FAIRCHILD KSC5321F

KSC5321F
KSC5321F
High Voltage and High Reliability
• High speed Switching
• Wide Safe Operating Area
TO-220F
1
1.Base
2.Collector
3.Emitter
NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
VCBO
Parameter
Collector-Base Voltage
Value
800
Units
V
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
500
V
7
IC
Collector Current (DC)
5
V
A
ICP
*Collector Current (Pulse)
10
A
IB
Base Current (DC)
2
A
IBP
*Base Current (Pulse)
4
A
PC
Power Dissipation(Tc=25)
40
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
- 55 ~ 150
°C
* Pulse Test: Pulse Width=5ms, Duty Cycle≤10%
Thermal Characteristics TC=25°C unless otherwise noted
Symbol
Rθjc
Thermal Resistance
Rθja
©2002 Fairchild Semiconductor Corporation
Characteristics
Junction to Case
Junction to Ambient
Rating
3.1
Unit
°C/W
62.5
Rev. B, December 2002
Symbol
BVCBO
Parameter
Collector-Base Breakdown Voltage
Test Condition
IC = 1mA, IE = 0
Min.
800
Typ.
-
Max.
-
Units
V
BVCEO
Collector-Emitter Breakdown Voltage
IC = 5mA, IB = 0
500
-
-
V
BVEBO
Emitter-Base Breakdown Voltage
IC =1mA, IC = 0
7
-
-
V
ICBO
Collector Cut-off Current
VCB = 800V, IE = 0
-
-
10
µA
IEBO
Emitter Cut-off Current
VEB = 7V, IC = 0
-
-
10
µA
hFE1
hFE2
DC Current Gain
VCE = 5V, IC = 0.6A
VCE = 5V, IC = 3A
15
8
-
40
-
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 3A, IB = 0.6A
-
-
1.0
VBE(sat)
Base-Emitter Saturation Voltage
IC = 3A, IB = 0.6A
-
-
1.5
V
V
fT
Current Gain Bandwidth Product
VCE= 10V, IC = 0.6A
14
-
MHz
Cob
Output Capacitance
VCB = 10V, IE = 0, f = 1MHz
-
65
100
pF
Cib
Input Capacitance
VEB = 7V, IC = 0, f = 1MHz
-
1400
2000
pF
tON
Turn On Time
-
0.5
µs
Storage Time
-
6.5
µs
tF
Fall Time
VCC = 250V, IC = 1A
IB1 = -IB2 = 0.2A
RL = 250Ω
-
tSTG
-
-
0.3
µs
tON
Turn On Time
-
-
0.5
µs
tSTG
Storage Time
-
-
3.0
µs
tF
Fall Time
-
-
0.3
µs
©2002 Fairchild Semiconductor Corporation
VCC = 250V, IC = 4A
IB1 = 0.8A, IB2 = -1.6A
RL = 125Ω
Rev. B, December 2002
KSC5321F
Electrical Characteristics TC=25°C unless otherwise noted
KSC5321F
Typical Characteristics
100
mA
700
I B=
00mA
IB = 6
0mA
I B = 50
0mA
I B = 40
0mA
I B = 30
4
3
VCE = 5V
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
5
A
I B = 200m
A
I B = 100m
2
1
0
0
2
4
6
8
10
1
0.01
10
Figure 1. Static Characteristic
10
Figure 2. DC current Gain
1000
10
IC = 5 IB
1
f = 1MHz
IE = 0
Cob[pF], CAPACITANCE
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
1
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
VBE(sat)
0.1
VCE(sat)
0.01
0.01
100
10
1
0.1
1
10
1
10
100
1000
VCB[V], COLLECTOR-BASE VOLTAGE
IC[A], COLLECTOR CURRENT
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Collector Output Capacitance
100
tSTG
1
s
1
ms
10
tF
0.1
DC
s
1m
tON
50µs
Pulse
10
0µ
10
IC[A], COLLECTOR CURRENT
10
tON, tSTG, tF [µs], TIME
0.1
0.1
0.01
0.01
0.1
1
IC[A], COLLECTOR CURRENT
Figure 5. Switching Time
©2002 Fairchild Semiconductor Corporation
10
1
10
100
1000
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 6. Safe Operating Area
Rev. B, December 2002
KSC5321F
Typical Characteristics (Continued)
100
80
PC[W], POWER DISSIPATION
IC[A], COLLECTOR CURRENT
IB2 = -1A
L = 200µH
10
1
0.1
0.01
10
60
40
20
0
100
1000
10000
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 7. Reverse Bias Safe Operating Area
©2002 Fairchild Semiconductor Corporation
0
25
50
75
100
125
150
175
o
TC[ C], CASE TEMPERATURE
Figure 8. Power Derating
Rev. B, December 2002
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DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
INTERNATIONAL.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2002 Fairchild Semiconductor Corporation
Rev. I1