CED1710/CEU1710 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 100V, 17A, RDS(ON) = 85mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. G D G S CEU SERIES TO-252(D-PAK) ABSOLUTE MAXIMUM RATINGS Parameter G D S CED SERIES TO-251(I-PAK) Tc = 25 C unless otherwise noted Symbol Limit Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous Drain Current-Pulsed S a Maximum Power Dissipation @ TC = 25 C Operating and Store Temperature Range Units V ±20 V ID 17 A IDM 68 A 50 W PD - Derate above 25 C 100 0.4 W/ C TJ,Tstg -55 to 150 C Thermal Characteristics Symbol Limit Units Thermal Resistance, Junction-to-Case Parameter RθJC 2.5 C/W Thermal Resistance, Junction-to-Ambient RθJA 50 C/W This is preliminary information on a new product in development now . Details are subject to change without notice . 1 2005.May http://www.cetsemi.com CED1710/CEU1710 Electrical Characteristics Parameter Tc = 25 C unless otherwise noted Symbol Test Condition Min Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA 100 Zero Gate Voltage Drain Current IDSS Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse Typ Max Units VDS = 100, VGS = 0V 1 µA IGSSF VGS = 20V, VDS = 0V 100 nA IGSSR VGS = -20V, VDS = 0V -100 nA VGS(th) VGS = VDS, ID = 250µA 4 V RDS(on) VGS = 10V, ID = 15A 65 85 mΩ gFS VDS = 2.5V, ID = 15A 11 S 702 pF 200 pF 88 pF Off Characteristics V On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteristics 2 c Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = 25V, VGS = 0V, f = 1.0 MHz Switching Characteristics c Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) VDD = 50V, ID = 19A, VGS = 10V, RGEN = 25Ω 17 34 ns 51 100 ns 16 32 ns Turn-Off Fall Time tf 71 140 ns Total Gate Charge Qg 26 34 nC Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS = 80V, ID = 19A, VGS = 10V 3.3 nC 16.2 nC Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current IS Drain-Source Diode Forward Voltage b VSD VGS = 0V, IS = 15A Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. 2 15 A 1.5 V 4 CED1710/CEU1710 6 50 25 C 5 ID, Drain Current (A) ID, Drain Current (A) VGS=10,8,6V 4 VGS=5V 3 2 1 40 30 20 -55 C TJ=125 C 10 VGS=4V 0 0.0 0 0.5 1.0 1.5 2.0 2.5 3.0 1 RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) C, Capacitance (pF) 6 7 Figure 2. Transfer Characteristics 800 600 400 Coss 200 Crss 0 0 5 10 15 20 25 2.2 1.9 ID=15A VGS=10V 1.6 1.3 1.0 0.7 0.4 -100 -50 0 50 100 150 200 VDS, Drain-to-Source Voltage (V) TJ, Junction Temperature( C) Figure 3. Capacitance Figure 4. On-Resistance Variation with Temperature VDS=VGS IS, Source-drain current (A) VTH, Normalized Gate-Source Threshold Voltage 5 Figure 1. Output Characteristics Ciss ID=250µA 1.1 1.0 0.9 0.8 0.7 0.6 -50 4 VGS, Gate-to-Source Voltage (V) 1000 1.2 3 VDS, Drain-to-Source Voltage (V) 1200 1.3 2 VGS=0V 10 10 10 -25 0 25 50 75 100 125 150 2 1 0 0.2 0.6 1.0 1.4 1.8 2.2 TJ, Junction Temperature( C) VSD, Body Diode Forward Voltage (V) Figure 5. Gate Threshold Variation with Temperature Figure 6. Body Diode Forward Voltage Variation with Source Current 3 10 10 VDS=80V ID=19A 6 4 2 0 5 10 15 20 25 30 4 100µs 10 1 1ms 10ms DC 10 10 0 2 RDS(ON)Limit 8 ID, Drain Current (A) VGS, Gate to Source Voltage (V) CED1710/CEU1710 0 TC=25 C TJ=150 C Single Pulse -1 10 -1 10 0 10 1 10 Qg, Total Gate Charge (nC) VDS, Drain-Source Voltage (V) Figure 7. Gate Charge Figure 8. Maximum Safe Operating Area VDD t on RL V IN D td(off) tf 90% 90% VOUT VOUT VGS RGEN toff tr td(on) 10% INVERTED 10% G 90% S VIN 50% 50% 10% PULSE WIDTH Figure 10. Switching Waveforms r(t),Normalized Effective Transient Thermal Impedance Figure 9. Switching Test Circuit 10 0 D=0.5 0.2 10 0.1 -1 PDM 0.05 0.02 0.01 t1 t2 1. RθJC (t)=r (t) * RθJC 2. RθJC=See Datasheet 3. TJM-TC = P* RθJC (t) 4. Duty Cycle, D=t1/t2 Single Pulse 10 -2 10 -2 10 -1 10 0 10 1 10 2 Square Wave Pulse Duration (msec) Figure 11. Normalized Thermal Transient Impedance Curve 4 10 3 10 4 2