Communications componentS 850 nm 2.5 G GaAs PIN Die PL-DD0-00-S30-C0 Key Features •Topside connections for both contacts •Large topside detection area •Anti-reflective coating for 850 nm •Monolithic insulating mounting surface •Data rates from 622 Mbps to 2.5 Gbps •Custom physical configuration and performance specification tolerances are available Benefits •Large active area provides improved alignment tolerances and ease of barrel attachment •Small die dimensions allow flexible assembly options NORTH AMERICA: 800 498-JDSU (5378) The JDSU single die 850 nm 2.5 Gbps GaAs PIN is designed for high-speed optical data communication applications. The topside illuminated device has a large optical detection area, Ø=120 mm, for increased process tolerance during assembly. The backside mounting surface is electrically isolated from the device electrodes for simplified assembly. The PIN is designed for datacom applications using 850 nm multi-mode 50/125 mm or 62.5/125 mm fiber. worldwide: +800 5378-JDSU WEBSITE: www.jdsu.com 850 nm 2.5 G GaAs PIN Die Mounting Dimensions 0.310 0.203 ±0.013 0.155 4X 0.031 0.005 1 +0.010 - 0.000 0.209 0.005 0.089 +0.010 - 0.000 0.089 0.336 0.119 0.089 0.005 0.005 +0.010 - 0.000 +0.010 - 0.000 Note 1Device Anode 2Device Cathode 2 Dimensions are in mm Shipping Information Shipped in anti-static 2” x 2” gel pack containers. 1000 per gel pack. Absolute Maximum Ratings Parameter (Tcase = 30 °C, Continuous Wave (CW) operation unless otherwise stated.) Symbol Storage temperature Tst Forward current If Reverse voltage BVRPD Reverse current IR ESD1 Ratings Unit -40 to +125 5 -40 1 Class 1 °C mA V mA Note: Conditions exceeding those listed may cause permanent damage to the device. Devices subjected to conditions beyond the limits specified for extended periods of time may adversely affect reliability. 1. HBM 850 nm 2.5 G GaAs PIN Die Electro-optical Characteristics Parameter (Tcase = 30 °C, CW operation unless otherwise stated.) Symbol Test Condition Min. Typ. Max. PIN Diode Detection wavelength lp 850 Operating temperature Top -40 85 Detection aperture D 120 Responsivity R VR = 1.6 V 0.55 0.6 l = 850 nm Dark current ID VR = 1.6 V 0.1 1.0 Breakdown voltage VB 40 Capacitance C VR = 2.0 V 0.6 0.75 0.8 f = 1 MHz Rise/Fall time1 tr 20% - 80% 100 tf 20% - 80% 3 Bandwidth BW VR = 2.0 V Unit nm °C mm A/W nA V pF psec GHz 1. Packaging, coupling, electronics and optical measurement hardware affect rise/fall time measurement. Order Information For more information on this or other products and their availability, please contact your local JDSU account manager or JDSU directly at 1-800-498-JDSU (5378) in North America and +800-5378-JDSU worldwide or via e-mail at [email protected]. Sample: PL-DD0-00-S30-C0 Part Number PL-DD0-00-S30-C0 Description 850 nm 2.5 G GaAs PIN die NORTH AMERICA: 800 498-JDSU (5378) worldwide: +800 5378-JDSU WEBSITE: www.jdsu.com Product specifications and descriptions in this document subject to change without notice. © 2008 JDS Uniphase Corporation 30149324 000 0408 PL-DD0-00-S30-C0.DS.CC.AE April 2008