FAIRCHILD FJP5027R

FJP5027
FJP5027
High Voltage and High Reliability
• High Speed Switching
• Wide SOA
TO-220
1
1.Base
2.Collector
3.Emitter
NPN Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
VCBO
Parameter
Collector-Base Voltage
Value
1100
Units
V
800
V
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current (DC)
3
A
A
ICP
Collector Current (Pulse)
10
IB
Base Current
1.5
A
PC
Collector Dissipation ( TC=25°C)
50
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
- 55 ~ 150
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
BVCBO
Parameter
Collector-Base Breakdown Voltage
Test Condition
IC = 1mA, IE = 0
BVCEO
Collector-Emitter Breakdown Voltage
IC = 5mA, IB = 0
800
BVEBO
Emitter-Base Breakdown Voltage
IE = 1mA, IC = 0
7
V
VCEX(sus)
Collector-Emitter Sustaining Voltage
IC = 1.5A, IB1 = -IB2 = 0.3A
L = 2mH, Clamped
800
V
ICBO
Collector Cut-off Current
VCB = 800V, IE = 0
10
µA
IEBO
Emitter Cut-off Current
VEB = 5V, IC = 0
10
µA
hFE1
hFE2
DC Current Gain
VCE = 5V, IC = 0.2A
VCE = 5V, IC = 1A
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 1.5A, IB = 0.3A
2
V
VBE(sat)
Base-Emitter Saturation Voltage
IC = 1.5A, IB = 0.3A
1.5
V
Cob
Output Capacitance
VCB = 10V, IE = 0, f = 1MHz
60
pF
fT
Current Gain Bandwidth Product
VCE = 10V, IC = 0.2A
15
MHz
VCC = 400V
IC = 5IB1 = -2.5IB2 = 2A
RL = 200Ω
tON
Turn On Time
tSTG
Storage Time
tF
Fall Time
Min.
1100
Typ.
Max.
Units
V
V
10
8
40
0.5
µs
3
µs
0.3
µs
hFE Classification
Classification
N
R
O
hFE1
10 ~ 20
15 ~ 30
20 ~ 40
©2003 Fairchild Semiconductor Corporation
Rev. A, December 2003
FJP5027
Typical Characteristics
3.0
100
VCE = 5 V
IB = 350mA
2.5
IC [A], COLLECTOR CURRENT
o
o
hFE, DC CURRENT GAIN
TC = 125 C
2.0
IB = 150mA
1.5
IB = 100mA
1.0
IB = 50mA
TC = 75 C
o
TC = - 25 C
o
TC = 25 C
10
0.5
0.0
0
1
2
3
4
5
6
7
1
0.01
8
0.1
Figure 1. Static Characteristic
10
Figure 2. DC current Gain
100
10
IC = 5 IB
VBE(sat) [V], SATURATION VOLTAGE
VCE(sat) [V], SATURATION VOLTAGE
1
IC [A], COLLECTOR CURRENT
VCE [V], COLLECTOR-EMITTER VOLTAGE
o
TC = 125 C
10
o
TC = 75 C
o
TC = 25 C
1
o
TC = - 25 C
0.1
0.01
0.1
1
IC = 5 IB
o
TC = 25 C
1
o
TC = - 25 C
o
o
TC = 125 C
TC = 75 C
0.1
0.1
10
IC [A], COLLECTOR CURRENT
1
10
IC [A], COLLECTOR CURRENT
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter On Voltage
IC[A], COLLECTOR CURRENT
IC [A], COLLECTOR CURRENT
100
10
IB1=3A, RB2=0
L=1mH, VCC=20V
1
10
100
1000
ICMAX.(Pulse)
10
ICMAX(Continuous)
10ms
1ms
100µs
DC
1
0.1
0.01
1E-3
1
10
100
1000
10000
VCE [V], COLLECTOR-EMITTER VOLTAGE
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Switching Time
©2003 Fairchild Semiconductor Corporation
Figure 6. Safe Operating Area
Rev. A, December 2003
FJP5027
Typical Characteristics (Continued)
80
10
PC[W], POWER DISSIPATION
tF, tSTG [µ s], SWITCHING TIME
70
1
0.1
IB1=45mA, IB2=-0.5A
VCC=125V
60
50
40
30
20
10
0
0.01
0.1
1
10
IC [A], COLLECTOR CURRENT
Figure 7. Resistive Load Switching Characteristics
©2003 Fairchild Semiconductor Corporation
0
25
50
75
100
125
150
175
o
TC[ C], CASE TEMPERATURE
Figure 8. Power Derating
Rev. A, December 2003
FJP5027
Package Dimensions
TO-220
4.50 ±0.20
2.80 ±0.10
(3.00)
+0.10
1.30 –0.05
18.95MAX.
(3.70)
ø3.60 ±0.10
15.90 ±0.20
1.30 ±0.10
(8.70)
(1.46)
9.20 ±0.20
(1.70)
9.90 ±0.20
1.52 ±0.10
0.80 ±0.10
2.54TYP
[2.54 ±0.20]
10.08 ±0.30
(1.00)
13.08 ±0.20
)
(45°
1.27 ±0.10
+0.10
0.50 –0.05
2.40 ±0.20
2.54TYP
[2.54 ±0.20]
10.00 ±0.20
Dimensions in Millimeters
©2003 Fairchild Semiconductor Corporation
Rev. A, December 2003
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intended to be an exhaustive list of all such trademarks.
ACEx™
FACT Quiet Series™
ActiveArray™
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Across the board. Around the world.™
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MSX™
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OPTOLOGIC®
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench®
QFET®
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
SILENT SWITCHER®
SMART START™
SPM™
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SuperSOT™-3
SuperSOT™-6
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PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
2. A critical component is any component of a life support
which, (a) are intended for surgical implant into the body,
device or system whose failure to perform can be
or (b) support or sustain life, or (c) whose failure to perform
reasonably expected to cause the failure of the life support
when properly used in accordance with instructions for use
device or system, or to affect its safety or effectiveness.
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2003 Fairchild Semiconductor Corporation
Rev. I6