MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# SI2301 Features • • • • • • • P-Channel Enhancement Mode -20V,-2.8A, RDS(ON)=120mΩ@VGS=-4.5V RDS(ON)=150mΩ@VGS=-2.5V High dense cell design for extremely low RDS(ON) Rugged and reliable High Speed Switching SOT-23 Package Marking Code: S1 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Field Effect Transistor SOT-23 A Maximum Ratings @ 25OC Unless Otherwise Specified Symbol VDS ID IDM VGS PD RθJA TJ TSTG Parameter Drain-source Voltage Drain Current-Continuous Drain Current-Pulsed a Gate-source Voltage Total Power Dissipation Thermal Resistance Junction to Ambientb Operating Junction Temperature Storage Temperature Rating -20 -2.8 -10 ±8 1.25 100 -55 to +150 -55 to +150 D Unit V A A V W ℃/W ℃ ℃ 3 1.GATE C 1 F 2. SOURCE B 3. DRAIN 2 E H G J K DIMENSIONS DIM A B C D E F G H J K Internal Block Diagram D INCHES MIN .110 .083 .047 .035 .070 .018 .0005 .035 .003 .015 MAX .120 .098 .055 .041 .081 .024 .0039 .044 .007 .020 MM MIN 2.80 2.10 1.20 .89 1.78 .45 .013 .89 .085 .37 MAX 3.04 2.64 1.40 1.03 2.05 .60 .100 1.12 .180 .51 NOTE Suggested Solder Pad Layout G .031 .800 .035 .900 S .079 2.000 inches mm .037 .950 .037 .950 www.mccsemi.com Revision: 3 1 of 5 2008/01/15 MCC TM SI2301 Micro Commercial Components Electrical Characteristics Parameter TA = 25 C unless otherwise noted Symbol Test Condition Min -20 Typ Max Units Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = -250µA Zero Gate Voltage Drain Current IDSS VDS = -20V, VGS = 0V -1 µA Gate Body Leakage Current, Forward IGSSF VGS = 8V, VDS = 0V 100 nA Gate Body Leakage Current, Reverse IGSSR VGS = -8V, VDS = 0V -100 nA V On Characteristics c Gate Threshold Voltage VGS(th) Static Drain-Source RDS(on) On-Resistance Forward Transconductance Dynamic Characteristics gFS VGS = VDS, ID = -250µA -0.45 V VGS = -4.5V, ID = -2.8A 80 120 mΩ VGS = -2.5V, ID = -2.0A 110 150 mΩ VDS = -5V, ID = -2.8A 8 S 880 pF 270 pF 175 pF d Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = -6V, VGS = 0V, f = 1.0 MHz Switching Characteristics d Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) VDD = -6V, ID = -1A, VGS = -4.5V, RGEN = 6Ω 11 20 ns 5 10 ns 32 65 ns Turn-Off Fall Time tf 23 45 ns Total Gate Charge Qg 11 14.5 nC Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS = -6V, ID = -2.8A, VGS = -4.5V 1.5 nC 2.1 nC Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current b IS Drain-Source Diode Forward Voltage c VSD VGS = 0V, IS = -0.75A -0.75 A -1.2 V Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 5 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. www.mccsemi.com Revision: 3 2 of 5 2008/01/15 MCC TM SI2301 Micro Commercial Components 10 10 25 C -ID, Drain Current (A) -ID, Drain Current (A) -VGS=4.5,4,3,V 8 -VGS=2.5V 6 -VGS=2.0V 4 2 8 6 4 2 -VGS=1.5V 0 0 1 2 4 3 5 0.0 RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) C, Capacitance (pF) 2.0 2.5 3.0 Figure 2. Transfer Characteristics 800 600 400 Coss Crss 200 0 0 2 4 6 8 10 2.2 1.9 ID=-2.8A VGS=-4.5V 1.6 1.3 1.0 0.7 0.4 -100 -50 0 50 100 150 200 -VDS, Drain-to-Source Voltage (V) TJ, Junction Temperature( C) Figure 3. Capacitance Figure 4. On-Resistance Variation with Temperature VDS=VGS -IS, Source-drain current (A) VTH, Normalized Gate-Source Threshold Voltage 1.5 Figure 1. Output Characteristics Ciss ID=-250µA 1.1 1.0 0.9 0.8 0.7 0.6 -50 1.0 -VGS, Gate-to-Source Voltage (V) 1000 1.2 0.5 -VDS, Drain-to-Source Voltage (V) 1200 1.3 -55 C TJ=125 C 0 VGS=0V 10 10 10 -25 0 25 50 75 100 125 150 1 0 -1 0.2 0.4 0.6 0.8 1.0 1.2 TJ, Junction Temperature( C) -VSD, Body Diode Forward Voltage (V) Figure 5. Gate Threshold Variation with Temperature Figure 6. Body Diode Forward Voltage Variation with Source Current www.mccsemi.com Revision: 3 3 of 5 2008/01/15 MCC TM SI2301 10 5 V =-6V DS ID=-2.8A -ID, Drain Current (A) -VGS, Gate to Source Voltage (V) Micro Commercial Components 4 3 2 1 10 10 10 10 0 0 3 6 9 12 2 RDS(ON)Limit 1 1ms 10ms 100ms 1s DC 0 -1 TA=25 C TJ=150 C Single Pulse -2 10 -1 10 0 10 1 10 Qg, Total Gate Charge (nC) -VDS, Drain-Source Voltage (V) Figure 7. Gate Charge Figure 8. Maximum Safe Operating Area 2 VDD t on RL V IN D td(off) tf 90% 90% VOUT VOUT VGS RGEN toff tr td(on) 10% INVERTED 10% G 90% S VIN 50% 50% 10% PULSE WIDTH Figure 10. Switching Waveforms Figure 9. Switching Test Circuit r(t),Normalized Effective Transient Thermal Impedance 10 0 D=0.5 0.2 10 -1 0.1 0.05 10 PDM 0.02 0.01 -2 t1 t2 1. R JA (t)=r (t) * R JA 2. R JA=See Datasheet 3. TJM-TA = P* R JA (t) 4. Duty Cycle, D=t1/t2 Single Pulse 10 -3 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 Square Wave Pulse Duration (sec) Figure 11. Normalized Thermal Transient Impedance Curve www.mccsemi.com Revision: 3 4 of 5 2008/01/15 MCC TM Micro Commercial Components ***IMPORTANT NOTICE*** Micro Commercial Components Corp . reserves the right to make changes without further notice to any product herein to make corrections, modifications , enhancements , improvements , or other changes . Micro Commercial Components Corp . does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights ,nor the rights of others . The user of products in such applications shall assume all risks of such use and will agree to hold Micro Commercial Components Corp . and all the companies whose products are represented on our website, harmless against all damages. ***APPLICATIONS DISCLAIMER*** Products offer by Micro Commercial Components Corp . are not intended for use in Medical, Aerospace or Military Applications. www.mccsemi.com Revision: 3 5 of 5 2008/01/15