H11D1M, H11D2M, H11D3M, 4N38M, MOC8204M High Voltage Phototransistor Optocouplers tm Features General Description ■ High voltage: The H11DXM, 4N38M and MOC8204M are phototransistor-type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package. – MOC8204M, BVCER = 400V – H11D1M, H11D2M, BVCER = 300V – H11D3M, BVCER = 200V ■ High isolation voltage: – 7500 VAC peak, 1 second ■ Underwriters Laboratory (UL) recognized File # E90700, Volume 2 Applications ■ Power supply regulators ■ Digital logic inputs ■ Microprocessor inputs ■ Appliance sensor systems ■ Industrial controls Schematic ANODE 1 CATHODE 2 N/C 3 ©2000 Fairchild Semiconductor Corporation H11DXM, 4N38M, MOC8204M Rev. 1.0.2 6 BASE 5 COLLECTOR 4 EMITTER www.fairchildsemi.com H11D1M, H11D2M, H11D3M, 4N38M, MOC8204M High Voltage Phototransistor Optocouplers September 2007 Symbol Parameter Device Value Units TOTAL DEVICE TSTG Storage Temperature All -55 to +150 °C TOPR Operating Temperature All -40 to +100 °C Lead Solder Temperature (Wave Solder) All 260 for 10 sec °C Total Device Power Dissipation @ TA = 25°C All 260 mW 3.5 mW/°C TSOL PD Derate Above 25°C EMITTER IF Forward DC Current(1) All 80 mA VR Reverse Input Voltage(1) All 6.0 V Forward Current – Peak (1µs pulse, 300pps)(1) All 3.0 A LED Power Dissipation @ TA = 25°C(1) All IF(pk) PD Derate Above 25°C 150 mW 1.41 mW/°C DETECTOR PD Power Dissipation @ TA = 25°C All 300 mW 4.0 mW/°C MOC8204M 400 V H11D1M, H11D2M 300 H11D3M 200 4N38M 80 MOC8204M 400 H11D1M, H11D2M 300 H11D3M 200 4N38M 80 H11D1M, H11D2M, H11D3M, MOC8204M 7 V All 100 mA Derate linearly above 25°C VCER VCBO VECO IC Collector to Emitter Voltage(1) Collector Base Voltage(1) Emitter to Collector Voltage(1) Collector Current (Continuous) V Note: 1. Parameters meet or exceed JEDEC registered data (for 4N38M only). ©2000 Fairchild Semiconductor Corporation H11DXM, 4N38M, MOC8204M Rev. 1.0.2 www.fairchildsemi.com 2 H11D1M, H11D2M, H11D3M, 4N38M, MOC8204M High Voltage Phototransistor Optocouplers Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Individual Component Characteristics Symbol Characteristic Test Conditions Device Min. Typ.* Max. Unit All 1.15 1.5 All -1.8 mV/°C 25 V 50 pF 65 pF EMITTER VF Forward Voltage(2) ∆VF ∆TA Forward Voltage Temp. Coefficient BVR Reverse Breakdown Voltage IR = 10µA All CJ Junction Capacitance VF = 0V, f = 1MHz All IF = 10mA 6 VF = 1V, f = 1MHz IR Reverse Leakage Current(2) VR = 6V All 0.05 10 V µA DETECTOR BVCER Breakdown Voltage Collector to Emitter(2) BVCEO BVCBO RBE = 1MΩ, IC = 1.0mA, IF = 0 MOC8204M 400 H11D1M/2M 300 H11D3M 200 No RBE, IC = 1.0mA Collector to Base(2) IC = 100µA, IF = 0 4N38M 80 MOC8204M 400 H11D1M/2M 300 H11D3M 200 4N38M 80 BVEBO Emitter to Base IE = 100µA, IF = 0 4N38M 7 BVECO Emitter to Collector IE = 100µA, IF = 0 All 7 Leakage Current Collector to Emitter(2) (RBE = 1MΩ) VCE = 300V, IF = 0, TA = 25°C ICER V V V 10 MOC8204M VCE = 300V, IF = 0, TA = 100°C VCE = 200V, IF = 0, TA = 25°C H11D1M/2M VCE = 200V, IF = 0, TA = 100°C VCE = 100V, IF = 0, TA = 25°C H11D3M VCE = 100V, IF = 0, TA = 100°C ICEO V 100 nA 250 µA 100 nA 250 µA 100 nA 250 µA 50 nA 4N38M No RBE, VCE = 60V, IF = 0, TA = 25°C Transfer Characteristics (TA = 25°C Unless otherwise specified.) Symbol Characteristics Test Conditions Device Min. H11D1M/2M/3M, MOC8204M 2 (20) 2 (20) Typ.* Max. Units EMITTER CTR VCE(SAT) Current Transfer Ratio, Collector to Emitter IF = 10mA, VCE = 10V, RBE = 1MΩ IF = 10mA, VCE = 10V 4N38M Saturation Voltage(2) IF = 10mA, IC = 0.5mA, RBE = 1MΩ H11D1M/2M/3M, MOC8204M IF = 20mA, IC = 4mA mA (%) 0.1 4N38M 0.40 V 1.0 SWITCHING TIMES tON Non-Saturated Turn-on Time tOFF Turn-off Time VCE = 10V, ICE = 2mA, RL = 100Ω All 5 µs All 5 µs *All Typical values at TA = 25°C Note: 2. Parameters meet or exceed JEDEC registered data (for 4N38M only). ©2000 Fairchild Semiconductor Corporation H11DXM, 4N38M, MOC8204M Rev. 1.0.2 www.fairchildsemi.com 3 H11D1M, H11D2M, H11D3M, 4N38M, MOC8204M High Voltage Phototransistor Optocouplers Electrical Characteristics (TA = 25°C unless otherwise specified.) Isolation Characteristics Symbol VISO Characteristic Isolation Voltage Test Conditions f = 60Hz, t = 1 sec. Device Min. All 7500 11 RISO Isolation Resistance VI-O = 500 VDC All CISO Isolation Capacitance f = 1MHz All 10 Typ.* Max. Units VACPEAK Ω 0.2 pF *All Typical values at TA = 25°C ©2000 Fairchild Semiconductor Corporation H11DXM, 4N38M, MOC8204M Rev. 1.0.2 www.fairchildsemi.com 4 H11D1M, H11D2M, H11D3M, 4N38M, MOC8204M High Voltage Phototransistor Optocouplers DC Electrical Characteristics (TA = 25°C unless otherwise specified.) (Continued) NORMALIZED ICER - OUTPUT CURRENT 1.8 VF - FORWARD VOLTAGE (V) 1.7 1.6 1.5 1.4 TA = 55˚C 1.3 TA = 25˚C 1.2 1.1 TA = 100˚C Normalized to: VCE = 10 V IF = 10 mA RBE = 106 Ω TA = 25˚C 10 IF = 50 mA IF = 10 mA 1 IF = 5 mA 0.1 0.01 1.0 1 10 0.1 100 IF - LED FORWARDCURRENT (mA) 1 10 100 VCE - COLLECTOR VOLTAGE (V) Fig. 1 LED Forward Voltage vs. Forward Current Fig. 2 Normalized Output Characteristics NORMALIZED ICER - OUTPUT CURRENT NORMALIZED ICER - OUTPUT CURRENT 10 Normalized to: VCE = 10 V IF = 10 mA RBE = 106 Ω TA = 25˚C 1 0.1 0.01 IF = 20 mA IF = 10 mA 1 IF = 5 mA 0.1 -60 10 -40 -20 0 20 40 60 80 IF - LED INPUT CURRENT (mA) TA - AMBIENT TEMPERATURE (˚C) Fig. 3 Normalized Output Current vs. LED Input Current Fig. 4 Normalized Output Current vs. Temperature 10000 NORMALIZED ICBO - COLLECTOR-BASE CURRENT NORMALIZED ICER - DARK CURRENT 1 Normalized to: VCE = 10 V IF = 10 mA RBE = 106 Ω TA = 25˚C Normalized to: VCE = 100 V RBE = 106 Ω TA = 25˚C 1000 VCE = 300 V 100 VCE = 100 V VCE = 50 V 10 1 0.1 10 20 30 40 50 60 70 80 90 100 110 10 Normalized to: VCE = 10 V IF = 10 mA RBE = 106 Ω TA = 25˚C 9 8 IF = 50 mA 7 6 5 4 3 2 IF = 10 mA 1 0 -60 IF = 5 mA -40 -20 0 20 40 60 80 100 TA - AMBIENT TEMPERATURE (˚C) TA - AMBIENT TEMPERATURE (˚C) Fig. 5 Normalized Dark Current vs. Ambient Temperature ©2000 Fairchild Semiconductor Corporation H11DXM, 4N38M, MOC8204M Rev. 1.0.2 100 Fig. 6 Normalized Collector-Base Current vs. Temperature www.fairchildsemi.com 5 H11D1M, H11D2M, H11D3M, 4N38M, MOC8204M High Voltage Phototransistor Optocouplers Typical Performance Curves Through Hole Surface Mount 0.350 (8.89) 0.320 (8.13) 0.350 (8.89) 0.320 (8.13) 0.260 (6.60) 0.240 (6.10) 0.070 (1.77) 0.040 (1.02) 0.260 (6.60) 0.240 (6.10) 0.390 (9.90) 0.332 (8.43) 0.070 (1.77) 0.040 (1.02) 0.320 (8.13) 0.320 (8.13) 0.014 (0.36) 0.010 (0.25) 0.014 (0.36) 0.010 (0.25) 0.200 (5.08) 0.115 (2.93) 0.200 (5.08) 0.115 (2.93) 0.100 (2.54) 0.015 (0.38) 0.012 (0.30) 0.008 (0.20) 0.025 (0.63) 0.020 (0.51) 0.020 (0.50) 0.016 (0.41) 0.100 (2.54) 0.100 [2.54] 15° 0.4" Lead Spacing 0.035 (0.88) 0.006 (0.16) 0.020 (0.50) 0.016 (0.41) 0.012 (0.30) Recommended Pad Layout for Surface Mount Leadform 0.350 (8.89) 0.320 (8.13) 0.070 (1.78) 0.060 (1.52) 0.260 (6.60) 0.240 (6.10) 0.425 (10.79) 0.070 (1.77) 0.040 (1.02) 0.100 (2.54) 0.305 (7.75) 0.014 (0.36) 0.010 (0.25) 0.030 (0.76) 0.200 (5.08) 0.115 (2.93) 0.100 (2.54) 0.015 (0.38) 0.020 (0.50) 0.016 (0.41) 0.012 (0.30) 0.008 (0.21) 0.100 [2.54] 0.425 (10.80) 0.400 (10.16) Note: All dimensions are in inches (millimeters). ©2000 Fairchild Semiconductor Corporation H11DXM, 4N38M, MOC8204M Rev. 1.0.2 www.fairchildsemi.com 6 H11D1M, H11D2M, H11D3M, 4N38M, MOC8204M High Voltage Phototransistor Optocouplers Package Dimensions Option Order Entry Identifier (Example) No option H11D1M S H11D1SM SR2 H11D1SR2M T H11D1TM 0.4" Lead Spacing V H11D1VM VDE 0884 TV H11D1TVM VDE 0884, 0.4" Lead Spacing SV H11D1SVM VDE 0884, Surface Mount SR2V H11D1SR2VM Description Standard Through Hole Device Surface Mount Lead Bend Surface Mount; Tape and Reel VDE 0884, Surface Mount, Tape and Reel Marking Information 1 V 3 H11D1 2 X YY Q 6 4 5 Definitions ©2000 Fairchild Semiconductor Corporation H11DXM, 4N38M, MOC8204M Rev. 1.0.2 1 Fairchild logo 2 Device number 3 VDE mark (Note: Only appears on parts ordered with VDE option – See order entry table) 4 One digit year code, e.g., ‘7’ 5 Two digit work week ranging from ‘01’ to ‘53’ 6 Assembly package code www.fairchildsemi.com 7 H11D1M, H11D2M, H11D3M, 4N38M, MOC8204M High Voltage Phototransistor Optocouplers Ordering Information 12.0 ± 0.1 4.5 ± 0.20 2.0 ± 0.05 Ø1.5 MIN 4.0 ± 0.1 0.30 ± 0.05 1.75 ± 0.10 11.5 ± 1.0 21.0 ± 0.1 9.1 ± 0.20 Ø1.5 ± 0.1/-0 10.1 ± 0.20 0.1 MAX 24.0 ± 0.3 User Direction of Feed Reflow Profile 300 280 260 240 220 200 180 160 °C 140 120 100 80 60 40 20 0 260°C >245°C = 42 Sec Time above 183°C = 90 Sec 1.822°C/Sec Ramp up rate 33 Sec 0 60 120 180 270 360 Time (s) ©2000 Fairchild Semiconductor Corporation H11DXM, 4N38M, MOC8204M Rev. 1.0.2 www.fairchildsemi.com 8 H11D1M, H11D2M, H11D3M, 4N38M, MOC8204M High Voltage Phototransistor Optocouplers Carrier Tape Specifications ACEx® Build it Now™ CorePLUS™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® ® Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FPS™ FRFET® Global Power ResourceSM Power247® POWEREDGE® Power-SPM™ PowerTrench® Programmable Active Droop™ QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 Green FPS™ Green FPS™ e-Series™ GTO™ i-Lo™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR® ® PDP-SPM™ Power220® SuperSOT™-8 SyncFET™ The Power Franchise® TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ µSerDes™ UHC® UniFET™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Definition Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only. Rev. I31 ©2000 Fairchild Semiconductor Corporation H11DXM, 4N38M, MOC8204M Rev. 1.0.2 www.fairchildsemi.com 9 H11D1M, H11D2M, H11D3M, 4N38M, MOC8204M High Voltage Phototransistor Optocouplers TRADEMARKS The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.