GBJ/KBJ25A thru GBJ/KBJ25M SILICON BRIDGE RECTIFIERS GLASS PASSIVATED BRIDGE RECTIFIERS CHENG- YI ELECTRONIC REVERSE VOLTAGE -50 to 1000 Volts FORWARD CURRENT -25 Amperes HIKE FOR NO. 6 SCRES 5.16 FEATURES Rating to 1000V PRV Ideal for printed circuit board Low forward voltage drop, high current capability Reliable low cost construction utilizing molded plastic technique results in inexpensive product The plastic material has UL flammability classification 94V-O SPACING MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 250C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. SYMBOL GBJ KBJ 25A GBJ KBJ 25B GBJ KBJ 25D GBJ KBJ 25G GBJ KBJ 25J GBJ KBJ 25K GBJ KBJ 25M UNITS Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 V Maximum RMS Voltage VRMS 35 70 140 280 420 560 700 V Maximum DC Voltage VDC 50 100 200 400 600 800 1000 V CHARACTERISTICS 25.0 Maximum Average Forward (with heatsink Note 2) Rectified Current @ TC=110 C (without heatsink) I(AV) Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC Method) IFSM 350 A VF 1.05 V 0 Maximum Forward Voltage at 12.5A DC Maximum DC Reverse Current at rated DC Blocking Voltage @ TJ=250C @ TJ=1250C IR A 4.2 10 A 500 I2 t Rating for fusing (t<8.3ms) I2 t 510 A2S Typical Junction Capacitance per element (Note 1) CJ 85 PF Typical Thermal Resistance (Note 2) Operating Temperature Range Storage Temperature Range R JC 0.6 0 C/W TJ -55 to +150 0 TSTG -55 to +150 0 NOTES: 1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC. 2. Device mounted on 300mm x 300mm X 1.6mm Cu Plate Heatsink. C C GBJ/KBJ25A thru GBJ/KBJ25M SILICON BRIDGE RECTIFIERS GLASS PASSIVATED BRIDGE RECTIFIERS CHENG- YI ELECTRONIC RATING AND CHARACTERISTICS CURVES GBJ/KBJ25A THRU GBJ/KBJ25M FIG. 2 - MAXIMUM NON-REPETITIVE SURGE CURRENT 25 PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD CURRENT AMPERES FIG. 1 - FORWARD CURRENT DERATING CURVE WITH HEATSINK 20 15 SINGLE PHASE HALF WAVE 60Hz RESISTIVE OR INDUCTIVE LOAD 10 5 WITHOUT HEATSINK 0 20 40 60 80 100 120 400 o TJ=150C SINGLE SINE-WAVE (JEDEC METHOD) 200 Single Half Sine-Wave (JEDEC METHOD) 0 1 140 2 CASE TEMPERATURE, 0C FIG. 3 - TYPICAL JUNCTION CAPACITANCE 10 20 50 100 FIG. 4 - TYPICAL FORWARD CHARACTERISTICS 1000 INSTANTANEOUS FORWARD CURRENT, (A) 100 100 10 10 1.0 0.1 0 TJ=25C PULSE WIDTH:300 0 TJ=25C, f= 1MHz 1.0 S 0.01 4.0 10.0 100 0 0.2 0.4 0.6 FIG. 5 - TYPICAL REVERSE CHARACTERISTICS 1000 0 TJ=125C 100 0 TJ=100C 10 TJ=500C 1.0 TJ=250C 0.1 0 0.8 1.0 1.2 1.4 1.6 INSTANTANEOUS FORWARD VOLTAGE, VOLTS REVERSE VOLTAGE, VOLTS A) 1.0 INSTANTANEOUS REVERSE CURRENT, ( CAPACITANCE, (pF) 5 NUMBER OF CYCLES AT 60Hz 20 40 60 80 100 PERCENT OF RATED PEAK REVERSE VOLTAGE, (%) 1.8