ATA2525 IR Receiver ASSP DATASHEET Features ● No external components except PIN diode ● Supply-voltage range: 4.5V to 5.5V ● High sensitivity due to automatic sensitivity adaption (AGC) and automatic strong signal adaption (ATC) ● High immunity against disturbances from daylight and lamps ● Small size and innovative pad layout ● Available for carrier frequencies between 33kHz to 40kHz; adjusted by zener diode fusing ● TTL and CMOS compatible ● Suitable minimum burst length ≥ 10 pulses/burst Applications ● Home entertainment applications ● Home appliances ● Remote control equipment 4854H-AUTO-03/14 1. Description The Atmel® IC ATA2525 is a complete IR receiver for data communication that was developed and optimized for use in carrier-frequency-modulated transmission applications. The IC combines small size with high sensitivity as well as high suppression of noise from daylight and lamps. An innovative and patented pad layout offers unique flexibility for assembly of IR receiver modules. The Atmel ATA2525 is available with standard carrier frequencies (33, 36, 37, 38, 40kHz) and 3 different noise suppression regulation types (standard, lamp, noise) covering requirements of different high-volume remote control solutions (please refer to selection guide available for Atmel ATA2525/ATA2526). The Atmel ATA2525 operates in a supply voltage range of 4.5V to 5.5V. The function of Atmel ATA2525 can be described using the block diagram (see Figure 1-1 on page 2). The input stage meets two main functions. First, it provides a suitable bias voltage for the PIN diode. Secondly, the pulsed photo-current signals are transformed into a voltage by a special circuit which is optimized for low-noise applications. After amplification by a controlled gain amplifier (CGA), the signals have to pass a tuned integrated narrow bandpass filter with a center frequency f0 which is equivalent to the chosen carrier frequency of the input signal. The demodulator is used to convert the input burst signal into a digital envelope output pulse and to evaluate the signal information quality, i.e., unwanted pulses will be suppressed at the output pin. All this is done by means of an integrated dynamic feedback circuit which varies the gain as a function of the present environmental condition (ambient light, modulated lamps etc.). Other special features are used to adapt to the current application to secure best transmission quality. Figure 1-1. Block Diagram VS IN Input Oscillator CGA and Filter Demodulator AGC/ATC and Digital Control Carrier Frequency f0 ATA2525 Modulated IR Signal min 10 Pulses GND 2 ATA2525 [DATASHEET] 4854H–AUTO–03/14 OUT Microcontroller 2. Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Parameters Supply voltage Supply current Symbol Value Unit VS –0.3 to +6 V IS 3 mA Input voltage VIN –0.3 to VS V Input DC current at VS = 5V IIN 0.75 mA Output voltage VO –0.3 to VS V Output current IO 10 mA Operating temperature Tamb –25 to +85 °C Storage temperature Tstg –40 to +125 °C Power dissipation at Tamb = 25°C Ptot 30 mW 3. Electrical Characteristics Tamb = –25°C to +85°C, VS = 4.5V to 5.5V unless otherwise specified. No. 1 Parameters Symbol Min. Supply-voltage range 1.2 Supply current IIN = 0 VS IS Max. Internal pull-up resistor Tamb = 25°C; see Figure 5-7 on page 8 RPU 2.2 Output voltage low IL = 2mA; see Figure 5-7 on page 8 VOL 2.3 Output voltage high Tamb = 25°C VOH 2.4 Output current clamping R2 = 0; see Figure 5-7 on page 8 IOCL 4.5 5 0.8 1.1 Type* 5.5 V C 1.4 mA B kΩ A 250 mV B VS V A mA B µA C –960 µA B –600 pA B 40 VS – 0.25 8 Input 3.1 Input DC current VIN = 0; see Figure 5-7 on page 8 IIN_DCMAX –85 3.2 Input DC current; see Figure 5-1 on page 5 VIN = 0; Vs = 5V, Tamb = 25°C IIN_DCMAX –530 Minimum detection threshold current; see Figure 5-2 on page 5 Test signal: see Figure 5-6 on page 7 VS = 5V, Tamb = 25°C, IIN_DC = 1µA; square pp, burst N = 16, f = f0; tPER = 10ms, see Figure 5-6 on page 7; BER = 50(1) 3.3 Unit Output 2.1 3 Typ. Supply 1.1 2 Test Conditions IEemin *) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter Notes: 1. BER = Bit Error Rate; e.g., BER = 5% means that with P = 20 at the input pin 19...21 pulses can appear at the pin OUT 2. After transformation of input current into voltage ATA2525 [DATASHEET] 4854H–AUTO–03/14 3 3. Electrical Characteristics (Continued) Tamb = –25°C to +85°C, VS = 4.5V to 5.5V unless otherwise specified. No. 3.4 3.5 4 Parameters Test Conditions Symbol Minimum detection threshold current with AC current disturbance IIN_AC100 = 3 µA at 100 Hz Test signal: see Figure 5-6 on page 7 VS = 5V, Tamb = 25°C, IIN_DC = 1µA, square pp, burst N = 16, f = f0; tPER = 10ms, see Figure 5-6 on page 7; BER = 50%(1) IEemin Maximum detection threshold current Test signal: see Figure 5-6 on page 7 VS = 5V, Tamb = 25°C, IIN_DC = 1µA; square pp, burst N = 16, f = f0; tPER = 10ms, see Figure 5-6 on page 7; BER = 5%(1) IEemax Min. Typ. Max. –850 –400 Unit Type* pA C µA D Controlled Amplifier and Filter 4.1 Maximum value of variable VS = 5V, Tamb = 25°C gain (CGA) GVARMAX 51 dB D 4.2 Minimum value of variable VS = 5V, Tamb = 25°C gain (CGA) GVARMIN –5 dB D 4.3 Total internal amplification(2) VS = 5V, Tamb = 25°C GMAX 71 dB D 4.4 Center frequency fusing accuracy of bandpass VS = 5V, Tamb = 25°C f0_FUSE –3 f0 +3 % A 4.5 Overall accuracy center frequency of bandpass f0 –6.7 f0 +4.1 % C 4.6 BPF bandwidth kHz B –3dB; f0 = 38kHz; see Figure 5-4 on page 6 B 3.5 *) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter Notes: 1. BER = Bit Error Rate; e.g., BER = 5% means that with P = 20 at the input pin 19...21 pulses can appear at the pin OUT 2. After transformation of input current into voltage 4 ATA2525 [DATASHEET] 4854H–AUTO–03/14 4. Reliability Electrical qualification (1000h at 150°C) in molded SO8 plastic package Typical Electrical Curves at Tamb = 25°C Figure 5-1. VIN versus IIN_DC, VS = 5V 3 2.94 2.79 2.44 VIN (V) 2 1 1.14 0 0 0.1 1.0 10.0 100.0 1000.0 IIN_DC (µA) Figure 5-2. IEemin versus IIN_DC, VS = 5V 100 IEemin (nA) 5. 10 3.6 1 1.2 0.49 0 0.1 1 10 100 1000 IIN_DC (µA) ATA2525 [DATASHEET] 4854H–AUTO–03/14 5 Figure 5-3. Data Transmission Rate, VS = 5V 1750 1418 Standard type 1500 Bits/s 1250 1493 1119 Lamp type 1000 735 980 693 750 500 931 730 Noise type 547 250 0 28 32 36 40 44 f0 (kHz) Figure 5-4. Typical Bandpass Curve 1.1 Relative Amplitude 1.0 0.9 0.8 -3dB -3dB 0.7 0.6 0.5 Δf 0.4 0.92 0.94 0.96 0.98 1.00 f/f0 Q = f0/Δf; Δf = –3dB values. Example: Q = 1/(1.047 – 0.954) = 11 6 ATA2525 [DATASHEET] 4854H–AUTO–03/14 1.02 1.04 1.06 1.08 Figure 5-5. Illustration of Used Terms 1066μs 533μs Period (P = 16) Burst (N = 16 Pulses) IN 1 7 16 7 7 33μs OUT tDON tDOFF 533μs Envelope 1 Envelope 16 17056μs/Data Word OUT Telegram Pause Data Word Data Word t 17ms TREP = 62ms Example: f = 30kHz, burst with 16 pulses, 16 periods Figure 5-6. Test Circuit IEe = ΔU1/400kΩ ΔU1 1nF VDD = 5V 400kΩ R 1 = 220Ω IIN_DC VS IIN IEe IPIN_AC100 20kΩ IN 1nF VPULSE OUT GND ΔU2 + IIN_DC = ΔU2/40kΩ 20kΩ f0 16 ATA2525 C 1 = 4.7μF DC + tPER = 10ms ATA2525 [DATASHEET] 4854H–AUTO–03/14 7 Figure 5-7. Application Circuit (1) VDD = 5V optional R 2(1) > 2.4kΩ R 1 = 220Ω RPU = 40kΩ IS VS IOCL IN IIN ATA2525 IL OUT IN Microcontroller GND + IIN_DC 8 IEe ATA2525 [DATASHEET] 4854H–AUTO–03/14 C 1 = 4.7μF VIN VO C 2(1) ≤ 470pF Chip Dimensions Figure 6-1. Chip Size in µm 990,960 GND 393,839 IN 603,828 scribe OUT length 6. 224,495 ATA2525 47,72 VS Zapping Versioning 0,0 width Note: Pad coordinates are for lower left corner of the pad in µm from the origin 0,0 Dimensions Pad metallurgy Finish Note: 1. Length inclusive scribe 1.04mm Width inclusive scribe 1.11mm Thickness 290µ ±5% Pads 80µ × 80µ Fusing pads 60µ × 60µ Material AlCu/AlSiTi(1) Thickness 0.8µm Material Si3N4/SiO2(1) Thickness 0.7/0.3µm Value depends on manufacture location. ATA2525 [DATASHEET] 4854H–AUTO–03/14 9 7. Ordering Information Delivery: unsawn wafers (DDW) in box D(2) Extended Type Number Type (1) 1493 Standard type: high data rate (1) 980 Lamp type: enhanced suppression of disturbances, secure data transmission ATA2525S1xx C-DDW ATA2525S3xx C-DDW ATA2525S5xx(1)C-DDW 730 Noise type: best suppression of disturbances, low data rate Notes: 1. xx means the used carrier frequency value (33, 36, 37, 38 or 40kHz) 2. Maximum data transmission rate up to bits/s with f0 = 40kHz, VS = 5V (see Figure 5-2 on page 5 8. Pad Layout Figure 8-1. Pad Layout GND IN OUT ATA2525 VS Table 8-1. 10 Zapping Versioning Pin Description Symbol Function OUT Data output VS Supply voltage GND GND IN Input pin diode Zapping f0 adjust Versioning Type adjust ATA2525 [DATASHEET] 4854H–AUTO–03/14 9. Revision History Please note that the following page numbers referred to in this section refer to the specific revision mentioned, not to this document. Revision No. History 4854H-AUTO-03/14 • Put datasheet in the newest template 4854G-AUTO-05/10 4854F-AUTO-09/09 • Page 3: Thermal Resistance table deleted • Page 3 and 4: Pin column in Electrical Characteristics table deleted • Put datasheet in newest template • Ordering Information table changed • Features on page 1 changed • Applications on page 1 changed • Section 1 “Description” on page 1 changed 4854E-AUTO-10/06 • Section 2 “Pin Configuration” on page 2 deleted • Section 4 “Electrical Characteristics” number 3.3 on page 4 changed • Section 4 “Electrical Characteristics” number 3.4 on page 4 changed • Section 6 “ESD” on page 5 deleted • Section 10 “Ordering Information” on page 10 changed 4854D-AUTO-04/06 • Put datasheet in a new template • Section 10 “Ordering Information” on page 10 changed ATA2525 [DATASHEET] 4854H–AUTO–03/14 11 XXXXXX Atmel Corporation 1600 Technology Drive, San Jose, CA 95110 USA T: (+1)(408) 441.0311 F: (+1)(408) 436.4200 | www.atmel.com © 2014 Atmel Corporation. / Rev.: 4854H–AUTO–03/14 Atmel®, Atmel logo and combinations thereof, Enabling Unlimited Possibilities®, and others are registered trademarks or trademarks of Atmel Corporation or its subsidiaries. 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