FREESCALE MRFE6P9220HR3

Freescale Semiconductor
Technical Data
Document Number: MRFE6P9220H
Rev. 0, 1/2009
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
MRFE6P9220HR3
Designed for broadband commercial and industrial applications with
frequencies up to 1000 MHz. The high gain and broadband performance of
this device makes it ideal for large - signal, common - source amplifier
applications in 28 Volt base station equipment.
• Typical Single - Carrier N - CDMA Performance @ 880 MHz: VDD = 28 Volts,
IDQ = 1600 mA, Pout = 47 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging,
Traffic Codes 8 Through 13). Channel Bandwidth = 1.2288 MHz. PAR =
9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 20 dB
Drain Efficiency — 30%
ACPR @ 750 kHz Offset — - 46 dBc in 30 kHz Bandwidth
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 880 MHz, 350 Watts CW Output
Power (2 dB Input Overdrive from Rated Pout), Designed for Enhanced
Ruggedness
• Typical Pout @ 1 dB Compression Point ] 220 Watts CW
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Device Designed for Push - Pull Operation Only
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
865 - 900 MHz, 47 W AVG., 28 V
SINGLE N - CDMA
LATERAL N - CHANNEL
RF POWER MOSFET
CASE 375G - 04, STYLE 1
NI - 860C3
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain - Source Voltage
VDSS
- 0.5, +66
Vdc
Gate - Source Voltage
VGS
- 0.5, +12
Vdc
Storage Temperature Range
Tstg
- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature (1,2)
TJ
225
°C
Symbol
Value (2,3)
Unit
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 220 W CW
Case Temperature 76°C, 47 W CW
RθJC
0.25
0.28
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2009. All rights reserved.
Freescale Semiconductor
RF Product Device Data
MRFE6P9220HR3
1
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
3B (Minimum)
Machine Model (per EIA/JESD22 - A115)
C (Minimum)
Charge Device Model (per JESD22 - C101)
IV (Minimum)
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current (4)
(VDS = 66 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current (4)
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate - Source Leakage Current (1)
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage (1)
(VDS = 10 Vdc, ID = 240 μAdc)
VGS(th)
1.5
2.2
3
Vdc
Gate Quiescent Voltage (3)
(VDD = 28 Vdc, ID = 1600 mAdc, Measured in Functional Test)
VGS(Q)
2.3
3
3.8
Vdc
Drain - Source On - Voltage (1)
(VGS = 10 Vdc, ID = 2.4 Adc)
VDS(on)
0.1
0.22
0.3
Vdc
Reverse Transfer Capacitance (4)
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
1.22
—
pF
Output Capacitance (4)
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
—
217
—
pF
Input Capacitance
(VDS = 28 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
Ciss
—
1060
—
pF
Off Characteristics
On Characteristics
Dynamic Characteristics (2)
Functional Tests (3) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1600 mA, Pout = 47 W Avg. N - CDMA, f = 880 MHz,
Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±750 kHz Offset.
PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain
Gps
18.5
20
23
dB
Drain Efficiency
ηD
28
30
—
%
ACPR
—
- 46
- 44.5
dBc
IRL
—
- 14
-9
dB
Adjacent Channel Power Ratio
Input Return Loss
1.
2.
3.
4.
Each side of the device measured separately.
Part internally matched both on input and output.
Measurement made with device in push - pull configuration.
Drains are tied together internally as this is a total device value.
(continued)
MRFE6P9220HR3
2
Freescale Semiconductor
RF Product Device Data
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1600 mA, 850 - 910 MHz Bandwidth
Pout @ 1 dB Compression Point, CW
P1dB
—
220
—
—
10
—
W
IMD Symmetry @ 220 W PEP, Pout where IMD Third Order
Intermodulation ` 30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
IMDsym
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBWres
—
35
—
MHz
Gain Flatness in 60 MHz Bandwidth @ Pout = 47 W Avg.
GF
—
1.1
—
dB
Average Deviation from Linear Phase in 60 MHz Bandwidth
@ Pout = 220 W CW
Φ
—
3.1
—
°
Delay
—
4.6
—
ns
Part - to - Part Insertion Phase Variation @ Pout = 220 W CW,
f = 880 MHz, Six Sigma Window
ΔΦ
—
11
—
°
Gain Variation over Temperature
( - 30°C to +85°C)
ΔG
—
0.012
—
dB/°C
ΔP1dB
—
0.005
—
dBm/°C
Average Group Delay @ Pout = 220 W CW, f = 880 MHz
Output Power Variation over Temperature
( - 30°C to +85°C)
MHz
MRFE6P9220HR3
Freescale Semiconductor
RF Product Device Data
3
R1
VBIAS
+
B1
C23
+
R3
C1
C2
C3
Z19
COAX1
Z2
RF
INPUT
Z12
Z8
Z14
Z16
C14
C10
Z3
C6
Z5
RF
Z18 OUTPUT
C11
DUT
C5
R2
C17
C18
COAX3
Z4
C4
Z1
C16
C15
Z10
Z6
VSUPPLY
+
C12
Z9
Z7
Z13
Z15
Z17
C13
B2
COAX2
VBIAS
Z20
Z11
COAX4
+
C9
C7
+
C8
C24
Z1
Z2, Z3
Z4, Z5
Z6, Z7
Z8, Z9
Z10, Z11
0.401″ x 0.081″
0.563″ x 0.101″
0.416″ x 0.727″
1.186″ x 0.058″
0.191″ x 0.507″
1.306″ x 0.150″
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Z12, Z13
Z14, Z15
Z16, Z17
Z18
Z19, Z20
PCB
C19
VSUPPLY
+
C20
C21
C22
0.225″ x 0.507″ Microstrip
0.440″ x 0.435″ Microstrip
0.123″ x 0.215″ Microstrip
0.401″ x 0.081″ Microstrip
0.339″ x 0.165″ Microstrip
Arlon CuClad 250GX - 0300 - 55 - 22, 0.030″, εr = 2.55
Figure 1. MRF6P9220HR3 Test Circuit Schematic
Table 5. MRF6P9220HR3 Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
B1, B2
Ferrite Beads, Short
2743019447
Fair - Rite
C1, C9
1.0 μF, 50 V Tantalum Chip Capacitors
T491C105K050AT
Kemet
C2, C7, C17, C21
0.1 μF Chip Capacitors
CDR33BX104AKWT
Kemet
C3, C8, C16, C20
1000 pF Chip Capacitors
ATC100B102JT50XT
ATC
C4, C5, C13, C14
100 pF Chip Capacitors
ATC100B101JT500XT
ATC
C6, C12
8.2 pF Chip Capacitors
ATC100B8R2BT500XT
ATC
C10
9.1 pF Chip Capacitor
ATC100B9R1BT500XT
ATC
C11
1.8 pF Chip Capacitor
ATC100B1R8BT500XT
ATC
C15, C19
47 μF, 50 V Electrolytic Capacitors
EMVY500ADA470MF80G
Nippon Chemi - Con
C18, C22
470 μF, 63 V Electrolytic Capacitors
EMVY630GTR471MLN0S
Nippon Chemi - Con
C23, C24
22 pF Chip Capacitors
ATC100B220FT500XT
ATC
Coax1, 2, 3, 4
50 Ω, Semi Rigid Coax, 2.40″ Long
UT - 141A - TP
Micro - Coax
R1, R2
10 Ω, 1/4 W Chip Resistors
CRCW120610R0FKEA
Vishay
R3
1.0 kΩ, 1/4 W Chip Resistor
CRCW12061001FKEA
Vishay
MRFE6P9220HR3
4
Freescale Semiconductor
RF Product Device Data
C15
C1
VGG
B1
C2
R1
VDD
C23
C3
R3
C18
C16
COAX3
MRF6P9220, Rev. 1
COAX1
C6
C5
CUT OUT AREA
C4
C14
C11
C10
C12
C13
COAX4
COAX2
C20
VGG
C7
B2
C8
C9
C17
VDD
C24
R2
C21
C19
C22
Figure 2. MRF6P9220HR3 Test Circuit Component Layout
MRFE6P9220HR3
Freescale Semiconductor
RF Product Device Data
5
TYPICAL CHARACTERISTICS
30
Gps, POWER GAIN (dB)
20.1
29
19.8
28
Gps
VDD = 28 Vdc, Pout = 47 W (Avg.)
IDQ = 1600 mA, N−CDMA IS−95
(Pilot, Sync, Paging, Traffic Codes
8 Through 13)
19.5
19.2
18.9
27
−40
−45
ACPR
18.6
−50
IRL
18.3
−55
ALT1
18
17.7
850
−60
860
870
880
890
−65
910
900
−7
−9
−11
−13
−15
−17
IRL, INPUT RETURN LOSS (dB)
ηD
20.4
ηD, DRAIN
EFFICIENCY (%)
31
ACPR (dBc), ALT1 (dBc)
20.7
f, FREQUENCY (MHz)
Figure 3. Single - Carrier N - CDMA Broadband Performance
@ Pout = 47 Watts Avg.
IDQ = 2400 mA
21
2000 mA
1600 mA
20
19.5
1200 mA
19
18.5
18 800 mA
17.5
VDD = 28 Vdc
f = 880 MHz
17
16.5
1
10
100
−10
−20
IM3−U
−30
IM5−U
−40
IM5−L
IM7−U
−50
VDD = 28 Vdc, Pout = 220 W (PEP)
IDQ = 1600 mA, Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 880 MHz
−60
IM7−L
−70
0.1
300
IM3−L
1
10
TWO−TONE SPACING (MHz)
Figure 5. Intermodulation Distortion Products
versus Tone Spacing
ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB)
Pout, OUTPUT POWER (WATTS) CW
Figure 4. CW Power Gain versus Output Power
60
−5
VDD = 28 Vdc, IDQ = 1600 mA
f = 880 MHz, N−CDMA IS−95
(Pilot, Sync, Paging, Traffic Codes
8 Through 13)
50
−30_C
−15
25_C
85_C
40
−25
85_C
30
Gps
−30_C −35
ηD
TC = −30_C
−45
20
25_C
85_C
ACPR
10
−55
0
1
10
100
−65
300
100
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
20.5
Gps, POWER GAIN (dB)
IMD, INTERMODULATION DISTORTION (dBc)
21.5
Pout, OUTPUT POWER (WATTS) CW
Figure 6. Single - Carrier N - CDMA ACPR, Power Gain
and Drain Efficiency versus Output Power
MRFE6P9220HR3
6
Freescale Semiconductor
RF Product Device Data
TYPICAL CHARACTERISTICS
75
−30_C
Gps, POWER GAIN (dB)
22
Gps
20
18
25_C
85_C
TC = −30_C
45
85_C
25_C
30
ηD
VDD = 28 Vdc
IDQ = 1600 mA
f = 880 MHz
16
15
14
1
60
10
ηD, DRAIN EFFICIENCY (%)
24
0
500
100
Pout, OUTPUT POWER (WATTS) CW
Figure 7. Power Gain and Drain Efficiency
versus CW Output Power
20.5
IDQ = 1600 mA
f = 880 MHz
Gps, POWER GAIN (dB)
19.5
18.5
17.5
28 V
16.5
32 V
VDD = 24 V
15.5
14.5
0
50
100
150
200
250
300
350
400
Pout, OUTPUT POWER (WATTS) CW
Figure 8. Power Gain versus Output Power
MTTF (HOURS)
108
107
106
105
90
110
130
150
170
190
210
230
250
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours when the device
is operated at VDD = 28 Vdc, Pout = 47 W Avg., and ηD = 30%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 9. MTTF Factor versus Junction Temperature
MRFE6P9220HR3
Freescale Semiconductor
RF Product Device Data
7
N - CDMA TEST SIGNAL
100
−10
−20
−30
1
−40
−50
0.1
(dB)
PROBABILITY (%)
10
IS−95 CDMA (Pilot, Sync, Paging, Traffic Codes 8
Through 13) 1.2288 MHz Channel Bandwidth
Carriers. ACPR Measured in 30 kHz Bandwidth @
±750 kHz Offset. ALT1 Measured in 30 kHz
Bandwidth @ ±1.98 MHz Offset. PAR = 9.8 dB @
0.01% Probability on CCDF.
0.01
0.001
−60
−70
−80
−90
0.0001
0
2
4
6
8
10
1.2288 MHz
Channel BW
.. ..................................................
. . . .
............
..
..
..
..
..
..
.
..
...
.
..
.
−ALT1 in 30 kHz
+ALT1 in 30 kHz
.
..
.
Integrated BW
Integrated BW
..................
.........
..........
.....
..........
.
. ................
...... ... ..
.
.
.
.
.
.
.
..............
.................
.........
...........
...
......
......
.........
..........
.
.
.
.
.
.
.
.
.
.........
......
.
.
.
....... −ACPR in 30 kHz +ACPR in 30 kHz ..................
.
.
.
.
..
....
.
.
............
.......
...............
.
........
.
................
...
.
.
.
.
.
Integrated BW
Integrated BW
........
......
...........
......
...
..........
...........
−100
PEAK−TO−AVERAGE (dB)
Figure 10. Single - Carrier CCDF N - CDMA
−110
−3.6 −2.9 −2.2
−1.5 −0.7
0
0.7
1.5
2.2
2.9
3.6
f, FREQUENCY (MHz)
Figure 11. Single - Carrier N - CDMA Spectrum
MRFE6P9220HR3
8
Freescale Semiconductor
RF Product Device Data
f = 850 MHz
f = 910 MHz
Zload
Zo = 10 Ω
f = 850 MHz
f = 910 MHz
Zsource
VDD = 28 Vdc, IDQ = 1600 mA, Pout = 47 W Avg.
f
MHz
Zsource
Ω
Zload
Ω
850
3.50 - j7.10
6.04 - j0.49
865
3.59 - j7.07
6.83 - j1.14
880
3.03 - j6.98
7.41 - j1.19
895
2.42 - j6.20
7.60 - j0.98
910
2.26 - j5.39
8.06 - j0.45
Zsource = Test circuit impedance as measured from
gate to gate, balanced configuration.
Zload
= Test circuit impedance as measured
from drain to drain, balanced configuration.
Input
Matching
Network
+
Device
Under
Test
−
−
Z
source
Output
Matching
Network
+
Z
load
Figure 12. Series Equivalent Source and Load Impedance
MRFE6P9220HR3
Freescale Semiconductor
RF Product Device Data
9
PACKAGE DIMENSIONS
4
G
ccc
R
T A
M
B
M
Q
bbb
2X
L
M
J
T A
M
M
B
M
(LID)
2
1
B
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M−1994.
3. DIMENSION H TO BE MEASURED 0.030 (0.762)
AWAY FROM PACKAGE BODY.
4. RECOMMENDED BOLT CENTER DIMENSION
OF 1.140 (28.96) BASED ON 3M SCREW.
(FLANGE)
5
4X
S
(INSULATOR)
bbb
M
T A
K
3
4X
M
B
M
4
B
D
bbb
M
ccc
T A
M
M
B
T A
M
M
B
M
F
N
(LID)
E
M
H
bbb
A
C
(INSULATOR)
M
T A
M
B
M
A
T
SEATING
PLANE
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
Q
R
S
bbb
ccc
INCHES
MIN
MAX
1.335
1.345
0.380
0.390
0.180
0.224
0.325
0.335
0.060
0.070
0.004
0.006
1.100 BSC
0.097
0.107
0.2125 BSC
0.135
0.165
0.425 BSC
0.852
0.868
0.851
0.869
0.118
0.138
0.395
0.405
0.394
0.406
0.010 REF
0.015 REF
STYLE 1:
PIN 1.
2.
3.
4.
5.
MILLIMETERS
MIN
MAX
33.91
34.16
9.65
9.91
4.57
5.69
8.26
8.51
1.52
1.78
0.10
0.15
27.94 BSC
2.46
2.72
5.397 BSC
3.43
4.19
10.8 BSC
21.64
22.05
21.62
22.07
3.00
3.30
10.03
10.29
10.01
10.31
0.25 REF
0.38 REF
DRAIN
DRAIN
GATE
GATE
SOURCE
CASE 375G - 04
ISSUE G
NI - 860C3
MRFE6P9220HR3
10
Freescale Semiconductor
RF Product Device Data
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
0
Jan. 2009
Description
• Initial Release of Data Sheet
MRFE6P9220HR3
Freescale Semiconductor
RF Product Device Data
11
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© Freescale Semiconductor, Inc. 2009. All rights reserved.
MRFE6P9220HR3
Document Number: MRFE6P9220H
Rev. 0, 1/2009
12
Freescale Semiconductor
RF Product Device Data