MCC SI2301

MCC
TM
Micro Commercial Components
omponents
20736 Marilla Street Chatsworth
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SI2301
Features
•
•
•
•
•
•
•
P-Channel
Enhancement Mode
-20V,-2.8A, RDS(ON)=120mΩ@VGS=-4.5V
RDS(ON)=150mΩ@VGS=-2.5V
High dense cell design for extremely low RDS(ON)
Rugged and reliable
High Speed Switching
SOT-23 Package
Marking Code: S1
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Field Effect Transistor
SOT-23
A
Maximum Ratings @ 25OC Unless Otherwise Specified
Symbol
VDS
ID
IDM
VGS
PD
RθJA
TJ
TSTG
Parameter
Drain-source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
Gate-source Voltage
Total Power Dissipation
Thermal Resistance Junction to Ambientb
Operating Junction Temperature
Storage Temperature
Rating
-20
-2.8
-10
±8
1.25
100
-55 to +150
-55 to +150
D
Unit
V
A
A
V
W
℃/W
℃
℃
3
1.GATE
C
1
F
2. SOURCE
B
3. DRAIN
2
E
H
G
J
K
DIMENSIONS
DIM
A
B
C
D
E
F
G
H
J
K
Internal Block Diagram
D
INCHES
MIN
.110
.083
.047
.035
.070
.018
.0005
.035
.003
.015
MAX
.120
.098
.055
.041
.081
.024
.0039
.044
.007
.020
MM
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
NOTE
Suggested Solder
Pad Layout
G
.031
.800
.035
.900
S
.079
2.000
inches
mm
.037
.950
.037
.950
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Revision: 3
1 of 5
2008/01/15
MCC
TM
SI2301
Micro Commercial Components
Electrical Characteristics
Parameter
TA = 25 C unless otherwise noted
Symbol
Test Condition
Min
-20
Typ
Max
Units
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS = 0V, ID = -250µA
Zero Gate Voltage Drain Current
IDSS
VDS = -20V, VGS = 0V
-1
µA
Gate Body Leakage Current, Forward
IGSSF
VGS = 8V, VDS = 0V
100
nA
Gate Body Leakage Current, Reverse
IGSSR
VGS = -8V, VDS = 0V
-100
nA
V
On Characteristics c
Gate Threshold Voltage
VGS(th)
Static Drain-Source
RDS(on)
On-Resistance
Forward Transconductance
Dynamic Characteristics
gFS
VGS = VDS, ID = -250µA
-0.45
V
VGS = -4.5V, ID = -2.8A
80
120
mΩ
VGS = -2.5V, ID = -2.0A
110
150
mΩ
VDS = -5V, ID = -2.8A
8
S
880
pF
270
pF
175
pF
d
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VDS = -6V, VGS = 0V,
f = 1.0 MHz
Switching Characteristics d
Turn-On Delay Time
td(on)
Turn-On Rise Time
tr
Turn-Off Delay Time
td(off)
VDD = -6V, ID = -1A,
VGS = -4.5V, RGEN = 6Ω
11
20
ns
5
10
ns
32
65
ns
Turn-Off Fall Time
tf
23
45
ns
Total Gate Charge
Qg
11
14.5
nC
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDS = -6V, ID = -2.8A,
VGS = -4.5V
1.5
nC
2.1
nC
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current b
IS
Drain-Source Diode Forward Voltage c
VSD
VGS = 0V, IS = -0.75A
-0.75
A
-1.2
V
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 5 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
www.mccsemi.com
Revision: 3
2 of 5
2008/01/15
MCC
TM
SI2301
Micro Commercial Components
10
10
25 C
-ID, Drain Current (A)
-ID, Drain Current (A)
-VGS=4.5,4,3,V
8
-VGS=2.5V
6
-VGS=2.0V
4
2
8
6
4
2
-VGS=1.5V
0
0
1
2
4
3
5
0.0
RDS(ON), Normalized
RDS(ON), On-Resistance(Ohms)
C, Capacitance (pF)
2.0
2.5
3.0
Figure 2. Transfer Characteristics
800
600
400
Coss
Crss
200
0
0
2
4
6
8
10
2.2
1.9
ID=-2.8A
VGS=-4.5V
1.6
1.3
1.0
0.7
0.4
-100
-50
0
50
100
150
200
-VDS, Drain-to-Source Voltage (V)
TJ, Junction Temperature( C)
Figure 3. Capacitance
Figure 4. On-Resistance Variation
with Temperature
VDS=VGS
-IS, Source-drain current (A)
VTH, Normalized
Gate-Source Threshold Voltage
1.5
Figure 1. Output Characteristics
Ciss
ID=-250µA
1.1
1.0
0.9
0.8
0.7
0.6
-50
1.0
-VGS, Gate-to-Source Voltage (V)
1000
1.2
0.5
-VDS, Drain-to-Source Voltage (V)
1200
1.3
-55 C
TJ=125 C
0
VGS=0V
10
10
10
-25
0
25
50
75
100
125
150
1
0
-1
0.2
0.4
0.6
0.8
1.0
1.2
TJ, Junction Temperature( C)
-VSD, Body Diode Forward Voltage (V)
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Body Diode Forward Voltage
Variation with Source Current
www.mccsemi.com
Revision: 3
3 of 5
2008/01/15
MCC
TM
SI2301
10
5 V =-6V
DS
ID=-2.8A
-ID, Drain Current (A)
-VGS, Gate to Source Voltage (V)
Micro Commercial Components
4
3
2
1
10
10
10
10
0
0
3
6
9
12
2
RDS(ON)Limit
1
1ms
10ms
100ms
1s
DC
0
-1
TA=25 C
TJ=150 C
Single Pulse
-2
10
-1
10
0
10
1
10
Qg, Total Gate Charge (nC)
-VDS, Drain-Source Voltage (V)
Figure 7. Gate Charge
Figure 8. Maximum Safe
Operating Area
2
VDD
t on
RL
V IN
D
td(off)
tf
90%
90%
VOUT
VOUT
VGS
RGEN
toff
tr
td(on)
10%
INVERTED
10%
G
90%
S
VIN
50%
50%
10%
PULSE WIDTH
Figure 10. Switching Waveforms
Figure 9. Switching Test Circuit
r(t),Normalized Effective
Transient Thermal Impedance
10
0
D=0.5
0.2
10
-1
0.1
0.05
10
PDM
0.02
0.01
-2
t1
t2
1. R JA (t)=r (t) * R JA
2. R JA=See Datasheet
3. TJM-TA = P* R JA (t)
4. Duty Cycle, D=t1/t2
Single Pulse
10
-3
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
Square Wave Pulse Duration (sec)
Figure 11. Normalized Thermal Transient Impedance Curve
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Revision: 3
4 of 5
2008/01/15
MCC
TM
Micro Commercial Components
***IMPORTANT NOTICE***
Micro Commercial Components Corp . reserves the right to make changes without further notice to any
product herein to make corrections, modifications , enhancements , improvements , or other changes .
Micro Commercial Components Corp . does not assume any liability arising out of the application or
use of any product described herein; neither does it convey any license under its patent rights ,nor
the rights of others . The user of products in such applications shall assume all risks of such use
and will agree to hold Micro Commercial Components Corp . and all the companies whose
products are represented on our website, harmless against all damages.
***APPLICATIONS DISCLAIMER***
Products offer by Micro Commercial Components Corp . are not intended for use in Medical,
Aerospace or Military Applications.
www.mccsemi.com
Revision: 3
5 of 5
2008/01/15