FREESCALE MRF6S9160HSR3

Freescale Semiconductor
Technical Data
MRF6S9160HR3/HSR3 replaced by MRFE6S9160HR3/HSR3. Refer to Device
Migration PCN12895 for more details.
RF Power Field Effect Transistors
MRF6S9160HR3
MRF6S9160HSR3
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for N - CDMA, GSM and GSM EDGE base station applications
with frequencies from 865 to 960 MHz. Suitable for multicarrier amplifier
applications.
• Typical Single - Carrier N - CDMA Performance @ 880 MHz: VDD = 28 Volts,
IDQ = 1200 mA, Pout = 35 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging,
Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR =
9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 20.9 dB
Drain Efficiency — 30.5%
ACPR @ 750 kHz Offset — - 46.8 dBc in 30 kHz Bandwidth
GSM EDGE Application
• Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 1200 mA,
Pout = 76 Watts Avg., Full Frequency Band (865 - 895 MHz)
Power Gain — 20 dB
Drain Efficiency — 45%
Spectral Regrowth @ 400 kHz Offset = - 66 dBc
Spectral Regrowth @ 600 kHz Offset = - 75 dBc
EVM — 2% rms
GSM Application
• Typical GSM Performance: VDD = 28 Volts, IDQ = 1200 mA, Pout =
160 Watts, Full Frequency Band (921 - 960 MHz)
Power Gain — 20 dB
Drain Efficiency — 58%
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 880 MHz, 160 Watts CW
Output Power
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
LIFETIME BUY
880 MHz, 35 W AVG., 28 V
SINGLE N - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465 - 06, STYLE 1
NI - 780
MRF6S9160HR3
CASE 465A - 06, STYLE 1
NI - 780S
MRF6S9160HSR3
Table 1. Maximum Ratings
Symbol
Value
Unit
Drain - Source Voltage
Rating
VDSS
- 0.5, +68
Vdc
Gate - Source Voltage
VGS
- 0.5, +12
Vdc
Storage Temperature Range
Tstg
- 65 to +150
°C
TC
150
°C
TJ
225
°C
Symbol
Value (2,3)
Unit
Case Operating Temperature
Operating Junction Temperature
(1,2)
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 81°C, 160 W CW
Case Temperature 73°C, 35 W CW
RθJC
0.31
0.33
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2005-2006, 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
°C/W
LAST ORDER 3 APR 08 LAST SHIP 1 OCT 08
Document Number: MRF6S9160H
Rev. 2, 8/2008
MRF6S9160HR3 MRF6S9160HSR3
1
Table 3. ESD Protection Characteristics
Class
Human Body Model (per JESD22 - A114)
1A (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
IV (Minimum)
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 68 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate - Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 525 μAdc)
VGS(th)
1
2
3
Vdc
Gate Quiescent Voltage
(VDD = 28 Vdc, ID = 1200 mAdc, Measured in Functional Test)
VGS(Q)
2
3
4
Vdc
Drain - Source On - Voltage
(VGS = 10 Vdc, ID = 3.6 Adc)
VDS(on)
0.1
0.2
0.3
Vdc
Output Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
—
80.2
—
pF
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
2.2
—
pF
Off Characteristics
LIFETIME BUY
On Characteristics
Dynamic Characteristics (1)
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1200 mA, Pout = 35 W Avg. N - CDMA,
f = 880 MHz, Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±750 kHz
Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF
Power Gain
Gps
20
20.9
23
dB
Drain Efficiency
ηD
29
30.5
—
%
ACPR
—
- 46.8
- 45
dBc
IRL
—
- 17
-9
dB
Adjacent Channel Power Ratio
Input Return Loss
Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1200 mA,
Pout = 76 W Avg., 865 MHz<Frequency<895 MHz
Power Gain
Gps
—
20
—
dB
Drain Efficiency
ηD
—
45
—
%
Error Vector Magnitude
EVM
—
2
—
% rms
Spectral Regrowth at 400 kHz Offset
SR1
—
- 66
—
dBc
Spectral Regrowth at 600 kHz Offset
SR2
—
- 75
—
dBc
Typical CW Performances (In Freescale GSM Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1200 mA, Pout = 160 W,
921 MHz<Frequency<960 MHz
Power Gain
Gps
—
20
—
dB
Drain Efficiency
ηD
—
58
—
%
Input Return Loss
IRL
—
- 12
—
dB
P1dB
—
160
—
W
Pout @ 1 dB Compression Point, CW
(f = 940 MHz)
LAST ORDER 3 APR 08 LAST SHIP 1 OCT 08
Test Methodology
1. Part is internally matched on input.
MRF6S9160HR3 MRF6S9160HSR3
2
RF Device Data
Freescale Semiconductor
B2
VBIAS
B1
VSUPPLY
R2
+
C18
C22 C23 C24
L2
C19
C7
L1
RF
INPUT Z1
C21
C20
R1
C16 C17
Z9
C9
Z10
Z11 Z12
Z13
Z14
Z15
Z16 Z17
Z18
C5
Z2
Z3
Z4
Z5
Z6
Z7
C1
LIFETIME BUY
C6
C4
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Z10
0.426″
0.813″
0.471″
0.319″
0.171″
0.200″
0.742″
0.233″
0.128″
0.134″
x 0.080″
x 0.080″
x 0.080″
x 0.220″
x 0.220″
x 0.425″
x 0.630″
x 0.630″
x 0.630″
x 0.630″
RF
OUTPUT
C2
Z8
C8
C3
Z19
C10
C11
C12
C13
C15
C14
DUT
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
x 0.630″ Taper
Microstrip
Microstrip
Microstrip
Microstrip
Z11
Z12
Z13
Z14
Z15
Z16
Z17
Z18
Z19
PCB
0.066″ x 0.630″ Microstrip
0.630″ x 0.425″ x 0.220″ Taper
0.120″ x 0.220″ Microstrip
0.292″ x 0.220″ Microstrip
0.023″ x 0.220″ Microstrip
0.030″ x 0.220″ Microstrip
0.846″ x 0.080″ Microstrip
0.440″ x 0.080″ Microstrip
0.434″ x 0.080″ Microstrip
Arlon CuClad 250GX - 0300 - 55 - 22, 0.030″, εr = 2.55
Figure 1. MRF6S9160HR3(SR3) Test Circuit Schematic
Table 5. MRF6S9160HR3(SR3) Test Circuit Component Designations and Values
Part
Description
Part Number
LAST ORDER 3 APR 08 LAST SHIP 1 OCT 08
+
Manufacturer
B1, B2
Ferrite Beads, Small
2743019447
Fair Rite
C1, C2, C19
47 pF Chip Capacitors
ATC100B470JT500XT
ATC
C3, C11
0.8 - 8.0 pF Variable Capacitors, Gigatrim
27291SL
Johanson
C4
2.7 pF Chip Capacitor
ATC100B2R7JT500XT
ATC
C5, C6
15 pF Chip Capacitors
ATC100B150JT500XT
ATC
C7, C8
12 pF Chip Capacitors
ATC100B120JT500XT
ATC
C9, C10
4.3 pF Chip Capacitors
ATC100B4R3JT500XT
ATC
C12
8.2 pF Chip Capacitor
ATC100B8R2JT500XT
ATC
C13, C14
3.9 pF Chip Capacitors
ATC100B3R9JT500XT
ATC
C15
0.6 - 4.5 pF Variable Capacitor, Gigatrim
27271SL
Johanson
C16
22 pF Chip Capacitor
ATC100B220JT500XT
ATC
C17
1 μF, 50 V Tantalum Capacitor
T491C105K0J0AT
Kemit
C18
20K pF Chip Capacitor
CDR35BP203AKYS
Kemit
C20
180 pF Chip Capacitor
ATC100B181JT500XT
ATC
C21, C22, C23
10 μF, 50 V Chip Capacitors
GRM55DR61H106KA88B
Murata
C24
470 μF, 63 V Electrolytic Capacitor
EKME630ELL471MK25S
United Chemi - Con
L1, L2
10 nH Inductors
0603HC
Coilcraft
R1
180 Ω, 1/4 W Chip Resistor
CRCW12061800FKEA
Vishay
R2
10 Ω, 1/4 W Chip Resistor
CRCW120610R0FKEA
Vishay
MRF6S9160HR3 MRF6S9160HSR3
RF Device Data
Freescale Semiconductor
3
C24
C16
C18
C17
B2
900 MHz
Rev. 2
C21
R2
C22 C23
R1
C19
C20
L1
C7 C9
C5
L2
C1
C3
C4
LIFETIME BUY
C6
CUT OUT AREA
C14
C12 C13
C8 C10 C11
Figure 2. MRF6S9160HR3(SR3) Test Circuit Component Layout
C15
C2
LAST ORDER 3 APR 08 LAST SHIP 1 OCT 08
B1
MRF6S9160HR3 MRF6S9160HSR3
4
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
Gps, POWER GAIN (dB)
20.3
28
26
20
19.7
24
VDD = 28 Vdc, Pout = 35 W (Avg.)
IDQ = 1200 mA, N−CDMA IS−95 (Pilot, Sync,
Paging, Traffic Codes 8 Through 13)
19.4
−40
−45
19.1
18.8
−50
ACPR
18.5
−55
IRL
ALT1
18.2
−60
17.9
840
850
860
870
880
890
900
910
−65
920
−5
−8
−11
−14
−17
−20
f, FREQUENCY (MHz)
44
20
42
Gps, POWER GAIN (dB)
19.7
38
19.4
36
VDD = 28 Vdc, Pout = 70 W (Avg.)
IDQ = 1200 mA, N−CDMA IS−95 (Pilot, Sync,
Paging, Traffic Codes 8 Through 13)
19.1
18.8
−30
−36
18.5
ACPR
18.2
−42
IRL
17.9
−48
−54
ALT1
17.6
17.3
840
850
860
870
880
890
900
910
−60
920
−3
−6
−9
−12
−15
−18
f, FREQUENCY (MHz)
Figure 4. Single - Carrier N - CDMA Broadband Performance
@ Pout = 70 Watts Avg.
23
IDQ = 1800 mA
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
−10
22
Gps, POWER GAIN (dB)
40
Gps
IRL, INPUT RETURN LOSS (dB)
ηD
ηD, DRAIN
EFFICIENCY (%)
20.3
ACPR (dBc), ALT1 (dBc)
LIFETIME BUY
Figure 3. Single - Carrier N - CDMA Broadband Performance
@ Pout = 35 Watts Avg.
1500 mA
21
20
1200 mA
19
900 mA
18
600 mA
17
VDD = 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz
Two−Tone Measurements, 100 kHz Tone Spacing
16
−20
VDD = 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz
Two−Tone Measurements, 100 kHz Tone Spacing
−30
IDQ = 600 mA
−40
900 mA
−50
1500 mA
1800 mA
1200 mA
−60
−70
15
1
10
100
400
1
10
100
400
Pout, OUTPUT POWER (WATTS) PEP
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus
Output Power
Figure 6. Third Order Intermodulation Distortion
versus Output Power
LAST ORDER 3 APR 08 LAST SHIP 1 OCT 08
30
Gps
IRL, INPUT RETURN LOSS (dB)
ηD
20.6
ηD, DRAIN
EFFICIENCY (%)
32
ACPR (dBc), ALT1 (dBc)
20.9
MRF6S9160HR3 MRF6S9160HSR3
RF Device Data
Freescale Semiconductor
5
−30
−40
−50
3rd Order
−60
5th Order
−70
7th Order
−80
10
100
VDD = 28 Vdc, Pout = 70 W (Avg.)
IDQ = 1200 mA, Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 880 MHz
−10
−20
3rd Order
−30
−40
5th Order
−50
7th Order
−60
−70
0.1
400
10
1
100
Pout, OUTPUT POWER (WATTS) PEP
TWO−TONE SPACING (MHz)
Figure 7. Intermodulation Distortion Products
versus Output Power
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
61
Ideal
P6dB = 54.7 dBm (294.78 W)
59
P3dB = 53.98 dBm (249.98 W)
57
P1dB = 53.02 dBm (200.36 W)
55
Actual
53
51
VDD = 28 Vdc, IDQ = 1200 mA
Pulsed CW, 8 μsec(on), 1 msec(off)
f = 880 MHz
49
47
26
28
30
32
34
36
38
40
Pin, INPUT POWER (dBm)
Figure 9. Pulsed CW Output Power versus
Input Power
ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB)
LIFETIME BUY
1
0
60
VDD = 28 Vdc, IDQ = 1200 mA
f = 880 MHz, N−CDMA IS−95
(Pilot, Sync, Paging, Traffic Codes
8 Through 13)
50
−20
TC = −30_C
−30
−30_C
40
25_C
85_C
−40
25_C
85_C
30
ACPR
20
Gps
−50
−30_C
−60
ηD
85_C
25_C −70
10
ALT1
0
1
10
100
−80
300
Pout, OUTPUT POWER (WATTS) AVG.
Figure 10. Single - Carrier N - CDMA ACPR, ALT1, Power Gain
and Drain Efficiency versus Output Power
LAST ORDER 3 APR 08 LAST SHIP 1 OCT 08
VDD = 28 Vdc, IDQ = 1200 mA
f1 = 880 MHz, f2 = 880.1 MHz
Two−Tone Measurements
ACPR (dBc), ALT1 (dBc)
−20
IMD, INTERMODULATION DISTORTION (dBc)
−10
Pout, OUTPUT POWER (dBm)
IMD, INTERMODULATION DISTORTION (dBc)
TYPICAL CHARACTERISTICS
MRF6S9160HR3 MRF6S9160HSR3
6
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
23
21
70
85_C
60
50
21
25_C
20
19
40
30
85_C
ηD
18
20
VDD = 28 Vdc
IDQ = 1200 mA
f = 880 MHz
17
18
32 V
28 V
VDD = 24 V
17
IDQ = 1200 mA
f = 880 MHz
0
300
100
16
0
50
100
150
200
250
Pout, OUTPUT POWER (WATTS) CW
Pout, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain and Drain Efficiency
versus CW Output Power
Figure 12. Power Gain versus Output Power
108
MTTF (HOURS)
LIFETIME BUY
10
19
10
16
1
20
Gps, POWER GAIN (dB)
Gps
TC = −30_C
ηD, DRAIN EFFICIENCY (%)
Gps, POWER GAIN (dB)
22
107
106
105
90
110
130
150
170
190
210
230
250
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours when the device
is operated at VDD = 28 Vdc, Pout = 35 W Avg., and ηD = 30.5%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 13. MTTF versus Junction Temperature
LAST ORDER 3 APR 08 LAST SHIP 1 OCT 08
−30_C
300
MRF6S9160HR3 MRF6S9160HSR3
RF Device Data
Freescale Semiconductor
7
100
−10
−20
−30
1
−40
−50
0.1
(dB)
PROBABILITY (%)
10
IS−95 CDMA (Pilot, Sync, Paging, Traffic Codes 8
Through 13) 1.2288 MHz Channel Bandwidth
Carriers. ACPR Measured in 30 kHz Bandwidth @
±750 kHz Offset. ALT1 Measured in 30 kHz
Bandwidth @ ±1.98 MHz Offset. PAR = 9.8 dB @
0.01% Probability on CCDF.
0.01
0.001
−60
−70
−80
−90
0.0001
0
2
4
6
8
10
1.2288 MHz
Channel BW
.. ..................................................
. . . .
............
..
..
..
..
..
..
.
..
...
.
..
.
−ALT1 in 30 kHz
+ALT1 in 30 kHz
.
..
.
Integrated BW
Integrated BW
..................
.........
..........
.....
..........
.
. ................
...... ... ..
.
.
.
.
.
.
.
..............
.................
.........
...........
...
......
......
.........
..........
.
.
.
.
.
.
.
.
.
.........
......
.
.
.
....... −ACPR in 30 kHz +ACPR in 30 kHz ..................
.
.
.
.
..
....
.
.
............
.......
...............
.
........
.
................
...
.
.
.
.
.
Integrated BW
Integrated BW
........
......
...........
......
...
..........
...........
−100
LIFETIME BUY
PEAK−TO−AVERAGE (dB)
Figure 14. Single - Carrier CCDF N - CDMA
−110
−3.6 −2.9 −2.2
−1.5 −0.7
0
0.7
1.5
2.2
2.9
f, FREQUENCY (MHz)
Figure 15. Single - Carrier N - CDMA Spectrum
3.6
LAST ORDER 3 APR 08 LAST SHIP 1 OCT 08
N - CDMA TEST SIGNAL
MRF6S9160HR3 MRF6S9160HSR3
8
RF Device Data
Freescale Semiconductor
LAST ORDER 3 APR 08 LAST SHIP 1 OCT 08
f = 910 MHz
Zload
f = 850 MHz
Zo = 2 Ω
LIFETIME BUY
f = 910 MHz
Zsource
f = 850 MHz
VDD = 28 Vdc, IDQ = 1200 mA, Pout = 35 W Avg.
f
MHz
Zsource
Ω
Zload
Ω
850
0.61 - j1.27
1.20 + j0.03
865
0.66 - j1.15
1.26 + j0.15
880
0.64 - j1.05
1.31 + j0.22
895
0.55 - j0.90
1.32 + j0.28
910
0.48 - j0.74
1.26 + j0.32
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 16. Series Equivalent Source and Load Impedance
MRF6S9160HR3 MRF6S9160HSR3
RF Device Data
Freescale Semiconductor
9
PACKAGE DIMENSIONS
B
G
Q
bbb
2X
1
T A
M
M
B
M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
3
B
K
2
(FLANGE)
D
bbb
M
T A
B
M
M
M
bbb
N
R
(INSULATOR)
M
T A
M
B
M
ccc
M
T A
M
M
aaa
M
T A
M
ccc
H
B
S
(LID)
M
T A
M
B
(LID)
M
(INSULATOR)
B
M
C
F
E
T
A
A
SEATING
PLANE
INCHES
MIN
MAX
1.335
1.345
0.380
0.390
0.125
0.170
0.495
0.505
0.035
0.045
0.003
0.006
1.100 BSC
0.057
0.067
0.170
0.210
0.774
0.786
0.772
0.788
.118
.138
0.365
0.375
0.365
0.375
0.005 REF
0.010 REF
0.015 REF
MILLIMETERS
MIN
MAX
33.91
34.16
9.65
9.91
3.18
4.32
12.57
12.83
0.89
1.14
0.08
0.15
27.94 BSC
1.45
1.70
4.32
5.33
19.66
19.96
19.60
20.00
3.00
3.51
9.27
9.53
9.27
9.52
0.127 REF
0.254 REF
0.381 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
CASE 465 - 06
ISSUE G
NI - 780
MRF6S9160HR3
(FLANGE)
DIM
A
B
C
D
E
F
G
H
K
M
N
Q
R
S
aaa
bbb
ccc
4X U
(FLANGE)
4X Z
(LID)
B
1
K
2X
2
B
(FLANGE)
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
D
bbb
M
T A
M
B
M
N
ccc
M
R
(LID)
M
T A
M
B
M
ccc
M
T A
S
(INSULATOR)
bbb
M
T A
M
M
B
M
aaa
M
T A
M
(LID)
B
M
(INSULATOR)
B
M
H
C
3
E
A
A
F
T
SEATING
PLANE
(FLANGE)
CASE 465A - 06
ISSUE H
NI - 780S
MRF6S9160HSR3
DIM
A
B
C
D
E
F
H
K
M
N
R
S
U
Z
aaa
bbb
ccc
INCHES
MIN
MAX
0.805
0.815
0.380
0.390
0.125
0.170
0.495
0.505
0.035
0.045
0.003
0.006
0.057
0.067
0.170
0.210
0.774
0.786
0.772
0.788
0.365
0.375
0.365
0.375
−−− 0.040
−−− 0.030
0.005 REF
0.010 REF
0.015 REF
MILLIMETERS
MIN
MAX
20.45
20.70
9.65
9.91
3.18
4.32
12.57
12.83
0.89
1.14
0.08
0.15
1.45
1.70
4.32
5.33
19.61
20.02
19.61
20.02
9.27
9.53
9.27
9.52
−−−
1.02
−−−
0.76
0.127 REF
0.254 REF
0.381 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
5. SOURCE
MRF6S9160HR3 MRF6S9160HSR3
10
RF Device Data
Freescale Semiconductor
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
• AN1987: Quiescent Current Control for the RF Integrated Circuit Device Family
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
2
Aug. 2008
Description
• Listed replacement part and Device Migration notification reference number, p. 1
• Removed Lower Thermal Resistance and Low Gold Plating bullets from Features section as functionality
is standard, p. 1
• Removed Total Device Dissipation from Max Ratings table as data was redundant (information already
provided in Thermal Characteristics table), p. 1
• Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table and related
“Continuous use at maximum temperature will affect MTTF” footnote added, p. 1
• Corrected VDS to VDD in the RF test condition voltage callout for VGS(Q), On Characteristics table, p. 2
• Removed Forward Transconductance from On Characteristics table as it no longer provided usable
information, p. 2
• Updated PCB information to show more specific material details, Fig. 1, Test Circuit Schematic, p. 3
• Updated Part Numbers in Table 5, Component Designations and Values, to latest RoHS compliant part
numbers, p. 3
• Adjusted scale for Fig. 8, Intermodulation Distortion Products versus Tone Spacing, to show wider
dynamic range, p. 6
• Removed lower voltage tests from Fig. 12, Power Gain versus Output Power, due to fixed tuned fixture
limitations, p. 7
• Replaced Fig. 13, MTTF versus Junction Temperature with updated graph. Removed Amps2 and listed
operating characteristics and location of MTTF calculator for device, p. 7
• Added Product Documentation and Revision History, p. 11
MRF6S9160HR3 MRF6S9160HSR3
RF Device Data
Freescale Semiconductor
11
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MRF6S9160HR3 MRF6S9160HSR3
Document Number: MRF6S9160H
Rev. 2, 8/2008
12
RF Device Data
Freescale Semiconductor