FAIRCHILD KSC5021F

KSC5021F
KSC5021F
High Voltage and High Reliability
• High Speed Switching : tF = 0.1µs(Typ.)
• Wide SOA
TO-220F
1
1.Base
2.Collector
3.Emitter
NPN Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
VCBO
Parameter
Collector-Base Voltage
Value
800
Units
V
500
V
V CEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current (DC)
5
A
10
A
ICP
Collector Current (Pulse)
IB
Base Current
PC
Collector Dissipation (TC=25°C)
TJ
TSTG
2
A
40
W
Junction Temperature
150
°C
Storage Temperature
- 55 ~ 150
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
BVCBO
Parameter
Collector-Base Breakdown Voltage
Test Condition
IC = 1mA, IE = 0
Min.
800
BVCEO
BVEBO
VCEX (sus)
Typ.
Max.
Units
V
Collector-Emitter Sustaining Voltage
IC = 5mA, IB = 0
500
Emitter-Base Breakdown Voltage
IE = 1mA, IC = 0
7
V
Collector-Emitter Sustaining Voltage
IC = 2.5A, IB1 = -IB2 = 1A
L = 1mH, Clamped
500
V
V
ICBO
Collector Cut-off Current
VCB = 500V, IE = 0
10
µA
IEBO
Emitter Cut-off Current
VEB = 5V, IC = 0
10
µA
hFE1
hFE2
DC Current Gain
VCE = 5V, IC = 0.6A
VCE = 5V, IC = 3A
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 3A, IB = 0.6A
1
V
VBE(sat)
Base-Emitter Saturation Voltage
IC = 3A, IB = 0.6A
1.5
V
15
8
50
Cob
Output Capacitance
VCB = 10V, IE = 0, f = 1MHz
80
pF
fT
Current Gain Bandwidth Product
VCE = 10V, IC = 0.6A
15
MHz
tON
Turn On Time
tSTG
Storage Time
tF
Fall Time
VCC = 200V
IC = 5IB1 = -2.5IB2 = 4A
RL = 50Ω
0.5
µs
3
µs
0.3
µs
hFE Classification
Classification
R
O
Y
hFE1
15 ~ 30
20 ~ 40
30 ~ 50
©2002 Fairchild Semiconductor Corporation
Rev. B1, December 2002
KSC5021F
Typical Characteristics
1000
5
4
IB = 600mA
VCE = 5V
IB = 400mA
IB = 1A
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
IB = 800mA
IB = 1.2A
IB = 200mA
3
IB = 100mA
2
IB = 50mA
100
10
1
IB = 20mA
IB = 0
0
0
2
4
6
8
1
0.01
10
0.1
VCE[V], COLLECTOR-EMITTER VOLTAGE
10
IC[A], COLLECTOR CURRENT
Figure 1. Static Characteristic
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
1
Figure 2. DC current Gain
10
10
IC = 5 IB
tON, tSTG, tF [µs], TIME
tSTG
VBE(sat)
1
0.1
1
tF
tON
0.1
VCE(sat)
0.01
0.01
0.1
1
0.01
0.1
10
1
IC[A], COLLECTOR CURRENT
10
IC[A], COLLECTOR CURRENT
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Switching Time
100
6
VCE = 5V
IC[A], COLLECTOR CURRENT
1
0
0.0
s
2
0µ
50
3
IC(max)
s
1m
4
50µs
ICP(max)
10
s
m
10
IC[A], COLLECTOR CURRENT
5
DC
1
0.1
0.01
0.2
0.4
0.6
0.8
1.0
VBE[V], BASE-EMITTER VOLTAGE
Figure 5. Base-Emitter On Voltage
©2002 Fairchild Semiconductor Corporation
1.2
1
10
100
1000
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 6. Safe Operating Area
Rev. B1, December 2002
KSC5021F
Typical Characteristics (Continued)
60
100
50
PC[W], POWER DISSIPATION
IC[A], COLLECTOR CURRENT
IB2 = -1A
L = 200µH
10
1
0.1
40
30
20
10
0
0.01
10
100
1000
10000
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 7. Reverse Bias Safe Operating Area
©2002 Fairchild Semiconductor Corporation
0
25
50
75
100
125
150
175
o
TC[ C], CASE TEMPERATURE
Figure 8. Power Derating
Rev. B1, December 2002
KSC5021F
Package Dimensions
3.30 ±0.10
TO-220F
10.16 ±0.20
2.54 ±0.20
ø3.18 ±0.10
(7.00)
(1.00x45°)
15.87 ±0.20
15.80 ±0.20
6.68 ±0.20
(0.70)
0.80 ±0.10
)
0°
(3
9.75 ±0.30
MAX1.47
#1
+0.10
0.50 –0.05
2.54TYP
[2.54 ±0.20]
2.76 ±0.20
2.54TYP
[2.54 ±0.20]
9.40 ±0.20
4.70 ±0.20
0.35 ±0.10
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation
Rev. B1, December 2002
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RapidConfigure™
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PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
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LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
INTERNATIONAL.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2002 Fairchild Semiconductor Corporation
Rev. I1