Freescale Semiconductor Technical Data Document Number: MRF6S9125N Rev. 5, 8/2008 RF Power Field Effect Transistors MRF6S9125NR1 MRF6S9125NBR1 N - Channel Enhancement - Mode Lateral MOSFETs LIFETIME BUY Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 28 volt base station equipment. N - CDMA Application • Typical Single - Carrier N - CDMA Performance: VDD = 28 Volts, IDQ = 950 mA, Pout = 27 Watt Avg., Full Frequency Band (865 - 960 MHz), IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain — 20.2 dB Drain Efficiency — 31% ACPR @ 750 kHz Offset = - 47.1 dBc in 30 kHz Bandwidth GSM EDGE Application • Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 700 mA, Pout = 60 Watts Avg., Full Frequency Band (865 - 960 MHz or 921 - 960 MHz) Power Gain — 20 dB Drain Efficiency — 40% Spectral Regrowth @ 400 kHz Offset = - 63 dBc Spectral Regrowth @ 600 kHz Offset = - 78 dBc EVM — 1.8% rms GSM Application • Typical GSM Performance: VDD = 28 Volts, IDQ = 700 mA, Pout = 125 Watts, Full Frequency Band (921 - 960 MHz) Power Gain — 19 dB Drain Efficiency — 62% • Capable of Handling 10:1 VSWR, @ 28 Vdc, 880 MHz, 125 Watts CW Output Power Features • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • 225°C Capable Plastic Package • N Suffix Indicates Lead - Free Terminations. RoHS Compliant. • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. 865 - 960 MHz, 27 W AVG., 28 V SINGLE N - CDMA, GSM EDGE LATERAL N - CHANNEL RF POWER MOSFETs CASE 1486 - 03, STYLE 1 TO - 270 WB - 4 PLASTIC MRF6S9125NR1 CASE 1484 - 04, STYLE 1 TO - 272 WB - 4 PLASTIC MRF6S9125NBR1 Table 1. Maximum Ratings Rating Symbol Value Unit Drain - Source Voltage VDSS - 0.5, +68 Vdc Gate - Source Voltage VGS - 0.5, +12 Vdc Storage Temperature Range Tstg - 65 to +150 °C Case Operating Temperature TC 150 °C Operating Junction Temperature (1,2) TJ 225 °C 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. © Freescale Semiconductor, Inc., 2006, 2008. All rights reserved. RF Device Data Freescale Semiconductor LAST ORDER 3 APR 08 LAST SHIP 1 OCT 08 MRF6S9125NR1/NBR1 replaced by MRFE6S9125NR1/NBR1. Refer to Device Migration PCN12895 for more details. MRF6S9125NR1 MRF6S9125NBR1 1 Table 2. Thermal Characteristics Value (1,2) Symbol Thermal Resistance, Junction to Case Case Temperature 80°C, 125 W CW Case Temperature 76°C, 27 W CW RθJC Unit °C/W 0.44 0.45 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22 - A114) 1B (Minimum) Machine Model (per EIA/JESD22 - A115) C (Minimum) Charge Device Model (per JESD22 - C101) IV (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating Package Peak Temperature Unit 3 260 °C LIFETIME BUY Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 400 μAdc) VGS(th) 1 2.1 3 Vdc Gate Quiescent Voltage (VDD = 28 Vdc, ID = 950 mAdc, Measured in Functional Test) VGS(Q) 2 2.89 4 Vdc Drain - Source On - Voltage (VGS = 10 Vdc, ID = 2.74 Adc) VDS(on) 0.05 0.23 0.3 Vdc Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 2 — pF Output Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss — 60 — pF Off Characteristics On Characteristics Dynamic Characteristics (3) Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 950 mA, Pout = 27 W Avg. N - CDMA, f = 880 MHz, Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±750 kHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain Gps 19 20.2 24 dB Drain Efficiency ηD 29 31 — % ACPR — - 47.1 - 45 dBc IRL — - 16 -9 dB Adjacent Channel Power Ratio Input Return Loss 1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. 3. Part is internally input matched. LAST ORDER 3 APR 08 LAST SHIP 1 OCT 08 Characteristic (continued) MRF6S9125NR1 MRF6S9125NBR1 2 RF Device Data Freescale Semiconductor Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued) Symbol Min Typ Max Unit Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 700 mA, Pout = 60 W Avg., 921 - 960 MHz, EDGE Modulation Power Gain Gps — 20 — dB Drain Efficiency ηD — 40 — % Error Vector Magnitude EVM — 1.8 — % rms Spectral Regrowth at 400 kHz Offset SR1 — - 63 — dBc Spectral Regrowth at 600 kHz Offset SR2 — - 78 — dBc Typical CW Performances (In Freescale GSM Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 700 mA, Pout = 125 W, 921 - 960 MHz Power Gain Gps — 19 — dB Drain Efficiency ηD — 62 — % IRL — - 12 — dB P1dB — 125 — W LIFETIME BUY Input Return Loss Pout @ 1 dB Compression Point, CW (f = 880 MHz) LAST ORDER 3 APR 08 LAST SHIP 1 OCT 08 Characteristic MRF6S9125NR1 MRF6S9125NBR1 RF Device Data Freescale Semiconductor 3 + C10 RF INPUT C9 + + C8 C7 C18 R2 C6 Z2 Z3 Z4 Z5 Z6 Z9 C4 Z7 C20 C21 C22 Z10 Z11 C11 C12 Z12 Z13 Z14 Z15 Z16 C13 C14 C15 C16 C23 RF Z17 OUTPUT C17 DUT C3 C2 LIFETIME BUY + Z8 C1 Z1, Z17 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 + L2 L1 Z1 C19 VSUPPLY + 0.200″ 1.060″ 0.382″ 0.108″ 0.200″ 0.028″ 0.236″ 0.050″ 0.238″ x 0.080″ x 0.080″ x 0.220″ x 0.220″ x 0.420″ x 0.620″ x 0.620″ x 0.620″ x 0.620″ C5 Microstrip Microstrip Microstrip Microstrip x 0.620″ Taper Microstrip Microstrip Microstrip Microstrip Z10 Z11 Z12 Z13 Z14 Z15 Z16 PCB 0.057″ x 0.620″ Microstrip 0.119″ x 0.620″ Microstrip 0.450″ x 0.220″ Microstrip 0.061″ x 0.220″ Microstrip 0.078″ x 0.220″ Microstrip 0.692″ x 0.080″ Microstrip 0.368″ x 0.080″ Microstrip Arlon CuClad 250GX - 0300 - 55 - 22, 0.030″, εr = 2.55 Figure 1. MRF6S9125NR1(NBR1) Test Circuit Schematic Table 6. MRF6S9125NR1(NBR1) Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1 20 pF Chip Capacitor ATC100B200FT500XT ATC C2 6.2 pF Chip Capacitor ATC100B6R2BT500XT ATC C3, C15 0.8 - 8.0 pF Variable Capacitors, Gigatrim 27291SL Johanson C4, C5 11 pF Chip Capacitors ATC100B110FT500XT ATC C6, C18, C19 0.56 μF, 50 V Chip Capacitors C1825C564J5RAC Kemet C7, C8 47 μF, 16 V Tantalum Capacitors T491D476K016AT Kemet C9, C23 47 pF Chip Capacitors ATC700B470FT500XT ATC C10 100 μF, 50 V Electrolytic Capacitor MCHT101M1HB - 1017 - RF Multicomp C11, C12 12 pF Chip Capacitors ATC100B120FT500XT ATC C13, C14 5.1 pF Chip Capacitors ATC100B5R1BT500XT ATC C16 0.3 pF Chip Capacitor ATC700B0R3BT500XT ATC C17 39 pF Chip Capacitor ATC700B390FT500XT ATC C20, C21 22 μF, 35 V Tantalum Capacitors T491X226K035AT Kemet C22 470 μF, 63 V Electrolytic Capacitor ESME630ELL471MK25S United Chemi - Con L1 7.15 nH Inductor 1606 - 7J CoilCraft L2 8.0 nH Inductor A03T CoilCraft R1 15 Ω, 1/3 W Chip Resistor CRCW121015R0FKEA Vishay R2 560 kΩ, 1/4 W Chip Resistor CRCW12065603FKEA Vishay LAST ORDER 3 APR 08 LAST SHIP 1 OCT 08 R1 VBIAS MRF6S9125NR1 MRF6S9125NBR1 4 RF Device Data Freescale Semiconductor C20 C21 C8 C7 C22 C9 C10 C6 R2 C4 R1 C23 C18 C11 C14 C1 C17 C2 C5 C3 CUT OUT AREA L2 L1 LIFETIME BUY VDD C19 C13 C15 C16 C12 900 MHz TO272 WB Rev. 0 Figure 2. MRF6S9125NR1(NBR1) Test Circuit Component Layout LAST ORDER 3 APR 08 LAST SHIP 1 OCT 08 VGG MRF6S9125NR1 MRF6S9125NBR1 RF Device Data Freescale Semiconductor 5 ηD 20 30 VDD = 28 Vdc, Pout = 27 W (Avg.) IDQ = 950 mA, N−CDMA IS−95 Pilot Sync, Paging, Traffic Codes 8 Through 13 19.8 19.5 28 −30 IRL 19.3 ACPR 19 −40 −50 18.8 −60 ALT1 −70 910 18.5 850 860 870 880 890 900 −5 −10 −15 −20 −25 19.2 ηD 44 VDD = 28 Vdc, Pout = 62.5 W (Avg.) IDQ = 950 mA, N−CDMA IS−95 Pilot Sync, Paging, Traffic Codes 8 Through 13 19 18.8 40 −30 ACPR 18.6 18.4 −50 ALT1 18.2 18 850 −40 IRL 860 870 880 890 900 −60 −70 910 −5 −10 −15 −20 −25 IRL, INPUT RETURN LOSS (dB) 48 19.4 f, FREQUENCY (MHz) Figure 4. Single - Carrier N - CDMA Broadband Performance @ Pout = 62.5 Watts Avg. 22 −10 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) IDQ = 1475 mA 21 Gps, POWER GAIN (dB) 52 Gps ACPR (dBc), ALT1 (dBc) 19.6 ηD, DRAIN EFFICIENCY (%) Figure 3. Single - Carrier N - CDMA Broadband Performance @ Pout = 27 Watts Avg. Gps, POWER GAIN (dB) LIFETIME BUY f, FREQUENCY (MHz) 1187 mA 20 950 mA 712 mA 19 475 mA 18 17 VDD = 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz Two−Tone Measurements VDD = 28 Vdc f1 = 880 MHz, f2 = 880.1 MHz Two−Tone Measurements −20 IDQ = 1425 mA −30 712 mA 475 mA −40 −50 1187 mA 950 mA −60 16 1 10 100 300 1 10 100 LAST ORDER 3 APR 08 LAST SHIP 1 OCT 08 32 Gps IRL, INPUT RETURN LOSS (dB) Gps, POWER GAIN (dB) 20.3 ACPR (dBc), ALT1 (dBc) 34 20.5 ηD, DRAIN EFFICIENCY (%) TYPICAL CHARACTERISTICS 300 Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) PEP Figure 5. Two - Tone Power Gain versus Output Power Figure 6. Third Order Intermodulation Distortion versus Output Power MRF6S9125NR1 MRF6S9125NBR1 6 RF Device Data Freescale Semiconductor −30 −40 3rd Order −50 5th Order −60 7th Order −70 10 100 VDD = 28 Vdc, Pout = 125 W (PEP) IDQ = 950 mA, Two−Tone Measurements (f1 + f2)/2 = Center Frequency of 880 MHz −10 −20 3rd Order −30 5th Order −40 −50 7th Order −60 0.1 300 1 10 100 Pout, OUTPUT POWER (WATTS) PEP TWO−TONE SPACING (MHz) Figure 7. Intermodulation Distortion Products versus Output Power Figure 8. Intermodulation Distortion Products versus Tone Spacing 56 Ideal P3dB = 52.4 dBm (172.5 W) 55 54 P1dB = 51.5 dBm (139.3 W) 53 Actual 52 51 50 VDD = 28 Vdc, IDQ = 950 mA Pulsed CW, 8 μsec(on), 1 msec(off) f = 880 MHz 49 48 28 29 30 31 32 33 34 36 35 Pin, INPUT POWER (dBm) ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) Figure 9. Pulsed CW Output Power versus Input Power 50 VDD = 28 Vdc, IDQ = 950 mA f = 880 MHz, N−CDMA IS−95 (Pilot 40 Sync, Paging, Traffic Codes 8 Through 13) −30 TC = −30_C 25_C ALT1 −40 ηD 85_C 30 −50 −30_C 25_C 85_C Gps 20 25_C ACPR 25_C 10 −30_C −70 85_C 0 0.1 1 −60 10 100 −80 200 Pout, OUTPUT POWER (WATTS) AVG. ACPR, ADJACENT CHANNEL POWER RATIO (dBc) ALT1, CHANNEL POWER (dBc) −20 0 LAST ORDER 3 APR 08 LAST SHIP 1 OCT 08 VDD = 28 Vdc, IDQ = 950 mA f1 = 880 MHz, f2 = 880.1 MHz Two−Tone Measurements 1 LIFETIME BUY IMD, INTERMODULATION DISTORTION (dBc) −10 Pout, OUTPUT POWER (dBm) IMD, INTERMODULATION DISTORTION (dBc) TYPICAL CHARACTERISTICS Figure 10. Single - Carrier N - CDMA ACPR, ALT1, Power Gain and Drain Efficiency versus Output Power MRF6S9125NR1 MRF6S9125NBR1 RF Device Data Freescale Semiconductor 7 TYPICAL CHARACTERISTICS 22 25_C 40 85_C 19 ηD 18 30 Gps 17 25_C 16 VDD = 28 Vdc IDQ = 950 mA f = 880 MHz 85_C 15 10 100 19 18 32 V 28 V VDD = 24 V 17 10 IDQ = 950 mA f = 880 MHz 0 200 16 0 50 100 150 200 Pout, OUTPUT POWER (WATTS) CW Pout, OUTPUT POWER (WATTS) CW Figure 11. Power Gain and Drain Efficiency versus CW Output Power Figure 12. Power Gain versus Output Power 108 MTTF (HOURS) 1 20 20 Gps, POWER GAIN (dB) 50 ηD, DRAIN EFFICIENCY (%) Gps, POWER GAIN (dB) 20 60 107 106 105 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 28 Vdc, Pout = 27 W Avg., and ηD = 31%. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. Figure 13. MTTF Factor versus Junction Temperature LAST ORDER 3 APR 08 LAST SHIP 1 OCT 08 TC = −30_C 21 LIFETIME BUY 21 70 −30_C 250 MRF6S9125NR1 MRF6S9125NBR1 8 RF Device Data Freescale Semiconductor 100 −10 −20 −30 1 −40 −50 0.1 (dB) PROBABILITY (%) 10 IS−95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 1.2288 MHz Channel Bandwidth Carriers. ACPR Measured in 30 kHz Bandwidth @ ±750 kHz Offset. ALT1 Measured in 30 kHz Bandwidth @ ±1.98 MHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. 0.01 0.001 −60 −70 −80 −90 0.0001 0 2 4 6 8 10 1.2288 MHz Channel BW .. .................................................. . . . . ............ .. .. .. .. .. .. . .. ... . .. . −ALT1 in 30 kHz +ALT1 in 30 kHz . .. . Integrated BW Integrated BW .................. ......... .......... ..... .......... . . ................ ...... ... .. . . . . . . . .............. ................. ......... ........... ... ...... ...... ......... .......... . . . . . . . . . ......... ...... . . . ....... −ACPR in 30 kHz +ACPR in 30 kHz .................. . . . . .. .... . . ............ ....... ............... . ........ . ................ ... . . . . . Integrated BW Integrated BW ........ ...... ........... ...... ... .......... ........... −100 LIFETIME BUY PEAK−TO−AVERAGE (dB) Figure 14. Single - Carrier CCDF N - CDMA −110 −3.6 −2.9 −2.2 −1.5 −0.7 0 0.7 1.5 2.2 2.9 f, FREQUENCY (MHz) Figure 15. Single - Carrier N - CDMA Spectrum 3.6 LAST ORDER 3 APR 08 LAST SHIP 1 OCT 08 N - CDMA TEST SIGNAL MRF6S9125NR1 MRF6S9125NBR1 RF Device Data Freescale Semiconductor 9 Zload f = 860 MHz LIFETIME BUY Zo = 5 Ω Zsource f = 900 MHz f = 860 MHz VDD = 28 Vdc, IDQ = 950 mA, Pout = 27 W Avg. f MHz Zsource Ω Zload Ω 860 0.62 - j2.13 1.48 - j0.14 865 0.64 - j2.31 1.56 - j0.09 870 0.62 - j2.45 1.66 - j0.02 875 0.59 - j2.43 1.73 + j0.04 880 0.57 - j2.42 1.74 + j0.11 885 0.54 - j2.36 1.68 + j0.19 890 0.57 - j2.18 1.61 + j0.25 895 0.58 - j1.94 1.52 + j0.33 900 0.59 - j1.86 1.48 + j0.37 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z LAST ORDER 3 APR 08 LAST SHIP 1 OCT 08 f = 900 MHz load Figure 16. Series Equivalent Source and Load Impedance MRF6S9125NR1 MRF6S9125NBR1 10 RF Device Data Freescale Semiconductor EDGE CHARACTERIZATION L1 + + + C21 C1 C2 C16 Z8 Z1 Z2 Z3 Z4 Z5 C10 Z9 Z10 Z11 C18 C19 C20 Z12 Z6 C7 C6 0.150″ 1.050″ 0.330″ 0.220″ 0.420″ 0.200″ 0.040″ x 0.080″ x 0.080″ x 0.220″ x 0.100″ x 0.100″ x 0.620″ x 0.620″ Z13 Z14 C13 C14 RF OUTPUT Z15 C15 C9 C5 LIFETIME BUY + C8 Z7 C4 Z1, Z15 Z2 Z3 Z4 Z5 Z6 Z7, Z8 + L2 C3 R1 RF INPUT C17 VSUPPLY + C11 C12 DUT Microstrip Microstrip Microstrip x 0.420″ Taper x 0.620″ Taper Microstrip Microstrip Z9 Z10 Z11 Z12 Z13 Z14 PCB 0.620″ x 0.100″ x 0.420″ Taper 0.420″ x 0.100″ x 0.220″ Taper 0.325″ x 0.220″ Microstrip 0.040″ x 0.220″ Microstrip 0.475″ x 0.080″ Microstrip 0.400″ x 0.080″ Microstrip Arlon CuClad 250GX - 0300 - 55 - 22, 0.030″, εr = 2.55 Figure 17. MRF6S9125NR1(NBR1) Test Circuit Schematic Table 7. MRF6S9125NR1(NBR1) Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C2 47 μF, 16 V Tantalum Capacitors T491D476K016AT Kemet C3, C16, C17 0.56 μF, 50 V Chip Capacitors C1825C564J5GAC Kemet C4 20 pF Chip Capacitor ATC100B200FT500XT ATC C5, C7, C8 6.2 pF Chip Capacitors ATC100B6R2BT500XT ATC C6, C13 0.8 - 8.0 pF Variable Capacitors, Gigatrim 27291SL Johanson Dielectrics C9, C10 11 pF Chip Capacitors ATC100B110FT500XT ATC C11 5.1 pF Chip Capacitor ATC100B5R1BT500XT ATC C12 4.7 pF Chip Capacitor ATC100B4R7BT500XT ATC C14 0.3 pF Chip Capacitor ATC700B0R3BT500XT ATC C15 39 pF Chip Capacitor ATC700B390FT500XT ATC C18, C19 22 μF, 35 V Tantalum Capacitors T491X226K035AT Kemet C20 470 μF, 63 V Electrolytic Capacitor ESME630ELL471MK25S United Chemi - Con C21 100 μF, 50 V Electrolytic Capacitor MCHT101M1HB - 1017 - RF Multicomp L1 7.15 nH Inductor 1606 - 7 Coilcraft L2 8 nH Inductor A03T - 5 Coilcraft R1 15 Ω, 1/4 W Chip Resistor CRCW120615R0FKEA Vishay LAST ORDER 3 APR 08 LAST SHIP 1 OCT 08 VBIAS MRF6S9125NR1 MRF6S9125NBR1 RF Device Data Freescale Semiconductor 11 C1 C21 C3 C2 C17 C18 C19 C20 L1 C16 R1 C12 C10 C8 LIFETIME BUY C5 C7 C6 CUT OUT AREA L2 C4 C11 C9 C14 C13 Figure 18. MRF6S9125NR1(NBR1) Test Circuit Component Layout 900 MHz TO−272 WB Rev. 2 C15 LAST ORDER 3 APR 08 LAST SHIP 1 OCT 08 EDGE CHARACTERIZATION MRF6S9125NR1 MRF6S9125NBR1 12 RF Device Data Freescale Semiconductor EDGE CHARACTERIZATION 15 4 Pout = 70 W Avg. 3.5 3 2.5 60 W Avg. 2 1.5 1 20 W Avg. 0.5 0 900 920 930 940 950 960 970 980 9 45 ηD 6 30 3 15 0 1 990 10 0 300 100 Pout, OUTPUT POWER (WATTS) AVG. Figure 19. EVM versus Frequency Figure 20. EVM and Drain Efficiency versus Output Power VDD = 28 Vdc, IDQ = 700 mA f = 943 MHz, EDGE Modulation −52.5 Pout = 70 W Avg. SR @ 400 kHz −60 60 W Avg. 20 W Avg. −67.5 70 W Avg. SR @ 600 kHz 60 W Avg. −75 20 W Avg. −82.5 900 910 920 930 940 950 960 970 980 f, FREQUENCY (MHz) Figure 21. Spectral Regrowth at 400 kHz and 600 kHz versus Frequency −53 VDD = 28 Vdc IDQ = 700 mA f = 943 MHz EDGE Modulation −48 −51 −54 SPECTRAL REGROWTH @ 600 kHz (dBc) −45 SPECTRAL REGROWTH @ 400 kHz (dBc) 60 f, FREQUENCY (MHz) SPECTRAL REGROWTH @ 400 kHz AND 600 kHz (dBc) 910 12 TC = 25_C −57 −60 −63 −66 −69 −72 VDD = 28 Vdc IDQ = 700 mA f = 943 MHz EDGE Modulation −56 −59 −62 −65 TC = 25_C −68 −71 −74 −77 −80 −83 −75 0 22.5 45 67.5 90 112.5 135 0 22.5 45 67.5 90 112.5 Pout, OUTPUT POWER (WATTS) Pout, OUTPUT POWER (WATTS) Figure 22. Spectral Regrowth at 400 kHz versus Output Power Figure 23. Spectral Regrowth at 600 kHz versus Output Power LAST ORDER 3 APR 08 LAST SHIP 1 OCT 08 VDD = 28 Vdc IDQ = 700 mA 75 TC = 25_C EVM VDD = 28 Vdc IDQ = 700 mA f = 943 MHz EDGE Modulation ηD, DRAIN EFFICIENCY (%) EVM, ERROR VECTOR MAGNITUDE (% ms) 4.5 LIFETIME BUY EVM, ERROR VECTOR MAGNITUDE (% ms) 5 135 MRF6S9125NR1 MRF6S9125NBR1 RF Device Data Freescale Semiconductor 13 EDGE CHARACTERIZATION TEST SIGNAL −20 Reference Power VBW = 30 kHz Sweep Time = 70 ms RBW = 30 kHz −30 −40 (dB) −50 −60 −70 −80 400 kHz 400 kHz 600 kHz 600 kHz −90 −100 −110 LIFETIME BUY Center 943 MHz 200 kHz Figure 24. EDGE Spectrum Span 2 MHz LAST ORDER 3 APR 08 LAST SHIP 1 OCT 08 −10 MRF6S9125NR1 MRF6S9125NBR1 14 RF Device Data Freescale Semiconductor f = 900 MHz Zo = 5 Ω LIFETIME BUY f = 980 MHz Zsource f = 900 MHz VDD = 28 Vdc, IDQ = 700 mA, Pout = 60 W Avg. f MHz Zsource W Zload W 900 1.04 - j2.65 1.66 - j0.56 905 1.04 - j2.60 1.66 - j0.50 910 1.03 - j2.55 1.67 - j0.43 915 1.02 - j2.51 1.68 - j0.37 920 1.01 - j2.46 1.68 - j0.31 925 1.01 - j2.41 1.69 - j0.24 930 1.00 - j2.36 1.70 - j0.18 935 0.98 - j2.32 1.70 - j0.12 940 0.97 - j2.27 1.71 - j0.05 945 0.96 - j2.22 1.72 - j0.00 950 0.95 - j2.17 1.73 + j0.07 955 0.94 - j2.12 1.74 + j0.14 960 0.94 - j2.08 1.76 + j0.20 965 0.93 - j2.03 1.77 + j0.26 970 0.93 - j1.99 1.79 + j0.32 975 0.92 - j1.94 1.80 + j0.39 980 0.92 - j1.90 1.82 + j0.45 Output Matching Network Device Under Test Input Matching Network Z source Z load Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. LAST ORDER 3 APR 08 LAST SHIP 1 OCT 08 f = 980 MHz Zload Figure 25. Series Equivalent Source and Load Impedance for EDGE Characterization Tests MRF6S9125NR1 MRF6S9125NBR1 RF Device Data Freescale Semiconductor 15 PACKAGE DIMENSIONS MRF6S9125NR1 MRF6S9125NBR1 16 RF Device Data Freescale Semiconductor MRF6S9125NR1 MRF6S9125NBR1 RF Device Data Freescale Semiconductor 17 MRF6S9125NR1 MRF6S9125NBR1 18 RF Device Data Freescale Semiconductor MRF6S9125NR1 MRF6S9125NBR1 RF Device Data Freescale Semiconductor 19 MRF6S9125NR1 MRF6S9125NBR1 20 RF Device Data Freescale Semiconductor MRF6S9125NR1 MRF6S9125NBR1 RF Device Data Freescale Semiconductor 21 PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Application Notes • AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages • AN1955: Thermal Measurement Methodology of RF Power Amplifiers • AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over - Molded Plastic Packages Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices REVISION HISTORY The following table summarizes revisions to this document. Revision Date 5 Aug. 2008 Description • Listed replacement part and Device Migration notification reference number, p. 1 • Removed Total Device Dissipation from Max Ratings table as data was redundant (information already provided in Thermal Characteristics table), p. 1 • Added Case Operating Temperature limit to the Maximum Ratings table and set limit to 150°C, p. 1 • Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table, related “Continuous use at maximum temperature will affect MTTF” footnote added and changed 200°C to 225°C in Capable Plastic Package bullet, p. 1 • Corrected VDS to VDD in the RF test condition voltage callout for VGS(Q), and added “Measured in Functional Test”, On Characteristics table, p. 2 • Removed Forward Transconductance from On Characteristics table as it no longer provided usable information, p. 2 • Updated PCB information to show more specific material details, Figs. 1, 17, Test Circuit Schematic, p. 4, 11 • Updated Part Numbers in Tables 6, 7, Component Designations and Values, to latest RoHS compliant part numbers, p. 4, 11 • Adjusted scale for Fig. 8, Intermodulation Distortion Products versus Tone Spacing, p. 7 • Removed lower voltage tests from Fig. 12, Power Gain versus Output Power, due to fixed tuned fixture limitations, p. 8 • Replaced Fig. 13, MTTF versus Junction Temperature with updated graph. Removed Amps2 and listed operating characteristics and location of MTTF calculator for device, p. 8 • Replaced Case Outline 1486 - 03, Issue C, with 1486 - 03, Issue D, p. 16 - 18. Added pin numbers 1 through 4 on Sheet 1. • Replaced Case Outline 1484 - 04, Issue D, with 1484 - 04, Issue E, p. 19 - 21. Added pin numbers 1 through 4 on Sheet 1, replacing Gate and Drain notations with Pin 1 and Pin 2 designations. • Added Product Documentation and Revision History, p. 22 MRF6S9125NR1 MRF6S9125NBR1 22 RF Device Data Freescale Semiconductor How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. 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