Document Number: MRF21060 Rev. 9, 5/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF21060LR3 MRF21060LSR3 Designed for PCN and PCS base station applications with frequencies from 2100 to 2200 MHz. Suitable for W - CDMA, CDMA, TDMA, GSM and multicarrier amplifier applications. • Typical 2 - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 500 mA, Pout = 6 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain — 12.5 dB Drain Efficiency — 15% ACPR @ 5 MHz Offset — - 47 dBc in 3.84 MHz Channel Bandwidth • Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 60 Watts CW Output Power Features • Internally Matched for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Excellent Thermal Stability • Characterized with Series Equivalent Large - Signal Impedance Parameters • Available with Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ Nominal. • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch Reel. 2110 - 2170 MHz, 60 W, 28 V LATERAL N - CHANNEL RF POWER MOSFETs CASE 465 - 06, STYLE 1 NI - 780 MRF21060LR3 CASE 465A - 06, STYLE 1 NI - 780S MRF21060LSR3 Table 1. Maximum Ratings Rating Symbol Value Unit Drain- Source Voltage VDSS - 0.5, +65 Vdc Gate- Source Voltage VGS - 0.5, +15 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 180 0.98 W W/°C Storage Temperature Range Tstg - 65 to +150 °C Case Operating Temperature TC 150 °C Operating Junction Temperature TJ 200 °C Symbol Value Unit RθJC 1.02 °C/W Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Table 3. ESD Protection Characteristics Test Conditions Human Body Model Machine Model © Freescale Semiconductor, Inc., 2006. All rights reserved. RF Device Data Freescale Semiconductor Class 2 (Minimum) M3 (Minimum) MRF21060LR3 MRF21060LSR3 1 Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Symbol Min Typ Max Unit V(BR)DSS 65 — — Vdc Zero Gate Voltage Drain Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 6 μAdc Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 300 μAdc) VGS(th) 2 — 4 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, ID = 500 mAdc) VGS(Q) 2.5 3.9 4.5 Vdc Drain- Source On - Voltage (VGS = 10 Vdc, ID = 2 Adc) VDS(on) — 0.27 — Vdc Crss — 2.7 — pF Two - Tone Common - Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 60 W PEP, IDQ = 500 mA, f = 2110 MHz and 2170 MHz, Tone Spacing = 100 kHz) Gps 11 12.5 — dB Two - Tone Drain Efficiency (VDD = 28 Vdc, Pout = 60 W PEP, IDQ = 500 mA, f = 2110 MHz and 2170 MHz, Tone Spacing = 100 kHz) η 31 34 — % 3rd Order Intermodulation Distortion (VDD = 28 Vdc, Pout = 60 W PEP, IDQ = 500 mA, f = 2110 MHz and 2170 MHz, Tone Spacing = 100 kHz) IMD — - 30 - 28 dBc Input Return Loss (VDD = 28 Vdc, Pout = 60 W PEP, IDQ = 500 mA, f = 2110 MHz and 2170 MHz, Tone Spacing = 100 kHz) IRL — - 12 — dB P1dB — 60 — W Characteristic Off Characteristics Drain- Source Breakdown Voltage (VGS = 0 Vdc, ID = 10 μAdc) On Characteristics Dynamic Characteristics Reverse Transfer Capacitance (1) (VDS = 28 Vdc, VGS = 0, f = 1 MHz) Functional Tests (In Freescale Test Fixture, 50 ohm system) Pout, 1 dB Compression Point (VDD = 28 Vdc, Pout = 60 W CW, f = 2170 MHz) 1. Part is internally matched both on input and output. MRF21060LR3 MRF21060LSR3 2 RF Device Data Freescale Semiconductor R4 VGG VDD + + + R2 C1 C2 C3 C4 C5 Z8 Z1 Z2 Z3 Z4 Z5 Z6 C6 C7 C8 Z9 Z10 RF INPUT B3 B2 R3 R1 + Z11 Z12 Z13 Z14 Z15 RF OUTPUT C11 Z7 C12 C9 C10 B2 - B3 C1 C2, C7 C3, C8 C4, C5 C6 C9, C11 C10 C12 R1 R2 R3 R4 Z1 Z2 DUT Ferrite Beads, Fair Rite #2743019447 10 μF, 50 V Electrolytic Chip Capacitor, Panasonic #ECEV1HV100R 1000 pF Chip Capacitors, ATC #100B102JCA500X 0.10 μF Chip Capacitors, Kemet #CDR33BX104AKWS 4.7 pF Chip Capacitors, ATC #100B4R7JCA500X 22 μF, 35 V Tantalum Surface Mount Chip Capacitor, Sprague 9.1 pF Chip Capacitors, ATC #100B9R1JCA500X 0.8 pF - 8.0 pF Variable Capacitor, Johanson Gigatrim 0.4 pF - 4.5 pF Variable Capacitor, Johanson Gigatrim 1 kΩ, 1/4 W Fixed Film Chip Resistor, 0.08″ x 0.13″ 560 kΩ, 1/4 W Fixed Film Chip Resistor, 0.08″ x 0.13″ 10 Ω, 1/4 W Fixed Film Chip Resistor, 0.08″ x 0.13″ 10 Ω, 1/4 W Fixed Film Chip Resistor, 0.08″ x 0.13″ 0.743″ x 0.080″ Microstrip 0.070″ x 0.100″ Microstrip Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 Z11 Z12 Z13 Z14 Z15 Board 0.180″ x 0.100″ Microstrip 0.152″ x 0.293″ Microstrip 0.216″ x 0.100″ Microstrip 0.114″ x 0.410″ Microstrip 0.626″ x 0.872″ Microstrip 1.050″ x 0.050″ Microstrip 0.830″ x 0.050″ Microstrip 0.596″ x 1.040″ Microstrip 0.186″ x 0.315″ Microstrip 0.097″ x 0.525″ Microstrip 0.353″ x 0.138″ Microstrip 0.112″ x 0.080″ Microstrip 0.722″ x 0.080″ Microstrip 0.030″ Glass Teflon®, Arlon GX - 0300- 55- 22, 2 oz Cu Figure 1. MRF21060L Test Circuit Schematic MRF21060LR3 MRF21060LSR3 RF Device Data Freescale Semiconductor 3 TO GATE BIAS FEEDTHRU C1 R1 R3 C5 TO DRAIN BIAS FEEDTHRU C6 R4 B2 C2 C3 C4 R2 B3 C7 C8 C11 C9 C12 C10 MRF21060 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. MRF21060L Test Circuit Component Layout MRF21060LR3 MRF21060LSR3 4 RF Device Data Freescale Semiconductor −5 −10 30 IRL 25 15 −20 −25 Gps 10 −30 IMD −35 5 0 2080 2100 2120 2140 2160 f, FREQUENCY (MHz) 2180 −40 2200 VDD = 28 Vdc IDQ = 700 mA, f = 2140 MHz, Channel Spacing (Channel Bandwidth): 5 MHz @ 4.096 MHz BW 15 DTCH 40 35 −35 −40 25 15 700 mA −50 500 mA −60 −55 5 2 10 4 8 12 6 14 Pout, OUTPUT POWER (WATTS Avg.) W−CDMA 10 1.0 Pout, OUTPUT POWER (WATTS) PEP 100 VDD = 28 Vdc IDQ = 700 mA, f = 2140 MHz Two−Tone Measurement, 100 kHz Tone Spacing −30 −40 3rd Order −50 −60 5th Order 7th Order −70 −80 0.1 1.0 10 Pout, OUTPUT POWER (WATTS) PEP −22 14 Pout = 60 W (PEP), IDQ = 500 mA f = 2140 MHz Two−Tone Measurement, 100 kHz Tone Spacing 900 mA 13 13.5 G ps , POWER GAIN (dB) G ps , POWER GAIN (dB) 100 Figure 6. Intermodulation Distortion Products versus Output Power 14 700 mA 12 500 mA 10 0.1 −60 16 Figure 4. W - CDMA ACPR, Power Gain and Drain Efficiency versus Output Power Figure 5. Intermodulation Distortion versus Output Power 11 −50 Gps 10 IMD, INTERMODULATION DISTORTION (dBc) IMD, INTERMODULATION DISTORTION (dBc) 900 mA −45 −65 0.1 −45 −20 VDD = 28 Vdc f = 2140 MHz Two−Tone Measurement, 100 kHz Tone Spacing −40 −55 η ACPR 20 −25 −35 −30 30 Figure 3. Class AB Broadband Circuit Performance −30 −25 VDD = 28 Vdc f = 2140 MHz Two−Tone Measurement, 100 kHz Tone Spacing 1.0 10 Pout, OUTPUT POWER (WATTS) PEP Figure 7. Power Gain versus Output Power IMD −24 −26 −28 −30 13 −32 Gps −34 12.5 −36 100 12 22 24 26 28 30 −38 32 VDD, DRAIN VOLTAGE (VOLTS) Figure 8. Power Gain and Intermodulation Distortion versus Supply Voltage MRF21060LR3 MRF21060LSR3 RF Device Data Freescale Semiconductor 5 IMD, INTERMODULATION DISTORTION (dBc) 20 −15 VDD = 28 Vdc Pout = 60 W (PEP), IDQ = 500 mA Two−Tone Measurement, 100 kHz Tone Spacing −20 45 ADJACENT CHANNEL POWER RATIO (dB) η 35 η, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) 0 40 IRL, INPUT RETURN LOSS (dB) IMD, INTERMODULATION DISTORTION (dBc) η, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) TYPICAL CHARACTERISTICS f = 2110 MHz Zsource f = 2110 MHz 2170 MHz Zload 2170 MHz Zo = 5 Ω VDD = 28 V, IDQ = 500 mA, Pout = 60 W PEP f MHz Zsource Ω Zload Ω 2110 2.40 - j0.55 3.07 - j2.05 2140 2.26 - j0.87 2.89 - j2.38 2170 2.08 - j1.23 2.66 - j2.71 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 9. Series Equivalent Source and Load Impedance MRF21060LR3 MRF21060LSR3 6 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS B G Q bbb 2X 1 M T A M B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. M 3 B K 2 (FLANGE) D bbb T A M B M M M bbb N M T A M B M ccc M T A M M aaa M T A M M T A M B (LID) B S (LID) ccc H R (INSULATOR) M (INSULATOR) B M C F E A T A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4X Z (LID) B 1 K 2X 2 D bbb M T A M B M N (LID) ccc M R M T A M B M ccc M T A M M B M aaa M T A M S (INSULATOR) bbb M T A (LID) B M (INSULATOR) B M C 3 A A (FLANGE) T SEATING PLANE DIM A B C D E F H K M N R S U Z aaa bbb ccc INCHES MIN MAX 0.805 0.815 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 0.365 0.375 0.365 0.375 −−− 0.040 −−− 0.030 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 20.45 20.70 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 19.61 20.02 19.61 20.02 9.27 9.53 9.27 9.52 −−− 1.02 −−− 0.76 0.127 REF 0.254 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE H E MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 19.66 19.96 19.60 20.00 3.00 3.51 9.27 9.53 9.27 9.52 0.127 REF 0.254 REF 0.381 REF CASE 465 - 06 ISSUE G NI - 780 MRF21060LR3 4X U (FLANGE) B INCHES MIN MAX 1.335 1.345 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 .118 .138 0.365 0.375 0.365 0.375 0.005 REF 0.010 REF 0.015 REF STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE SEATING PLANE (FLANGE) (FLANGE) DIM A B C D E F G H K M N Q R S aaa bbb ccc CASE 465A - 06 ISSUE H NI - 780S MRF21060LSR3 F MRF21060LR3 MRF21060LSR3 RF Device Data Freescale Semiconductor 7 How to Reach Us: Home Page: www.freescale.com E - mail: [email protected] USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006. All rights reserved. MRF21060LR3 MRF21060LSR3 Document Number: MRF21060 8Rev. 9, 5/2006 RF Device Data Freescale Semiconductor