Freescale Semiconductor Technical Data Document Number: MRF5S9070NR1 Rev. 6, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5S9070NR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device make it ideal for large - signal, common - source amplifier applications in 26 volt base station equipment. • Typical Single - Carrier N - CDMA Performance @ 880 MHz, VDD = 26 Volts, IDQ = 600 mA, Pout = 14 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Power Gain — 17.8 dB Drain Efficiency — 30% ACPR @ 750 kHz Offset — - 47 dBc in 30 kHz Bandwidth • Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 70 Watts CW Output Power Features • Characterized with Series Equivalent Large - Signal Impedance Parameters • Integrated ESD Protection • 200°C Capable Plastic Package • N Suffix Indicates Lead - Free Terminations. RoHS Compliant. • In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel. 880 MHz, 70 W, 26 V SINGLE N - CDMA LATERAL N - CHANNEL BROADBAND RF POWER MOSFET CASE 1265 - 08, STYLE 1 TO - 270 - 2 PLASTIC Table 1. Maximum Ratings Rating Symbol Value Unit Drain - Source Voltage VDSS - 0.5, + 68 Vdc Gate - Source Voltage VGS - 0.5, + 15 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 219 1.25 W W/°C Storage Temperature Range Tstg - 65 to +150 °C Operating Junction Temperature TJ 200 °C Symbol Value (1,2) Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 70 W CW Case Temperature 78°C, 14 W CW RθJC Unit °C/W 0.80 0.93 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22 - A114) 2 (Minimum) Machine Model (per EIA/JESD22 - A115) A (Minimum) Charge Device Model (per JESD22 - C101) IV (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating Package Peak Temperature Unit 1 260 °C 1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2006. All rights reserved. RF Device Data Freescale Semiconductor MRF5S9070NR1 1 Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 26 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 200 μA) VGS(th) 2 2.7 4 Vdc Gate Quiescent Voltage (VDS = 26 Vdc, ID = 600 mAdc) VGS(Q) — 3.7 — Vdc Drain - Source On - Voltage (VGS = 10 Vdc, ID = 1.0 Adc) VDS(on) — 0.18 0.22 Vdc gfs — 4.7 — S Input Capacitance (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Ciss — 126 — pF Output Capacitance (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss — 34 — pF Reverse Transfer Capacitance (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 1.37 — pF Off Characteristics On Characteristics Forward Transconductance (VDS = 10 Vdc, ID = 4 Adc) Dynamic Characteristic Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 26 Vdc, IDQ = 600 mA, Pout = 14 W Avg., f = 880 MHz, Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±750 kHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF Power Gain Gps 17 17.8 — dB Drain Efficiency ηD 29 30 — % ACPR — - 47 - 45 dBc IRL — - 19 -9 dB Adjacent Channel Power Ratio Input Return Loss Typical GSM CW Performances (In Freescale GSM Test Fixture Optimized for 921 - 960 MHz, 50 οhm system) VDD = 26 Vdc, IDQ = 400 mA, Pout = 60 W, f = 921 - 960 MHz Power Gain Gps — 16.4 — dB Drain Efficiency ηD — 62 — % Input Return Loss IRL — - 12 — dB P1dB — 68 — W Pout @ 1 dB Compression Point (f = 940 MHz) Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture Optimized for 921 - 960 MHz, 50 οhm system) VDD = 26 Vdc, IDQ = 400 mA, Pout = 25 W Avg., f = 921 - 960 MHz, GSM EDGE Signal Power Gain Gps — 17 — dB Drain Efficiency ηD — 44 — % Error Vector Magnitude EVM — 1.5 — % Spectral Regrowth at 400 kHz Offset SR1 — - 62 — dBc Spectral Regrowth at 600 kHz Offset SR2 — - 78 — dBc (continued) MRF5S9070NR1 2 RF Device Data Freescale Semiconductor Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Typical GSM CW Performances (In Freescale GSM Test Fixture Optimized for 865 - 895 MHz, 50 οhm system) VDD = 26 Vdc, IDQ = 400 mA, Pout = 60 W, f = 865 - 895 MHz Power Gain Gps — 16.4 — dB Drain Efficiency ηD — 59 — % Input Return Loss IRL — - 15 — dB P1dB — 71 — W Pout @ 1 dB Compression Point (f = 880 MHz) Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture Optimized for 865 - 895 MHz, 50 οhm system) VDD = 26 Vdc, IDQ = 400 mA, Pout = 25 W Avg., f = 865 - 895 MHz, GSM EDGE Signal Power Gain Gps — 17 — dB Drain Efficiency ηD — 41 — % Error Vector Magnitude EVM — 1.35 — % Spectral Regrowth at 400 kHz Offset SR1 — - 66 — dBc Spectral Regrowth at 600 kHz Offset SR2 — - 81 — dBc MRF5S9070NR1 RF Device Data Freescale Semiconductor 3 VSUPPLY B2 C18 + C20 C19 + C21 R4 L2 VBIAS B1 R1 + C7 + C11 C8 C9 C22 C10 + R2 L1 R3 C12 C5 RF INPUT Z1 Z2 C1 Z3 Z4 C2 Z5 Z6 Z10 Z7 Z8 Z9 C3 C4 C6 Z11 Z12 C13 C14 Z13 Z14 C15 Z15 Z16 RF OUTPUT C16 C17 DUT Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 0.140″ x 0.060″ Microstrip 0.141″ x 0.060″ Microstrip 0.280″ x 0.060″ Microstrip 0.500″ x 0.100″ Microstrip 0.530″ x 0.270″ Microstrip 0.155″ x 0.270″ x 0.530″ Taper 0.376″ x 0.530″ Microstrip 0.116″ x 0.530″ Microstrip 0.055″ x 0.530″ Microstrip Z10 Z11 Z12 Z13 Z14 Z15 Z16 PCB 0.245″ x 0.270″ Microstrip 0.110″ x 0.270″ Microstrip 0.055″ x 0.270″ Microstrip 0.512″ x 0.060″ Microstrip 0.106″ x 0.060″ Microstrip 0.930″ x 0.060″ Microstrip 0.365″ x 0.060″ Microstrip Taconic RF - 35, 0.030″, εr = 3.5 Figure 1. MRF5S9070NR1 Test Circuit Schematic Table 6. MRF5S9070NR1 Test Circuit Component Designations and Values Part Description Part Number Manufacturer B1 Small Ferrite Bead, Surface Mount 2743019447 Fair - Rite B2 Large Ferrite Bead, Surface Mount 2743021447 Fair - Rite C1 0.6 - 6.0 pF Variable Capacitor, Gigatrim 272715L Johanson C2 16 pF Chip Capacitor 100B160JP500X ATC C3 7.5 pF Chip Capacitor 100B7R5JP500X ATC C4, C16 0.8 - 8.0 pF Variable Capacitor, Gigatrim 272915L Johanson C5, C6 15 pF Chip Capacitors 100B150JP500X ATC C7, C8, C20 10 μF, 35 V Tantalum Capacitors T491D106K035AS Kemet C9, C19, C22 0.58 μF Chip Capacitors 700A561MP150X ATC C10, C18 18 pF Chip Capacitors 100B180JP500X ATC C11 100 μF, 50 V Electrolytic Capacitor 515D107M050BB6A Vishay - Dale C12, C14 13 pF Chip Capacitors 100B130JP500X ATC C13 0.7 pF Chip Capacitor 100B0R7BP500X ATC C15 3.9 pF Chip Capacitor 100B3R9JP500X ATC C17 22 pF Chip Capacitor 100B180JP500X ATC C21 470 μF, 63 V Electrolytic Capacitor SME63VB471M12X25LL United Chemi - Con L1, L2 12.5 nH Surface Mount Inductors A04T - 5 Coilcraft R1 1 kW Chip Resistor R2 560 kW Chip Resistor R3 12 W Chip Resistor R4 27 W Chip Resistor MRF5S9070NR1 4 RF Device Data Freescale Semiconductor C7 R1 VGG C11 R2 R3 B2 C9 VDD C20 R4 C22 C10 C18 C6 C2 C21 C19 C8 B1 L2 L1 C12 C17 C15 C3 C1 C5 C16 C4 CUT OUT AREA C13 C14 MRF5S9070N Rev 0 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. MRF5S9070NR1 Test Circuit Component Layout MRF5S9070NR1 RF Device Data Freescale Semiconductor 5 19 18 17 16 Gps ηD VDD = 26 Vdc, Pout = 14 W (Avg.), IDQ = 600 mA Single−Carrier N−CDMA, IS−95 (Pilot, Sync, Paging, Traffic Codes 8 through 13) 15 14 13 12 ACPR 11 10 ALT IRL 40 35 30 25 −40 −45 −50 −55 −60 9 8 860 865 870 875 880 885 890 −65 −70 900 895 −12 −15 −18 −21 −24 −27 −30 IRL, INPUT RETURN LOSS (dB) 45 ACPR (dBc), ALT (dBc) G ps , POWER GAIN (dB) 20 ηD, DRAIN EFFICIENCY (%) TYPICAL CHARACTERISTICS f, FREQUENCY (MHz) Figure 3. Class AB Broadband Performance IDQ = 900 mA 750 mA 600 mA 18 450 mA 17 VDD = 26 Vdc f1 = 880 MHz, f2 = 880.1 MHz Two−Tone Measurements 100 kHz Tone Spacing 300 mA 16 15 −30 VDD = 26 Vdc f1 = 880 MHz, f2 = 880.1 MHz Two−Tone Measurements 100 kHz Tone Spacing −35 −40 IDQ = 900 mA 300 mA 750 mA −45 600 mA −50 −55 450 mA −60 1 10 100 10 1 100 Pout, OUTPUT POWER (WATTS) PEP Figure 4. Two - Tone Power Gain versus Output Power Figure 5. Third Order Intermodulation Distortion versus Output Power 60 Gps 18 40 16 20 ηD 14 0 VDD = 26 Vdc, IDQ = 600 mA f1 = 880 MHz, f2 = 880.1 MHz Two−Tone Measurements, 100 kHz Tone Spacing 12 10 −20 −40 IMD 8 −60 1 10 100 ηD, DRAIN EFFICIENCY (%) IMD, INTERMODULATION DISTORTION (dBc) Pout, OUTPUT POWER (WATTS) PEP 20 G ps , POWER GAIN (dB) −25 IMD, INTERMODULATION DISTORTION (dBc) G ps , POWER GAIN (dB) 19 −20 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) 20 −10 −20 −30 −40 −50 −60 −70 VDD = 26 Vdc, IDQ = 600 mA f1 = 880 MHz, f2 = 880.1 MHz Two−Tone Measurements (f1 + f2)/2 = Center Frequency of 880 MHz 100 kHz Tone Spacing 3rd Order 5th Order 7th Order −80 −90 1 10 100 Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) PEP Figure 6. Power Gain, Drain Efficiency and IMD versus Output Power Figure 7. Intermodulation Distortion Products versus Output Power MRF5S9070NR1 6 RF Device Data Freescale Semiconductor 55 20 54 Gps 18 53 G ps , POWER GAIN (dB) P3dB = 49.78 dBm (94.97 W) 52 51 P1dB = 49.11 dBm (81.54 W) 50 49 Actual 48 46 20 ηD 14 0 VDD = 26 Vdc, IDQ = 600 mA, f = 880 MHz −20 Single−Carrier N−CDMA, IS−95 (Pilot, Sync, Paging, Traffic Codes 8 through 13) −40 12 10 ACPR VDD = 26 Vdc, IDQ = 600 mA Pulsed CW, 8 μsec (on), 1 msec (off) f = 880 MHz 47 16 40 8 −60 ALT 45 6 27 28 29 30 31 32 33 34 35 36 37 −80 1 10 Pin, INPUT POWER (dBm) Pout, OUTPUT POWER (WATTS) AVG. Figure 8. Pulse CW Output Power versus Input Power Figure 9. N - CDMA ACPR, Power Gain and Drain Efficiency versus Output Power 20 70 Gps 18 60 16 50 14 40 12 30 10 VDD = 26 Vdc IDQ = 600 mA f = 880 MHz ηD ηD, DRAIN EFFICIENCY (%) Pout , OUTPUT POWER (dBm) 60 Ideal ACPR, ADJACENT CHANNEL POWER RATIO (dBc) ηD, DRAIN EFFICIENCY (%) TYPICAL CHARACTERISTICS 20 8 10 1 10 100 Pout, OUTPUT POWER (WATTS) CW Figure 10. Power Gain and Drain Efficiency versus CW Output Power MTTF FACTOR (HOURS X AMPS2) 109 108 107 106 90 100 110 120 130 140 150 160 170 180 190 200 210 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than ±10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application. Figure 11. MTTF Factor versus Junction Temperature MRF5S9070NR1 RF Device Data Freescale Semiconductor 7 N - CDMA TEST SIGNAL 100 −10 −20 −30 1 −40 −50 0.1 (dB) PROBABILITY (%) 10 IS−95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 1.2288 MHz Channel Bandwidth Carriers. ACPR Measured in 30 kHz Bandwidth @ ±750 kHz Offset. ALT1 Measured in 30 kHz Bandwidth @ ±1.98 MHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. 0.01 0.001 −60 −70 −80 −90 0.0001 0 2 4 6 8 10 1.2288 MHz Channel BW .. .................................................. . . . . ............ .. .. .. .. .. .. . .. ... . .. . −ALT1 in 30 kHz +ALT1 in 30 kHz . .. . Integrated BW Integrated BW .................. ......... .......... ..... .......... . . ................ ...... ... .. . . . . . . . .............. ................. ......... ........... ... ...... ...... ......... .......... . . . . . . . . . ......... ...... . . . ....... −ACPR in 30 kHz +ACPR in 30 kHz .................. . . . . .. .... . . ............ ....... ............... . ........ . ................ ... . . . . . Integrated BW Integrated BW ........ ...... ........... ...... ... .......... ........... −100 PEAK−TO−AVERAGE (dB) Figure 12. Single - Carrier CCDF N - CDMA −110 −3.6 −2.9 −2.2 −1.5 −0.7 0 0.7 1.5 2.2 2.9 3.6 f, FREQUENCY (MHz) Figure 13. Single - Carrier N - CDMA Spectrum MRF5S9070NR1 8 RF Device Data Freescale Semiconductor Zo = 2 Ω f = 895 MHz f = 895 MHz Zsource f = 865 MHz Zload f = 865 MHz VDD = 26 Vdc, IDQ = 600 mA, Pout = 14 W Avg. f MHz Zsource Ω Zload Ω 865 0.7 + j0.4 2.1 + j0.6 875 0.7 + j0.5 2.0 + j0.7 885 0.6 + j0.5 1.8 + j0.8 895 0.5 + j0.5 1.8 + j0.9 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 14. Series Equivalent Source and Load Impedance MRF5S9070NR1 RF Device Data Freescale Semiconductor 9 NOTES MRF5S9070NR1 10 RF Device Data Freescale Semiconductor NOTES MRF5S9070NR1 RF Device Data Freescale Semiconductor 11 NOTES MRF5S9070NR1 12 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MRF5S9070NR1 RF Device Data Freescale Semiconductor 13 MRF5S9070NR1 14 RF Device Data Freescale Semiconductor MRF5S9070NR1 RF Device Data Freescale Semiconductor 15 How to Reach Us: Home Page: www.freescale.com E - mail: [email protected] USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006. All rights reserved. RoHS-compliant and/or Pb-free versions of Freescale products have the functionality and electrical characteristics of their non-RoHS-compliant and/or non-Pb-free counterparts. For further information, see http://www.freescale.com or contact your Freescale sales representative. For information on Freescale’s Environmental Products program, go to http://www.freescale.com/epp. MRF5S9070NR1 Document Number: MRF5S9070NR1 Rev. 6, 5/2006 16 RF Device Data Freescale Semiconductor