FREESCALE MRF21030LSR3

Freescale Semiconductor
Technical Data
Document Number: MRF21030
Rev. 12, 5/2006
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
MRF21030LR3
MRF21030LSR3
Designed for PCN and PCS base station applications with frequencies from
2000 to 2200 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
applications. To be used in Class AB for PCN - PCS/cellular radio and WLL
applications.
• Wideband CDMA Performance: - 45 dB ACPR @ 4.096 MHz, 28 Volts
Output Power — 3.5 Watts
Power Gain — 14 dB
Efficiency — 15%
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2110 MHz, 30 Watts CW
Output Power
Features
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Low Gold Plating Thickness on Leads, 40μ″ Nominal.
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 Inch Reel.
2200 MHz, 30 W, 28 V
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465E - 04, STYLE 1
NI - 400
MRF21030LR3
CASE 465F - 04, STYLE 1
NI - 400S
MRF21030LSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain- Source Voltage
VDSS
- 0.5, +65
Vdc
Gate- Source Voltage
VGS
- 0.5, +15
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
83.3
0.48
W
W/°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
TJ
200
°C
Symbol
Value
Unit
RθJC
2.1
°C/W
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Table 3. ESD Protection Characteristics
Test Conditions
Human Body Model
Machine Model
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
Class
2 (Minimum)
M3 (Minimum)
MRF21030LR3 MRF21030LSR3
1
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
V(BR)DSS
65
—
—
Vdc
Zero Gate Voltage Drain Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate- Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 100 μAdc)
VGS(th)
2
3
4
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 250 mA)
VGS(Q)
2
3.3
4.5
Vdc
Drain- Source On - Voltage
(VGS = 10 Vdc, ID = 1 Adc)
VDS(on)
—
0.29
0.4
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 1 Adc)
gfs
—
2
—
S
Input Capacitance (Including Input Matching Capacitor in Package) (1)
(VDS = 28 Vdc, VGS = 0, f = 1 MHz)
Ciss
—
98.5
—
pF
Output Capacitance (1)
(VDS = 28 Vdc, VGS = 0, f = 1 MHz)
Coss
—
37
—
pF
Reverse Transfer Capacitance
(VDS = 28 Vdc, VGS = 0, f = 1 MHz)
Crss
—
1.3
—
pF
Two - Tone Common - Source Amplifier Power Gain
(VDD = 28 Vdc, Pout = 30 W PEP, IDQ = 250 mA,
f1 = 2140.0 MHz, f2 = 2140.1 MHz)
Gps
—
13
—
dB
Two - Tone Drain Efficiency
(VDD = 28 Vdc, Pout = 30 W PEP, IDQ = 250 mA,
f1 = 2140.0 MHz, f2 = 2140.1 MHz)
η
—
33
—
%
3rd Order Intermodulation Distortion
(VDD = 28 Vdc, Pout = 30 W PEP, IDQ = 250 mA,
f1 = 2140.0 MHz, f2 = 2140.1 MHz)
IMD
—
- 30
—
dBc
Input Return Loss
(VDD = 28 Vdc, Pout = 30 W PEP, IDQ = 250 mA,
f1 = 2140.0 MHz, f2 = 2140.1 MHz)
IRL
—
- 13
—
dB
Two - Tone Common - Source Amplifier Power Gain
(VDD = 28 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 2110.0 MHz,
f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz)
Gps
12
13
—
dB
Two - Tone Drain Efficiency
(VDD = 28 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 2110.0 MHz,
f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz)
η
31
33
—
%
3rd Order Intermodulation Distortion
(VDD = 28 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 2110.0 MHz,
f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz)
IMD
—
- 30
- 27.5
dBc
Input Return Loss
(VDD = 28 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 2110.0 MHz,
f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz)
IRL
—
- 13
-9
dB
Characteristic
Off Characteristics
Drain- Source Breakdown Voltage
(VGS = 0 Vdc, ID = 20 μA)
On Characteristics
Dynamic Characteristics
Functional Tests (In Freescale Test Fixture, 50 ohm system)
1. Part is internally matched both on input and output.
MRF21030LR3 MRF21030LSR3
2
RF Device Data
Freescale Semiconductor
B1
VBIAS
+
C6
B2
+
R1
C5
C4
C8
C10
Z1
Z2
Z3
Z4
Z5
Z6
C2
C3
C1
B1, B2
C1
C2
C3
C4
C5, C12
C6, C13
C7, C8
C9
C10
C11
L1, L2
R1, R2
+
R2
C12
C13
L2
L1
RF
INPUT
C11
VSUPPLY
Z7
Z8
Z9
RF
OUTPUT
Z10
C9
DUT
C7
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
PCB
Short Ferrite Beads
1 pF Chip Capacitor
4.7 pF Chip Capacitor
0.5 pF Chip Capacitor
3.9 pF Chip Capacitor
0.1 μF Chip Capacitors
470 μF, 63 V Electrolytic Chip Capacitors
0.3 pF Chip Capacitors
3.6 pF Chip Capacitor
22 μF Tantalum Chip Capacitor
5.1 pF Chip Capacitor
12.5 nH Inductors
12 Ω Chip Resistors (1206)
0.153″ x 0.087″ Microstrip
0.509″ x 0.156″ Microstrip
0.572″ x 0.087″ Microstrip
0.509″ x 0.232″ Microstrip
0.277″ x 0.143″ Microstrip
0.200″ x 0.305″ Microstrip
0.200″ x 0.511″ Microstrip
0.510″ x 0.328″ Microstrip
0.608″ x 0.081″ Microstrip
Taconic TLX8, 30 mils, εr = 2.55
Figure 1. MRF21030LR3(SR3) Test Circuit Schematic
C13
+
V BIAS
+
C5
C6
R2
B2
R1
B1
C10
Ground
WB1
C3
WB2
C8
L1
CUT OUT AREA
C1
VSUPPLY
C11
C4
C2
C12
L2
C9
C7
Ground
MRF21030
Rev 1
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 2. MRF21030LR3(SR3) Test Circuit Component Layout
MRF21030LR3 MRF21030LSR3
RF Device Data
Freescale Semiconductor
3
50
−10
IRL
30
−15
η
−20
VDD = 28 Vdc, Pout = 30 W (PEP), IDQ = 250 mA
Two−Tone Measurement, 100 kHz Tone Spacing
20
−25
Gps
10
−30
IMD
0
2080
2100
2120
2140
2160
f, FREQUENCY (MHz)
2180
−35
2200
VDD = 28 Vdc, IDQ = 250 mA, f = 2140 MHz
Channel Spacing (Channel Bandwidth):
4.096 MHz (5 MHz)
25
20
−40
ACPR
15
−50
η
−60
5
0
−55
1.0
IMD, INTERMODULATION DISTORTION (dBc)
IMD, INTERMODULATION DISTORTION (dBc)
−50
6
−70
−20
VDD = 28 Vdc, f = 2140 MHz
Two−Tone Measurement,
−30
100 kHz Tone Spacing
−45
1
3
2
4
5
Pout, OUTPUT POWER (WATTS Avg.) CDMA
Figure 4. CDMA ACPR, Power Gain and
Drain Efficiency versus Output Power
−25
−40
Gps
10
Figure 3. Class AB Broadband Circuit Performance
−35
−30
200 mA
250 mA
400 mA
300 mA
350 mA
10
Pout, OUTPUT POWER (WATTS) PEP
100
3rd Order
VDD = 28 Vdc, IDQ = 250 mA, f = 2140 MHz
Two−Tone Measurement,
100 kHz Tone Spacing
−30
−40
7th Order
−50
5th Order
−60
−70
1.0
Figure 5. Intermodulation Distortion
versus Output Power
100
10
Pout, OUTPUT POWER (WATTS) PEP
Figure 6. Intermodulation Distortion Products
versus Output Power
15
16
−22
14.5
400 mA
15
G ps , POWER GAIN (dB)
G ps , POWER GAIN (dB)
−24
350 mA
300 mA
14
250 mA
200 mA
VDD = 28 Vdc, f = 2140 MHz
Two−Tone Measurement, 100 kHz Tone Spacing
13
1.0
10
Pout, OUTPUT POWER (WATTS) PEP
Figure 7. Power Gain versus Output Power
100
−26
Gps
−28
14
−30
IMD
−32
13.5
−34
Pout = 30 W (PEP)
IDQ = 250 mA, f = 2140 MHz
Two−Tone Measurement, 100 kHz Tone Spacing
13
20
22
24
26
28
30
−36
32
−38
34
VDD, DRAIN VOLTAGE (VOLTS)
Figure 8. Power Gain and
Intermodulation Distortion versus Supply Voltage
MRF21030LR3 MRF21030LSR3
4
RF Device Data
Freescale Semiconductor
IMD, INTERMODULATION DISTORTION (dBc)
40
−20
30
ADJACENT CHANNEL POWER RATIO (dB)
−5
η, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB)
60
IRL, INPUT RETURN LOSS (dB)
IMD, INTERMODULATION DISTORTION (dBc)
η, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB)
TYPICAL CHARACTERISTICS
Zo = 25 Ω
f = 2170 MHz
Zload
f = 2110 MHz
f = 2170 MHz
Zsource
f = 2110 MHz
VDD = 28 V, IDQ = 250 mA, Pout = 30 W PEP
f
MHz
Zsource
Ω
2110
15.3 - j9.4
3.7 - j0.78
2140
14.6 - j9.4
3.4 - j0.37
2170
14.3 - j8.8
3.0 + j0.13
Zload
Ω
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under Test
Input
Matching
Network
Z
source
Z
load
Figure 9. Series Equivalent Source and Load Impedance
MRF21030LR3 MRF21030LSR3
RF Device Data
Freescale Semiconductor
5
NOTES
MRF21030LR3 MRF21030LSR3
6
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
2X
G
bbb
Q
M
T B
M
A
M
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1994.
3. DIMENSION H IS MEASURED 0.030 (0.762)
AWAY FROM PACKAGE BODY.
4. INFORMATION ONLY: CORNER BREAK (4X) TO
BE .060±.005 (1.52±0.13) RADIUS OR .06±.005
(1.52±0.13) x 45° CHAMFER.
B
SEE NOTE 4
1
2X K
3
B
2
2X D
bbb
M
T A
M
B
M
N (LID)
ccc
M
T A
B
M
ccc
M
aaa
M
T A
M
B
M
A
M
F
S
(INSULATOR)
SEATING
PLANE
T
M
(INSULATOR)
B
M
R (LID)
C
E
T A
M
aaa
M
T A
M
H
B
M
DIM
A
B
C
D
E
F
G
H
K
M
N
Q
R
S
aaa
bbb
ccc
INCHES
MIN
MAX
.795
.805
.380
.390
.125
.163
.275
.285
.035
.045
.004
.006
.600 BSC
.057
.067
.092
.122
.395
.405
.395
.405
.120
.130
.395
.405
.395
.405
.005 BSC
.010 BSC
.015 BSC
MILLIMETERS
MIN
MAX
20.19
20.44
9.65
9.9
3.17
4.14
6.98
7.24
0.89
1.14
0.10
0.15
15.24 BSC
1.45
1.7
2.33
3.1
10
10.3
10
10.3
3.05
3.3
10
10.3
10
10.3
0.127 BSC
0.254 BSC
0.381 BSC
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
A
CASE 465E - 04
ISSUE F
NI - 400
MRF21030LR3
2X D
bbb M T A
M
B
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M−1994.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
M
1
2
2X K
ccc
M
T A
M
N
E
B
R
M
(LID)
ccc
(LID)
C
M
T A
M
B
M
M
B
M
F
3
A
T
A
(FLANGE)
M
aaa
M
T A
M
SEATING
PLANE
(INSULATOR)
B
M
H
S
(INSULATOR)
aaa
B
(FLANGE)
M
T A
B
DIM
A
B
C
D
E
F
H
K
M
N
R
S
aaa
bbb
ccc
INCHES
MIN
MAX
.395
.405
.395
.405
.125
.163
.275
.285
.035
.045
.004
.006
.057
.067
.092
.122
.395
.405
.395
.405
.395
.405
.395
.405
.005 REF
.010 REF
.015 REF
MILLIMETERS
MIN
MAX
10.03
10.29
10.03
10.29
3.18
4.14
6.98
7.24
0.89
1.14
0.10
0.15
1.45
1.70
2.34
3.10
10.03
10.29
10.03
10.29
10.03
10.29
10.03
10.29
0.127 REF
0.254 REF
0.38 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
CASE 465F - 04
ISSUE E
NI - 400S
MRF21030LSR3
MRF21030LR3 MRF21030LSR3
RF Device Data
Freescale Semiconductor
7
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© Freescale Semiconductor, Inc. 2006. All rights reserved.
MRF21030LR3 MRF21030LSR3
Document Number: MRF21030
8Rev. 12, 5/2006
RF Device Data
Freescale Semiconductor