FREESCALE MRF21045

Freescale Semiconductor
Technical Data
Document Number: MRF21045
Rev. 11, 5/2006
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
MRF21045LR3
MRF21045LSR3
Designed for W- CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L
applications.
• Typical 2-carrier W-CDMA Performance for VDD = 28 Volts, IDQ = 500 mA,
f1 = 2135 MHz, f2 = 2145 MHz, Channel Bandwidth = 3.84 MHz,
Adjacent Channels measured over 3.84 MHz Bandwidth at f1 - 5 MHz
and f2 +5 MHz, Distortion Products measured over a 3.84 MHz Bandwidth
at f1 - 10 MHz and f2 +10 MHz, Peak/Avg. = 8.3 dB @ 0.01% Probability
on CCDF.
Output Power — 10 Watts Avg.
Efficiency — 23.5%
Gain — 15 dB
IM3 — - 37.5 dBc
ACPR — - 41 dBc
• Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 45 Watts CW
Output Power
Features
• Internally Matched for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Low Gold Plating Thickness on Leads, 40μ″ Nominal.
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 Inch Reel.
2110 - 2170 MHz, 45 W, 28 V
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465E - 04, STYLE 1
NI - 400
MRF21045LR3
CASE 465F - 04, STYLE 1
NI - 400S
MRF21045LSR3
Table 1. Maximum Ratings
Symbol
Value
Unit
Drain- Source Voltage
Rating
VDSS
- 0.5, +65
Vdc
Gate- Source Voltage
VGS
- 0.5, +15
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
105
0.60
W
W/°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
TJ
200
°C
Symbol
Value (1)
Unit
RθJC
1.65
°C/W
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Table 3. ESD Protection Characteristics
Test Conditions
Human Body Model
Machine Model
Class
1 (Minimum)
M2 (Minimum)
1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF21045LR3 MRF21045LSR3
1
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
V(BR)DSS
65
—
—
Vdc
Zero Gate Voltage Drain Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Gate- Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 100 μAdc)
VGS(th)
2
—
4
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 500 mAdc)
VGS(Q)
3
3.9
5
Vdc
Drain- Source On - Voltage
(VGS = 10 Vdc, ID = 1 Adc)
VDS(on)
—
0.19
0.21
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 1 Adc)
gfs
—
3
—
S
Crss
—
1.8
—
pF
Characteristic
Off Characteristics
Drain- Source Breakdown Voltage
(VGS = 0 Vdc, ID = 100 μAdc)
On Characteristics (DC)
Dynamic Characteristics (1)
Reverse Transfer Capacitance
(VDS = 28 Vdc, VGS = 0, f = 1 MHz)
Functional Tests (In Freescale Test Fixture, 50 ohm system) 2 - carrier W - CDMA. Peak/Avg. = 8.3 dB @ 0.01% Probability on CCDF.
Common- Source Amplifier Power Gain
(VDD = 28 Vdc, Pout = 10 W Avg., IDQ = 500 mA, f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz)
Gps
13.5
15
—
dB
Drain Efficiency
(VDD = 28 Vdc, Pout = 10 W Avg., IDQ = 500 mA, f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz)
η
21
23.5
—
%
IM3
—
- 37.5
- 35
dBc
Adjacent Channel Power Ratio
(VDD = 28 Vdc, Pout = 10 W Avg., IDQ = 500 mA, f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; ACPR
measured over 3.84 MHz Bandwidth at f1 - 5 MHz and f2 +5 MHz.)
ACPR
—
- 41
- 38
dBc
Input Return Loss
(VDD = 28 Vdc, Pout = 10 W Avg., IDQ = 500 mA, f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz)
IRL
—
- 12
-9
dB
Third Order Intermodulation Distortion
(VDD = 28 Vdc, Pout = 10 W Avg., IDQ = 500 mA, f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; IM3
measured over 3.84 MHz Bandwidth at f1 - 10 MHz and f2 +10 MHz.)
1. Part is internally matched both on input and output.
(continued)
MRF21045LR3 MRF21045LSR3
2
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Two - Tone Common - Source Amplifier Power Gain
(VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 500 mA,
f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)
Gps
—
14.9
—
dB
Two - Tone Drain Efficiency
(VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 500 mA,
f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)
η
—
36
—
%
Intermodulation Distortion
(VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 500 mA,
f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)
IMD
—
- 30
—
dBc
Two - Tone Input Return Loss
(VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 500 mA,
f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)
IRL
—
- 12
—
dB
P1dB
—
50
—
W
Functional Tests (In Freescale Test Fixture, 50 ohm system) — continued
Pout, 1 dB Compression Point
(VDD = 28 Vdc, IDQ = 500 mA, f = 2170 MHz)
MRF21045LR3 MRF21045LSR3
RF Device Data
Freescale Semiconductor
3
VBIAS
R3
R1
R4
B1
+
R2
C5
C4
C3
C7
C2
Z1
Z2
Z3
Z4
C1
Z1, Z9
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z10
+
C8
C9
C10
C11
Z10
Z5
RF
INPUT
VSUPPLY
L1
+
Z6
Z7
Z8
RF
OUTPUT
C6
DUT
0.750″ x 0.084″ Transmission Line
0.160″ x 0.084″ Transmission Line
1.195″ x 0.176″ Transmission Line
0.125″ x 0.320″ Transmission Line
1.100″ x 0.045″ Transmission Line
0.442″ x 0.650″ Transmission Line
0.490″ x 0.140″ Transmission Line
0.540″ x 0.084″ Transmission Line
0.825″ x 0.055″ Transmission Line
Z9
0.030″ Glass Teflon®,
Keene GX - 0300- 55- 22, εr = 2.55
Etched Circuit Boards
MRF21045 Rev. 3, CMR
Board
PCB
Figure 1. MRF21045LR3(SR3) Test Circuit Schematic
Table 5. MRF21045LR3(SR3) Component Designations and Values
Designators
Description
B1
Short Ferrite Bead, Fair Rite, #2743019447
C1, C2, C6
43 pF Chip Capacitors, ATC #100B430JCA500X
C7
5.6 pF Chip Capacitor, ATC #100B5R6JCA500X
C3, C9
1000 pF Chip Capacitors, ATC #100B102JCA500X
C4, C10
0.1 mF Chip Capacitors, Kemet #CDR33BX104AKWS
C5
1.0 mF Tantalum Chip Capacitor, Kemet #T491C105M050
C8
10 mF Tantalum Chip Capacitor, Kemet #T495X106K035AS4394
C11
22 mF Tantalum Chip Capacitor, Kemet #T491X226K035AS4394
L1
1 Turn, #20 AWG, 0.100″ ID
N1, N2
Type N Flange Mounts, Omni Spectra #3052 - 1648- 10
R1
1.0 kΩ, 1/8 W Chip Resistor
R2
180 kΩ, 1/8 W Chip Resistor
R3, R4
10 Ω, 1/8 W Chip Resistors
MRF21045LR3 MRF21045LSR3
4
RF Device Data
Freescale Semiconductor
C8
C7
R1
B1 R3
C2
L1
C10 R4
C9
R2
C5
C4 C3
C11
C1
C6
WB1
WB2
MRF21045
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 2. MRF21045LR3(SR3) Test Circuit Component Layout
MRF21045LR3 MRF21045LSR3
RF Device Data
Freescale Semiconductor
5
Gps
15
−40
η
10
5
−45
−50
IM3
ACPR
0
−55
1
0.5
10
IMD, INTERMODULATION DISTORTION (dBc)
35
−40
30
3rd Order
5th Order
15
−55
η
−60
VDD = 28 Vdc, IDQ = 500 mA
f1 = 2135 MHz, f2 = 2145 MHz
7th Order
−65
4
10
5
6
8
10
30
50 60
Figure 3. 2-Carrier W-CDMA ACPR, IM3,
Power Gain and Drain Efficiency versus
Output Power
Figure 4. Intermodulation Distortion Products
versus Output Power
700 mA
400 mA
VDD = 28 Vdc
f1 = 2135 MHz
f2 = 2145 MHz
500 mA
−50
4
6
8
10
30
50 60
28
−10
26
IRL
−15
24
η
−20
22
−25
VDD = 28 Vdc, Pout = 10 W (Avg.), IDQ = 500 mA
2−Carrier W−CDMA, 10 MHz Carrier Spacing
3.84 MHz Channel Bandwidth
Peak/Avg. = 8.3 dB @ 0.01% Probability (CCDF)
20
−30
18
IM3
−35
16
ACPR
−40
14
Gps
−45
2110
2090
2130
2150
2170
Pout, OUTPUT POWER (WATTS) PEP
f, FREQUENCY (MHz)
Figure 5. Intermodulation Distortion versus
Output Power
Figure 6. 2 - Carrier W - CDMA Broadband
Performance
15.5
60
14.5
40
14
30
13.5
20
η
VDD = 28 Vdc
IDQ = 500 mA
f = 2170 MHz
13
8
10
Pout, OUTPUT POWER (WATTS)
Figure 7. CW Performance
30
−26
IMD
39
−27
38
−28
37
−29
36
−30
IDQ = 500 mA
Pout = 45 W (PEP)
f1 = 2135 MHz, f2 = 2145 MHz
35
0
6
50 60
−25
40
10
12.5
4
−24
η
41
η, DRAIN EFFICIENCY (%)
50
η, DRAIN EFFICIENCY (%)
15
2190
42
Gps
G ps , POWER GAIN (dB)
20
−50
Pout, OUTPUT POWER (WATTS) PEP
600 mA
2
25
−45
Pout, OUTPUT POWER (WATTS Avg.) W−CDMA
IDQ = 300 mA
−45
−35
3
−30
−40
40
20
−25
−35
−30
η, DRAIN EFFICIENCY (%)
−35
45
IM3 (dBc), ACPR (dBc), IRL, INPUT RETURN LOSS (dB)
20
−30
IM3 (dBc), ACPR (dBc)
25
−25
−31
34
−32
24
25
26
27
28
29
VDD, DRAIN SUPPLY (V)
Figure 8. Two - Tone Intermodulation Distortion
and Drain Efficiency versus Drain Supply
MRF21045LR3 MRF21045LSR3
6
RF Device Data
Freescale Semiconductor
IMD, INTERMODULATION DISTORTION (dBc)
−25
VDD = 28 Vdc, IDQ = 500 mA
f1 = 2135 MHz, f2 = 2145 MHz
3.84 MHz Channel Bandwidth
Peak/Avg. = 8.3 dB @ 0.01% Probability (CCDF)
IMD, INTERMODULATION DISTORTION (dBc)
30
η, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB)
η, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB)
TYPICAL CHARACTERISTICS
40
−10
IRL
35
IDQ = 700 mA
15.5
500 mA
−15
η
30
600 mA
15
G ps , POWER GAIN (dB),η, DRAIN EFFICIENCY (%)
G ps , POWER GAIN (dB)
16
−20
VDD = 28 Vdc
Pout = 45 W (PEP)
IDQ = 500 mA
f1 = f − 5 MHz, f2 = f + 5 MHz
25
−25
20
400 mA
14.5
VDD = 28 Vdc
f1 = 2135 MHz
f2 = 2145 MHz
300 mA
−30
IMD
15
14
−35
Gps
10
4
6
8
10
50 60
30
2110
2090
2130
2150
−40
2190
2170
Pout, OUTPUT POWER (WATTS) PEP
f, FREQUENCY (MHz)
Figure 9. Two-Tone Power Gain versus
Output Power
Figure 10. Two-Tone Broadband Performance
IRL, INPUT RETURN LOSS (dB)
IMD, INTERMODULATION DISTORTION (dBc)
TYPICAL CHARACTERISTICS
−25
+20
−30
3.84 MHz
Channel BW
+30
3rd Order
0
VDD = 28 Vdc
Pout = 45 W (PEP)
IDQ = 500 mA
f1 = 2140 MHz − Df/2, f2 = 2140 MHz + Df/2
−35
−40
−10
(dB)
IMD, INTERMODULATION DISTORTION (dBc)
W - CDMA TEST SIGNAL
5th Order
−20
−30
−40
−45
−50
7th Order
−50
−60
−70
−55
0.1
1
Df, TONE SEPARATION (MHz)
10
Figure 11. Intermodulation Distortion
Products versus Two - Tone Spacing
30
−ACPR in
+ACPR in
3.84 MHz BW 3.84 MHz BW
−IM3 in
3.84 MHz BW
−80
−25 −20
−15
−10
−5
0
5
10
+IM3 in
3.84 MHz BW
15
20
25
f, FREQUENCY (MHz)
Figure 12. 2-Carrier W-CDMA Spectrum
MRF21045LR3 MRF21045LSR3
RF Device Data
Freescale Semiconductor
7
f = 2110 MHz
f = 2170 MHz
Zload
Zsource
f = 2110 MHz
f = 2170 MHz
Zo = 25 Ω
VDD = 28 Vdc, IDQ = 500 mA, Pout = 10 W Avg.
f
MHz
Zsource
Ω
Zload
Ω
2110
18.88 - j8.86
3.11 - j4.18
2140
19.80 - j9.93
3.09 - j3.87
2170
19.68 - j10.44
3.12 - j3.72
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under Test
Input
Matching
Network
Z
source
Z
load
Figure 13. Series Equivalent Source and Load Impedance
MRF21045LR3 MRF21045LSR3
8
RF Device Data
Freescale Semiconductor
NOTES
MRF21045LR3 MRF21045LSR3
RF Device Data
Freescale Semiconductor
9
NOTES
MRF21045LR3 MRF21045LSR3
10
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
2X
G
bbb
Q
M
T B
M
A
M
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1994.
3. DIMENSION H IS MEASURED 0.030 (0.762)
AWAY FROM PACKAGE BODY.
4. INFORMATION ONLY: CORNER BREAK (4X) TO
BE .060±.005 (1.52±0.13) RADIUS OR .06±.005
(1.52±0.13) x 45° CHAMFER.
B
SEE NOTE 4
1
2X K
3
B
2
2X D
bbb
M
T A
M
B
M
N (LID)
ccc
M
T A
B
M
ccc
M
aaa
M
T A
M
B
M
A
M
F
T
M
(INSULATOR)
B
M
R (LID)
C
E
T A
M
S
(INSULATOR)
SEATING
PLANE
aaa
M
T A
M
H
B
M
DIM
A
B
C
D
E
F
G
H
K
M
N
Q
R
S
aaa
bbb
ccc
INCHES
MIN
MAX
.795
.805
.380
.390
.125
.163
.275
.285
.035
.045
.004
.006
.600 BSC
.057
.067
.092
.122
.395
.405
.395
.405
.120
.130
.395
.405
.395
.405
.005 BSC
.010 BSC
.015 BSC
MILLIMETERS
MIN
MAX
20.19
20.44
9.65
9.9
3.17
4.14
6.98
7.24
0.89
1.14
0.10
0.15
15.24 BSC
1.45
1.7
2.33
3.1
10
10.3
10
10.3
3.05
3.3
10
10.3
10
10.3
0.127 BSC
0.254 BSC
0.381 BSC
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
A
CASE 465E - 04
ISSUE F
NI - 400
MRF21045LR3
2X D
bbb M T A
M
B
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M−1994.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
M
1
2
2X K
ccc
M
T A
M
N
E
B
R
M
(LID)
ccc
(LID)
C
M
T A
M
B
M
M
B
M
F
3
A
T
A
(FLANGE)
M
aaa
M
T A
M
SEATING
PLANE
(INSULATOR)
B
M
H
S
(INSULATOR)
aaa
B
(FLANGE)
M
T A
B
DIM
A
B
C
D
E
F
H
K
M
N
R
S
aaa
bbb
ccc
INCHES
MIN
MAX
.395
.405
.395
.405
.125
.163
.275
.285
.035
.045
.004
.006
.057
.067
.092
.122
.395
.405
.395
.405
.395
.405
.395
.405
.005 REF
.010 REF
.015 REF
MILLIMETERS
MIN
MAX
10.03
10.29
10.03
10.29
3.18
4.14
6.98
7.24
0.89
1.14
0.10
0.15
1.45
1.70
2.34
3.10
10.03
10.29
10.03
10.29
10.03
10.29
10.03
10.29
0.127 REF
0.254 REF
0.38 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
CASE 465F - 04
ISSUE E
NI - 400S
MRF21045LSR3
MRF21045LR3 MRF21045LSR3
RF Device Data
Freescale Semiconductor
11
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© Freescale Semiconductor, Inc. 2006. All rights reserved.
MRF21045LR3 MRF21045LSR3
Document Number: MRF21045
Rev. 11, 5/2006
12
RF Device Data
Freescale Semiconductor