COMMUNICATIONS COMPONENTS 850 nm 4.25 G VCSEL Die PL-VD0-00-SG0-C0 Key Features • Data rates from 622 Mbps to 4.25 Gbps • -20°C to 85°C operation • <2.2 V operation • Backside cathode and topside anode configuration • Custom specification tolerances available Benefits • Very high reliability - Low FIT - High MTBF • Excellent performance over extended operating temperatures NORTH AMERICA: 800 498-JDSU (5378) The JDSU 850 nm 4.25 Gbps VCSEL (Vertical Cavity Surface Emitting Laser) is designed for high-speed optical data communication applications. The patented JDSU VCSEL is engineered for performance and reliability over extended operating temperatures and power supply conditions. Extensive production lot testing and rigorous lot qualification processes ensure specification compliance and high reliability. WORLDWIDE: +800 5378-JDSU WEBSITE: www.jdsu.com 850 NM 4.25 G VCSEL DIE 2 Mounting Dimensions 1 2 Note 1 Device Anode 2 Device Cathode Dimensions are in mm Shipping Information Shipped in anti-static 2” x 2” gel pack containers. 1000 per gel pack. Absolute Maximum Ratings (Tcase = 30°C, Continuous Wave (CW) operation unless otherwise stated.) Parameter Symbol Ratings Unit Storage temperature Laser forward current Laser reverse voltage ESD1 Tst If BVRPD -40 to +125 12 -5 Class 1 °C mA V Note: Conditions exceeding those listed may cause permanent damage to the device. Devices subjected to conditions beyond the limits specified for extended periods of time may adversely affect reliability. 1. HBM 850 NM 4.25 G VCSEL DIE Electro-optical Characteristics (Tcase = 30°C, CW operation unless otherwise stated.) Parameter Symbol Peak emission wavelength Operating temperature RMS spectral width λp temperature coefficient Beam divergence λp Top Δλ Δλp Θ Relative intensity noise Rise/Fall time1 RIN12 tr tf Ith ΔIth Vf Rs η Δη/ΔT Threshold current Ith temperature variation Laser forward voltage Series resistance Slope efficiency2 Slope efficiency temperature variation Test Condition Min. Typ. Max. Unit 840 -30 850 859 85 0.65 nm °C nm nm/°C deg If = 6 mA 0.06 Pout = 1.4 mW Full width 1/e2 If = 8 mA 20% – 80% 20% – 80% T = -30°C to 85°C If = 4 mA If = 6 mA 23 -122 80 80 1.20 ±0.6 2.1 70 0.35 0.50 ±0.4 55 0.25 T = 25°C to 85°C T = -30°C to 25°C -6000 -4000 dB/Hz psec mA mA V Ohms mW/mA PPM/°C 1. Drive electronics and optical measurement hardware affect Rise/Fall Time measurement. Rise/Fall Time is specified using an AC coupled 50 Ω voltage source and DC bias T. Pavg=400 µW, Extinction Ratio=6 dB. 2. Tighter specification ranges are available upon request. Ordering Information For more information on this or other products and their availability, please contact your local JDSU account manager or JDSU directly at 1-800-498-JDSU (5378) in North America and +800-5378-JDSU worldwide, or via e-mail at [email protected]. Sample: PL-VD0-00-SG0-C0 Part Number PL-VD0-00-SG0-C0 Description 850 nm 4.25 G VCSEL Die NORTH AMERICA: 800 498-JDSU (5378) WORLDWIDE: +800 5378-JDSU WEBSITE: www.jdsu.com Product specifications and descriptions in this document subject to change without notice. © 2008 JDS Uniphase Corporation 30149498 500 0808 PL-VD0-00-SG0-C0.DS.CC.AE August 2008