Freescale Semiconductor Technical Data Document Number: MRF9100 Rev. 5, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9100LR3 MRF9100LSR3 Designed for GSM and EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance of these devices make them ideal for large - signal, common source amplifier applications in 26 volt base station equipment. • On - Die Integrated Input Match • Typical Performance @ Full GSM Band, 921 to 960 MHz, 26 Volts Output Power, P1dB — 110 Watts Power Gain @ P1dB — 16.5 dB Efficiency @ P1dB — 53% • Capable of Handling 5:1 VSWR, @ 26 Vdc, 921 MHz, 100 Watts CW Output Power Features • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Excellent Thermal Stability • Characterized with Series Equivalent Large - Signal Impedance Parameters • Available with Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ Nominal. • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. 900 MHz, 110 W, 26 V GSM/EDGE LATERAL N - CHANNEL RF POWER MOSFETs CASE 465 - 06, STYLE 1 NI - 780 MRF9100LR3 CASE 465A - 06, STYLE 1 NI - 780S MRF9100LSR3 Table 1. Maximum Ratings Rating Symbol Value Unit Drain- Source Voltage VDSS - 0.5. +65 Vdc Gate- Source Voltage VGS - 0.5. +15 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 175 1.0 W W/°C Storage Temperature Range Tstg - 65 to +150 °C Case Operating Temperature TC 150 °C Operating Junction Temperature TJ 200 °C Symbol Value Unit RθJC 1.0 °C/W Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case © Freescale Semiconductor, Inc., 2006. All rights reserved. RF Device Data Freescale Semiconductor MRF9100LR3 MRF9100LSR3 1 Table 3. ESD Protection Characteristics Test Conditions Class Human Body Model 1 (Minimum) Machine Model M3 (Minimum) Charge Device Model C7 (Minimum) Table 4. Electrical Characteristics (TC = 25°C, 50 ohm system unless otherwise noted) Symbol Min Typ Max Unit Drain- Source Breakdown Voltage (VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Current (VDS = 26 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 500 μAdc) VGS(th) 2 — 4 Vdc Gate Quiescent Voltage (VDS = 26 Vdc, ID = 800 mAdc) VGS(Q) 3 — 5 Vdc Drain- Source On - Voltage (VGS = 10 Vdc, ID = 2 Adc) VDS(on) — 0.19 0.5 Vdc Crss — 1.0 — pF Output Power, 1 dB Compression Point, CW (VDD = 26 Vdc, IDQ = 800 mA, f = 960 MHz) P1dB 100 110 — W Common- Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 100 W CW, IDQ = 800 mA, f = 960 MHz) Gps 16 17 — dB Drain Efficiency (VDD = 26 Vdc, Pout = 100 W CW, IDQ = 800 mA, f = 960 MHz) η 47 51 — % Input Return Loss (VDD = 26 Vdc, Pout = 100 W CW, IDQ = 800 mA, f1 = 921 MHz and 960 MHz, f2 = 940 MHz) IRL Third Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 100 W PEP, IDQ = 800 mA, f = Full GSM Band 921 - 960 MHz, Tone Spacing = 100 kHz) IMD Characteristic Off Characteristics On Characteristics Dynamic Characteristics (1) Reverse Transfer Capacitance (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Functional Tests (In Freescale Test Fixture) dB — — — - 20 - 10 — — - 30 — dBc 1. Part is internally matched both on input and output. MRF9100LR3 MRF9100LSR3 2 RF Device Data Freescale Semiconductor C14 R1 + VGG R2 RF INPUT C8 C6 R3 Z1 Z2 C1 Z3 C2 Z4 Z5 C3 Z7 C5 Z6 C9 Z13 Z8 Z9 C11 Z10 DUT C4 VDD C15 Z11 C12 C7 Z12 RF OUTPUT C13 C10 Figure 1. MRF9100L Test Circuit Schematic Table 5. MRF9100L Test Circuit Component Designations and Values Designators Description C1, C13 22 pF, 100B Chip Capacitors, ATC #100B220GW C2, C12 2.2 pF, 100B Chip Capacitors, ATC #100B2R2BW C3 6.8 pF, 100B Chip Capacitor, ATC #100B6R8CW C4, C5 10 pF, 100B Chip Capacitors, ATC #100B100GW C6, C14 33 pF, 100B Chip Capacitors, ATC #100B330JW C7, C8, C9, C10 4.7 pF, 100B Chip Capacitors, ATC #100B4R7BW C11 2.7 pF, 100B Chip Capacitor, ATC #100B2R7BW C15 10 μF, 35 V Tantalum Chip Capacitor, Vishay - Sprague #293D106X9035D R1, R2 10 kW, 1/8 W Chip Resistors (0805) R3 1 kW, 1/8 W Chip Resistor (0805) Z1 0.495″ x 0.087″ Microstrip Z2 0.657″ x 0.087″ Microstrip Z3 0.324″ x 0.087″ Microstrip Z4 0.429″ x 0.087″ Microstrip Z5 0.250″ x 0.790″ Microstrip Z6 0.535″ x 0.790″ Microstrip Z7 0.312″ x 0.790″ Microstrip Z8 0.409″ x 0.790″ Microstrip Z9 0.432″ x 0.087″ Microstrip Z10 0.220″ x 0.087″ Microstrip Z11 0.828″ x 0.087″ Microstrip Z12 0.485″ x 0.087″ Microstrip Z13 1.602″ x 0.087″ Microstrip Substrate Taconic TLX8, Thickness 0.8 mm MRF9100LR3 MRF9100LSR3 RF Device Data Freescale Semiconductor 3 C14 R1 R2 C15 C7 C6 C1 R3 C4 WP C2 C3 C9 C11 WP C10 C5 C12 C13 C8 MRF9100 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. MRF9100L Test Circuit Component Layout MRF9100LR3 MRF9100LSR3 4 RF Device Data Freescale Semiconductor + C3 + C1 C13 R1 U1 VGG 1 P1 R2 R3 R5 T1 + C5 R4 VDD + C14 C4 R6 C2 Z6 Z7 C9 RF INPUT Z1 Z2 C6 Z11 Z4 C7 Z3 Z9 C8 Z10 C11 Z5 Z12 Z13 RF OUTPUT C12 Z8 C10 Figure 3. MRF9100L Demo Board Schematic MRF9100LR3 MRF9100LSR3 RF Device Data Freescale Semiconductor 5 Table 6. GSM 900 Optimized Demo Board Component Designations and Values Designators Description C1 1.0 μF Chip Capacitor, AVX #08053G105ZATEA (0805) C2, C5 33 pF Chip Capacitors, AVX #08051J330GBT, ACCU - P (0805) C3, C13, C14 22 μF, 35 V Tantalum Chip Capacitors, Kemet #T491x226K035AS4394 C4 220 μF, 63 V Electrolytic Capacitor Radial, Philips #13668221 C6 5.6 pF Chip Capacitor, AVX #08051J5R6CBT, ACCU - P (0805) C7 4.7 pF Chip Capacitor, AVX #08051J4R7CBT, ACCU - P (0805) C8 22 pF Chip Capacitor, AVX #08051J220GBT, ACCU - P (0805) C9, C10 3.9 pF Chip Capacitors, AVX #08051J3R9BBT, ACCU - P (0805) C11 2.2 pF Chip Capacitor, AVX #08051J2R2BBT, ACCU - P (0805) C12 33 pF, 100B Chip Capacitor, ATC #100B330JW P1 5.0 kW Potentiometer CMS Cermet multi - turn, Bourns #3224W R1 10 W, 1/8 W Chip Resistor (0805) R2 1.0 kW, 1/8 W Chip Resistor (0805) R3 1.2 kW, 1/8 W Chip Resistor (0805) R4 2.2 kW, 1/8 W Chip Resistor (0805) R5 100 W, 1/8 W Chip Resistor (0805) R6 1.0 W, 1/8 W Chip Resistor (0805) T1 NPN Bipolar Transistor, SOT - 23, #BC847 U1 Voltage Regulator, Micro - 8, #LP2951 Z1 0.916″ x 0.042″ Microstrip Z2 0.169″ x 0.042″ Microstrip Z3 0.212″ x 0.042″ Microstrip Z4 0.090″ x 0.465″ Microstrip Z5 0.465″ x 0.842″ Microstrip Z6 1.776″ x 0.059″ Microstrip Z7 1.802″ x 0.059″ Microstrip Z8 1.094″ x 0.592″ Microstrip Z9 0.085″ x 0.042″ Microstrip Z10 0.198″ x 0.042″ Microstrip Z11 0.253″ x 0.191″ + 0.292″ x 0.061″ Microstrip Z12 0.181″ x 0.042″ Microstrip Z13 0.282″ x 0.042″ Microstrip Substrate Taconic RF35, Thickness 0.5 mm, εr = 3.5 MRF9100LR3 MRF9100LSR3 6 RF Device Data Freescale Semiconductor Ground Vbias Vdrain C1 R1 U1 C3 R2 R4 T1 R3 C2 P1 R5 C4 C14 C5 R6 C13 C9 Strap C7 C8 C11 C6 C12 Strap C10 MRF9100 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 4. MRF9100L Demo Board Component Layout MRF9100LR3 MRF9100LSR3 RF Device Data Freescale Semiconductor 7 TYPICAL CHARACTERISTICS 160 19 56 865 MHz G ps , POWER GAIN (dB) η 120 18 IDQ = 1000 mA 17 IDQ = 600 mA 16 VDD = 26 Vdc f = 920 MHz TC = 25_C 15 1 10 80 28 60 21 40 14 VDD = 26 Vdc IDQ = 800 mA TC = 25_C 20 0 1000 100 0 1 20 100 W 16 −10 IRL Pout = 30 W 825 −15 −20 875 900 925 950 25_C 85_C 16 15 14 VDD = 26 Vdc IDQ = 800 mA f = 920 MHz 975 −25 1000 12 1000 Figure 8. Power Gain versus Output Power 50 40 30 6 η 20 4 10 EVM h, DRAIN EFFICIENCY (%) VDD = 28 Vdc IDQ = 800 mA f = 945 MHz −50 SPECTRAL REGROWTH (dBc) 10 EVM (%) 100 Pout, OUTPUT POWER (WATTS) Figure 7. Power Gain and Input Return Loss versus Frequency 2 10 1 f, FREQUENCY (MHz) 8 0 6 17 13 100 W 850 5 TC = −20_C 18 G ps , POWER GAIN (dB) −5 IRL, INPUT RETURN LOSS (dB) G ps , POWER GAIN (dB) Gps 10 800 4 19 0 VDD = 26 Vdc IDQ = 800 mA TC = 25_C 3 Figure 6. Output Power and Efficiency versus Input Power Pout = 30 W 14 2 7 Pin, INPUT POWER (WATTS) Figure 5. Power Gain versus Output Power 18 35 Pout Pout, OUTPUT POWER (WATTS) 12 42 865 MHz 100 IDQ = 800 mA 49 960 MHz 960 MHz η, DRAIN EFFICIENCY (%) Pout , OUTPUT POWER (WATTS) 140 IDQ = 1200 mA VDD = 28 Vdc IDQ = 800 mA f = 945 MHz −55 −60 @ 400 kHz −65 −70 −75 @ 600 kHz −80 0 0 1 10 Pout, OUTPUT POWER (WATTS) AVG. Figure 9. EVM and Efficiency versus Output Power 100 −85 0 10 1 Pout, OUTPUT POWER (WATTS) AVG. 100 Figure 10. Spectral Regrowth versus Output Power MRF9100LR3 MRF9100LSR3 8 RF Device Data Freescale Semiconductor Zload f = 840 MHz f = 1000 MHz Zo = 5 Ω Zsource f = 1000 MHz f = 840 MHz VDD = 26 V, IDQ = 800 mA, Pout = 110 W (CW) f MHz Zsource Ω Zload Ω 840 2.04 - j0.57 1.62 + j1.65 880 2.20 - j0.16 1.88 + j2.45 920 2.00 + j0.44 1.79 + j2.40 960 2.16 + j0.25 1.47 + j1.82 1000 2.62 + j0.25 1.58 + j1.52 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 11. Series Equivalent Source and Load Impedance MRF9100LR3 MRF9100LSR3 RF Device Data Freescale Semiconductor 9 NOTES MRF9100LR3 MRF9100LSR3 10 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS B G Q bbb 2X 1 M T A M B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 3 B K 2 (FLANGE) D bbb T A M B M M M bbb N M T A B M M ccc M T A M M aaa M T A M (LID) B S (LID) ccc H R (INSULATOR) M T A B M M (INSULATOR) B M C F E A T A SEATING PLANE DIM A B C D E F G H K M N Q R S aaa bbb ccc INCHES MIN MAX 1.335 1.345 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 .118 .138 0.365 0.375 0.365 0.375 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 19.66 19.96 19.60 20.00 3.00 3.51 9.27 9.53 9.27 9.52 0.127 REF 0.254 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE (FLANGE) CASE 465 - 06 ISSUE G NI - 780 MRF9100LR3 4X U (FLANGE) 4X Z (LID) B 1 K 2X 2 B (FLANGE) NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. D bbb M T A M B M N ccc M R (LID) M T A M B M M B M ccc M T A M aaa M T A M S (INSULATOR) bbb M T A (LID) B M (INSULATOR) B M H C 3 E A A F T SEATING PLANE (FLANGE) CASE 465A - 06 ISSUE H NI - 780S MRF9100LSR3 DIM A B C D E F H K M N R S U Z aaa bbb ccc INCHES MIN MAX 0.805 0.815 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 0.365 0.375 0.365 0.375 −−− 0.040 −−− 0.030 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 20.45 20.70 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 19.61 20.02 19.61 20.02 9.27 9.53 9.27 9.52 −−− 1.02 −−− 0.76 0.127 REF 0.254 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE MRF9100LR3 MRF9100LSR3 RF Device Data Freescale Semiconductor 11 How to Reach Us: Home Page: www.freescale.com E - mail: [email protected] USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006. All rights reserved. MRF9100LR3 MRF9100LSR3 Document Number: MRF9100 Rev. 5, 5/2006 12 RF Device Data Freescale Semiconductor