MRF5S19130H Rev. 1, 12/2004 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. • Typical 2 - Carrier N - CDMA Performance for VDD = 28 Volts, IDQ = 1200 mA, Pout = 26 Watts Avg., Full Frequency Band, IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF. Power Gain — 13 dB Drain Efficiency — 25% IM3 @ 2.5 MHz Offset — - 37 dBc @ 1.2288 MHz Bandwidth ACPR @ 885 kHz Offset — - 51 dB @ 30 kHz Bandwidth • Capable of Handling 10:1 VSWR, @ 28 Vdc, f1 = 1960 MHz, 110 Watts CW Output Power • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched, Controlled Q, for Ease of Use • Qualified Up to a Maximum of 32 V Operation • Integrated ESD Protection • Lower Thermal Resistance Package • Low Gold Plating Thickness on Leads, 40µ″ Nominal. • Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRF5S19130HR3 MRF5S19130HSR3 1990 MHz, 26 W AVG., 28 V 2 x N - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 465B - 03, STYLE 1 NI - 880 MRF5S19130HR3 CASE 465C - 02, STYLE 1 NI - 880S MRF5S19130HSR3 Table 1. Maximum Ratings Rating Symbol Value Unit Drain- Source Voltage VDSS - 0.5, +65 Vdc Gate- Source Voltage VGS - 0.5, +15 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 438 2.50 W W/°C Storage Temperature Range Tstg - 65 to +150 °C Operating Junction Temperature CW Operation TJ 200 °C CW 110 W Symbol Value (1,2) Unit Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 115 W CW Case Temperature 78°C, 26 W CW °C/W RθJC 0.40 0.46 1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 2. Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. Freescale Semiconductor, Inc., 2004. All rights reserved. RF Device Data Freescale Semiconductor MRF5S19130HR3 MRF5S19130HSR3 1 Table 3. ESD Protection Characteristics Test Conditions Class Human Body Model 2 (Minimum) Machine Model M4 (Minimum) Charge Device Model C7 (Minimum) Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 µAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 µAdc Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 µAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 200 µAdc) VGS(th) 2.5 2.8 3.5 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, ID = 1200 mAdc) VGS(Q) — 3.8 — Vdc Drain- Source On - Voltage (VGS = 10 Vdc, ID = 3 Adc) VDS(on) — 0.26 — Vdc Forward Transconductance (VDS = 10 Vdc, ID = 3 Adc) gfs — 7.5 — S Crss — 2.7 — pF Characteristic Off Characteristics On Characteristics Dynamic Characteristics Reverse Transfer Capacitance (1) (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1200 mA, Pout = 26 W Avg., f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz, 2 - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carriers. ACPR measured in 30 kHz Channel Bandwidth @ ±885 kHz Offset. IM3 measured in 1.2288 MHz Channel Bandwidth @ ±2.5 MHz Offset. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF. Power Gain Gps 12 13 — dB Drain Efficiency ηD 23 25 — % Intermodulation Distortion Adjacent Channel Power Ratio Input Return Loss IM3 — - 37 - 35 dBc ACPR — - 51 - 48 dBc IRL — - 15 -9 dB 1. Part is internally matched both on input and output. MRF5S19130HR3 MRF5S19130HSR3 2 RF Device Data Freescale Semiconductor B1 R1 VBIAS + R2 C10 VSUPPLY R3 + C9 C6 C7 C16 C17 C18 C19 + + + + + C20 C21 C22 C23 C24 C15 C8 RF OUTPUT Z22 Z23 Z24 Z13 RF INPUT DUT Z10 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z12 Z15 Z16 Z17 Z18 Z19 Z20 Z21 Z8 Z9 C25 Z14 C1 C2 C3 C4 Z11 C5 B2 R4 + C11 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10, Z11 Z12 C12 C14 C13 0.200″ x 0.085″ Microstrip 0.170″ x 0.085″ Microstrip 0.480″ x 0.085″ Microstrip 0.926″ x 0.085″ Microstrip 0.590″ x 0.085″ Microstrip 0.519″ x 0.955″ x 0.160″ Taper 0.022″ x 0.955″ Microstrip 0.046″ x 0.955″ Microstrip 0.080″ x 0.955″ Microstrip 1.280″ x 0.046″ Microstrip 0.053″ x 1.080″ Microstrip C26 C27 Z13, Z14 Z15 Z16 Z17 Z18 Z19 Z20 Z21 Z22 Z23 PCB C28 C29 C30 + + + + C31 C32 C33 C34 1.125″ x 0.068″ Microstrip 0.071″ x 1.080″ Microstrip 0.060″ x 1.080″ Microstrip 0.290″ x 1.080″ Microstrip 1.075″ x 0.825″ x 0.125″ Taper 0.635″ x 0.120″ Microstrip 0.185″ x 0.096″ Microstrip 0.414″ x 0.084″ Microstrip 0.040″ x 0.084″ Microstrip 0.199″ x 0.057″ Microstrip Arlon GX0300 - 55- 22, 0.03″, εr = 2.55 Figure 1. MRF5S19130HR3(SR3) Test Circuit Schematic Table 5. MRF5S19130HR3(SR3) Test Circuit Component Designations and Values Part Description Part Number Manufacturer B1, B2 Short RF Bead 95F786 Newark C1 0.8 pF Chip Capacitor 100B0R8BP 500X ATC C2, C4 0.6 – 4.5 pF Gigatrim Variable Capacitors 44F3358 Newark C3 2.2 pF Chip Capacitor 100B2R2BP 500X ATC C5 1.7 pF Chip Capacitor 100B1R7BP 500X ATC C8, C13 9.1 pF Chip Capacitors 100B9R1CP 500X ATC C9, C11 1 µF, 25 V Tantalum Capacitors 92F1845 Newark C10 47 µF, 50 V Electrolytic Capacitor 51F2913 Newark C6, C14, C17, C18, C19, C28, C29, C30 0.1 µF Chip Capacitors CDR33BX104AKWS Kemet C7, C12, C16, C27 1000 pF Chip Capacitors 100B102JP 500X ATC C15, C26 8.2 pF Chip Capacitors 100B8R2CP 500X ATC C20, C21, C22, C23, C31, C32, C33, C34 22 µF, 35 V Tantalum Capacitors 92F1853 Newark C24 470 µF, 63 V Electrolytic Capacitor 95F4579 Newark C25 6.2 pF Chip Capacitor 100B6R2CP 500X ATC R1 1 kW Chip Resistor D5534M07B1K00R Newark R2 560 kW Chip Resistor CR1206 564JT Newark R3, R4 12 W Chip Resistors RM73B2B120JT Garrett Electtonics MRF5S19130HR3 MRF5S19130HSR3 RF Device Data Freescale Semiconductor 3 C18 MRF5S19130 Rev 5 B1 C10 R3 R1 C19 C15 C20 C21 C24 C8 VGG VDD C16 C1 C3 C2 C7 C9 C17 C6 C5 C4 C14 C11 B2 C12 R4 CUT OUT AREA R2 C22 C23 C25 C28 C33 C34 C27 C13 C26 C31 C32 C29 C30 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. MRF5S19130HR3(SR3) Test Circuit Component Layout MRF5S19130HR3 MRF5S19130HSR3 4 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 12 11 10 IRL 9 8 30 ηD 25 VDD = 28 Vdc, Pout = 26 W (Avg.), IDQ = 1200 mA 2−Carrier N−CDMA, 2.5 MHz Carrier Spacing 1.2288 MHz Channel Bandwidth Peak/Avg. = 9.8 dB @ 0.01% Probability (CCDF) −10 −20 −30 IM3 7 6 20 −40 ACPR −50 −60 5 1900 1910 1920 1930 1940 1950 1960 1970 1980 1990 2000 −5 −10 −15 −20 −25 −30 IRL, INPUT RETURN LOSS (dB) 13 35 Gps IM3 (dBc), ACPR (dBc) G ps , POWER GAIN (dB) 14 ηD, DRAIN EFFICIENCY (%) 40 15 f, FREQUENCY (MHz) Figure 3. 2 - Carrier N - CDMA Broadband Performance 16 −25 15 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) VDD = 28 Vdc, f1 = 1958.75 MHz, f2 = 1961.25 MHz Two−Tone Measurement, 2.5 MHz Tone Spacing G ps , POWER GAIN (dB) IDQ = 1800 mA 14 1500 mA 13 12 1200 mA 900 mA 11 600 mA 10 VDD = 28 Vdc, f1 = 1958.75 MHz, f2 = 1961.25 MHz Two−Tone Measurement, 2.5 MHz Tone Spacing −35 IDQ = 1800 mA −40 1500 mA 600 mA −45 1200 mA −50 −55 900 mA −60 10 1 100 200 10 1 100 Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) PEP Figure 4. Two - Tone Power Gain versus Output Power Figure 5. Third Order Intermodulation Distortion versus Output Power −20 200 60 59 −25 −30 Pout , OUTPUT POWER (dBm) IMD, INTERMODULATION DISTORTION (dBc) −30 3rd Order −35 −40 5th Order −45 7th Order −50 VDD = 28 Vdc, Pout = 130 W (PEP), IDQ = 1200 mA Two−Tone Measurements, Center Frequency = 1960 MHz −55 −60 1 0.1 10 Ideal 58 57 56 P3dB = 53.11 dBm (205.57 W) 55 P1dB = 52.54 dBm (179.61 W) 54 53 52 Actual 51 50 VDD = 28 Vdc, IDQ = 1200 mA Pulsed CW, 8 µsec (on), 1 msec (off) Center Frequency = 1960 MHz 49 48 35 36 37 38 39 40 41 42 43 44 TWO−TONE SPACING (MHz) Pin, INPUT POWER (dBm) Figure 6. Intermodulation Distortion Products versus Tone Spacing Figure 7. Pulse CW Output Power versus Input Power 45 MRF5S19130HR3 MRF5S19130HSR3 RF Device Data Freescale Semiconductor 5 35 −30 VDD = 28 Vdc, IDQ = 1200 mA f1 = 1958.75 MHz, f2 = 1961.25 MHz 2 x N−CDMA, 2.5 MHz @ 1.2288 MHz Channel Bandwidth Peak/Avg. = 9.8 dB @ 0.01% Probability (CCDF) 30 25 IM3 ηD −35 −40 ACPR 20 15 Gps −45 −50 10 −55 5 −60 0 IM3 (dBc), ACPR (dBc) ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) TYPICAL CHARACTERISTICS −65 10 1 Pout, OUTPUT POWER (WATTS) AVG. (N−CDMA) Figure 8. 2 - Carrier N - CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power 0 109 −10 MTTF FACTOR (HOURS X AMPS2) 1.2288 MHz Channel BW −20 −IM3 @ 1.2288 MHz Integrated BW −30 +IM3 @ 1.2288 MHz Integrated BW (dB) −40 −50 −60 −70 −ACPR @ 30 kHz Integrated BW +ACPR @ 30 kHz Integrated BW −80 108 107 106 105 100 −90 120 140 160 180 200 220 TJ, JUNCTION TEMPERATURE (°C) −100 −7.5 −6 −4.5 −3 −1.5 0 1.5 3 4.5 f, FREQUENCY (MHz) Figure 9. 2 - Carrier N - CDMA Spectrum 6 7.5 This above graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than ±10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application. Figure 10. MTTF Factor versus Junction Temperature MRF5S19130HR3 MRF5S19130HSR3 6 RF Device Data Freescale Semiconductor Zo = 10 Ω f = 1990 MHz Zload f = 1930 MHz Zsource f = 1990 MHz f = 1930 MHz VDD = 28 V, IDQ = 1.2 A, Pout = 26 W (2−Carrier N−CDMA) Zload Ω f MHz Zsource Ω 1930 2.57 - j9.1 1.48 - j1.8 1960 2.35 - j7.6 1.28 - j1.5 1990 3.86 - j9.2 1.42 - j1.3 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 11. Series Equivalent Source and Load Impedance MRF5S19130HR3 MRF5S19130HSR3 RF Device Data Freescale Semiconductor 7 NOTES MRF5S19130HR3 MRF5S19130HSR3 8 RF Device Data Freescale Semiconductor NOTES MRF5S19130HR3 MRF5S19130HSR3 RF Device Data Freescale Semiconductor 9 NOTES MRF5S19130HR3 MRF5S19130HSR3 10 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS B G Q bbb 2X 1 M T A M B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4. DELETED M B (FLANGE) 3 K 2 bbb D T A M B M M M bbb M T A M B M ccc M T A M B M N R (INSULATOR) ccc M T A M aaa M T A M (LID) B S (LID) M (INSULATOR) B M H C F E T A DIM A B C D E F G H K M N Q R S aaa bbb ccc INCHES MIN MAX 1.335 1.345 0.535 0.545 0.147 0.200 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.872 0.888 0.871 0.889 .118 .138 0.515 0.525 0.515 0.525 0.007 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 13.6 13.8 3.73 5.08 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 22.15 22.55 19.30 22.60 3.00 3.51 13.10 13.30 13.10 13.30 0.178 REF 0.254 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE SEATING PLANE A (FLANGE) CASE 465B - 03 ISSUE B NI - 880 MRF5S19130HR3 B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 1 B (FLANGE) K 2 bbb M D T A M B M bbb M T A M B M T A M B R (INSULATOR) ccc M N ccc M M T A M M B S (LID) aaa M T A M B (LID) M (INSULATOR) M H C F E T A A DIM A B C D E F H K M N R S aaa bbb ccc INCHES MIN MAX 0.905 0.915 0.535 0.545 0.147 0.200 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.872 0.888 0.871 0.889 0.515 0.525 0.515 0.525 0.007 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 22.99 23.24 13.60 13.80 3.73 5.08 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 22.15 22.55 19.30 22.60 13.10 13.30 13.10 13.30 0.178 REF 0.254 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE SEATING PLANE (FLANGE) CASE 465C - 02 ISSUE A NI - 880S MRF5S19130HSR3 MRF5S19130HR3 MRF5S19130HSR3 RF Device Data Freescale Semiconductor 11 How to Reach Us: Home Page: www.freescale.com E - mail: [email protected] USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. Freescale Semiconductor, Inc. 2004. All rights reserved. MRF5S19130HR3 MRF5S19130HSR3 Document Number: MRF5S19130H Rev. 1, 12/2004 12 RF Device Data Freescale Semiconductor