MITSUBISHI HVIGBT MODULES CM1200HG-66H HIGH POWER SWITCHING USE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE CM1200HG-66H ● IC ............................................................... 1200 A ● VCES ...................................................... 3300 V ● High Insulated Type ● 1-element in a Pack ● AISiC Baseplate APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 190 ±0.5 57 ±0.25 5-M8 NUTS 57 ±0.25 17 ±0.1 57 ±0.25 5 3 1 G (2) C C E (5) E (3) E (1) G E 9 ±0.1 E (4) C C 140 ±0.5 2 44 ±0.3 4 124 ±0.25 6 (6) C CIRCUIT DIAGRAM screwing depth min. 16.5 41 ±0.5 22 ±0.3 LABEL +1.0 0 5 ±0.15 18 ±0.3 40.4 ±0.3 61.2 ±0.5 12 ±0.3 38 61.2 ±0.5 screwing depth min. 7.7 59.2 ±0.5 +1.0 0 14 ±0.3 8-φ7 MOUNTING HOLES 48 3-M4 NUTS HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules May 2009 1 MITSUBISHI HVIGBT MODULES CM1200HG-66H HIGH POWER SWITCHING USE INSULATED TYPE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules MAXIMUM RATINGS Symbol VCES VGES IC ICM IE IEM Pc Viso Ve Tj Top Tstg tpsc Item Collector-emitter voltage Gate-emitter voltage Collector current Emitter current (Note 2) Conditions VGE = 0V, Tj = 25°C VCE = 0V, Tj = 25°C DC, Tc = 80°C Pulse DC Pulse Tc = 25°C, IGBT part RMS, sinusoidal, f = 60Hz, t = 1 min. RMS, sinusoidal, f = 60Hz, QPD ≤ 10 pC Ratings 3300 ± 20 1200 2400 1200 2400 13800 10200 5100 –40 ~ +150 –40 ~ +125 –40 ~ +125 10 (Note 1) (Note 1) Maximum power dissipation (Note 3) Isolation voltage Partial discharge extinction voltage Junction temperature Operating temperature Storage temperature Maximum short circuit pulse width VCC = 2200V, VCE ≤ VCES, VGE = 15V, Tj = 125°C Unit V V A A A A W V V °C °C °C µs ELECTRICAL CHARACTERISTICS Symbol Item Conditions Tj = 25°C Tj = 125°C ICES Collector cutoff current VCE = VCES, VGE = 0V VGE(th) IGES Cies Coes Cres Qg Gate-emitter threshold voltage Gate leakage current Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Collector-emitter saturation voltage Turn-on delay time Turn-on rise time Turn-on switching energy (Note 5) Turn-off delay time Turn-off fall time Turn-off switching energy (Note 5) Emitter-collector voltage (Note 2) Reverse recovery time (Note 2) Reverse recovery charge (Note 2) Reverse recovery energy (Note 2), (Note 5) VCE = 10 V, IC = 120 mA, Tj = 25°C VGE = VGES, VCE = 0V, Tj = 25°C VCE(sat) td(on) tr Eon(10%) td(off) tf Eoff(10%) VEC trr Qrr Erec(10%) VCE = 10 V, VGE = 0 V, f = 100 kHz, Tj = 25°C VCC = 1650 V, IC = 1200 A, VGE = ±15 V, Tj = 25°C IC = 1200 A (Note 4) Tj = 25°C VGE = 15 V Tj = 125°C VCC = 1650 V, IC = 1200 A, VGE = ±15 V RG = 1.6 Ω, Tj = 125°C, Ls = 100 nH Inductive load VCC = 1650 V, IC = 1200 A, VGE = ±15 V RG = 1.6 Ω, Tj = 125°C, Ls = 100 nH Inductive load IE = 1200 A VGE = 0 V (Note 4) VCC = 1650 V, IE = 1200 A, VGE = ±15 V RG = 1.6 Ω, Tj = 125°C, Ls = 100 nH Inductive load Tj = 25°C Tj = 125°C Min — — 5.0 — — — — — — — — — Limits Typ — 24 6.0 — 180 18 5.4 15 3.30 3.60 — — Max 15 60 7.0 0.5 — — — — — — 1.60 1.00 — 1.60 — J/P — — — — 2.50 1.00 µs µs — 1.55 — J/P — — 2.80 2.70 — — V — — 1.40 µs — 800 — µC — 0.90 — J/P Unit mA V µA nF nF nF µC V µs µs HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules May 2009 2 MITSUBISHI HVIGBT MODULES CM1200HG-66H 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE THERMAL CHARACTERISTICS Symbol Rth(j-c)Q Rth(j-c)R Rth(c-f) Item Thermal resistance Thermal resistance Contact thermal resistance Conditions Junction to Case, IGBT part Junction to Case, FWDi part Case to Fin, λgrease = 1W/m·K, D(c-f) = 100 µm Min — — — Limits Typ — — 6.0 Max 9.0 17.5 — Min 7.0 3.0 1.0 — 600 26 56 — — Limits Typ — — — 1.35 — — — 17 0.14 Max 15.0 6.0 3.0 — — — — — — Unit K/kW K/kW K/kW MECHANICAL CHARACTERISTICS Symbol Mt Ms Mt m CTI da ds LP CE RCC’+EE’ Item Mounting torque Mass Comparative tracking index Clearance Creepage distance Internal inductance Internal lead resistance Conditions M8: Main terminals screw M6: Mounting screw M4: Auxiliary terminals screw Tc = 25°C Unit N·m N·m N·m kg — mm mm nH mΩ Note 1. Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed Topmax rating (125°C). 2. The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi). 3. Junction temperature (Tj) should not exceed Tjmax rating (150°C). 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. 5. Eon(10%) / Eoff(10%) / Erec(10%) are the integral of 0.1VCE x 0.1IC x dt. HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules May 2009 3 MITSUBISHI HVIGBT MODULES CM1200HG-66H HIGH POWER SWITCHING USE INSULATED TYPE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) 2400 2400 VCE = 20V Tj = 125°C 2000 VGE = 20V COLLECTOR CURRENT (A) COLLECTOR CURRENT (A) 2000 VGE = 15V 1600 VGE = 12V VGE = 10V 1200 VGE = 8V 800 400 1600 1200 800 400 Tj = 25°C Tj = 125°C 0 0 1 2 3 4 5 0 6 0 2 4 6 8 10 COLLECTOR-EMITTER VOLTAGE (V) GATE-EMITTER VOLTAGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 12 2400 2400 VGE = 15V 2000 EMITTER CURRENT (A) COLLECTOR CURRENT (A) 2000 1600 1200 800 400 1600 1200 800 400 Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 0 0 1 2 3 4 5 0 6 COLLECTOR-EMITTER SATURATION VOLTAGE (V) 0 1 2 3 4 5 6 EMITTER-COLLECTOR VOLTAGE (V) HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules May 2009 4 MITSUBISHI HVIGBT MODULES CM1200HG-66H 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules CAPACITANCE CHARACTERISTICS (TYPICAL) HIGH POWER SWITCHING USE INSULATED TYPE GATE CHARGE CHARACTERISTICS (TYPICAL) 103 20 VCE = 1650V, IC = 1200A Tj = 25°C 7 5 15 3 CAPACITANCE (nF) GATE-EMITTER VOLTAGE (V) Cies 2 102 7 5 3 2 Coes 101 7 5 5 0 -5 Cres 3 -10 VGE = 0V, Tj = 25°C f = 100kHz 2 100 -1 10 5 7 100 2 3 2 3 5 7 101 2 3 -15 5 7 102 0 5000 10000 15000 COLLECTOR-EMITTER VOLTAGE (V) GATE CHARGE (µC) HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) 3 20000 6 Eon VCC = 1650V, VGE = ±15V RG = 1.6Ω, Tj = 125°C Inductive load VCC = 1650V, IC = 1200A VGE = ±15V, Tj = 125°C Inductive load 5 2 SWITCHING ENERGIES (J/P) 2.5 SWITCHING ENERGIES (J/P) 10 Eoff 1.5 1 Erec 0.5 Eon 4 3 Eoff 2 1 Erec 0 0 400 800 1200 1600 2000 0 2400 0 5 10 15 20 GATE RESISTOR (Ω) COLLECTOR CURRENT (A) HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules May 2009 5 MITSUBISHI HVIGBT MODULES CM1200HG-66H HIGH POWER SWITCHING USE INSULATED TYPE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules FREE-WHEEL DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 101 7 7 5 td(off) 3 2 td(on) 100 tf 7 5 4 3 3 4 5 7 103 2 3 4 5 3 lrr 2 101 103 7 5 7 5 3 3 2 2 100 102 trr 7 5 tr 2 7 5 2 2 10-1 2 10 104 VCC = 1650V, VGE = ±15V RG = 1.6Ω, Tj = 125°C Inductive load 3 REVERSE RECOVERY TIME (µs) 5 4 SWITCHING TIMES (µs) 102 VCC = 1650V, VGE = ±15V RG = 1.6Ω, Tj = 125°C Inductive load 3 3 2 2 10-1 2 10 7 104 7 5 2 3 4 5 REVERSE RECOVERY CURRENT (A) HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) 101 7 103 2 3 4 5 7 104 EMITTER CURRENT (A) COLLECTOR CURRENT (A) 1.2 Rth(j–c)Q = 9.0K/kW Rth(j–c)R = 17.5K/kW 1.0 n Z 0.8 (t) = th( j –c ) 0.6 Σ R 1–exp i NORMALIZED TRANSIENT THERMAL IMPEDANCE TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS – t ti i=1 1 2 3 4 Ri [K/kW] 0.0059 0.0978 0.6571 0.2392 τ i [sec] 0.0002 0.0074 0.0732 0.4488 0.4 0.2 0 -3 10 2 3 5 7 10-2 2 3 5 7 10-1 2 3 5 7 100 2 3 5 7 101 TIME (s) HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules May 2009 6 MITSUBISHI HVIGBT MODULES CM1200HG-66H 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE SHORT CIRCUIT SAFE OPERATING AREA (SCSOA) REVERSE BIAS SAFE OPERATING AREA (RBSOA) 3000 20000 VCC ≤ 2200V, VGE = ±15V Tj = 125°C, RG ≥ 1.6Ω VCC ≤ 2200V, VGE = ±15V Tj = 125°C, RG ≥ 1.6Ω COLLECTOR CURRENT (A) COLLECTOR CURRENT (A) 2500 2000 1500 1000 15000 10000 5000 500 0 0 1000 2000 3000 0 4000 0 1000 2000 3000 4000 COLLECTOR-EMITTER VOLTAGE (V) COLLECTOR-EMITTER VOLTAGE (V) FREE-WHEEL DIODE REVERSE RECOVERY SAFE OPERATING AREA (RRSOA) REVERSE RECOVERY CURRENT (A) 3000 VCC ≤ 2200V, di/dt ≤ 5400A/µs Tj = 125°C 2500 2000 1500 1000 500 0 0 1000 2000 3000 4000 COLLECTOR-EMITTER VOLTAGE (V) HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules May 2009 7