FREESCALE MRF6522

Document Number: MRF6522--70
Rev. 9, 10/2008
Freescale Semiconductor
Technical Data
LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09
RF Power Field Effect Transistor
N--Channel Enhancement--Mode Lateral MOSFET
MRF6522--70R3
LIFETIME BUY
Designed for GSM 900 frequency band, the high gain and broadband
performance of this device make it ideal for large--signal, common source
amplifier applications in 26 volt base station equipment.
• Specified Performance @ 940 MHz, 26 Volts
Output Power, P1dB — 80 Watts (Typ)
Power Gain @ P1dB — 16 dB (Typ)
Efficiency @ P1dB — 58% (Typ)
• Capable of Handling 5:1 VSWR, @ 26 Vdc, 945 MHz, 50 Watts CW Output
Power
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel.
920--960 MHz, 70 W, 26 V
LATERAL N--CHANNEL
RF POWER MOSFET
CASE 465D--05, STYLE 1
NI--600
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +65
Vdc
Gate--Source Voltage
VGS
±20
Vdc
Drain Current — Continuous
ID
7
Adc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
159
0.9
W
W/°C
Storage Temperature Range
Tstg
--65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
TJ
200
°C
Symbol
Value
Unit
RθJC
1.1
°C/W
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
NOTE -- CAUTION -- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
 Freescale Semiconductor, Inc., 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF6522--70R3
1
Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)DSS
65
—
—
Vdc
Zero Gate Voltage Drain Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
µAdc
Gate--Source Leakage Current
(VGS = 20 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
µAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 300 µAdc)
VGS(th)
2
3
4
Vdc
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 400 mAdc)
VGS(Q)
3
4
5
Vdc
Drain--Source On--Voltage
(VGS = 10 Vdc, ID = 1 Adc)
VDS(on)
—
0.15
0.6
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 2 Adc)
gfs
2
3
—
S
Input Capacitance (1)
(VDS = 26 Vdc, VGS = 0, f = 1 MHz)
Ciss
—
130
—
pF
Output Capacitance
(VDS = 26 Vdc, VGS = 0, f = 1 MHz)
Coss
41
47
52
pF
Reverse Transfer Capacitance
(VDS = 26 Vdc, VGS = 0, f = 1 MHz)
Crss
2.4
3
3.4
pF
P1dB
73
80
—
W
Common--Source Amplifier Power Gain @ P1dB (Min)
(VDD = 26 Vdc, IDQ = 400 mA, f = 940 MHz)
Gps
14
16
18
dB
Drain Efficiency @ Pout = 50 W
(VDD = 26 Vdc, IDQ = 400 mA, f = 940 MHz)
η1
47
51
—
%
Drain Efficiency @ P1dB
(VDD = 26 Vdc, IDQ = 400 mA, f = 940 MHz)
η2
—
58
—
%
Input Return Loss @ Pout = 50 W
(VDD = 26 Vdc, IDQ = 400 mA, f = 940 MHz)
IRL
—
—
--15
dB
Off Characteristics
Drain--Source Breakdown Voltage
(VGS = 0 Vdc, ID = 20 µAdc)
LIFETIME BUY
On Characteristics
Dynamic Characteristics
Functional Tests (In Freescale Test Fixture)
Output Power
(VDD = 26 Vdc, IDQ = 400 mA, f = 940 MHz)
1. Value excludes the input matching.
MRF6522--70R3
2
RF Device Data
Freescale Semiconductor
LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09
Table 3. Electrical Characteristics (TC = 25°C unless otherwise noted)
Vreg
C1
Vin
T1
Vout
Gnd
R1
LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09
VBIAS
R6
R2
R3
C3
C12
C4
C10
VSUPPLY
+
C2
T2
R4
C7
C14
R5
C6
C13
RF Output
RF Input
C5
Q1
LIFETIME BUY
C8
C1
C2
C3
C4, C6, C14
C5
C7, C8, C13
C9, C10
C11, C12
R1
R2
C9
1.0 µF Chip Capacitor (0805)
10 µF, 35 Vdc Tantalum Capacitor
100 nF Chip Capacitor
22 pF Chip Capacitors, ACCU--P (0805)
2.7 pF Chip Capacitor, ACCU--P (0805)
4.7 pF Chip Capacitors, ACCU--P (0805)
8.2 pF Chip Capacitors, ACCU--P (0805)
2.2 pF Chip Capacitors, ACCU--P (0805)
10 Ω Chip Resistor (0805)
1.0 kΩ Chip Resistor (0805)
C11
R3
R4
R5
R6
1.2 kΩ Chip Resistor (0805)
2.2 kΩ Chip Resistor (0805)
220 Ω Chip Resistor (0805)
5.0 kΩ SMD Potentiometer
T1
T2
LP2951 Micro--8
BC847 SOT--23
SUBSTRATE GI180 0.8 mm
Figure 1. MRF6522--70 Test Circuit Schematic
VBIAS
C1
VSUPPLY
Ground
C2
R1 T1
R2
R3
R6
C14
R4
C3
T2
C4
R5
C6
C5
C8
MRF6522--70
C7
C10
C12
C13
C9
C11
Q1
STRAP
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 2. MRF6522--70 Test Circuit Component Layout
MRF6522--70R3
RF Device Data
Freescale Semiconductor
3
TYPICAL CHARACTERISTICS
18.0
IDQ = 600 mA
G ps , POWER GAIN (dB)
G ps , POWER GAIN (dB)
17.0
500 mA
16.5
400 mA
200 mA
IDQ = 600 mA
17.8
300 mA
16.0
VDS = 26 Vdc
f = 921 MHz
17.6
500 mA
17.4
400 mA
17.2
300 mA
17.0
16.8
200 mA
16.6
15.5
16.4
15.0
16.0
VDS = 26 Vdc
f = 960 MHz
16.2
10
100
10
100
Pout, OUTPUT POWER (WATTS)
Pout, OUTPUT POWER (WATTS)
Figure 4. Power Gain versus Output Power
105
115
3.0 W
95
2.0 W
85
75
65
IDQ = 400 mA
f = 921 MHz
55
45
18
19
20
21
22
23
24
25
26
VDD, SUPPLY VOLTAGE (VOLTS)
28
27
Figure 5. Output Power versus Supply Voltage
95
Pin = 5.0 W
4.0 W
85
3.0 W
75
2.0 W
65
55
IDQ = 400 mA
f = 960 MHz
45
35
18
19
20
21
22
23
24
25
26
VDD, SUPPLY VOLTAGE (VOLTS)
28
Figure 6. Output Power versus Supply Voltage
80
80
70
70
60
60
50
50
η
40
40
30
30
Pout
20
20
VDS = 26 Vdc
IDQ = 400 mA
f = 921 MHz
10
0
27
η , EFFICIENCY (%)
Pin = 5.0 W
Pout , OUTPUT POWER (WATTS)
4.0 W
105
Pout , OUTPUT POWER (WATTS)
Pout , OUTPUT POWER (WATTS)
LIFETIME BUY
Figure 3. Power Gain versus Output Power
0
0.5
1.0
1.5
Pin, INPUT POWER (WATTS)
10
2.0
0
Figure 7. Efficiency and Output Power
versus Input Power
MRF6522--70R3
4
RF Device Data
Freescale Semiconductor
LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09
17.5
TYPICAL CHARACTERISTICS
80
Pout
60
60
50
50
η
40
40
30
30
20
20
VDS = 26 Vdc
IDQ = 400 mA
f = 960 MHz
10
0
0
0.5
1.0
1.5
Pin, INPUT POWER (WATTS)
10
2.0
0
20
70
19
60
50
18
17
Gps
40
30
16
η
15
VDS = 26 Vdc
f = 921 MHz
20
η, EFFICIENCY (%)
G ps , POWER GAIN (dB)
Figure 8. Efficiency and Output Power
versus Input Power
10
14
13
0
0.02 0.03 0.06 0.12
0.21 0.38
0.70 1.26
2.26 3.96
Pin, INPUT POWER (WATTS)
20
70
19
60
18
50
17
Gps
40
30
16
η
15
VDS = 26 Vdc
f = 960 MHz
20
η, EFFICIENCY (%)
Figure 9. Power Gain and Efficiency
versus Input Power
G ps , POWER GAIN (dB)
LIFETIME BUY
70
LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09
70
η , EFFICIENCY (%)
Pout , OUTPUT POWER (WATTS)
80
10
14
13
0
0.02 0.03 0.05 0.10
0.18 0.34
0.62 1.15
2.14 3.70
Pin, INPUT POWER (WATTS)
Figure 10. Power Gain and Efficiency
versus Input Power
MRF6522--70R3
RF Device Data
Freescale Semiconductor
5
TYPICAL CHARACTERISTICS
Gps
--15
17
--20
16
IRL
G ps , GAIN (dB)
IRL, INPUT RETURN LOSS (dB)
LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09
18
--10
VDS = 26 Vdc
IDQ = 400 mA
15
--25
910
920
930
940
950
f, FREQUENCY (MHz)
960
970
LIFETIME BUY
Figure 11. Performance in Broadband Circuit (at Small Signal)
MRF6522--70R3
6
RF Device Data
Freescale Semiconductor
Zload
LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09
f = 925 MHz
960 MHz
960 MHz
Zsource
LIFETIME BUY
f = 925 MHz
Zo = 5 Ω
VSUPPLY = 26 Vdc, IBIAS = 400 mA, CW = Room Temperature
f
MHz
Zsource
Ω
Zload
Ω
925
2.65 -- j2.53
1.62 + j0.2
940
2.67 -- j2.14
1.56 + j0.34
960
2.85 -- j1.87
1.55 + j0.2
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under Test
Input
Matching
Network
Z
source
Z
load
Figure 12. Series Equivalent Source and Load Impedance
MRF6522--70R3
RF Device Data
Freescale Semiconductor
7
PACKAGE DIMENSIONS
G
B
2X
1
Q
bbb
M
T A
M
B
NOTES:
1. INTERPRET DIMENSIONS AND TOLERANCES
PER ANSI Y14.5M--1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
M
3
B
K
2
(FLANGE)
bbb
M
D
T A
M
bbb
M
T A
M
ccc
M
T A
M
B
M
M
(INSULATOR)
B
N
B
M
T A
B
M
M
R
(LID)
S
(INSULATOR)
(LID)
M
F
C
aaa
H
E
A
ccc
M
T
M
T A
M
B
M
DIM
A
B
C
D
E
F
G
H
K
M
N
Q
R
S
aaa
bbb
ccc
INCHES
MIN
MAX
1.065
1.075
0.380
0.390
0.160
0.205
0.425
0.435
0.060
0.070
0.004
0.006
0.870 BSC
0.096
0.106
0.190
0.223
0.594
0.606
0.591
0.601
0.124
0.130
0.394
0.404
0.395
0.405
0.005 REF
0.010 REF
0.015 REF
MILLIMETERS
MIN
MAX
27.05
27.30
9.65
9.91
4.06
5.21
10.80
11.05
1.52
1.78
0.10
0.15
22.10 BSC
2.44
2.69
4.83
5.66
15.09
15.39
15.01
15.27
3.15
3.30
10.01
10.26
10.03
10.29
0.13 REF
0.25 REF
0.38 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
SEATING
PLANE
A
CASE 465D--05
ISSUE D
NI--600
MRF6522--70R3
8
RF Device Data
Freescale Semiconductor
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
9
Oct. 2008
Description
• Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification
number, PCN12779, p. 1, 2
• Added Product Documentation and Revision History, p. 9
MRF6522--70R3
RF Device Data
Freescale Semiconductor
9
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 Freescale Semiconductor, Inc. 2008. All rights reserved.
MRF6522--70R3
Document Number: MRF6522--70
Rev. 9, 10/2008
10
RF Device Data
Freescale Semiconductor