FJP5355 FJP5355 High Voltage Switch Mode Application • • • • High Speed Switching Very Low Switching Losses Very Low Operating Temperature Wide RBSOA TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value 900 Units V VCEO Collector-Emitter Voltage 440 V VEBO Emitter- Base Voltage 14.5 V IC Collector Current (DC) 5 A ICP Collector Current (Pulse) 7.5 A IB Base Current 2.5 A PC Collector Dissipation (TC=25°C) 50 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 65 ~ 150 °C Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCBO Parameter Collector- Base Breakdown Voltage Test Condition IC = 500µA, IE = 0 Min. 900 BVCEO Collector- Emitter Breakdown Voltage IC = 5mA, IB = 0 440 BVEBO Emitter-Base Breakdown Voltage IE = 500µA, IC = 0 14.5 IEBO Emitter Cut-off Current VEB = 12V, IC = 0 hFE *DC Current Gain VCE = 2V, IC = 10mA VCE = 2V, IC = 0.8A VCE = 2V, IC = 2.5A VCE(sat) *Collector-Emitter Saturation Voltage VBE (sat) Typ. Max. Units V V V 1 µA IC = 0.8A, IB = 0.2A IC = 2.5A, IB = 0.8A 0.2 0.4 V V *Base-Emitter Saturation Voltage IC = 0.8A, IB = 0.2A IC = 2.5A, IB = 0.8A 1.0 1.2 V V fT Current Gain Bandwidth Product VCE = 10V, IC = 0.2A tON Turn On Time tSTG Storage Time tF Fall Time VCC = 125V, IC = 0.5A IB1 = 45mA, -IB2 = 0.5A PW=300µs 15 15 7 4 MHz 1.1 µs 1.2 µs 0.4 µs * Pulse test: PW≤300µs, Duty cycle≤2% ©2003 Fairchild Semiconductor Corporation Rev. A, September 2003 FJP5355 Typical Characteristics 5 1000 IB=600mA hFE, DC CURREMT GAIN IC [A], COLLECTOR CURRENT VCE = 5V 4 3 IB =300mA IB=200mA 2 IB =100mA 1 0 0 1 2 3 4 o T C = 75 C 100 o TC = 125 C o 10 1 1m 5 10m VCE [V], COLLECTOR-EMITTER VOLTAGE 1 10 Figure 2. DC Current Gain 10 10 IC = 4 IB VBE(sat) [V], SATURATION VOLTAGE VCE(sat) [V], SATURATION VOLTAGE 100m IC [A], COLLECTOR CURRENT Figure 1. Static Characteristic 1 o T C = 75 C o T C = 125 C o T C = 25 C 0.1 o TC = - 40 C 0.01 1m 10m 100m 1 IC = 4 IB 1 o TC = 75 C o T C = 125 C 0.1 1m 10 o TC = 25 C o T C = - 40 C 10m IC [A], COLLECTOR CURRENT 100m 1 10 IC [A], COLLECTOR CURRENT Figure 3. Saturation Voltage Figure 4. Saturation Voltage 60 PC[W], COLLECTOR POWER DISSIPATION 1000 tSTG & tF [ns], Switching Time T C = 25 C o TC = - 40 C tSTG 100 tF I B1=45mA, I B2=-500mA V CC=125V,PW=300us 10 0.3 1 4 50 40 30 20 10 0 0 25 50 75 100 125 150 175 IC [A], COLLECTOR CURRENT o TC[ C], CASE TEMPERATURE Figure 5. Resistive Load Switching ©2003 Fairchild Semiconductor Corporation Figure 6. Power Derating Curve Rev. A, September 2003 FJP5355 Typical Characteristics (Continued) 100 5 IC[A], COLLECTOR CURRENT IC [A], COLLECTOR CURRENT 6 4 3 2 IB1=1A, R B2=0 L=1mH, V CC=50V 1 10 100 1000 VCE [V], COLLECTOR-EMITTER VOLTAGE Figure 7. Reverse Biased Safe Operating Area ©2003 Fairchild Semiconductor Corporation ICP (max) 10 IC(max) 10ms 1ms DC 500µ s 1 0.1 0.01 1 10 100 1000 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 8. Forward Biased Safe Operating Area Rev. A, September 2003 FJP5355 Package Dimensions TO-220 4.50 ±0.20 2.80 ±0.10 (3.00) +0.10 1.30 –0.05 18.95MAX. (3.70) ø3.60 ±0.10 15.90 ±0.20 1.30 ±0.10 (8.70) (1.46) 9.20 ±0.20 (1.70) 9.90 ±0.20 1.52 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] 10.08 ±0.30 (1.00) 13.08 ±0.20 ) (45° 1.27 ±0.10 +0.10 0.50 –0.05 2.40 ±0.20 2.54TYP [2.54 ±0.20] 10.00 ±0.20 Dimensions in Millimeters ©2003 Fairchild Semiconductor Corporation Rev. A, September 2003 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ActiveArray™ FAST® FASTr™ Bottomless™ FRFET™ CoolFET™ CROSSVOLT™ GlobalOptoisolator™ GTO™ DOME™ HiSeC™ EcoSPARK™ I2C™ E2CMOS™ EnSigna™ ImpliedDisconnect™ FACT™ ISOPLANAR™ Across the board. Around the world.™ The Power Franchise™ Programmable Active Droop™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench® QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic® TINYOPTO™ TruTranslation™ UHC™ UltraFET® VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2003 Fairchild Semiconductor Corporation Rev. I5