FREESCALE MRF9100LR3

Freescale Semiconductor
Technical Data
Document Number: MRF9100
Rev. 5, 5/2006
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
MRF9100LR3
MRF9100LSR3
Designed for GSM and EDGE base station applications with frequencies
from 921 to 960 MHz, the high gain and broadband performance of these
devices make them ideal for large - signal, common source amplifier applications in 26 volt base station equipment.
• On - Die Integrated Input Match
• Typical Performance @ Full GSM Band, 921 to 960 MHz, 26 Volts
Output Power, P1dB — 110 Watts
Power Gain @ P1dB — 16.5 dB
Efficiency @ P1dB — 53%
• Capable of Handling 5:1 VSWR, @ 26 Vdc, 921 MHz,
100 Watts CW Output Power
Features
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
40μ″ Nominal.
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
900 MHz, 110 W, 26 V
GSM/EDGE
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465 - 06, STYLE 1
NI - 780
MRF9100LR3
CASE 465A - 06, STYLE 1
NI - 780S
MRF9100LSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain- Source Voltage
VDSS
- 0.5. +65
Vdc
Gate- Source Voltage
VGS
- 0.5. +15
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
175
1.0
W
W/°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
TJ
200
°C
Symbol
Value
Unit
RθJC
1.0
°C/W
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF9100LR3 MRF9100LSR3
1
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M3 (Minimum)
Charge Device Model
C7 (Minimum)
Table 4. Electrical Characteristics (TC = 25°C, 50 ohm system unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Drain- Source Breakdown Voltage
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Current
(VDS = 26 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate- Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 500 μAdc)
VGS(th)
2
—
4
Vdc
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 800 mAdc)
VGS(Q)
3
—
5
Vdc
Drain- Source On - Voltage
(VGS = 10 Vdc, ID = 2 Adc)
VDS(on)
—
0.19
0.5
Vdc
Crss
—
1.0
—
pF
Output Power, 1 dB Compression Point, CW
(VDD = 26 Vdc, IDQ = 800 mA, f = 960 MHz)
P1dB
100
110
—
W
Common- Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 100 W CW, IDQ = 800 mA,
f = 960 MHz)
Gps
16
17
—
dB
Drain Efficiency
(VDD = 26 Vdc, Pout = 100 W CW, IDQ = 800 mA,
f = 960 MHz)
η
47
51
—
%
Input Return Loss
(VDD = 26 Vdc, Pout = 100 W CW, IDQ = 800 mA,
f1 = 921 MHz and 960 MHz,
f2 = 940 MHz)
IRL
Third Order Intermodulation Distortion
(VDD = 26 Vdc, Pout = 100 W PEP, IDQ = 800 mA,
f = Full GSM Band 921 - 960 MHz, Tone Spacing = 100 kHz)
IMD
Characteristic
Off Characteristics
On Characteristics
Dynamic Characteristics (1)
Reverse Transfer Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Functional Tests (In Freescale Test Fixture)
dB
—
—
—
- 20
- 10
—
—
- 30
—
dBc
1. Part is internally matched both on input and output.
MRF9100LR3 MRF9100LSR3
2
RF Device Data
Freescale Semiconductor
C14
R1
+
VGG
R2
RF
INPUT
C8
C6
R3
Z1
Z2
C1
Z3
C2
Z4
Z5
C3
Z7
C5
Z6
C9
Z13
Z8
Z9
C11
Z10
DUT
C4
VDD
C15
Z11
C12
C7
Z12
RF
OUTPUT
C13
C10
Figure 1. MRF9100L Test Circuit Schematic
Table 5. MRF9100L Test Circuit Component Designations and Values
Designators
Description
C1, C13
22 pF, 100B Chip Capacitors, ATC #100B220GW
C2, C12
2.2 pF, 100B Chip Capacitors, ATC #100B2R2BW
C3
6.8 pF, 100B Chip Capacitor, ATC #100B6R8CW
C4, C5
10 pF, 100B Chip Capacitors, ATC #100B100GW
C6, C14
33 pF, 100B Chip Capacitors, ATC #100B330JW
C7, C8, C9, C10
4.7 pF, 100B Chip Capacitors, ATC #100B4R7BW
C11
2.7 pF, 100B Chip Capacitor, ATC #100B2R7BW
C15
10 μF, 35 V Tantalum Chip Capacitor, Vishay - Sprague #293D106X9035D
R1, R2
10 kW, 1/8 W Chip Resistors (0805)
R3
1 kW, 1/8 W Chip Resistor (0805)
Z1
0.495″ x 0.087″ Microstrip
Z2
0.657″ x 0.087″ Microstrip
Z3
0.324″ x 0.087″ Microstrip
Z4
0.429″ x 0.087″ Microstrip
Z5
0.250″ x 0.790″ Microstrip
Z6
0.535″ x 0.790″ Microstrip
Z7
0.312″ x 0.790″ Microstrip
Z8
0.409″ x 0.790″ Microstrip
Z9
0.432″ x 0.087″ Microstrip
Z10
0.220″ x 0.087″ Microstrip
Z11
0.828″ x 0.087″ Microstrip
Z12
0.485″ x 0.087″ Microstrip
Z13
1.602″ x 0.087″ Microstrip
Substrate
Taconic TLX8, Thickness 0.8 mm
MRF9100LR3 MRF9100LSR3
RF Device Data
Freescale Semiconductor
3
C14
R1
R2
C15
C7
C6
C1
R3 C4
WP
C2
C3
C9
C11
WP
C10
C5
C12
C13
C8
MRF9100
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 2. MRF9100L Test Circuit Component Layout
MRF9100LR3 MRF9100LSR3
4
RF Device Data
Freescale Semiconductor
+
C3
+
C1
C13
R1
U1
VGG
1
P1
R2
R3
R5
T1
+
C5
R4
VDD
+
C14
C4
R6
C2
Z6
Z7
C9
RF
INPUT
Z1
Z2
C6
Z11
Z4
C7
Z3
Z9
C8
Z10
C11
Z5
Z12
Z13
RF
OUTPUT
C12
Z8
C10
Figure 3. MRF9100L Demo Board Schematic
MRF9100LR3 MRF9100LSR3
RF Device Data
Freescale Semiconductor
5
Table 6. GSM 900 Optimized Demo Board Component Designations and Values
Designators
Description
C1
1.0 μF Chip Capacitor, AVX #08053G105ZATEA (0805)
C2, C5
33 pF Chip Capacitors, AVX #08051J330GBT, ACCU - P (0805)
C3, C13, C14
22 μF, 35 V Tantalum Chip Capacitors, Kemet #T491x226K035AS4394
C4
220 μF, 63 V Electrolytic Capacitor Radial, Philips #13668221
C6
5.6 pF Chip Capacitor, AVX #08051J5R6CBT, ACCU - P (0805)
C7
4.7 pF Chip Capacitor, AVX #08051J4R7CBT, ACCU - P (0805)
C8
22 pF Chip Capacitor, AVX #08051J220GBT, ACCU - P (0805)
C9, C10
3.9 pF Chip Capacitors, AVX #08051J3R9BBT, ACCU - P (0805)
C11
2.2 pF Chip Capacitor, AVX #08051J2R2BBT, ACCU - P (0805)
C12
33 pF, 100B Chip Capacitor, ATC #100B330JW
P1
5.0 kW Potentiometer CMS Cermet multi - turn, Bourns #3224W
R1
10 W, 1/8 W Chip Resistor (0805)
R2
1.0 kW, 1/8 W Chip Resistor (0805)
R3
1.2 kW, 1/8 W Chip Resistor (0805)
R4
2.2 kW, 1/8 W Chip Resistor (0805)
R5
100 W, 1/8 W Chip Resistor (0805)
R6
1.0 W, 1/8 W Chip Resistor (0805)
T1
NPN Bipolar Transistor, SOT - 23, #BC847
U1
Voltage Regulator, Micro - 8, #LP2951
Z1
0.916″ x 0.042″ Microstrip
Z2
0.169″ x 0.042″ Microstrip
Z3
0.212″ x 0.042″ Microstrip
Z4
0.090″ x 0.465″ Microstrip
Z5
0.465″ x 0.842″ Microstrip
Z6
1.776″ x 0.059″ Microstrip
Z7
1.802″ x 0.059″ Microstrip
Z8
1.094″ x 0.592″ Microstrip
Z9
0.085″ x 0.042″ Microstrip
Z10
0.198″ x 0.042″ Microstrip
Z11
0.253″ x 0.191″ + 0.292″ x 0.061″ Microstrip
Z12
0.181″ x 0.042″ Microstrip
Z13
0.282″ x 0.042″ Microstrip
Substrate
Taconic RF35, Thickness 0.5 mm, εr = 3.5
MRF9100LR3 MRF9100LSR3
6
RF Device Data
Freescale Semiconductor
Ground
Vbias
Vdrain
C1 R1 U1
C3
R2
R4
T1 R3
C2
P1
R5
C4
C14
C5
R6
C13
C9
Strap
C7
C8
C11
C6
C12
Strap
C10
MRF9100
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 4. MRF9100L Demo Board Component Layout
MRF9100LR3 MRF9100LSR3
RF Device Data
Freescale Semiconductor
7
TYPICAL CHARACTERISTICS
160
19
56
865 MHz
G ps , POWER GAIN (dB)
η
120
18
IDQ = 1000 mA
17
IDQ = 600 mA
16
VDD = 26 Vdc
f = 920 MHz
TC = 25_C
15
1
10
80
28
60
21
40
14
VDD = 26 Vdc
IDQ = 800 mA
TC = 25_C
20
0
1000
100
0
1
20
100 W
16
−10
IRL
Pout = 30 W
825
−15
−20
875
900
925
950
25_C
85_C
16
15
14
VDD = 26 Vdc
IDQ = 800 mA
f = 920 MHz
975
−25
1000
12
1000
Figure 8. Power Gain versus Output Power
50
40
30
6
η
20
4
10
EVM
h, DRAIN EFFICIENCY (%)
VDD = 28 Vdc
IDQ = 800 mA
f = 945 MHz
−50
SPECTRAL REGROWTH (dBc)
10
EVM (%)
100
Pout, OUTPUT POWER (WATTS)
Figure 7. Power Gain and Input Return Loss
versus Frequency
2
10
1
f, FREQUENCY (MHz)
8
0
6
17
13
100 W
850
5
TC = −20_C
18
G ps , POWER GAIN (dB)
−5
IRL, INPUT RETURN LOSS (dB)
G ps , POWER GAIN (dB)
Gps
10
800
4
19
0
VDD = 26 Vdc
IDQ = 800 mA
TC = 25_C
3
Figure 6. Output Power and Efficiency versus
Input Power
Pout = 30 W
14
2
7
Pin, INPUT POWER (WATTS)
Figure 5. Power Gain versus Output Power
18
35
Pout
Pout, OUTPUT POWER (WATTS)
12
42
865 MHz
100
IDQ = 800 mA
49
960 MHz
960 MHz
η, DRAIN EFFICIENCY (%)
Pout , OUTPUT POWER (WATTS)
140
IDQ = 1200 mA
VDD = 28 Vdc
IDQ = 800 mA
f = 945 MHz
−55
−60
@ 400 kHz
−65
−70
−75
@ 600 kHz
−80
0
0
1
10
Pout, OUTPUT POWER (WATTS) AVG.
Figure 9. EVM and Efficiency versus Output
Power
100
−85
0
10
1
Pout, OUTPUT POWER (WATTS) AVG.
100
Figure 10. Spectral Regrowth versus Output
Power
MRF9100LR3 MRF9100LSR3
8
RF Device Data
Freescale Semiconductor
Zload
f = 840 MHz
f = 1000 MHz
Zo = 5 Ω
Zsource
f = 1000 MHz
f = 840 MHz
VDD = 26 V, IDQ = 800 mA, Pout = 110 W (CW)
f
MHz
Zsource
Ω
Zload
Ω
840
2.04 - j0.57
1.62 + j1.65
880
2.20 - j0.16
1.88 + j2.45
920
2.00 + j0.44
1.79 + j2.40
960
2.16 + j0.25
1.47 + j1.82
1000
2.62 + j0.25
1.58 + j1.52
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under Test
Input
Matching
Network
Z
source
Z
load
Figure 11. Series Equivalent Source and Load Impedance
MRF9100LR3 MRF9100LSR3
RF Device Data
Freescale Semiconductor
9
NOTES
MRF9100LR3 MRF9100LSR3
10
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
B
G
Q
bbb
2X
1
M
T A
M
B
M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
3
B
K
2
(FLANGE)
D
bbb
T A
M
B
M
M
M
bbb
N
M
T A
B
M
M
ccc
M
T A
M
M
aaa
M
T A
M
(LID)
B
S
(LID)
ccc
H
R
(INSULATOR)
M
T A
B
M
M
(INSULATOR)
B
M
C
F
E
A
T
A
SEATING
PLANE
DIM
A
B
C
D
E
F
G
H
K
M
N
Q
R
S
aaa
bbb
ccc
INCHES
MIN
MAX
1.335
1.345
0.380
0.390
0.125
0.170
0.495
0.505
0.035
0.045
0.003
0.006
1.100 BSC
0.057
0.067
0.170
0.210
0.774
0.786
0.772
0.788
.118
.138
0.365
0.375
0.365
0.375
0.005 REF
0.010 REF
0.015 REF
MILLIMETERS
MIN
MAX
33.91
34.16
9.65
9.91
3.18
4.32
12.57
12.83
0.89
1.14
0.08
0.15
27.94 BSC
1.45
1.70
4.32
5.33
19.66
19.96
19.60
20.00
3.00
3.51
9.27
9.53
9.27
9.52
0.127 REF
0.254 REF
0.381 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
(FLANGE)
CASE 465 - 06
ISSUE G
NI - 780
MRF9100LR3
4X U
(FLANGE)
4X Z
(LID)
B
1
K
2X
2
B
(FLANGE)
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
D
bbb
M
T A
M
B
M
N
ccc
M
R
(LID)
M
T A
M
B
M
M
B
M
ccc
M
T A
M
aaa
M
T A
M
S
(INSULATOR)
bbb
M
T A
(LID)
B
M
(INSULATOR)
B
M
H
C
3
E
A
A
F
T
SEATING
PLANE
(FLANGE)
CASE 465A - 06
ISSUE H
NI - 780S
MRF9100LSR3
DIM
A
B
C
D
E
F
H
K
M
N
R
S
U
Z
aaa
bbb
ccc
INCHES
MIN
MAX
0.805
0.815
0.380
0.390
0.125
0.170
0.495
0.505
0.035
0.045
0.003
0.006
0.057
0.067
0.170
0.210
0.774
0.786
0.772
0.788
0.365
0.375
0.365
0.375
−−−
0.040
−−−
0.030
0.005 REF
0.010 REF
0.015 REF
MILLIMETERS
MIN
MAX
20.45
20.70
9.65
9.91
3.18
4.32
12.57
12.83
0.89
1.14
0.08
0.15
1.45
1.70
4.32
5.33
19.61
20.02
19.61
20.02
9.27
9.53
9.27
9.52
−−−
1.02
−−−
0.76
0.127 REF
0.254 REF
0.381 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
5. SOURCE
MRF9100LR3 MRF9100LSR3
RF Device Data
Freescale Semiconductor
11
How to Reach Us:
Home Page:
www.freescale.com
E - mail:
[email protected]
USA/Europe or Locations Not Listed:
Freescale Semiconductor
Technical Information Center, CH370
1300 N. Alma School Road
Chandler, Arizona 85224
+1 - 800- 521- 6274 or +1 - 480- 768- 2130
[email protected]
Europe, Middle East, and Africa:
Freescale Halbleiter Deutschland GmbH
Technical Information Center
Schatzbogen 7
81829 Muenchen, Germany
+44 1296 380 456 (English)
+46 8 52200080 (English)
+49 89 92103 559 (German)
+33 1 69 35 48 48 (French)
[email protected]
Japan:
Freescale Semiconductor Japan Ltd.
Headquarters
ARCO Tower 15F
1 - 8 - 1, Shimo - Meguro, Meguro - ku,
Tokyo 153 - 0064
Japan
0120 191014 or +81 3 5437 9125
[email protected]
Asia/Pacific:
Freescale Semiconductor Hong Kong Ltd.
Technical Information Center
2 Dai King Street
Tai Po Industrial Estate
Tai Po, N.T., Hong Kong
+800 2666 8080
[email protected]
For Literature Requests Only:
Freescale Semiconductor Literature Distribution Center
P.O. Box 5405
Denver, Colorado 80217
1 - 800- 441- 2447 or 303 - 675- 2140
Fax: 303 - 675- 2150
[email protected]
Information in this document is provided solely to enable system and software
implementers to use Freescale Semiconductor products. There are no express or
implied copyright licenses granted hereunder to design or fabricate any integrated
circuits or integrated circuits based on the information in this document.
Freescale Semiconductor reserves the right to make changes without further notice to
any products herein. Freescale Semiconductor makes no warranty, representation or
guarantee regarding the suitability of its products for any particular purpose, nor does
Freescale Semiconductor assume any liability arising out of the application or use of
any product or circuit, and specifically disclaims any and all liability, including without
limitation consequential or incidental damages. “Typical” parameters that may be
provided in Freescale Semiconductor data sheets and/or specifications can and do
vary in different applications and actual performance may vary over time. All operating
parameters, including “Typicals”, must be validated for each customer application by
customer’s technical experts. Freescale Semiconductor does not convey any license
under its patent rights nor the rights of others. Freescale Semiconductor products are
not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life,
or for any other application in which the failure of the Freescale Semiconductor product
could create a situation where personal injury or death may occur. Should Buyer
purchase or use Freescale Semiconductor products for any such unintended or
unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all
claims, costs, damages, and expenses, and reasonable attorney fees arising out of,
directly or indirectly, any claim of personal injury or death associated with such
unintended or unauthorized use, even if such claim alleges that Freescale
Semiconductor was negligent regarding the design or manufacture of the part.
Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc.
All other product or service names are the property of their respective owners.
© Freescale Semiconductor, Inc. 2006. All rights reserved.
MRF9100LR3 MRF9100LSR3
Document Number: MRF9100
Rev. 5, 5/2006
12
RF Device Data
Freescale Semiconductor