Freescale Semiconductor Technical Data Document Number: MRF6S19100H Rev. 4, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N - CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications. • Typical 2 - Carrier N - CDMA Performance: VDD = 28 Volts, IDQ = 900 mA, Pout = 22 Watts Avg., Full Frequency Band, IS - 95 (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain — 16.1 dB Drain Efficiency — 28% IM3 @ 2.5 MHz Offset — - 37 dBc in 1.2288 MHz Channel Bandwidth ACPR @ 885 kHz Offset — - 51 dBc in 30 kHz Channel Bandwidth • Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 100 Watts CW Output Power Features • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • Lower Thermal Resistance Package • Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications • Low Gold Plating Thickness on Leads, 40μ″ Nominal. • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRF6S19100HR3 MRF6S19100HSR3 1930- 1990 MHz, 22 W AVG., 28 V 2 x N - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 465 - 06, STYLE 1 NI - 780 MRF6S19100HR3 CASE 465A - 06, STYLE 1 NI - 780S MRF6S19100HSR3 Table 1. Maximum Ratings Rating Symbol Value Unit Drain- Source Voltage VDSS - 0.5, +68 Vdc Gate- Source Voltage VGS - 0.5, +12 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 398 2.3 W W/°C Storage Temperature Range Tstg - 65 to +150 °C Case Operating Temperature TC 150 °C Operating Junction Temperature TJ 200 °C Symbol Value (1,2) Unit Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 100 W CW Case Temperature 77°C, 22 W CW RθJC 0.44 0.50 °C/W 1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2006. All rights reserved. RF Device Data Freescale Semiconductor MRF6S19100HR3 MRF6S19100HSR3 1 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22 - A114) 3A (Minimum) Machine Model (per EIA/JESD22 - A115) B (Minimum) Charge Device Model (per JESD22 - C101) IV (Minimum) Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 250 μAdc) VGS(th) 1 2 3 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, ID = 900 mAdc) VGS(Q) 2 2.8 4 Vdc Drain- Source On - Voltage (VGS = 10 Vdc, ID = 2.2 Adc) VDS(on) 0.1 0.21 0.3 Vdc gfs — 5.3 — S Crss — 1.5 — pF Characteristic Off Characteristics On Characteristics Forward Transconductance (VDS = 10 Vdc, ID = 2 Adc) Dynamic Characteristics (1) Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 900 mA, Pout = 22 W Avg., f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz, 2 - carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carriers. ACPR measured in 30 kHz Channel Bandwidth @ ±885 kHz Offset. IM3 measured in 1.2288 MHz Channel Bandwidth @ ±2.5 MHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain Gps 15 16.1 18 dB Drain Efficiency ηD 26 28 — % Intermodulation Distortion Adjacent Channel Power Ratio Input Return Loss IM3 — - 37 - 35 dBc ACPR — - 51 - 48 dBc IRL — - 15 -9 dB 1. Part is internally matched both on input and output. MRF6S19100HR3 MRF6S19100HSR3 2 RF Device Data Freescale Semiconductor B1 VBIAS Z1 + + + C8 C9 C10 C11 C12 + R2 RF INPUT C7 + Z2 C5 Z3 Z7 C4 R1 Z4 Z5 Z8 Z9 Z10 Z11 VSUPPLY RF OUTPUT C6 Z6 C3 C1 Z1 Z2 Z3 Z4 Z5 Z6 DUT C2 0.130″ x 0.084″ Microstrip 0.360″ x 0.084″ Microstrip 0.260″ x 0.084″ Microstrip 0.950″ x 0.084″ Microstrip 0.457″ x 0.940″ Microstrip 0.083″ x 0.940″ Microstrip Z7 Z8 Z9 Z10 Z11 PCB 0.091″ x 0.900″ Microstrip 0.493″ x 0.900″ Microstrip 0.440″ x 0.195″ Microstrip 0.470″ x 0.084″ Microstrip 0.735″ x 0.084″ Microstrip Arlon GX - 0300- 55- 22, 0.030″, εr = 2.55 Figure 1. MRF6S19100HR3(HSR3) Test Circuit Schematic Table 5. MRF6S19100HR3(HSR3) Test Circuit Component Designations and Values Part Description Part Number Manufacturer B1 RF Bead 2743019447 Fair- Rite C1, C2 0.6- 4.5 pF Variable Capacitors, Gigatronics 27271SL Johanson Dielectrics C3 15 pF Chip Capacitor 100B150CP500X ATC C4, C7 5.6 pF Chip Capacitors 100B5R6JP500X Kemet C5 1 μF, 50 V Tantalum Chip Capacitor T491C105K050AS Kemet C6 43 pF Chip Capacitor 100B430CP500X ATC C8, C10 22 μF, 35 V Tantalum Chip Capacitors T491X226K035AS Kemet C9 10 μF, 35 V Tantalum Chip Capacitor T491C106K035AS Kemet C11 0.1 μF Chip Capacitor (1825) C1825C14J5RAC Kemet C12 100 μF, 50 V Electrolytic Capacitor, Radial MCR50V107M8X11 Multicomp R1 12 Ω, 1/4 W Chip Resistor (1206) CRCW120612R0F100 Vishay R2 2 kW, 1/4 W Chip Resistor (1206) CRCW12062001F100 Vishay MRF6S19100HR3 MRF6S19100HSR3 RF Device Data Freescale Semiconductor 3 C8 C9 B1 VGG R2 C7 C5 C2 C11 C12 C4 C3 + VDD - C10 C6 CUT OUT AREA C1 R1 MRF6S19100H/HS Rev 2 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. MRF6S19100HR3(HSR3) Test Circuit Component Layout MRF6S19100HR3 MRF6S19100HSR3 4 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 27 Gps 16.2 25 16 IM3 15.8 IRL 15.6 VDD = 28 Vdc, Pout = 22 W (Avg.), IDQ = 900 mA 2−Carrier N−CDMA, 2.5 MHz Carrier Spacing −35 1.2288 MHz Channel Bandwidth, PAR = 9.8 dB @ 0.01% Probability (CCDF) −41 −47 ACPR 15.4 1930 1940 1950 1960 1970 1980 −53 1990 −5 −10 −15 −20 IRL, INPUT RETURN LOSS (dB) Gps, POWER GAIN (dB) 16.4 ηD, DRAIN EFFICIENCY (%) 29 ηD IM3 (dBc), ACPR (dBc) 16.6 f, FREQUENCY (MHz) Figure 3. 2 - Carrier N - CDMA Broadband Performance @ Pout = 22 Watts Avg. 40 Gps, POWER GAIN (dB) 16 15.8 15.6 Gps IM3 15.4 15.2 15 14.8 1930 38 VDD = 28 Vdc, Pout = 44 W (Avg.), IDQ = 900 mA 2−Carrier N−CDMA, 2.5 MHz Carrier Spacing 1.2288 MHz Channel Bandwidth, PAR = 9.8 dB @ 0.01% Probability (CCDF) −25 −30 IRL −35 ACPR −40 1940 1950 1960 1980 1970 −45 1990 −5 −10 −15 −20 IRL, INPUT RETURN LOSS (dB) ηD, DRAIN EFFICIENCY (%) 42 ηD IM3 (dBc), ACPR (dBc) 16.2 f, FREQUENCY (MHz) Figure 4. 2 - Carrier N - CDMA Broadband Performance @ Pout = 44 Watts Avg. 18 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) −15 IDQ = 1300 mA Gps, POWER GAIN (dB) 17 1125 mA 16 900 mA 675 mA 15 450 mA 14 VDD = 28 Vdc, f1 = 1958.75 MHz, f2 = 1961.25 MHz Two−Tone Measurements, 2.5 MHz Tone Spacing 13 VDD = 28 Vdc, f1 = 1958.75 MHz, f2 = 1961.25 MHz Two−Tone Measurements, 2.5 MHz Tone Spacing −20 −25 −30 IDQ = 450 mA 675 mA −35 −40 1300 mA −45 1125 mA 900 mA −50 −55 1 10 100 Pout, OUTPUT POWER (WATTS) PEP Figure 5. Two - Tone Power Gain versus Output Power 300 1 10 100 300 Pout, OUTPUT POWER (WATTS) PEP Figure 6. Third Order Intermodulation Distortion versus Output Power MRF6S19100HR3 MRF6S19100HSR3 RF Device Data Freescale Semiconductor 5 TYPICAL CHARACTERISTICS 56 VDD = 28 Vdc, Pout = 100 W (PEP), IDQ = 900 mA Two−Tone Measurements (f1 + f2)/2 = Center Frequency of 1960 MHz −10 55 Pout, OUTPUT POWER (dBm) −20 −30 3rd Order 5th Order −40 7th Order −50 P3dB = 51.56 dBm (143.2 W) 53 P1dB = 50.9 dBm (124.2 W) 52 Actual 51 50 49 VDD = 28 Vdc, IDQ = 900 mA Pulsed CW, 8 μsec(on), 1 msec(off) f = 1960 MHz 48 47 −60 Ideal 54 46 1 0.1 100 10 31 30 32 33 34 35 36 37 38 39 Pin, INPUT POWER (dBm) Figure 7. Intermodulation Distortion Products versus Tone Spacing Figure 8. Pulse CW Output Power versus Input Power ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) TWO−TONE SPACING (MHz) 60 −10 VDD = 28 Vdc, IDQ = 900 mA f1 = 1958.75 MHz, f2 = 1961.25 MHz 2−Carrier N−CDMA, 2.5 MHz Carrier Spacing, 1.2288 MHz Channel Bandwidth, PAR = 9.8 dB @ 0.01% Probability (CCDF) 50 40 ηD IM3 −20 −30 ACPR 30 −40 20 −50 Gps 10 0 4 40 10 100 IM3 (dBc), ACPR (dBc) IMD, INTERMODULATION DISTORTION (dBc) 0 −60 −70 200 Pout, OUTPUT POWER (WATTS) AVG. Figure 9. 2 - Carrier N - CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power 70 18 16 60 16.5 15 50 14 40 17 30 12 20 ηD VDD = 28 Vdc IDQ = 900 mA f = 1960 MHz 11 10 3 10 100 10 0 200 Gps, POWER GAIN (dB) 13 ηD, DRAIN EFFICIENCY (%) Gps, POWER GAIN (dB) Gps VDD = 32 V 15 13.5 28 V 12 24 V 10.5 20 V 9 16 V 7.5 IDQ = 900 mA f = 1960 MHz 12 V 6 0 25 50 75 100 125 150 175 Pout, OUTPUT POWER (WATTS) CW Pout, OUTPUT POWER (WATTS) CW Figure 10. Power Gain and Drain Efficiency versus CW Output Power Figure 11. Power Gain versus Output Power 200 MRF6S19100HR3 MRF6S19100HSR3 6 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS MTTF FACTOR (HOURS X AMPS2) 109 108 107 106 90 100 110 120 130 140 150 160 170 180 190 200 210 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than ±10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application. Figure 12. MTTF Factor versus Junction Temperature N - CDMA TEST SIGNAL 100 0 1.2288 MHz Channel BW −10 −20 1 −IM3 in 1.2288 MHz Integrated BW −30 +IM3 in 1.2288 MHz Integrated BW −40 0.1 IS−95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 1.2288 MHz Channel Bandwidth Carriers. ACPR Measured in 30 kHz Bandwidth @ ±885 kHz Offset. IM3 Measured in 1.2288 MHz Bandwidth @ ±2.5 MHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. 0.01 0.001 (dB) PROBABILITY (%) 10 −50 −60 −70 −ACPR in 30 kHz Integrated BW +ACPR in 30 kHz Integrated BW −80 0.0001 0 2 4 6 8 10 −90 PEAK−TO−AVERAGE (dB) Figure 13. 2 - Carrier CCDF N - CDMA −100 −7.5 −6 −4.5 −3 −1.5 0 1.5 3 4.5 6 7.5 f, FREQUENCY (MHz) Figure 14. 2 - Carrier N - CDMA Spectrum MRF6S19100HR3 MRF6S19100HSR3 RF Device Data Freescale Semiconductor 7 f = 1990 MHz Zload f = 1930 MHz f = 1990 MHz Zsource Zo = 5 Ω f = 1930 MHz VDD = 28 Vdc, IDQ = 900 mA, Pout = 22 W Avg. f MHz Zsource Ω Zload Ω 1930 1.57 - j3.50 2.26 - j2.31 1960 1.83 - j3.29 2.22 - j2.13 1990 2.34 - j3.71 2.14 - j2.00 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 15. Series Equivalent Source and Load Impedance MRF6S19100HR3 MRF6S19100HSR3 8 RF Device Data Freescale Semiconductor NOTES MRF6S19100HR3 MRF6S19100HSR3 RF Device Data Freescale Semiconductor 9 NOTES MRF6S19100HR3 MRF6S19100HSR3 10 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS B G 2X 1 Q bbb M T A M B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 3 B K 2 (FLANGE) D bbb M T A B M M M bbb N M T A B M M M ccc M T A M aaa M T A M (LID) B S (LID) ccc H R (INSULATOR) M T A B M DIM A B C D E F G H K M N Q R S aaa bbb ccc M (INSULATOR) B M C F E A T A SEATING PLANE INCHES MIN MAX 1.335 1.345 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 .118 .138 0.365 0.375 0.365 0.375 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 19.66 19.96 19.60 20.00 3.00 3.51 9.27 9.53 9.27 9.52 0.127 REF 0.254 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE (FLANGE) CASE 465 - 06 ISSUE G NI - 780 MRF6S19100HR3 4X U (FLANGE) 4X Z (LID) B 1 K 2X 2 B (FLANGE) NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. D bbb M T A M B M N (LID) ccc M R M T A M B M M B M ccc M T A M aaa M T A M S (INSULATOR) bbb M T A (LID) B M (INSULATOR) B M H C 3 E A A F T SEATING PLANE (FLANGE) CASE 465A - 06 ISSUE H NI - 780S MRF6S19100HSR3 DIM A B C D E F H K M N R S U Z aaa bbb ccc INCHES MIN MAX 0.805 0.815 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 0.365 0.375 0.365 0.375 −−− 0.040 −−− 0.030 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 20.45 20.70 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 19.61 20.02 19.61 20.02 9.27 9.53 9.27 9.52 −−− 1.02 −−− 0.76 0.127 REF 0.254 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE MRF6S19100HR3 MRF6S19100HSR3 RF Device Data Freescale Semiconductor 11 How to Reach Us: Home Page: www.freescale.com E - mail: [email protected] USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006. All rights reserved. MRF6S19100HR3 MRF6S19100HSR3 Document Number: MRF6S19100H Rev. 4, 5/2006 12 RF Device Data Freescale Semiconductor