CEM2187 P-Channel Enhancement Mode Field Effect Transistor FEATURES -20V, -7.6A, RDS(ON) = 22mΩ @VGS = -4.5V. RDS(ON) = 32mΩ @VGS = -2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. SO-8 1 ABSOLUTE MAXIMUM RATINGS D1 8 D1 7 D2 6 D2 5 1 S1 2 G1 3 S2 4 G2 TA = 25 C unless otherwise noted Symbol Limit Drain-Source Voltage VDS -20 Units V Gate-Source Voltage VGS ±12 V ID -7.6 A IDM -30 A PD 2.0 W TJ,Tstg -55 to 150 C Symbol Limit Units RθJA 62.5 C/W Parameter Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b This is preliminary information on a new product in development now . Details are subject to change without notice . 1 Rev 2. 2010.Oct http://www.cetsemi.com CEM2187 P-Channel Electrical Characteristics Parameter TA = 25 C unless otherwise noted Symbol Test Condition Min Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = -250µA -20 Zero Gate Voltage Drain Current IDSS Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse Typ Max Units VDS = -20V, VGS = 0V -1 µA IGSSF VGS = 12V, VDS = 0V 100 nA IGSSR VGS = -12V, VDS = 0V -100 nA Off Characteristics V On Characteristics c Gate Threshold Voltage Static Drain-Source On-Resistance VGS(th) RDS(on) Dynamic Characteristics d Forward Transconductance gFS Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VGS = VDS, ID = -250µA -1.3 V VGS = -4.5V, ID = -7.6A 17 22 mΩ VGS = -2.5V, ID = -6A 24 32 mΩ VDS = -9V, ID = -7.6A VDS = -10V, VGS = 0V, f = 1.0 MHz -0.4 32 S 2805 pF 505 pF 395 pF Switching Characteristics d Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) VDD = -6V, ID = -1A, VGS = -4.5V, RGEN = 6Ω 20 40 ns 18 36 ns 89 178 ns Turn-Off Fall Time tf 49 98 ns Total Gate Charge Qg 31.5 41 nC Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS = -6V, ID = -7.6A, VGS = -4.5V 3.8 nC 8.8 nC Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current b IS Drain-Source Diode Forward Voltage c VSD VGS = 0V, IS = -2.5A Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. 2 -7.6 A -1.2 V CEM2187 15 -VGS=1.5,4,4.5V 4 -ID, Drain Current (A) -ID, Drain Current (A) 5 3 2 1 -VGS=1V 0 0.0 0.25 0.5 0.75 1.00 1.25 0.0 0.5 1 1.5 2 2.5 3 Figure 2. Transfer Characteristics RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) 1200 Coss 600 Crss 2 4 6 8 10 12 2.2 1.9 ID=-7.6A VGS=-4.5V 1.6 1.3 1.0 0.7 0.4 -100 -50 0 50 100 150 200 -VDS, Drain-to-Source Voltage (V) TJ, Junction Temperature( C) Figure 3. Capacitance Figure 4. On-Resistance Variation with Temperature VDS=VGS -IS, Source-drain current (A) C, Capacitance (pF) VTH, Normalized Gate-Source Threshold Voltage -55 C Figure 1. Output Characteristics 1800 ID=-250µA 1.1 1.0 0.9 0.8 0.7 0.6 -50 TJ=125 C 3 -VGS, Gate-to-Source Voltage (V) 2400 1.2 6 -VDS, Drain-to-Source Voltage (V) 3000 1.3 9 0 Ciss 0 12 1.5 3600 0 25 C -25 0 25 50 75 100 125 150 VGS=0V 10 1 10 0 10 -1 0.4 0.6 0.8 1.0 1.2 1.4 TJ, Junction Temperature( C) -VSD, Body Diode Forward Voltage (V) Figure 5. Gate Threshold Variation with Temperature Figure 6. Body Diode Forward Voltage Variation with Source Current 3 5 V =-6V DS ID=-7.6A 4 -ID, Drain Current (A) -VGS, Gate to Source Voltage (V) CEM2187 3 2 1 0 0 7 14 21 28 35 10 2 10 1 10 0 10 -1 10 -2 RDS(ON)Limit 10ms 100ms 1s DC TA=25 C TJ=150 C Single Pulse 10 -2 10 -1 10 0 10 1 10 Qg, Total Gate Charge (nC) -VDS, Drain-Source Voltage (V) Figure 7. Gate Charge Figure 8. Maximum Safe Operating Area VDD t on V IN RL D RGEN td(off) tf 90% 90% VOUT VGS toff tr td(on) VOUT INVERTED 10% 10% G 90% S VIN 50% 50% 10% PULSE WIDTH Figure 10. Switching Waveforms r(t),Normalized Effective Transient Thermal Impedance Figure 9. Switching Test Circuit 10 0 D=0.5 0.2 10 PDM 0.1 -1 t1 0.05 1. RθJA (t)=r (t) * RθJA 2. RθJA=See Datasheet 3. TJM-TA = P* RθJA (t) 4. Duty Cycle, D=t1/t2 0.02 10 Single Pulse -2 10 -4 10 -3 t2 10 -2 10 -1 10 0 Square Wave Pulse Duration (sec) Figure 11. Normalized Thermal Transient Impedance Curve 4 10 1 10 2 2