< HVIGBT MODULES > CM750HG-130R HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules CM750HG-130R IC ··································································· 750A VCES ·························································· 6500V 1-element in a pack High Insulated type LPT-IGBT / Soft Recovery Diode AlSiC baseplate APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers OUTLINE DRAWING & CIRCUIT DIAGRAM January 2013 HVM-1058-C Dimensions in mm 1 < HVIGBT MODULES > CM750HG-130R HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules MAXIMUM RATINGS Symbol Item VCES Collector-emitter voltage VGES IC ICRM IE IERM Ptot Viso Ve Tj Tjop Tstg Gate-emitter voltage Maximum power dissipation (Note 3) Isolation voltage Partial discharge extinction voltage Junction temperature Operating junction temperature Storage temperature tpsc Short circuit pulse width Collector current Emitter current (Note 2) Conditions VGE = 0V, Tj = +125°C VGE = 0V, Tj = +25°C VGE = 0V, Tj = −50°C VCE = 0V, Tj = 25°C DC, Tc = 95°C Pulse (Note 1) DC Pulse (Note 1) Tc = 25°C, IGBT part RMS, sinusoidal, f = 60Hz, t = 1 min. RMS, sinusoidal, f = 60Hz, QPD ≤ 10 pC Ratings 6500 6300 5700 ± 20 750 1500 750 1500 10400 10200 5100 −50 ~ +150 −50 ~ +125 −55 ~ +125 10 VCC = 4500V, VCE ≤ VCES, VGE =15V, Tj =125°C Unit V V A A A A W V V °C °C °C s ELECTRICAL CHARACTERISTICS Symbol Item Conditions Tj = 25°C Tj = 125°C ICES Collector cutoff current VCE = VCES, VGE = 0V VGE(th) IGES Cies Coes Cres QG Gate-emitter threshold voltage Gate leakage current Input capacitance Output capacitance Reverse transfer capacitance Total gate charge VCE = 10 V, IC = 120 mA, Tj = 25°C VGE = VGES, VCE = 0V, Tj = 25°C VCEsat Collector-emitter saturation voltage td(on) Turn-on delay time tr Turn-on rise time Eon(10%) Turn-on switching energy (Note 5) Eon Turn-on switching energy (Note 6) td(off) Turn-off delay time tf Turn-off fall time Eoff(10%) Turn-off switching energy (Note 5) Eoff Turn-off switching energy (Note 6) January 2013 (HVM-1058-C) VCE = 10 V, VGE = 0 V, f = 100 kHz Tj = 25°C VCC = 2800V, IC = 1200A, VGE = ±15V IC = 1200 A (Note 4) VGE = 15 V VCC = 3600 V IC = 750 A VGE = ±15 V RG(on) = 3.3 Ω Ls = 150 nH Inductive load VCC = 3600 V IC = 750 A VGE = ±15 V RG(off) = 33 Ω Ls = 150 nH Inductive load 2 Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Min — — 5.8 −0.5 — — — — — — — — — — — — — — — — — — — — — — Limits Typ — 24.0 6.3 — 136.0 8.6 4.0 10.5 3.80 4.80 1.05 1.00 0.18 0.20 3.35 4.10 3.50 4.40 7.60 8.00 0.40 0.45 3.10 4.60 3.40 4.90 Max 24.0 — 6.8 0.5 — — — — — 5.60 — 1.80 — 0.50 — — — — — 9.20 — 1.00 — — — — Unit mA V µA nF nF nF µC V µs µs J J µs µs J J < HVIGBT MODULES > CM750HG-130R HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules ELECTRICAL CHARACTERISTICS (continuation) Symbol Item Conditions (Note 2) VEC Emitter-collector voltage trr Reverse recovery time (Note 2) Irr Reverse recovery current (Note 2) Qrr Reverse recovery charge (Note 2) Reverse recovery energy (Note 2) Erec(10%) Erec (Note 5) Reverse recovery energy IE = 750 A VGE = 0 V (Note 4) Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C VCC = 3600 V IC = 750 A VGE = ±15 V RG(on) = 3.3 Ω Ls = 150 nH Inductive load (Note 2) (Note 6) Min — — — — — — — — — — — — Limits Typ 3.30 3.40 0.65 0.70 800 900 630 900 0.90 1.70 1.00 1.80 Max — 4.20 — — — — — — — — — — Min — — — Limits Typ — — 6.0 Max 12.0 22.0 — Min 7.0 3.0 1.0 — 600 26.0 56.0 — — — Limits Typ — — — 1.4 — — — 15.0 0.18 2.6 Max 22.0 6.0 3.0 — — — — — — — Unit V µs A µC J J THERMAL CHARACTERISTICS Symbol Rth(j-c)Q Rth(j-c)D Rth(c-s) Item Thermal resistance Contact thermal resistance Conditions Junction to Case, IGBT part Junction to Case, FWDi part Case to heat sink, grease = 1W/m·k, D(c-s) = 100m Unit K/kW K/kW K/kW MECHANICAL CHARACTERISTICS Symbol Mt Ms Mt m CTI da ds LP CE RCC’+EE’ rg Item Mounting torque Mass Comparative tracking index Clearance Creepage distance Parasitic stray inductance Internal lead resistance Internal gate resistance Conditions M8 : Main terminals screw M6 : Mounting screw M4 : Auxiliary terminals screw TC = 25°C TC = 25°C Note1. Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed Tjopmax rating. 2. The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi). 3. Junction temperature (Tj) should not exceed Tjmax rating (150°C). 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. 5. Eon(10%) / Eoff(10%) / Erec(10%) are the integral of 0.1VCE x 0.1IC x dt. 6. Definition of all items is according to IEC 60747, unless otherwise specified. January 2013 (HVM-1058-C) 3 Unit N·m N·m N·m kg — mm mm nH mΩ Ω < HVIGBT MODULES > CM750HG-130R HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) 1500 1500 T j = 12 5°C VCE = VGE VGE = 1 5V 1250 1250 VGE = 11V 1000 750 VGE = 10V 500 Coll ector Current [A] Coll ector Current [A] VGE = 1 3V 1000 750 500 T j = 12 5°C 250 Tj = 25 °C 250 0 0 0 2 4 6 8 0 Collector - Emitter Voltage [V] 4 8 12 16 Gate - Emi tter Voltage [V] FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 1500 1500 VGE = 15 V T j = 25 °C 1250 T j = 25°C 1000 T j = 125 °C 750 500 Emi tter Current [A] Coll ector Current [A] 1250 250 1000 T j = 12 5°C 750 500 250 0 0 0 2 4 6 8 0 Collector-Emitter Saturation Voltage [V] January 2013 (HVM-1058-C) 1 2 3 4 Emitter-Collector Voltage [V] 4 5 < HVIGBT MODULES > CM750HG-130R HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules PERFORMANCE CURVES CAPACITANCE CHARACTERISTICS (TYPICAL) GATE CHARGE CHARACTERISTICS (TYPICAL) 1000 20 VCE = 36 00V, IC = 7 50A Tj = 25 °C 15 Gate-Emitter Voltage [V] Capa citance [nF] Ci es 100 10 Co es Cres VGE = 0V, Tj = 25 °C f = 10 0kHz 10 5 0 -5 -10 1 -15 0.1 1 10 100 0 2 Collector-Emitter Voltage [V] 6 8 10 12 Gate Charge [µC] HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) 12 14 VCC = 360 0V, VGE = ±1 5V RG( on) = 3.9 Ω, R G(off ) = 33Ω LS = 15 0nH , T j = 1 25°C Indu cti ve lo ad VCC = 36 00 V, I C = 7 50A VG E = ±1 5V, L S = 1 50n H Tj = 12 5°C, Ind uctive l oad 10 Eon 10 8 Eoff 6 4 Switching Energies [J] 12 Switching Energies [J] 4 8 6 Eon 4 Er ec 2 2 Erec 0 0 0 250 500 750 1000 1250 0 1500 4 6 Gate resistor [Ohm] Collector Current [A] January 2013 (HVM-1058-C) 2 5 8 10 < HVIGBT MODULES > CM750HG-130R HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules PERFORMANCE CURVES SWITCHING ENERGY CHARACTERISTICS (TYPICAL) HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL)HALF-BRIDGE 12 10 VCC = 36 00 V, VGE = ± 15V R G(on) = 3.9Ω, RG( off) = 3 3Ω L S = 1 50n H, T j = 12 5°C In ductive l oa d 10 8 Switching Times [µs] Switching Energies [J] 100 VCC = 36 00 V, I C = 7 50A VG E = ±1 5V, L S = 1 50n H Tj = 12 5°C, Ind uctive l oad 6 Eoff 4 t d( off) td( on) 1 tf 0.1 2 tr 0 0 10 20 30 40 0.01 50 100 Gate resistor [Ohm] REVERSE BIAS SAFE OPERATING AREA (RBSOA) 10000 2500 VCC 45 00 V, VGE = ± 15V Tj = 1 25°C, R G(off ) = 33Ω 1000 tr r 0.1 100 Coll ector Current [A] Ir r 10 2000 Reverse Recovery Current [A] Reverse Recovery Time [µs] VCC = 36 00 V, VGE = ± 15V RG(on) = 3.9Ω, LS = 150 nH Tj = 12 5°C , Ind uctive l oad 1 1000 1000 0 10000 0 Emitter Current [A] January 2013 (HVM-1058-C) 1500 500 10 100 10000 Collector Current [A] FREE-WHEEL DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 100 1000 2000 4000 6000 Collector-Emitter Voltage [V] 6 8000 < HVIGBT MODULES > CM750HG-130R HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules PERFORMANCE CURVES SHORT CIRCUIT SAFE OPERATING AREA (SCSOA) FREE-WHEEL DIODE REVERSE RECOVERY SAFE OPERATING AREA (RRSOA) 10 2500 VCC 45 00V, VGE = ±1 5V T j = 1 25°C, R G(on) = 3.9Ω, RG( off) = 3 3Ω VCC 45 00 V, di/d t < 4 .5 kA/µs Tj = 1 25°C 2000 Reverse Recovery Current [A] Coll ector Current [kA] 8 6 4 2 1500 1000 500 0 0 0 2000 4000 6000 8000 0 Collector-Emitter Voltage [V] 2000 4000 6000 8000 Emitter-Collector Voltage [V] TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS Normalized Transient Thermal impedance 1.2 R th(j-c )Q = 12 .0 K/kW R th(j-c )R = 22.0K/kW 1 Z (t ) th( j c ) n R 1 exp i 1 0.8 0.6 1 3 0.4680 4 0.2905 ti [sec] : 0.0001 0.0131 0.0878 0.6247 10 Time [s] January 2013 (HVM-1058-C) 2 0.2360 0 0.1 1 0.0055 0.2 0.01 t i Ri [K/kW] : 0.4 0.001 i 7 < HVIGBT MODULES > CM750HG-130R HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Keep safety first in your circuit designs! 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