FREESCALE MRF19030LR3

Freescale Semiconductor
Technical Data
Document Number: MRF19030
Rev. 12, 5/2006
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
MRF19030LR3
MRF19030LSR3
Designed for class AB PCN and PCS base station applications with
frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and
multicarrier amplifier applications.
• CDMA Performance @ 1990 MHz, 26 Volts
IS - 95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Thru 13
885 kHz — - 47 dBc in 30 kHz BW
1.25 MHz — - 55 dBc in 12.5 kHz BW
2.25 MHz — - 55 dBc in 1 MHz BW
Output Power — 4.5 Watts Avg.
Power Gain — 13.5 dB
Efficiency — 17%
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 1960 MHz, 30 Watts CW
Output Power
Features
• Internally Matched for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Low Gold Plating Thickness on Leads, 40μ″ Nominal.
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 Inch Reel.
1930- 1990 MHz, 30 W, 26 V
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465E - 04, STYLE 1
NI - 400
MRF19030LR3
CASE 465F - 04, STYLE 1
NI - 400S
MRF19030LSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain- Source Voltage
VDSS
- 0.5, +65
Vdc
Gate- Source Voltage
VGS
- 0.5, +15
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
83.3
0.48
W
W/°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
TJ
200
°C
Symbol
Value
Unit
RθJC
2.1
°C/W
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Table 3. ESD Protection Characteristics
Test Conditions
Human Body Model
Machine Model
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
Class
2 (Minimum)
M3 (Minimum)
MRF19030LR3 MRF19030LSR3
1
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
V(BR)DSS
65
—
—
Vdc
Zero Gate Voltage Drain Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate- Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 100 μAdc)
VGS(th)
2
3
4
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 300 mA)
VGS(Q)
2
3.3
4.5
Vdc
Drain- Source On - Voltage
(VGS = 10 Vdc, ID = 1 Adc)
VDS(on)
—
0.29
0.4
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 1 Adc)
gfs
—
2
—
S
Input Capacitance (Including Input Matching Capacitor in Package) (1)
(VDS = 26 Vdc, VGS = 0, f = 1 MHz)
Ciss
—
98.5
—
pF
Output Capacitance (1)
(VDS = 26 Vdc, VGS = 0, f = 1 MHz)
Coss
—
37
—
pF
Reverse Transfer Capacitance
(VDS = 26 Vdc, VGS = 0, f = 1 MHz)
Crss
—
1.3
—
pF
Two - Tone Common - Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 300 mA,
f1 = 1960.0 MHz, f2 = 1960.1 MHz)
Gps
—
13
—
dB
Two - Tone Drain Efficiency
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 300 mA,
f1 = 1960.0 MHz, f2 = 1960.1 MHz)
η
—
36
—
%
3rd Order Intermodulation Distortion
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 300 mA,
f1 = 1960.0 MHz, f2 = 1960.1 MHz)
IMD
—
- 31
—
dBc
Input Return Loss
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 300 mA,
f1 = 1960.0 MHz, f2 = 1960.1 MHz)
IRL
—
- 13
—
dB
Two - Tone Common - Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 300 mA, f1 = 1930.0 MHz,
f2 = 1930.1 MHz and f1 = 1990.0 MHz, f2 = 1990.1 MHz)
Gps
12
13
—
dB
Two - Tone Drain Efficiency
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 300 mA, f1 = 1930.0 MHz,
f2 = 1930.1 MHz and f1 = 1990.0 MHz, f2 = 1990.1 MHz)
η
33
36
—
%
3rd Order Intermodulation Distortion
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 300 mA, f1 = 1930.0 MHz,
f2 = 1930.1 MHz and f1 = 1990.0 MHz, f2 = 1990.1 MHz)
IMD
—
- 31
- 28
dBc
Input Return Loss
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 300 mA, f1 = 1930.0 MHz,
f2 = 1930.1 MHz and f1 = 1990.0 MHz, f2 = 1990.1 MHz)
IRL
—
- 13
-9
dB
Characteristic
Off Characteristics
Drain- Source Breakdown Voltage
(VGS = 0 Vdc, ID = 20 μA)
On Characteristics
Dynamic Characteristics
Functional Tests (In Freescale Test Fixture, 50 ohm system)
1. Part is internally matched both on input and output.
MRF19030LR3 MRF19030LSR3
2
RF Device Data
Freescale Semiconductor
VBIAS
+
C2
B1
B2
R1
R2
R3
C3
C4
+
R4
C6
C9
B3
B4
B5
R5
R6
R7
C5
Z6
Z7
Z2
Z3
C1
Z9
Z8
Z5
Z1
+
C8
L3
L2
RF
INPUT
VSUPPLY
Z10
RF
OUTPUT
C7
Z4
DUT
L4
C10
L1
B1 - B5
C1, C7
C2, C8
C3, C5
C4, C6
C9
C10
L1 - L4
R1 - R7
Z1
Z2
Short Ferrite Beads
10 pF Chip Capacitors
470 μF, 35 V Electrolytic Capacitors
0.1 μF Chip Capacitors
5.1 pF Chip Capacitors
22 μF Tantalum Chip Capacitor
0.4 - 2.5 pF Variable Capacitor, Johanson Gigatrim
12.5 nH Inductors
12 Ω Chip Resistors (0805)
0.080″ x 0.595″ Microstrip
0.080″ x 0.600″ Microstrip
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Z10
Substrate
0.080″ x 0.480″ Microstrip
0.325″ x 0.280″ Microstrip
0.510″ x 0.200″ Microstrip
0.510″ x 0.200″ Microstrip
0.325″ x 0.280″ Microstrip
0.080″ x 0.480″ Microstrip
0.080″ x 0.530″ Microstrip
0.080″ x 0.671″ Microstrip
0.030″ x 3.00″ x 5.00″ Glass Teflon®,
Arlon
Figure 1. MRF19030LR3(SR3) Test Circuit Schematic
MRF19030LR3 MRF19030LSR3
RF Device Data
Freescale Semiconductor
3
C2
C8
C3
R1
B2
B1
R2
C5
R6
B4
C4
R3 R4
B3 R5
C9
L2
L3
C6
C7
C1
L1
R7
B5
L4
C10
MRF19030
Rev. 0
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 2. MRF19030LR3(SR3) Test Circuit Component Layout
MRF19030LR3 MRF19030LSR3
4
RF Device Data
Freescale Semiconductor
IRL
40
−15
η
20
−20
VDD = 26 Vdc
IDQ = 300 mA, Pout = 30 W (PEP)
Two−Tone Measurement, 100 kHz Tone Spacing
−25
Gps
10
−30
IMD
0
1900
1940
1960
1980
f, FREQUENCY (MHz)
1920
2000
−35
2020
VDD = 26 Vdc
IDQ = 350 mA, f = 1960 MHz, Channel Spacing
(Channel Bandwidth): 885 kHz (30 kHz),
1.25 MHz (12.5 kHz), 2.25 MHz (1 MHz)
40
35
−50
2.25 MHz
25
885 kHz
15
Gps
−80
10
CDMA 9 Channels Forward
PILOT:0, PAGING:1, TRAFFIC:8−13, SYNC:32
−90
5
0
200 mA
−40
300 mA
IMD, INTERMODULATION DISTORTION (dBc)
IMD, INTERMODULATION DISTORTION (dBc)
2
6
8
10
4
Pout, OUTPUT POWER (WATTS Avg.) CDMA
−100
12
Figure 4. CDMA ACPR, Power Gain and
Drain Efficiency versus Output Power
400 mA
−45
350 mA
−50
300 mA
−55
1.0
10
Pout, OUTPUT POWER (WATTS) PEP
100
VDD = 26 Vdc, IDQ = 300 mA, f = 1960 MHz
Two−Tone Measurement,
100 kHz Tone Spacing
−30
3rd Order
−40
−50
5th Order
7th Order
−60
−70
−80
1.0
Figure 5. Intermodulation Distortion
versus Output Power
100
10
Pout, OUTPUT POWER (WATTS) PEP
Figure 6. Intermodulation Distortion Products
versus Output Power
15
−22
14
f = 1960 MHz
IDQ = 300 mA, Pout = 30 W (PEP)
Two−Tone Measurement, 100 kHz Tone Spacing
13.5
400 mA
G ps , POWER GAIN (dB)
G ps , POWER GAIN (dB)
−70
−20
VDD = 26 Vdc, f = 1960 MHz
Two−Tone Measurement,
100 kHz Tone Spacing
−35
350 mA
300 mA
13
300 mA
12
−60
η
20 1.25 MHz
−25
14
−40
30
Figure 3. Class AB Broadband Circuit Performance
−30
−30
200 mA
−24
−26
Gps
−28
−30
13
IMD
−32
−34
12.5
VDD = 26 Vdc, f = 1960 MHz
Two−Tone Measurement, 100 kHz Tone Spacing
11
1.0
10
Pout, OUTPUT POWER (WATTS) PEP
Figure 7. Power Gain versus Output Power
−36
100
12
20
22
24
26
28
30
32
−38
34
VDD, DRAIN VOLTAGE (VOLTS)
Figure 8. Power Gain and
Intermodulation Distortion versus Supply Voltage
MRF19030LR3 MRF19030LSR3
RF Device Data
Freescale Semiconductor
5
IMD, INTERMODULATION DISTORTION (dBc)
30
−20
45
ADJACENT CHANNEL POWER RATION (dB)
−10
η, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB)
50
IRL, INPUT RETURN LOSS (dB)
IMD, INTERMODULATION DISTORTION (dBc)
η, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB)
TYPICAL CHARACTERISTICS
f = 1990 MHz
f = 1990 MHz
Zload
Zsource
f = 1930 MHz
f = 1930 MHz
Zo = 25 Ω
VDD = 26 V, IDQ = 300 mA, Pout = 30 W PEP
f
MHz
Zsource
Ω
Zload
Ω
1930
10.57 - j7.69
5.81 - j5.01
1960
10.54 - j7.43
5.84 - j4.67
1990
10.47 - j7.21
5.84 - j4.35
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under Test
Input
Matching
Network
Z
source
Z
load
Figure 9. Series Equivalent Source and Load Impedance
MRF19030LR3 MRF19030LSR3
6
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
2X
G
bbb
Q
M
T B
M
A
M
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1994.
3. DIMENSION H IS MEASURED 0.030 (0.762)
AWAY FROM PACKAGE BODY.
4. INFORMATION ONLY: CORNER BREAK (4X) TO
BE .060±.005 (1.52±0.13) RADIUS OR .06±.005
(1.52±0.13) x 45° CHAMFER.
B
SEE NOTE 4
1
2X K
3
B
2
2X D
bbb
M
T A
M
B
M
N (LID)
ccc
M
T A
B
M
ccc
M
aaa
M
T A
M
B
M
A
M
F
T
M
(INSULATOR)
B
M
R (LID)
C
E
T A
M
S
(INSULATOR)
SEATING
PLANE
aaa
M
T A
M
H
B
M
DIM
A
B
C
D
E
F
G
H
K
M
N
Q
R
S
aaa
bbb
ccc
INCHES
MIN
MAX
.795
.805
.380
.390
.125
.163
.275
.285
.035
.045
.004
.006
.600 BSC
.057
.067
.092
.122
.395
.405
.395
.405
.120
.130
.395
.405
.395
.405
.005 BSC
.010 BSC
.015 BSC
MILLIMETERS
MIN
MAX
20.19
20.44
9.65
9.9
3.17
4.14
6.98
7.24
0.89
1.14
0.10
0.15
15.24 BSC
1.45
1.7
2.33
3.1
10
10.3
10
10.3
3.05
3.3
10
10.3
10
10.3
0.127 BSC
0.254 BSC
0.381 BSC
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
A
CASE 465E - 04
ISSUE F
NI - 400
MRF19030LR3
2X D
bbb M T A
M
B
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M−1994.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
M
1
2
2X K
ccc
M
T A
M
N
E
B
R
M
(LID)
ccc
(LID)
C
M
T A
M
B
M
M
B
M
F
3
A
T
A
(FLANGE)
M
aaa
M
T A
M
SEATING
PLANE
(INSULATOR)
B
M
H
S
(INSULATOR)
aaa
B
(FLANGE)
M
B
T A
DIM
A
B
C
D
E
F
H
K
M
N
R
S
aaa
bbb
ccc
INCHES
MIN
MAX
.395
.405
.395
.405
.125
.163
.275
.285
.035
.045
.004
.006
.057
.067
.092
.122
.395
.405
.395
.405
.395
.405
.395
.405
.005 REF
.010 REF
.015 REF
MILLIMETERS
MIN
MAX
10.03
10.29
10.03
10.29
3.18
4.14
6.98
7.24
0.89
1.14
0.10
0.15
1.45
1.70
2.34
3.10
10.03
10.29
10.03
10.29
10.03
10.29
10.03
10.29
0.127 REF
0.254 REF
0.38 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
CASE 465F - 04
ISSUE E
NI - 400S
MRF19030LSR3
MRF19030LR3 MRF19030LSR3
RF Device Data
Freescale Semiconductor
7
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© Freescale Semiconductor, Inc. 2006. All rights reserved.
MRF19030LR3 MRF19030LSR3
Document Number: MRF19030
8Rev. 12, 5/2006
RF Device Data
Freescale Semiconductor