT 2. After transformation of input current into voltage 5.1 Reliability Electrical qualification (1000h at 150°C) in molded SO8 plastic package 6 ATA2526 4905E–AUTO–09/09 ATA2526 6. Typical Electrical Curves at Tamb = 25°C Figure 6-1. IEemin versus IIN_DC, VS = 3V 100 IEemin (nA) VS = 3V f = f0 10 1 0 0 1 10 100 1000 100 1000 IIN_DC (µA) Figure 6-2. IEemin versus IIN_DC, VS = 5V 100 IEemin (nA) VS = 5V f = f0 10 1 0 0 1 10 IIN_DC (µA) Figure 6-3. VIN versus IIN_DC, VS = 3V 3.5 VS = 3V f = f0 3.0 VIN (V) 2.5 2.0 1.5 1.0 0.5 0 0 0.1 1 10 100 1000 IIN_DC (µA) 7 4905E–AUTO–09/09 Figure 6-4. VIN versus IIN_DC, VS = 5V 3.5 VS = 5V f = f0 3.0 VIN (V) 2.5 2.0 1.5 1.0 0.5 0 0 0.1 1 10 100 1000 IIN_DC (µA) Figure 6-5. Data Transmission Rate, VS = 3V 4000 3500 3060 3000 Short burst type Bits/s 2500 2077 2000 2000 Standard type 1357 1500 1333 1000 905 Lamp type 500 0 30 35 40 45 50 55 60 f0 (kHz) Figure 6-6. Data Transmission Rate, VS = 5V 4000 3415 3500 Short burst type 3000 2317 Bits/s 2500 2179 Standard type 2000 1479 1500 1404 1000 952 Lamp type 500 0 30 35 40 45 50 55 60 f0 (kHz) 8 ATA2526 4905E–AUTO–09/09 ATA2526 Figure 6-7. Typical Bandpass Curve 1.1 VS = 3V Relative Amplitude 1.0 0.9 0.8 Bandwidth (-3 dB) 0.7 0.6 0.5 0.4 0.92 0.94 0.96 0.98 1.00 1.02 1.04 1.06 1.08 f/f0 Q = f/f0/B; B → –3 dB values Example: Q = 1/(1.047 – 0.954) = 11 Figure 6-8. Illustration of Used Terms, Example: f = 33 kHz, burst with 16 pulses, 16 periods Period (P = 16) t PER = 970 µs Burst (N = 16 pulses) t B = 485 µs t GAP > t DON + t DOFF IN 1 7 16 7 7 33 µs (f0 = 33 kHz) OUT t DON tDOFF 485 µs Envelope 16 Envelope 1 15520 µs OUT Telegram pause Data word Data word t 16 ms TREF = 62 ms 9 4905E–AUTO–09/09 Figure 6-9. Test Circuit I Ee = ΔU1/400 kΩ ΔU1 VDD = 3V to 5V 400 kΩ 1 nF IIN_DC R1 = 220Ω VS IIN IEe 20 kΩ ATA2526 1 nF VPULSE IIN_AC100 IN OUT GND ΔU2 C1 I IN_DC = ΔU2/40 kΩ 20 kΩ f0 + 4.7 µF 16 DC + tPER = 10 ms Figure 6-10. Application Circuit VDD = 3V to 5V R2(1) > 2.4 kΩ R1 = 220Ω RPU IS VS IOCL IN ATA2526 IIN Microcontroller OUT GND + IIN_DC IEe C1 4.7 µF VIN VO C2(2) = 470 pF (10 nF) (1) Optional (2) The value of C2 is dimensioned for the short burst type ATA2526P7xx. For the other types C2 can be omitted. In case of an optional resistor R2 > 2.4 kΩ the value of C 2 must be increased to C2 = 10 nF. For the other types C2 = 470 pF is sufficient. 10 ATA2526 4905E–AUTO–09/09 ATA2526 7. Chip Dimensions Figure 7-1. Chip Size in µm 1080,960 GND 393,839 IN 666,828 scribe length OUT 225,496 ATA2526 48,73 VS Versioning Zapping 0,0 width Note: Pad coordinates are given for lower left corner of the pad in µm from the origin 0,0 Dimensions Pad metallurgy Finish Note: Length inclusive scribe 1.04 mm Width inclusive scribe 1.20 mm Thickness 290 µ ± 5% Pads 80 µ × 80 µ Fusing pads 60 µ × 60 µ Material AlCu/AlSiTi(1) Thickness 0.8 µm Material Si3N4/SiO2 Thickness 0.7/0.3 µm 1. Value depends on manufacture location. 11 4905E–AUTO–09/09 8. Ordering Information Delivery: unsawn wafers (DDW) in box D(2) Extended Type Number Type ATA2526S1xx C-DDW 2175 Standard type: ≥ 10 pulses, high data rate ATA2526S3xx(1)C-DDW 1400 Lamp type: ≥ 10 pulses, enhanced suppression of disturbances, secure data transmission ATA2526S7xx(1)C-DDW 3415 Short burst type: ≥ 6 pulses, highest data rate (1) Notes: 1. xx means carrier frequency value (33, 36, 37, 38 or 40 kHz and 56 kHz) 2. Maximum data transmission rate up to bits/s with f0 = 56 kHz, VS = 5V (see Figure 6-6 on page 8) 8.1 Pad Layout Figure 8-1. Pad Layout GND IN OUT ATA2526 Pad layout VS Table 8-1. SYMBOL 12 Zapping Versioning Pin Description FUNCTION OUT Data output VS Supply voltage GND GND IN Input pin diode Zapping f0 adjust Versioning Type adjust ATA2526 4905E–AUTO–09/09 ATA2526 9. Revision History Please note that the following page numbers referred to in this section refer to the specific revision mentioned, not to this document. Revision No. History 4905E-AUTO-09/09 • Put datasheet in newest template • Section 8 “Ordering Information” on page 12 changed • • • • • 4905D-AUTO-10/06 • • • • • Features on page 1 changed Applications on page 1 changed Section 1 “Description” on page 1 changed Section 2 “Pin Configuration” on page 2 changed Number 2.2, 3.3 and 3.4 of Section 5 “Electrical Characteristics, 3-V Operation” on pages 3 to 4 changed Number 73, 7.4 and 8.4 of Section 5 “Electrical Characteristics, 3-V Operation” on page 5 to 6 changed Section 6.1 “ESD” on page 6 deleted Figure 7-10 “Application Circuit” on page 10 changed Section 9 “Ordering Information” on page 12 changed Rename Figure 9-1 on page 12 4905C-AUTO-04/06 • Section 9 “Ordering Information” on page 12 changed 4905B-AUTO-04/06 • Put datasheet in a new template • Section 8 “Chip Dimensions” on page 11 changed 13 4905E–AUTO–09/09 Headquarters International Atmel Corporation 2325 Orchard Parkway San Jose, CA 95131 USA Tel: 1(408) 441-0311 Fax: 1(408) 487-2600 Atmel Asia Unit 1-5 & 16, 19/F BEA Tower, Millennium City 5 418 Kwun Tong Road Kwun Tong, Kowloon Hong Kong Tel: (852) 2245-6100 Fax: (852) 2722-1369 Atmel Europe Le Krebs 8, Rue Jean-Pierre Timbaud BP 309 78054 Saint-Quentin-en-Yvelines Cedex France Tel: (33) 1-30-60-70-00 Fax: (33) 1-30-60-71-11 Atmel Japan 9F, Tonetsu Shinkawa Bldg. 1-24-8 Shinkawa Chuo-ku, Tokyo 104-0033 Japan Tel: (81) 3-3523-3551 Fax: (81) 3-3523-7581 Technical Support [email protected] Sales Contact www.atmel.com/contacts Product Contact Web Site www.atmel.com Literature Requests www.atmel.com/literature Disclaimer: The information in this document is provided in connection with Atmel products. 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