< HVIGBT MODULES > CM800HC-90R HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules CM800HC-90R IC ················································································800A VCES ······································································4500V 1-element in a pack Insulated type LPT-IGBT / Soft Recovery Diode AlSiC baseplate APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers OUTLINE DRAWING & CIRCUIT DIAGRAM December 2012 HVM-1065-B Dimensions in mm 1 < HVIGBT MODULES > CM800HC-90R HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules MAXIMUM RATINGS Symbol Item VCES Collector-emitter voltage VGES IC ICRM IE IERM Ptot Viso Ve Tj Tjop Tstg Gate-emitter voltage Maximum power dissipation (Note 3) Isolation voltage Partial discharge extinction voltage Junction temperature Operating junction temperature Storage temperature tpsc Short circuit pulse width Collector current Emitter current (Note 2) Conditions VGE = 0V, Tj = -40…+125°C VGE = 0V, Tj = −50°C VCE = 0V, Tj = 25°C DC, Tc = 85°C Pulse (Note 1) DC Pulse (Note 1) Tc = 25°C, IGBT part RMS, sinusoidal, f = 60Hz, t = 1 min. RMS, sinusoidal, f = 60Hz, QPD ≤ 10 pC Ratings 4500 4400 ± 20 800 1600 800 1600 8300 6000 3500 −50 ~ +150 −50 ~ +125 −55 ~ +125 10 VCC = 3200V, VCE ≤ VCES, VGE =15V, Tj =125°C Unit V V A A A A W V V °C °C °C s ELECTRICAL CHARACTERISTICS Symbol Item Conditions Tj = 25°C Tj = 125°C ICES Collector cutoff current VCE = VCES, VGE = 0V VGE(th) IGES Cies Coes Cres QG Gate-emitter threshold voltage Gate leakage current Input capacitance Output capacitance Reverse transfer capacitance Total gate charge VCE = 10 V, IC = 80 mA, Tj = 25°C VGE = VGES, VCE = 0V, Tj = 25°C VCEsat Collector-emitter saturation voltage td(on) Turn-on delay time tr Turn-on rise time Eon(10%) Turn-on switching energy (Note 5) Eon Turn-on switching energy (Note 6) td(off) Turn-off delay time tf Turn-off fall time Eoff(10%) Turn-off switching energy (Note 5) Eoff Turn-off switching energy (Note 6) VCE = 10 V, VGE = 0 V, f = 100 kHz Tj = 25°C VCC = 2800V, IC = 800A, VGE = ±15V, Tj = 25°C IC = 800 A (Note 4) Tj = 25°C VGE = 15 V Tj = 125°C Tj = 25°C Tj = 125°C VCC = 2800 V Tj = 25°C IC = 800 A VGE = ±15 V Tj = 125°C RG(on) = 4.0 Ω Tj = 25°C Ls = 150 nH Tj = 125°C Inductive load Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C VCC = 2800 V Tj = 25°C IC = 800 A Tj = 125°C VGE = ±15 V RG(off) = 15 Ω Tj = 25°C Ls = 150 nH Tj = 125°C Inductive load Tj = 25°C Tj = 125°C December 2012 2 Min — — 5.8 — — — — — — — — — — — — — — — — — — — — — — — Limits Typ — 10.0 6.3 — 117.0 7.3 3.3 9.0 3.50 4.40 1.00 0.95 0.28 0.30 2.90 3.55 3.10 3.80 3.60 3.80 0.35 0.45 1.95 2.55 2.15 2.85 Max 10.0 — 6.8 0.5 — — — — — 5.10 — 1.50 — 0.50 — — — — — 5.00 — 1.00 — — — — Unit mA V µA nF nF nF µC V µs µs J J µs µs J J < HVIGBT MODULES > CM800HC-90R HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules ELECTRICAL CHARACTERISTICS (continuation) Symbol Item Conditions (Note 2) VEC Emitter-collector voltage trr Reverse recovery time (Note 2) Irr Reverse recovery current (Note 2) Qrr Reverse recovery charge (Note 2) Reverse recovery energy (Note 2) Erec(10%) Erec (Note 5) Reverse recovery energy IE = 800 A (Note 4) VGE = 0 V Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C VCC = 2800 V IC = 800 A VGE = ±15 V RG(on) = 4.0 Ω Ls = 150 nH Inductive load (Note 2) (Note 6) Min — — — — — — — — — — — — Limits Typ 2.50 2.80 0.70 0.90 780 850 660 1000 0.85 1.35 1.00 1.55 Max — 3.40 — — — — — — — — — — Min — — — Limits Typ — — 9.0 Max 15.0 28.5 — Min 7.0 3.0 1.0 — 600 19.5 32.0 — — — Limits Typ — — — 0.9 — — — 16.5 0.18 2.5 Max 22.0 6.0 3.0 — — — — — — — Unit V µs A µC J J THERMAL CHARACTERISTICS Symbol Rth(j-c)Q Rth(j-c)D Rth(c-s) Item Thermal resistance Contact thermal resistance Conditions Junction to Case, IGBT part Junction to Case, FWDi part Case to heat sink, grease = 1W/m·k, D(c-s) = 100m Unit K/kW K/kW K/kW MECHANICAL CHARACTERISTICS Symbol Mt Ms Mt m CTI da ds LP CE RCC’+EE’ rg Item Mounting torque Mass Comparative tracking index Clearance Creepage distance Parasitic stray inductance Internal lead resistance Internal gate resistance Conditions M8 : Main terminals screw M6 : Mounting screw M4 : Auxiliary terminals screw TC = 25°C TC = 25°C Note1. Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed Topmax rating. 2. The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi). 3. Junction temperature (Tj) should not exceed Tjmax rating (150°C). 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. 5. Eon(10%) / Eoff(10%) / Erec(10%) are the integral of 0.1VCE x 0.1IC x dt. 6. Definition of all items is according to IEC 60747, unless otherwise specified. December 2012 3 Unit N·m N·m N·m kg — mm mm nH mΩ Ω < HVIGBT MODULES > CM800HC-90R HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) 1600 1600 T j = 25°C 1200 VGE = 16V VGE = 11V VGE = 15V 800 VGE = 10V Collector Current [A] Collector Current [A] 1200 V CE = VGE VGE = 13V 400 800 400 0 T j = 125°C Tj = 25°C 0 0 2 4 6 8 0 Collector - Emitter Voltage [V] 4 8 12 16 Gate - Emitter Voltage [V] FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 1600 1600 V GE = 15V 1200 Tj = 25°C Emitter Current [A] Collector Current [A] 1200 Tj = 125°C 800 400 Tj = 25°C Tj = 125°C 800 400 0 0 0 2 4 6 8 0 Collector-Emitter Saturation Voltage [V] 1 2 3 4 Emitter-Collector Voltage [V] December 2012 4 5 < HVIGBT MODULES > CM800HC-90R HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules PERFORMANCE CURVES CAPACITANCE CHARACTERISTICS (TYPICAL) GATE CHARGE CHARACTERISTICS (TYPICAL) 20 1000 V CE = 2800V, IC = 800A Tj = 25°C 15 Gate-Emitter Voltage [V] Capacitance [nF] Cies 100 10 Coes V GE = 0V, Tj = 25°C f = 100kHz 10 5 0 -5 -10 Cres 1 -15 0.1 1 10 0 100 2 4 Collector-Emitter Voltage [V] 8 V CC = 2800V, IC = 800A V GE = ±15V, LS = 150nH Tj = 125°C, Inductive load Inductive load 6 E of f 4 E rec Switching Energies [J] Switching Energies [J] 8 2 0 0 400 800 10 HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) Eon VCC = 2800V, VGE = ±15V RG(on) = 4.0Ω, RG(off) = 15Ω LS = 150nH, Tj = 125°C 8 Gate Charge [µC] HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) 10 6 1200 6 Eon 4 Erec 2 0 1600 2 Collector Current [A] December 2012 5 4 6 Gate resistor [Ohm] 8 10 < HVIGBT MODULES > CM800HC-90R HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules PERFORMANCE CURVES SWITCHING ENERGY CHARACTERISTICS (TYPICAL) HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL)HALF-BRIDGE 8 100 VC C = 2800V, IC = 800A VGE = ±15V, LS = 150nH VCC = 2800V, VGE = ±15V RG( on) = 4.0Ω, RG(off) = 15Ω LS = 150nH, Tj = 125°C Inductive load 6 10 Switching Times [µs] Switching Energies [J] Tj = 125°C, Inductive load 4 Eoff 2 0 10 15 20 25 td(off) td(on) 1 tf 0.1 tr 0.01 100 30 Gate resistor [Ohm] REVERSE BIAS SAFE OPERATING AREA (RBSOA) 10000 2500 VCC = 2800V, VGE = ±15V VC C 3200V, VGE = ±15V Tj = 125°C, RG(off ) = 15Ω 1 0.1 100 trr 1000 1000 100 2000 Collector Current [A] Irr Reverse Recovery Current [A] Reverse Recovery Time [µs] RG(on) = 4.0Ω, LS = 150nH Tj = 125°C, Inductive load 10 10000 Collector Current [A] FREE-WHEEL DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 100 1000 1500 1000 500 10 10000 0 0 Emitter Current [A] 1000 2000 3000 4000 Collector-Emitter Voltage [V] December 2012 6 5000 < HVIGBT MODULES > CM800HC-90R HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules PERFORMANCE CURVES SHORT CIRCUIT SAFE OPERATING AREA (SCSOA) FREE-WHEEL DIODE REVERSE RECOVERY SAFE OPERATING AREA (RRSOA) 10 2500 VC C 3200V, di/dt < 4kA/µs Tj = 125°C VCC 3200V, V GE = ±15V Tj = 125°C, RG(on) = 4.0Ω, RG(off) = 15Ω Reverse Recovery Current [A] Collector Current [kA] 8 6 4 2 2000 1500 1000 500 0 0 0 1000 2000 3000 4000 5000 0 Collector-Emitter Voltage [V] 1000 2000 3000 4000 5000 Emitter-Collector Voltage [V] TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS Normalized Transient Thermal impedance 1.2 Rth(j-c)Q = 15.0K/kW Rth(j-c)D = 28.5K/kW 1 Z (t ) th( j c ) n R 1 exp i 1 0.8 0.6 0.1 1 1 0.0096 2 0.1893 3 0.4044 4 0.3967 ti [sec] : 0.0001 0.0058 0.0602 0.3512 0.2 0.01 t i Ri [K/kW] : 0.4 0 0.001 i 10 Time [s] December 2012 7 < HVIGBT MODULES > CM800HC-90R HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Keep safety first in your circuit designs! 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