KSC5321F KSC5321F High Voltage and High Reliability • High speed Switching • Wide Safe Operating Area TO-220F 1 1.Base 2.Collector 3.Emitter NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage Value 800 Units V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage 500 V 7 IC Collector Current (DC) 5 V A ICP *Collector Current (Pulse) 10 A IB Base Current (DC) 2 A IBP *Base Current (Pulse) 4 A PC Power Dissipation(Tc=25) 40 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C * Pulse Test: Pulse Width=5ms, Duty Cycle≤10% Thermal Characteristics TC=25°C unless otherwise noted Symbol Rθjc Thermal Resistance Rθja ©2002 Fairchild Semiconductor Corporation Characteristics Junction to Case Junction to Ambient Rating 3.1 Unit °C/W 62.5 Rev. B, December 2002 Symbol BVCBO Parameter Collector-Base Breakdown Voltage Test Condition IC = 1mA, IE = 0 Min. 800 Typ. - Max. - Units V BVCEO Collector-Emitter Breakdown Voltage IC = 5mA, IB = 0 500 - - V BVEBO Emitter-Base Breakdown Voltage IC =1mA, IC = 0 7 - - V ICBO Collector Cut-off Current VCB = 800V, IE = 0 - - 10 µA IEBO Emitter Cut-off Current VEB = 7V, IC = 0 - - 10 µA hFE1 hFE2 DC Current Gain VCE = 5V, IC = 0.6A VCE = 5V, IC = 3A 15 8 - 40 - VCE(sat) Collector-Emitter Saturation Voltage IC = 3A, IB = 0.6A - - 1.0 VBE(sat) Base-Emitter Saturation Voltage IC = 3A, IB = 0.6A - - 1.5 V V fT Current Gain Bandwidth Product VCE= 10V, IC = 0.6A 14 - MHz Cob Output Capacitance VCB = 10V, IE = 0, f = 1MHz - 65 100 pF Cib Input Capacitance VEB = 7V, IC = 0, f = 1MHz - 1400 2000 pF tON Turn On Time - 0.5 µs Storage Time - 6.5 µs tF Fall Time VCC = 250V, IC = 1A IB1 = -IB2 = 0.2A RL = 250Ω - tSTG - - 0.3 µs tON Turn On Time - - 0.5 µs tSTG Storage Time - - 3.0 µs tF Fall Time - - 0.3 µs ©2002 Fairchild Semiconductor Corporation VCC = 250V, IC = 4A IB1 = 0.8A, IB2 = -1.6A RL = 125Ω Rev. B, December 2002 KSC5321F Electrical Characteristics TC=25°C unless otherwise noted KSC5321F Typical Characteristics 100 mA 700 I B= 00mA IB = 6 0mA I B = 50 0mA I B = 40 0mA I B = 30 4 3 VCE = 5V hFE, DC CURRENT GAIN IC[A], COLLECTOR CURRENT 5 A I B = 200m A I B = 100m 2 1 0 0 2 4 6 8 10 1 0.01 10 Figure 1. Static Characteristic 10 Figure 2. DC current Gain 1000 10 IC = 5 IB 1 f = 1MHz IE = 0 Cob[pF], CAPACITANCE VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 1 IC[A], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE VBE(sat) 0.1 VCE(sat) 0.01 0.01 100 10 1 0.1 1 10 1 10 100 1000 VCB[V], COLLECTOR-BASE VOLTAGE IC[A], COLLECTOR CURRENT Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Collector Output Capacitance 100 tSTG 1 s 1 ms 10 tF 0.1 DC s 1m tON 50µs Pulse 10 0µ 10 IC[A], COLLECTOR CURRENT 10 tON, tSTG, tF [µs], TIME 0.1 0.1 0.01 0.01 0.1 1 IC[A], COLLECTOR CURRENT Figure 5. Switching Time ©2002 Fairchild Semiconductor Corporation 10 1 10 100 1000 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 6. Safe Operating Area Rev. B, December 2002 KSC5321F Typical Characteristics (Continued) 100 80 PC[W], POWER DISSIPATION IC[A], COLLECTOR CURRENT IB2 = -1A L = 200µH 10 1 0.1 0.01 10 60 40 20 0 100 1000 10000 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 7. Reverse Bias Safe Operating Area ©2002 Fairchild Semiconductor Corporation 0 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 8. Power Derating Rev. B, December 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ Bottomless™ FAST® FASTr™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2002 Fairchild Semiconductor Corporation Rev. I1