Freescale Semiconductor Technical Data MRF6S9045NR1 replaced by MRFE6S9045NR1. Refer to Device Migration PCN12895 for more details. MRF6S9045NBR1 no longer manufactured. RF Power Field Effect Transistors MRF6S9045NR1 MRF6S9045NBR1 N - Channel Enhancement - Mode Lateral MOSFETs LIFETIME BUY Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 28 volt base station equipment. • Typical Single - Carrier N - CDMA Performance @ 880 MHz, VDD = 28 Volts, IDQ = 350 mA, Pout = 10 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain — 22.7 dB Drain Efficiency — 32% ACPR @ 750 kHz Offset — - 47 dBc in 30 kHz Bandwidth GSM EDGE Application • Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 350 mA, Pout = 16 Watts Avg., Full Frequency Band (921 - 960 MHz) Power Gain — 20 dB Drain Efficiency — 46% Spectral Regrowth @ 400 kHz Offset = - 62 dBc Spectral Regrowth @ 600 kHz Offset = - 78 dBc EVM — 1.5% rms GSM Application • Typical GSM Performance: VDD = 28 Volts, IDQ = 350 mA, Pout = 45 Watts, Full Frequency Band (921 - 960 MHz) Power Gain — 20 dB Drain Efficiency — 68% • Capable of Handling 5:1 VSWR, @ 28 Vdc, 880 MHz, 45 Watts CW Output Power Features • Characterized with Series Equivalent Large - Signal Impedance Parameters • Integrated ESD Protection • 225°C Capable Plastic Package • N Suffix Indicates Lead - Free Terminations. RoHS Compliant. • TO - 270 - 2 in Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel. • TO - 272 - 2 in Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. 880 MHz, 10 W AVG., 28 V SINGLE N - CDMA LATERAL N - CHANNEL BROADBAND RF POWER MOSFETs CASE 1265- 09, STYLE 1 TO - 270 - 2 PLASTIC MRF6S9045NR1 CASE 1337 - 04, STYLE 1 TO - 272 - 2 PLASTIC MRF6S9045NBR1 Table 1. Maximum Ratings Rating Symbol Value Unit Drain - Source Voltage VDSS - 0.5, +68 Vdc Gate - Source Voltage VGS - 0.5, + 12 Vdc Storage Temperature Range Tstg - 65 to +150 °C Case Operating Temperature TC 150 °C Operating Junction Temperature (1,2) TJ 225 °C 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. © Freescale Semiconductor, Inc., 2005-2006, 2008. All rights reserved. RF Device Data Freescale Semiconductor LAST ORDER 3 APR 08 LAST SHIP 1 OCT 08 Document Number: MRF6S9045N Rev. 4, 8/2008 MRF6S9045NR1 MRF6S9045NBR1 1 Table 2. Thermal Characteristics Value (1,2) Symbol Thermal Resistance, Junction to Case Case Temperature 81°C, 45 W CW Case Temperature 79°C, 10 W CW RθJC Unit °C/W 1.0 1.1 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22 - A114) 1A (Minimum) Machine Model (per EIA/JESD22 - A115) A (Minimum) Charge Device Model (per JESD22 - C101) IV (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating Package Peak Temperature Unit 3 260 °C LIFETIME BUY Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 200 μA) VGS(th) 1 2 3 Vdc Gate Quiescent Voltage (VDD = 28 Vdc, ID = 350 mAdc, Measured in Functional Test) VGS(Q) 2 2.9 4 Vdc Drain - Source On - Voltage (VGS = 10 Vdc, ID = 1.0 Adc) VDS(on) — 0.22 0.3 Vdc Input Capacitance (VDS = 28 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz) Ciss — 77 — pF Output Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss — 27 — pF Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 0.78 — pF Characteristic Off Characteristics On Characteristics Dynamic Characteristics Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 350 mA, Pout = 10 W Avg., f = 880 MHz, Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±750 kHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF Power Gain Gps 21 22.7 25 dB Drain Efficiency ηD 30.5 32 — % ACPR — - 47 - 45 dBc IRL — - 20 - 20 -9 -7 Adjacent Channel Power Ratio Input Return Loss MRF6S9045NR1 MRF6S9045NBR1 dB 1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. LAST ORDER 3 APR 08 LAST SHIP 1 OCT 08 Characteristic (continued) MRF6S9045NR1 MRF6S9045NBR1 2 RF Device Data Freescale Semiconductor Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued) Symbol Min Typ Max Unit Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture Optimized for 921 - 960 MHz, 50 ohm system) VDD = 28 Vdc, IDQ = 350 mA, Pout = 16 W Avg., f = 921 - 960 MHz, GSM EDGE Signal Power Gain Gps — 20 — dB Drain Efficiency ηD — 46 — % Error Vector Magnitude EVM — 1.5 — % Spectral Regrowth at 400 kHz Offset SR1 — - 62 — dBc Spectral Regrowth at 600 kHz Offset SR2 — - 78 — dBc Typical CW Performances (In Freescale GSM Test Fixture Optimized for 921 - 960 MHz, 50 ohm system) VDD = 28 Vdc, IDQ = 350 mA, Pout = 45 W, f = 921 - 960 MHz Power Gain Gps — 20 — dB Drain Efficiency ηD — 68 — % IRL — - 12 — dB P1dB — 52 — W Input Return Loss LIFETIME BUY Pout @ 1 dB Compression Point (f = 940 MHz) LAST ORDER 3 APR 08 LAST SHIP 1 OCT 08 Characteristic MRF6S9045NR1 MRF6S9045NBR1 RF Device Data Freescale Semiconductor 3 B2 R1 VBIAS R2 C15 C7 L1 + C16 C17 C18 C8 Z10 Z11 Z12 Z13 Z14 Z15 C11 C12 C13 RF Z16 OUTPUT C5 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 C14 C9 C1 DUT C2 LIFETIME BUY + R3 + RF INPUT C10 L2 VSUPPLY + Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 0.215″ 0.221″ 0.500″ 0.460″ 0.040″ 0.280″ 0.087″ 0.435″ 0.057″ x 0.065″ x 0.065″ x 0.100″ x 0.270″ x 0.270″ x 0.270″ x 0.525″ x 0.525″ x 0.525″ C3 C4 C6 Microstrip Microstrip Microstrip Microstrip Microstrip x 0.530″ Taper Microstrip Microstrip Microstrip Z10 Z11 Z12 Z13 Z14 Z15 Z16 PCB 0.360″ x 0.270″ Microstrip 0.063″ x 0.270″ Microstrip 0.360″ x 0.065″ Microstrip 0.095″ x 0.065″ Microstrip 0.800″ x 0.065″ Microstrip 0.260″ x 0.065″ Microstrip 0.325″ x 0.065″ Microstrip Taconic RF - 35 0.030″, εr = 3.5 Figure 1. MRF6S9045NR1(NBR1) Test Circuit Schematic Table 6. MRF6S9045NR1(NBR1) Test Circuit Component Designations and Values Part Description Part Number Manufacturer B1 Ferrite Bead 2743019447 Fair Rite B2 Ferrite Bead 2743021447 Fair Rite C1, C7, C10, C14 47 pF Chip Capacitors ATC100B470JT500XT ATC C2, C4, C12 0.8 - 8.0 pF Variable Capacitors, Gigatrim 27291SL Johanson C3 15 pF Chip Capacitor ATC100B150JT500XT ATC C5, C6 12 pF Chip Capacitors ATC100B120JT500XT ATC C8, C9 13 pF Chip Capacitors ATC100B130JT500XT ATC C11 7.5 pF Chip Capacitor ATC100B7R5JT500XT ATC C13 0.6 - 4.5 pF Variable Capacitor, Gigatrim 27271SL Johanson C15, C16, C17 10 μF, 35 V Tantalum Capacitors T491D106K035AT Kemet C18 220 μF, 50 V Electrolytic Capacitor EMVY500ADA221MJA0G Nippon Chemi - Con L1, L2 12.5 nH Inductor A04T - 5 Coilcraft R1 1 kΩ, 1/4 W Chip Resistor CRCW12061001FKEA Vishay R2 560 kΩ, 1/4 W Chip Resistor CRCW12065600FKEA Vishay R3 12 Ω, 1/4 W Chip Resistor CRCW120612R0FKEA Vishay LAST ORDER 3 APR 08 LAST SHIP 1 OCT 08 B1 MRF6S9045NR1 MRF6S9045NBR1 4 RF Device Data Freescale Semiconductor R2 C18 R3 R1 VGG VDD B1 C16 C17 B2 C7 C10 L2 C5 L1 C1 C4 LIFETIME BUY C3 C6 CUT OUT AREA C8 C2 C14 C9 C11 C13 C12 TO−270/272 Surface / Bolt down Figure 2. MRF6S9045NR1(NBR1) Test Circuit Component Layout LAST ORDER 3 APR 08 LAST SHIP 1 OCT 08 C15 MRF6S9045NR1 MRF6S9045NBR1 RF Device Data Freescale Semiconductor 5 33 32 VDD = 28 Vdc, Pout = 10 W (Avg.) IDQ = 350 mA, N−CDMA IS−95 Pilot Sync, Paging, Traffic Codes 8 Through 13 22.2 31 −45 22 21.8 −50 ACPR 21.6 −55 IRL 21.4 21.2 −60 −65 ALT1 21 850 −70 860 870 880 890 900 −5 −10 −15 −20 −25 −30 910 46 22.2 22 21.8 47 VDD = 28 Vdc, Pout = 20 W (Avg.) IDQ = 350 mA, N−CDMA IS−95 Pilot Sync, Paging, Traffic Codes 8 Through 13 21.6 45 −40 ACPR 21.4 −45 IRL 21.2 21 20.8 850 −50 ALT1 −55 −60 860 870 880 890 −5 −35 900 −10 −15 −20 −25 −30 910 IRL, INPUT RETURN LOSS (dB) ηD 22.4 f, FREQUENCY (MHz) Figure 4. Single - Carrier N - CDMA Broadband Performance @ Pout = 20 Watts Avg. 24 −10 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) IDQ = 520 mA 23 Gps, POWER GAIN (dB) 48 Gps ACPR (dBc), ALT1 (dBc) 22.6 ηD, DRAIN EFFICIENCY (%) Figure 3. Single - Carrier N - CDMA Broadband Performance @ Pout = 10 Watts Avg. Gps, POWER GAIN (dB) LIFETIME BUY f, FREQUENCY (MHz) 475 mA 350 mA 22 275 mA 21 175 mA 20 VDD = 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz Two−Tone Measurements −20 VDD = 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz Two−Tone Measurements −30 IDQ = 175 mA −40 275 mA 350 mA −50 520 mA −60 475 mA −70 19 1 10 100 1 10 100 Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) PEP Figure 5. Two - Tone Power Gain versus Output Power Figure 6. Third Order Intermodulation Distortion versus Output Power LAST ORDER 3 APR 08 LAST SHIP 1 OCT 08 Gps, POWER GAIN (dB) 22.4 34 ηD 22.6 IRL, INPUT RETURN LOSS (dB) Gps 22.8 ACPR (dBc), ALT1 (dBc) 35 23 ηD, DRAIN EFFICIENCY (%) TYPICAL CHARACTERISTICS MRF6S9045NR1 MRF6S9045NBR1 6 RF Device Data Freescale Semiconductor VDD = 28 Vdc, IDQ = 350 mA, f1 = 880 MHz f2 = 880.1 MHz, Two−Tone Measurements −30 −40 3rd Order −50 5th Order −60 −70 7th Order −80 10 VDD = 28 Vdc, Pout = 45 W (PEP), IDQ = 350 mA f1 = 880 MHz, f2 = 880.1 MHz, Two−Tone Measurements (f1 + f2)/2 = Center Frequency of 880 MHz −20 3rd Order −30 −40 5th Order −50 7th Order −60 −70 0.05 0.1 100 1 10 100 Pout, OUTPUT POWER (WATTS) PEP TWO−TONE SPACING (MHz) Figure 7. Intermodulation Distortion Products versus Output Power Figure 8. Intermodulation Distortion Products versus Tone Spacing 54 53 Ideal P3dB = 48.6 dBm (72.44 W) 52 51 50 P1dB = 48.2 dBm (66.07 W) 49 Actual 48 47 VDD = 28 Vdc, IDQ = 350 mA Pulsed CW, 8 μsec(on), 1 msec(off) Center Frequency = 880 MHz 46 45 44 23 24 25 26 27 28 29 30 31 32 33 Pin, INPUT POWER (dBm) Figure 9. Pulsed CW Output Power versus Input Power ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) LIFETIME BUY 1 −10 60 ηD VDD = 28 Vdc, IDQ = 350 mA f = 880 MHz, N−CDMA IS−95 Pilot Sync, Paging, Traffic Codes 8 Through 13 25_C ALT1 50 40 85_C −25 25_C −35 −30_C 25_C −45 85_C 30 −55 Gps TC = 25_C −30_C 20 −65 ACPR 10 −75 0 1 10 −85 50 Pout, OUTPUT POWER (WATTS) AVG. Figure 10. Single - Carrier N - CDMA ACPR, ALT1, Power Gain and Drain Efficiency versus Output Power ACPR, ADJACENT CHANNEL POWER RATIO (dBc) ALT1, CHANNEL POWER (dBc) −20 LAST ORDER 3 APR 08 LAST SHIP 1 OCT 08 0 IMD, INTERMODULATION DISTORTION (dBc) −10 Pout, OUTPUT POWER (dBm) IMD, INTERMODULATION DISTORTION (dBc) TYPICAL CHARACTERISTICS MRF6S9045NR1 MRF6S9045NBR1 RF Device Data Freescale Semiconductor 7 TYPICAL CHARACTERISTICS TC = −30_C 70 25_C 60 22 85_C 25_C 21 50 85_C 20 40 19 30 18 20 ηD VDD = 28 Vdc IDQ = 350 mA f = 880 MHz 17 16 1 ηD, DRAIN EFFICIENCY (%) Gps, POWER GAIN (dB) 23 80 −30_C Gps 10 0 10 100 Figure 11. Power Gain and Drain Efficiency versus CW Output Power Gps, POWER GAIN (dB) 23.5 23 22.5 22 21.5 21 20.5 20 19.5 32 V 28 V 19 18.5 18 17.5 VDD = 24 V 0 10 20 30 40 50 60 IDQ = 350 mA f = 880 MHz 70 80 90 100 Pout, OUTPUT POWER (WATTS) CW Figure 12. Power Gain versus Output Power 108 MTTF (HOURS) LIFETIME BUY Pout, OUTPUT POWER (WATTS) CW 107 106 105 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 28 Vdc, Pout = 10 W Avg., and ηD = 32%. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. LAST ORDER 3 APR 08 LAST SHIP 1 OCT 08 24 Figure 13. MTTF Factor versus Junction Temperature MRF6S9045NR1 MRF6S9045NBR1 8 RF Device Data Freescale Semiconductor 100 −10 −20 −30 1 −40 −50 0.1 (dB) PROBABILITY (%) 10 IS−95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 1.2288 MHz Channel Bandwidth Carriers. ACPR Measured in 30 kHz Bandwidth @ ±750 kHz Offset. ALT1 Measured in 30 kHz Bandwidth @ ±1.98 MHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. 0.01 0.001 −60 −70 −80 −90 0.0001 0 2 4 6 8 10 1.2288 MHz Channel BW .. .................................................. . . . . ............ .. .. .. .. .. .. . .. ... . .. . −ALT1 in 30 kHz +ALT1 in 30 kHz . .. . Integrated BW Integrated BW .................. ......... .......... ..... .......... . . ................ ...... ... .. . . . . . . . .............. ................. ......... ........... ... ...... ...... ......... .......... . . . . . . . . . ......... ...... . . . ....... −ACPR in 30 kHz +ACPR in 30 kHz .................. . . . . .. .... . . ............ ....... ............... . ........ . ................ ... . . . . . Integrated BW Integrated BW ........ ...... ........... ...... ... .......... ........... −100 LIFETIME BUY PEAK−TO−AVERAGE (dB) Figure 14. Single - Carrier CCDF N - CDMA −110 −3.6 −2.9 −2.2 −1.5 −0.7 0 0.7 1.5 2.2 2.9 f, FREQUENCY (MHz) Figure 15. Single - Carrier N - CDMA Spectrum 3.6 LAST ORDER 3 APR 08 LAST SHIP 1 OCT 08 N - CDMA TEST SIGNAL MRF6S9045NR1 MRF6S9045NBR1 RF Device Data Freescale Semiconductor 9 LIFETIME BUY f = 910 MHz f = 850 MHz Zsource Zload f = 910 MHz f = 850 MHz VDD = 28 Vdc, IDQ = 350 mA, Pout = 10 W Avg. f MHz Zsource Ω Zload Ω 850 0.42 + j0.30 3.05 + j1.27 865 0.42 + j0.44 3.16 + j1.33 880 0.45 + j0.60 3.31 + j1.33 895 0.48 + j0.74 3.43 + j1.20 910 0.50 + j0.85 3.35 + j1.05 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load LAST ORDER 3 APR 08 LAST SHIP 1 OCT 08 Zo = 5 Ω Figure 16. Series Equivalent Source and Load Impedance MRF6S9045NR1 MRF6S9045NBR1 10 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MRF6S9045NR1 MRF6S9045NBR1 RF Device Data Freescale Semiconductor 11 MRF6S9045NR1 MRF6S9045NBR1 12 RF Device Data Freescale Semiconductor MRF6S9045NR1 MRF6S9045NBR1 RF Device Data Freescale Semiconductor 13 MRF6S9045NR1 MRF6S9045NBR1 14 RF Device Data Freescale Semiconductor MRF6S9045NR1 MRF6S9045NBR1 RF Device Data Freescale Semiconductor 15 MRF6S9045NR1 MRF6S9045NBR1 16 RF Device Data Freescale Semiconductor PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Application Notes • AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages • AN1955: Thermal Measurement Methodology of RF Power Amplifiers • AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over - Molded Plastic Packages Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices REVISION HISTORY The following table summarizes revisions to this document. Revision Date 4 Aug. 2008 Description • Listed replacement part and Device Migration notification reference number, p. 1 • Listed MRF6S9045NBR1 as no longer manufactured, p. 1 • Replaced Case Outline 1265 - 08 with 1265 - 09, Issue K, p. 1, 11 - 13. Corrected cross hatch pattern in bottom view and changed its dimensions (D2 and E3) to minimum value on source contact (D2 changed from Min - Max .290 - .320 to .290 Min; E3 changed from Min - Max .150 - .180 to .150 Min). Added JEDEC Standard Package Number. • Replaced Case Outline 1337 - 03 with 1337 - 04, p. 1, 14 - 16. Issue D: Removed Drain - ID label from View Y - Y on Sheet 2. Renamed E2 to E3. Added cross - hatch region dimensions D2 and E2. Added JEDEC Standard Package Number. Issue E: Corrected document number 98ASA99191D on Sheet 3. • Removed Total Device Dissipation from Max Ratings table as data was redundant (information already provided in Thermal Characteristics table), p. 1 • Added Case Operating Temperature limit to the Maximum Ratings table and set limit to 150°C, p. 1 • Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table, related “Continuous use at maximum temperature will affect MTTF” footnote added and changed 200°C to 225°C in Capable Plastic Package bullet, p. 1 • Corrected VDS to VDD in the RF test condition voltage callout for VGS(Q) and added “Measured in Functional Test”, On Characteristics table, p. 2 • Removed Forward Transconductance from On Characteristics table as it no longer provided usable information, p. 2 • Corrected Ciss test condition to indicate AC stimulus on the VGS connection versus the VDS connection, Dynamic Characteristics table, p. 2 • Updated Part Numbers in Table 6 Component Designations and Values, to latest RoHS compliant part numbers, p. 4 • Adjusted scale for Fig. 5, Two - Tone Power Gain versus Output Power, to better match the device’s capabilities, p. 6 • Removed lower voltage tests from Fig. 12, Power Gain versus Output Power, due to fixed tuned fixture limitations, p. 8 • Replaced Fig. 13, MTTF versus Junction Temperature with updated graph. Removed Amps2 and listed operating characteristics and location of MTTF calculator for device, p. 8 • Added Product Documentation and Revision History, p. 17 MRF6S9045NR1 MRF6S9045NBR1 RF Device Data Freescale Semiconductor 17 How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) www.freescale.com/support Japan: Freescale Semiconductor Japan Ltd. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2005-2006, 2008. All rights reserved. RoHS-compliant and/or Pb-free versions of Freescale products have the functionality and electrical characteristics of their non-RoHS-compliant and/or non-Pb-free counterparts. For further information, see http://www.freescale.com or contact your Freescale sales representative. For information on Freescale’s Environmental Products program, go to http://www.freescale.com/epp. MRF6S9045NR1 MRF6S9045NBR1 Document Number: MRF6S9045N Rev. 4, 8/2008 18 RF Device Data Freescale Semiconductor